16MB EEPROM Search Results

Contextual Info: SU532043574F6BP May 11, 2005 Ordering Information Part Numbers Description SM532043574F6BP 4Mx32 16MB , SDRAM, 100-pin DIMM, Unbuffered, Non-ECC, 4Mx16 Based, PC100, CL 2.0 & 3.0, 25.40mm. SG532043574F6BP 4Mx32 (16MB), SDRAM, 100-pin DIMM, Unbuffered, Non-ECC, 4Mx16 Based, PC100,

EEPROM 16MB

Abstract: 100-pin dimm 1 Meg x32 DIMM 100-pin DIMM 100-pin 100-PIN DQ1572 16Mb SDRAM MICRON MICRON POWER RESISTOR 2W
Contextual Info: 16MB, 32MB, 64MB, 128MB x32 100-PIN SDRAM DIMM SYNCHRONOUS DRAM MODULE MT2LSDT432U – 16MB, MT4LSDT832UD – 32MB, MT4LSDT1632UD – 64MB, MT4LSDT3232UD – 128MB For the latest data sheet, please refer to the Micronâ Web site: www.micron.com/moduleds

MT48LC8M16A2P

Contextual Info: 16MB x32, SR ; 32MB, 64MB, 128MB (x32, DR) 100-PIN SDRAM UDIMM SYNCHRONOUS DRAM MODULE MT2LSDT432U – 16MB MT4LSDT832UD – 32MB MT4LSDT1632UD – 64MB MT4LSDT3232UD – 128MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/modules

DS1270W

Contextual Info: Rev 0; 8/06 3.3V Single-Piece 16Mb Nonvolatile SRAM Features The DS2070W is a 16Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in

MT48LC8M16A2P

Abstract: 100-PIN 3CK10
Contextual Info: 16MB x32, SR ; 32MB, 64MB, 128MB (x32, DR) 100-PIN SDRAM UDIMM SYNCHRONOUS DRAM MODULE MT2LSDT432U – 16MB MT4LSDT832UD – 32MB MT4LSDT1632UD – 64MB MT4LSDT3232UD – 128MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/modules

DS1270W

Abstract: DS2070W-100 DS2070W
Contextual Info: Rev 0; 8/06 3.3V Single-Piece 16Mb Nonvolatile SRAM Features The DS2070W is a 16Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in

39vf3201

Abstract: 39vf1602 39vf1601 sst39vf1602 SST39VF160X S71223-05-000 SST39VF1601 SST39VF1601-70-4C-B3KE sst39vf1601-70-4c-eke SST39VF1602-70-4C-EKE
Contextual Info: 16 Mbit / 32 Mbit / x16 Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 1M x16: SST39VF1601/1602 2M x16: SST39VF3201/3202

39vf1601c

Abstract: 1602c 555H SST39VF1602C
Contextual Info: 16 Mbit x16 Multi-Purpose Flash Plus SST39VF1601C / SST39VF1602C SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories Preliminary Specification FEATURES: • Organized as 1M x16: SST39VF1601C/1602C • Single Voltage Read and Write Operations

39vf3201

Abstract: 39vf1601 39vf1601 70-4c-eke 39VF3202 39vf1602 39vf160 39VF6401 xx029 S71223-04-000 SST39VF1601
Contextual Info: 16 Mbit / 32 Mbit / 64 Mbit x16 Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 / SST39VF6401 SST39VF1602 / SST39VF3202 / SST39VF6402 SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 1M x16: SST39VF1601/1602

multipurpose

Abstract: FE000H-FFFFFH sst39vf1602c
Contextual Info: 16 Mbit x16 Multi-Purpose Flash Plus SST39VF1601C / SST39VF1602C SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories Preliminary Specification FEATURES: • Organized as 1M x16: SST39VF1601C/1602C • Single Voltage Read and Write Operations

39vf3201

Abstract: 39vf1601 39vf1602 39vf1601 70-4c-eke 39VF3202 sst39vf1602 SST39VF160X 39vf6401 SST39VF1601 SST39VF6401-70-4C-B1KE
Contextual Info: 16 Mbit / 32 Mbit / 64 Mbit x16 Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 / SST39VF6401 SST39VF1602 / SST39VF3202 / SST39VF6402 SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories Preliminary Specifications FEATURES: • Organized as 1M x16: SST39VF1601/1602

Contextual Info: 16Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W160ET, M29W160EB Features • Common Flash interface – 64-bit security code • Low power consumption: Standby and automatic mode • 100,000 PROGRAM/ERASE cycles per block

F24-12

Contextual Info: 16 Mbit Concurrent SuperFlash SST36VF1601 SST36VF16012.7V 16Mb x16 Concurrent SuperFlash Data Sheet FEATURES: • Organized as 1M x16 • Dual Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection - SST36VF1601: 12 Mbit + 4 Mbit

39VF1601C

Abstract: 39VF1602C 1602c 39vf160 SST39VF1601C-70-4C-EKE 39vf1601 sst39vf1602c 555H SST39VF1602C-70-4C-EKE sst39vf1601C
Contextual Info: 16 Mbit x16 Multi-Purpose Flash Plus SST39VF1601C / SST39VF1602C SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 1M x16: SST39VF1601C/1602C • Single Voltage Read and Write Operations – 2.7-3.6V

SST39WF160x

Abstract: SST39WF1601-90-4C-B3K SST39WF1601-90-4I-B3KE SST39WF1601 SST39WF1602
Contextual Info: 16 Mbit x16 Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 SST39WF160x2.7V 16Mb (x16) MPF+ memories Preliminary Specifications FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (Typical)

a103 636 transistor

Abstract: BF274 SST39WF1601-90-4C-MBQE SST39WF1601 SST39WF1602
Contextual Info: 16 Mbit x16 Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 SST39WF160x2.7V 16Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (Typical)

SST39WF1601

Abstract: SST39WF1602
Contextual Info: 16 Mbit x16 Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 SST39WF160x2.7V 16Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (Typical)

T1129

Abstract: 1j63
Contextual Info: MSC23S4721E-8BS18 98.07.17 Semiconductor MSC23S4721E-8BS18 4,194,304 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):_ DESCRIPTION The Oki MSC23S4721E-8BS18 is a fully decoded, 4,194,304 x 72bit synchronous dynamic random access memory composed of eighteen 16Mb DRAMs (2Mx8) in TSOP

P106H

Abstract: SST39VF1681 SST39VF1682 SST39VF168x
Contextual Info: 16 Mbit x8 Multi-Purpose Flash Plus SST39VF1681 / SST39VF1682 SST39VF1681 / 16822.7V 16Mb (x8) MPF+ memories Preliminary Specifications FEATURES: • Organized as 2M x8 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (Typical)

39vf1601c

Abstract: 39vf1602 39vf1601 jedec package MO-220 SST39VF1601C-70-4C-EKE sst39vf1602c 555H 39VF1602C
Contextual Info: 16 Mbit x16 Multi-Purpose Flash Plus SST39VF1601C / SST39VF1602C SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 1M x16: SST39VF1601C/1602C • Single Voltage Read and Write Operations – 2.7-3.6V

Contextual Info: 16 Mbit Concurrent SuperFlash SST36VF1601 SST36VF16012.7V 16Mb x16 Concurrent SuperFlash Data Sheet FEATURES: • Organized as 1M x16 • Dual Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection - SST36VF1601: 12 Mbit + 4 Mbit

SST39WF1601

Abstract: SST39WF1602
Contextual Info: 16 Mbit x16 Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 SST39WF160x2.7V 16Mb (x16) MPF+ memories EOL Data Sheet FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (Typical)

BF274

Contextual Info: 16 Mbit x16 Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 SST39WF160x2.7V 16Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (Typical)

MSC23S4641E-8BS16

Contextual Info: MSC23S4641E-8BS16 98.06.22 Semiconductor MSC23S4641E-8BS16 4,194,304 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK): DESCRIPTION The Oki MSC23S4641E-8BS16 is a fully decoded, 4,194,304 x 64bit synchronous dynamic random access memory composed of sixteen 16Mb DRAMs(2Mx8) in TSOP