16M NTRAM SAMSUNG Search Results

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

K5W1G

Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION

K9F2G08U0C

Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
Contextual Info: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM

K9F2G08U0B

Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM

K9HDG08U1A

Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
Contextual Info: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH

16M NtRAM samsung

Abstract: 9p marking
Contextual Info: K7N643645M K7N641845M Preliminary 2Mx36 & 4Mx18 Pipelined NtRAMTM Document Title 2Mx36 & 4Mx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. Sep. 30. 2002 Advance 0.1 1. Delete the speed bins FT : 7.5ns, 8.5ns / PP : 200MHz

Contextual Info: Preliminary GS8160Z18/36T-250/225/200/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp 16Mb Pipelined and Flow Through Synchronous NBT SRAM 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features Functional Description • NBT No Bus Turn Around functionality allows zero wait

Contextual Info: Preliminary GS880Z18/36T-166/150/133/100 100 Pin TQFP Commercial Temp Industrial Temp 166-100 Mhz 8Mb Pipelined and Flow Through 3.3V VDD 2.5V & 3.3V VDDQ Synchronous NBT SRAMs Features Functional Description • 512kx18 and 256kx36 Configurations. • User configurable Pipelined and Flow through mode.

GS840Z18AT

Contextual Info: Preliminary GS840Z18/36AT-180/166/150/100 100-Pin TQFP Commercial Temp Industrial Temp MHz 4Mb Pipelined and Flow Through 180 MHz–100 3.3 V VDD Synchronous NBT SRAMs 2.5 V and 3.3 V VDDQ Features Functional Description • 256K x 18 and 128K x 36 configurations

GS840Z36AT-100

Abstract: GS840Z18AT
Contextual Info: Preliminary GS840Z18/36AT-200/180/166/150/100 100-Pin TQFP Commercial Temp Industrial Temp MHz 4Mb Pipelined and Flow Through 200 MHz–100 3.3 V VDD Synchronous NBT SRAMs 2.5 V and 3.3 V VDDQ Features Functional Description • 256K x 18 and 128K x 36 configurations

GS8160Z18T

Abstract: GS8160Z18T-225 GS8160Z36T
Contextual Info: Preliminary GS8160Z18/36T-225/200/180/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp MHz 16Mb Pipelined and Flow through 225 MHz–133 2.5 V VDD Synchronous NBT SRAM 2.5 V or 3.3 V I/O Features • User-configurable Pipeline and Flow Through mode

16M NtRAM samsung

Abstract: 36T22
Contextual Info: Preliminary GS8150Z18/36T-225/200/180/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp MHz 16Mb Pipelined and Flow Through 225 MHz–133 3.3 V VDD Synchronous NBT SRAM 2.5 V or 3.3 V I/O Features • User-configurable Pipeline and Flow Through mode

Contextual Info: Preliminary GS8160Z18/36T-225/200/180/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp MHz 16Mb Pipelined and Flow through 225 MHz–133 2.5 V VDD Synchronous NBT SRAM 2.5 V or 3.3 V I/O Features • User-configurable Pipeline and Flow Through mode

Contextual Info: Preliminary GS8161Z18/36T-200/180/166/150/133 100 Pin TQFP Commercial Temp Industrial Temp 16Mb Pipelined and Flow through Synchronous NBT SRAM Features • User configurable Pipelined and Flow through mode. • NBT No Bus Turn Around functionality allows zero wait ReadWrite-Read bus utilization. Fully pin compatible with both pipelined

qe-2000

Abstract: 328A15
Contextual Info: Preliminary GS8151Z18/36T-225/200/180/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp MHz 16Mb Pipelined and Flow Through 225 MHz–133 3.3 V VDD Synchronous NBT SRAM 2.5 V or 3.3 V I/O Features • User-configurable Pipeline and Flow Through mode

36T22

Abstract: GS8160Z18T GS8160Z18T-225 GS8160Z36T
Contextual Info: Preliminary GS8160Z18/36T-225/200/180/166/150/133 16Mb Pipelined and Flow Through Synchronous NBT SRAM 100-Pin TQFP Commercial Temp Industrial Temp 225 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features Functional Description • NBT No Bus Turn Around functionality allows zero wait

36AB-180

Abstract: GS842Z18AB-180I GS842Z18A GS842Z36A
Contextual Info: Preliminary GS842Z18/36AB-180/166/150/100 119-Bump BGA Commercial Temp Industrial Temp MHz 4Mb Pipelined and Flow Through 180 MHz–100 3.3 V VDD Synchronous NBT SRAMs 2.5 V and 3.3 V VDDQ Features Functional Description • 256K x 18 and 128K x 36 configurations

GS842Z18A

Abstract: GS842Z36A
Contextual Info: Preliminary GS842Z18/36AB-200/180/166/150/100 119-Bump BGA Commercial Temp Industrial Temp MHz 4Mb Pipelined and Flow Through 200 MHz–100 3.3 V VDD Synchronous NBT SRAMs 2.5 V and 3.3 V VDDQ Features Functional Description • 256K x 18 and 128K x 36 configurations

Contextual Info: Preliminary GS8161Z18/36T-250/225/200/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp 16Mb Pipelined and Flow Through Synchronous NBT SRAM 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features Functional Description • User-configurable Pipeline and Flow Through mode

th50vpf

Abstract: TH50VPF5783 TC55VEM208ASTN55 th58nvg TC554161AFT-70L TC554161AFT-70 TC55V8512JI-12 TC55VD1636FFI-150 tc58128aft TC58NVG0S3AFT00
Contextual Info: MOS Memories Dynamic RAMs Static RAMs NOR Flash Memories NAND E2PROM Media Card MCPs multi-chip packages z 2 z 3 z 10 z 11 z 12 z 13 1 Dynamic RAMs Fast Cycle RAM (FCRAMTM ) (DDR) Capacity 256 Mbits 288 Mbits Product No. — TC59LM806CFT-50 — TC59LM806CFT-55

Contextual Info: Preliminary GS8151Z18/36T-225/200/180/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp MHz 16Mb Pipelined and Flow Through 225 MHz–133 3.3 V VDD Synchronous NBT SRAM 2.5 V or 3.3 V I/O Features • User-configurable Pipeline and Flow Through mode

Contextual Info: Preliminary GS881Z18/36T-11/100/80/66 100-Pin TQFP Commercial Temp Industrial Temp MHz 8Mb Pipelined and Flow Through 100 MHz–66 3.3 V VDD Synchronous NBT SRAMs 2.5 V and 3.3 V VDDQ Features Functional Description • 512K x 18 and 256K x 36 configurations

GS882Z36b

Abstract: a1-66c
Contextual Info: Preliminary GS882Z18/36B-11/100/80/66 119-Bump BGA Commercial Temp Industrial Temp MHz 8Mb Pipelined and Flow Through 100 MHz–66 3.3 V VDD Synchronous NBT SRAMs 2.5 V and 3.3 V VDDQ Features Functional Description • 512K x 18 and 256K x 36 configurations