16F1A Search Results

Contextual Info: NON-ISOLATED DC/DC CONVERTERS 2.4 Vdc - 5.5 Vdc Input VRBC-16F1Ax 0.75 Vdc - 3.63 Vdc/16A Output Series RoHS Compliant Rev.B • Non-Isolated • Under-Voltage Lockout UVLO • High Efficiency • Over Temperature Protection • High Power Density • Remote Sense

Contextual Info: NON-ISOLATED DC/DC CONVERTERS 2.4 V - 5.5 V Input 0.75 V - 3.63 V/16A Output VRBC-16F1Ax Series RoHS Compliant • Non-Isolated • Under-Voltage Lockout UVLO • High Efficiency • Over Temperature Protection • High Power Density • Remote Sense •

Contextual Info: NON-ISOLATED DC/DC CONVERTERS 2.4 V-5.5 V Input 0.75 V-3.63 V/16 A Output SRBC-16F1Ax Series • RoHS Compliant Non-Isolated • Under-voltage Lockout UVLO • High Efficiency • Over Temperature Protection • High Power Density • OCP/SCP • Fixed Frequency (300 kHz)

SR-332

Abstract: SRBC-16F1A0 SRBC-16F1AL SRBC-16F1AW
Contextual Info: NON-ISOLATED DC/DC CONVERTERS 2.4 V - 5.5 V Input 0.75 V - 3.63 V/16 A Output SRBC-16F1Ax Series RoHS Compliant • Non-Isolated • Under-voltage Lockout UVLO • High Efficiency • Over Temperature Protection • High Power Density • OCP/SCP • Fixed Frequency (300 kHz)

2-16F1A

Contextual Info: 2-16F1A Uniti nn Nane JEDEC EIAJ Toshiba TD-3P N IS - Discrete Seniconductor Integrated Circuit 2-16F1A Jan.2003

Contextual Info: NON-ISOLATED DC/DC CONVERTERS 2.4 Vdc - 5.5 Vdc Input SRBC-16F1Ax • • • • • • • 0.75 Vdc - 3.63 Vdc/16 A Output RoHS Compliant Non-Isolated High Efficiency High Power Density Fixed Frequency 300 kHz Remote On/Off Remote Sense Wide Trim Range

47 uf capacitor

Abstract: SR-332 TPSC107K010R0075 VRBC-16F1A0 VRBC-16F1AL VRBC-16F1AW
Contextual Info: NON-ISOLATED DC/DC CONVERTERS 2.4 V - 5.5 V Input 0.75 V - 3.63 V/16A Output VRBC-16F1Ax Series RoHS Compliant • Non-Isolated • Under-voltage Lockout UVLO • High Efficiency • Over Temperature Protection • High Power Density • Remote Sense •

Contextual Info: NON-ISOLATED DC/DC CONVERTERS 2.4 Vdc - 5.5 Vdc Input VRBC-16F1Ax 0.75 Vdc - 3.63 Vdc/16A Output Series RoHS Compliant Rev.A • Non-Isolated • Under-Voltage Lockout UVLO • High Efficiency • Over Temperature Protection • High Power Density • Remote Sense

Contextual Info: NON-ISOLATED DC/DC CONVERTERS 2.4 Vdc - 5.5 Vdc Input SRBC-16F1Ax • • • • • • 0.75 Vdc - 3.63 Vdc/16 A Output RoHS Compliant • • • • • • • Non-Isolated High Efficiency High Power Density Fixed Frequency 300 kHz Remote On/Off Converter Can Sink and Source

Contextual Info: 2-16F1A U nit m Jan,2003

TRANSISTOR 545

Contextual Info: Transistor Outline Package New Isolated Type TO–3P (N) IS パッケージ 外形図 パッケージ形状および寸法 単位 : mm 3.5 15.8 ±0.5 3.6 max 2.0 1.0 +0.25 –0.15 5.45 ±0.2 21.0 ±0.5 19.4 min (15.5) 5.5 φ3.6 ±0.2 0.6 +0.25 –0.15

toshiba Ta

Abstract: GT15M321
Contextual Info: GT15M321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15M321 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth-generation IGBT FRD included between emitter and collector Enhancement mode type High speed : tf = 0.20 µs TYP. (IC = 15 A)

GT15M321

Contextual Info: GT15M321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15M321 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 4th Generation FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.20 µs TYP. (IC = 15 A) Low Saturation Voltage

GT15M321

Contextual Info: GT15M321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15M321 Unit: mm HIGH POWER SWITCHING APPLICATIONS l The 4th Generation l FRD Included Between Emitter and Collector l Enhancement−Mode l High Speed : tf = 0.20 µs TYP. (IC = 15 A)

TOSHIBA IGBT DATA BOOK

Abstract: GT30J322
Contextual Info: GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT30J322 Unit: mm THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.25µs Typ. (IC = 50A)

3p transistor

Abstract: TO-3P Jedec package outline
Contextual Info: Transistor Outline Package New Isolated Type TO–3P (N) IS Package Outline Dimensions Outline Dimensions Unit: mm 3.5 15.8 ±0.5 3.6 max 2.0 1.0 +0.25 –0.15 5.45 ±0.2 21.0 ±0.5 19.4 min (15.5) 5.5 φ3.6 ±0.2 0.6 +0.25 –0.15 2 3 5.0 ±0.3 1 3.15 +0.2

GT30J322

Abstract: IGBT Guide TOSHIBA IGBT DATA BOOK
Contextual Info: GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 Unit: mm FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25µs Typ. (IC = 50A)

GT30J322

Abstract: IGBT Guide
Contextual Info: GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 Unit: mm THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.25µs Typ. (IC = 50A)