16DEG Search Results

SIR-341ST3F

Contextual Info: Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it

86210 but 70

Abstract: ids 2560 KGF1921 55076 151169
Contextual Info: ODRKGF1921-04 Electronic Components KGF1921 Issue Date:Jan 20, 2004 Preliminary RF Driver HEMT GENERAL DESCRIPTION The KGF1921, housed in a SOT-89 type plastic-mold package, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1921 specifications are guaranteed to a fixed

toy IR remote control circuit diagram

Abstract: SIR-341ST3F 940NM data sheet
Contextual Info: SIR-341ST3F Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide

KGF1155B

Abstract: KGF1155
Contextual Info: J2Q0012-38-71 作成：1998年 7月 KGF1155B/1155 l 前回作成：1998年 1月 ¡ 電子部品 KGF1155B/1155 小信号アンプ n 概要 KGF1155Bは低雑音、低電流動作を特長とするUHF帯用の小信号アンプです。 外部インピーダンス整合回路は必要ですが、特性は全て5V、850MHz用の固定整合回路（アンプ動

9938 GM

Abstract: 9938 G KGF1175 KGF1175B E 13007 0 t4 3578
Contextual Info: J2Q0015-38-71 作成：1998年 7月 KGF1175B/1175 l 前回作成：1998年 1月 ¡ 電子部品 KGF1175B/1175 小信号アンプ n 概要 KGF1175Bは低雑音、低電流動作を特長とするUHF帯からL帯用の小信号アンプです。 外部インピーダンス整合回路は必要ですが、特性は全て5V、850MHz用の固定整合回路で保証され

Z050

Abstract: RF Driver HEMT 86210 but 70 ids 2560
Contextual Info: ODRKGF1921-05 Electronic Components KGF1921 Issue Date:Jan 20, 2005 Preliminary RF Driver HEMT GENERAL DESCRIPTION The KGF1921, housed in a SOT-89 type plastic-mold package, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1921 specifications are guaranteed to a fixed

Contextual Info: 4 DRAWING MA D E THIS IN THIRD DRAWING C ANGLE IS UNPUBLISHED. COPYRIGHT 3 PROJECTION 19 RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL 2 <3> INTERNATIONAL RIGHTS DI ST L OC ,19 AF RESERVED. REV I 5 I 0 N5 50 P F LTR Z O NE DESCRIPTION B D WI R E FUNNEL

SIR-341ST3F

Abstract: a940
Contextual Info: Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940 mm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation

Contextual Info: Freescale Semiconductor Document Number: AN4399 Rev. 1, 01/2013 Application Note High Precision Calibration of a Three-Axis Accelerometer by Mark Pedley 1 Introduction Contents 1 Three-axis accelerometers supplied for the consumer market are typically calibrated by the sensor

Contextual Info: Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it

Contextual Info: O K I electronic components KGF1156_ Small-Signal Amplifier for UHF-Band and P C S Frequencies GENERAL DESCRIPTION The KG F1156 is a small-signal U H F-band amplifier that features high output pow er, high gain, low noise, and low current dissipation. The KG F1156 specifications are guaranteed by the fixed

Contextual Info: Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it

450 khz filter

Abstract: AN6227FHN gmx matsua
Contextual Info: ICs for Mobile Communication AN6227FHN Single chip, transmission and reception IC for PDC 5.20±0.10 5.00 The AN6227FHN is a transmission and reception IC incorporating reception sleep function for a 1.5 GHz cellular telephone. 19 M Di ain sc te on na tin nc

C214P

Abstract: KGF1191 CB 0925 C107P cc 3061
Contextual Info: J2Q0016-38-71 作成：1998年 7月 ¡ 電子部品 KGF1191 l 前回作成：1998年 1月 KGF1191 小信号アンプ n 概要 KGF1191は低電圧、低電流動作、高利得、高アイソレーションを特長とするUHF帯からL帯用の 小信号2段アンプです。

Contextual Info: SIR-341ST3F Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it

TEMIC K153P

Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2

128 QFP 14x20

Abstract: 26625 3802 COM16 RTS8505C
Contextual Info: RTS8505C Data Sheet Features .1 Block Diagram .1

Contextual Info: Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it

SIR-341ST3F

Contextual Info: SIR-341ST3F Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide