16N50 Search Results
16N50 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 16_N-50-3-27/133_NE |
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16_N-50-3-27/133_NE | Original | 774.77KB | |||
| 16_N-50-7-77/133_NE |
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16_N-50-7-77/133_NE | Original | 814.09KB |
16N50 Price and Stock
TTM Technologies BD1416N50100AHFBALUN 1.4GHZ-1.6GHZ 50/100 0404 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BD1416N50100AHF | Digi-Reel | 43,798 | 1 |
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BD1416N50100AHF | 4,000 | 4,000 |
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BD1416N50100AHF | 16 Weeks | 4,000 |
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IXYS Corporation IXFH16N50PMOSFET N-CH 500V 16A TO247AD |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXFH16N50P | Tube | 631 | 1 |
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IXFH16N50P | Tube | 300 |
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IXFH16N50P | 1 |
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IXFH16N50P | 1,680 | 30 |
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onsemi FDA16N50-F109MOSFET N-CH 500V 16.5A TO3PN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDA16N50-F109 | Tube | 621 | 1 |
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FDA16N50-F109 | 450 |
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FDA16N50-F109 | 8 Weeks | 450 |
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FDA16N50-F109 | 158 |
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IXYS Corporation IXTH16N50D2MOSFET N-CH 500V 16A TO247-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTH16N50D2 | Tube | 218 | 1 |
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IXTH16N50D2 | Tube | 300 | 30 |
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IXTH16N50D2 | 1 |
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IXTH16N50D2 | 300 |
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Infineon Technologies AG SPW16N50C3FKSA1MOSFET N-CH 560V 16A TO247-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SPW16N50C3FKSA1 | Tube | 86 | 1 |
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SPW16N50C3FKSA1 | Tube | 15 Weeks | 480 |
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SPW16N50C3FKSA1 | Bulk | 232 | 1 |
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SPW16N50C3FKSA1 | 455 | 1 |
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SPW16N50C3FKSA1 | Tube | 240 | 0 Weeks, 1 Days | 1 |
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SPW16N50C3FKSA1 | 16 Weeks | 240 |
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16N50 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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16N50Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 16N50 Preliminary Power MOSFET 16 A, 500 V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state |
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16N50 O-220F 16N50 O-220F2 QW-R502-532 | |
16N50PContextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFA 16N50P IXFP 16N50P IXFH 16N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 |
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16N50P O-220 O-263 O-247 16N50P | |
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Contextual Info: Photoelectric sensors OHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34,5 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red laser diode |
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16N5001/S14 | |
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Contextual Info: Photoelectric sensors FHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw |
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16N5001/S14 | |
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Contextual Info: Photoelectric sensors FHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw |
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16N5001/S14 | |
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Contextual Info: Photoelectric sensors OHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34,5 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red laser diode |
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16N5001/S14 | |
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Contextual Info: Photoelectric sensors FHDM 16N5004/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw |
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16N5004/S14 | |
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Contextual Info: Photoelectric sensors FHDM 16N5004 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 3 4,3 12 30 4 15,4 * emitter axis general data type photo background suppression light source pulsed red LED sensing distance Tw 20 . 600 mm |
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16N5004 | |
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Contextual Info: Photoelectric sensors FHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw |
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16N5001/S14 | |
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Contextual Info: Photoelectric sensors FHDM 16N5004 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 3 4,3 12 30 4 15,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw 20 . 600 mm |
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16N5004 | |
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Contextual Info: Photoelectric sensors FHDM 16N5004/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw |
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16N5004/S14 | |
a8aaContextual Info: Optoelektronische Sensoren Photo electric sensors Cellules opto-électroniques Abmessungen Dimensions Dimensions OHDM 16N5001 Elektrischer Anschluss Connection diagram Schéma de raccordement BN 1 Í?*+Ã8ÂÂ*ÂPÎ *34,5 Z dark operate light operate 0V |
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16N5001 2002/95/EC a8aa | |
16n50
Abstract: 646V
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16N50P 16N50P O-220 O-263 O-247 16n50 646V | |
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Contextual Info: Advanced Technical Information PolarHVTM Power MOSFET IXTA 16N50P IXTP 16N50P IXTQ 16N50P VDSS ID25 = 500 V = 16 A Ω = 400 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ |
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16N50P 16N50P O-220 O-263 405B2 | |
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Contextual Info: Photoelectric sensors FHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data type photo background suppression light source pulsed red LED sensing distance Tw |
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16N5001/S14 prot34 | |
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Contextual Info: Photoelectric sensors FHDM 16N5001 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 3 4,3 12 30 4 15,4 * emitter axis general data type photo background suppression light source pulsed red LED sensing distance Tw 20 . 450 mm |
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16N5001 | |
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Contextual Info: Photoelectric sensors FHDM 16N5001 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 4,3 12 30 4 15,4 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw 20 . 450 mm |
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16N5001 | |
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Contextual Info: Photoelectric sensors OHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34,5 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red laser diode |
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16N5001/S14 | |
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Contextual Info: Photoelectric sensors OHDM 16N5001 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34,5 50 4,3 36 4,3 12 30 4 15,4 3 * emitter axis general data photo type background suppression light source pulsed red laser diode sensing distance Tw |
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16N5001 680nm | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 16N50 Power MOSFET 16 A, 500 V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220F1 The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state |
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16N50 O-220F1 16N50 O-220F2 QW-R502-532 | |
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Contextual Info: Photoelectric sensors FHDM 16N5004/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw |
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16N5004/S14 | |
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Contextual Info: Photoelectric sensors FHDM 16N5004 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 4,3 12 30 4 15,4 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw 20 . 600 mm |
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16N5004 | |
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Contextual Info: Photoelectric sensors FHDM 16N5001 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 4,3 12 30 4 15,4 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw 20 . 450 mm |
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16N5001 | |
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Contextual Info: Photoelectric sensors FHDM 16N5004/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw |
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16N5004/S14 | |