16MX16BIT Search Results

HYM72V16M636AT6

Abstract: RA12
Contextual Info: 16Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M636AT6 Series DESCRIPTION The Hyundai HYM72V16M636AT6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin

RA12

Contextual Info: 32Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M636T6 Series DESCRIPTION The Hyundai HYM72V32M636T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin

Contextual Info: 32Mx64bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M656B L T6 Series DESCRIPTION The HYM72V32M656B(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy

pc133 SDRAM DIMM package

Abstract: HYM72V32M636BT6-H
Contextual Info: 32Mx64bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M636B L T6 Series DESCRIPTION The HYM72V32M636B(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP

RA12

Abstract: HYM72V32M736BLT6-H
Contextual Info: 32Mx72bits PC133 SDRAM ECC SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M736B L T6 Series DESCRIPTION The HYM72V32M736B(L)T6 Series are 32Mx72bits Synchronous DRAM Modules. The modules are composed of ten 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy printed circuit board.

HYM72V16M656BTU6

Abstract: HYM72V16M656TU6-8 HYM72V16M656TU6-P HYM72V16M656TU6-S RA12
Contextual Info: 16Mx64 bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M656BTU6 Series DESCRIPTION The HYM72V16M656BTU6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy

Contextual Info: 32Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M636T6 Series DESCRIPTION The HYM72V32M636T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

Contextual Info: 16Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M636B L T6 Series DESCRIPTION The HYM72V16M636B(L)T6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144 pin glass-epoxy

Contextual Info: 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M 16Mx16bit Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

hynix nand spare area

Abstract: hy27us08561 HY27US HY27US08561M HY27US16561M hynix nand flash controller reset nand flash HYNIX HY27xSxx121mTxB
Contextual Info: HY27SS 08/16 561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Jul. 10. 2003 Preliminary 0.1 Renewal Product Group

Contextual Info: 64MB 90PIN PC133 CL3 SDRAM SO-DIMM With 16M X 16 3.3VOLT TS64MEP6100 Placement Description The TS64MEP6100 is a 16M bit x 32 Synchronous Dynamic RAM high-density memory modules. The TS64MEP6100 consists of 2 pieces of CMOS 16Mx16bits A Synchronous DRAMs in TSOP-II 400mil packages on a

Contextual Info: 168PIN PC133 Unbuffered DIMM 256MB With 16Mx16 CL3 TS32MLS64V6G Placement Description The TS32MLS64V6G is a 32M bit x 64 Synchronous Dynamic RAM high-density memory modules. The TS32MLS64V6G consists of 8 piece of CMOS 16Mx16bits Synchronous DRAMs in TSOP-II 400mil packages and a

HY57V561620F

Abstract: HY57V561620FTP HY57V561620FTP-HI HY57V561620FTP-H
Contextual Info: 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M 16Mx16bit Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

HY57V561620F

Abstract: HY57V561620FTP HY57V561620FTP-HI hy57v56 HY57V561620FLTP-6 HY57V561620FTP-6I Hynix sdram HY57V561620
Contextual Info: 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M 16Mx16bit Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

Contextual Info: 144PIN PC133 Unbuffered SO-DIMM 128MB With 16Mx16 CL3 TS16MSS64V6G Description Features The TS16MSS64V6G is a 16M bit x 64 Synchronous Dynamic • RoHS compliant products. RAM high-density memory module. The TS16MSS64V6G • Performance Range: PC133. consists of 4 piece of CMOS 16Mx16bits Synchronous DRAMs

Contextual Info: 168PIN PC133 Unbuffered DIMM 128MB with 16Mx16 CL3 TS16MLS64V6G Placement Description The TS16MLS64V6G is a 16M bit x 64 Synchronous Dynamic RAM high-density memory module. The TS16MLS64V6G consists of 4 piece of CMOS 16Mx16bits Synchronous DRAMs in TSOP-II 400mil packages and a

RA12

Contextual Info: 32Mx64bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M636B L T6 Series DESCRIPTION The HYM72V32M636B(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP

RA12

Contextual Info: 32Mx64bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M656B L T6 Series DESCRIPTION The HYM72V32M656B(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy

HYM72V16M636LT6

Abstract: RA12 hyundai chip id
Contextual Info: 16Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M636TU6 Series DESCRIPTION The Hyundai HYM72V16M636TU6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin

Contextual Info: 16Mx72 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M736BFU6 Series DESCRIPTION The HYM72V16M736BFU6 Series are 16Mx72bits Synchronous DRAM Modules. The modules are composed of five 16Mx16bits CMOS Synchronous DRAMs in 54ball FBGA package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin

Contextual Info: Preliminary HY27SS 08/16 561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Jul. 10. 2003 Preliminary

Contextual Info: Preliminary HY27SS 08/16 561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Jul. 10. 2003 Preliminary

hy27us08561A

Abstract: hy27us08561 HY27 HY27US 48pin-USOP1 hynix hy27 HY27USXX561A 16Mx16Bit
Contextual Info: HY27US 08/16 561A Series HY27SS(08/16)561A Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark Apr. 04. 2005 Preliminary

HY57V561620FTP-H

Abstract: HY57V561620FLTP-6
Contextual Info: 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M 16Mx16bit Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for