169 MHZ RF CHIP Search Results

Contextual Info: CC1200 Low Power, High Performance RF Transceiver Applications Low power, high performance, wireless systems with 1 to 1000 kbit/s data rate 169 / 433 / 868 / 915 / 920 MHz ISM/SRD bands Possible support for additional frequency bands: 137 – 160, 205 – 240 and 274 – 320 MHz

Contextual Info: CC1200 Low Power, High Performance RF Transceiver Applications Low power, high performance, wireless systems with up to 1250 kbit/s data rate 169 / 433 / 868 / 915 / 920 MHz ISM/SRD bands Possible support for additional frequency bands: 137 – 158.3, 205 – 237.5, and 274 – 316.6 MHz

Contextual Info: CC1200 Low Power, High Performance RF Transceiver Applications Low power, high performance, wireless systems with up to 1250 kbit/s data rate 169 / 433 / 868 / 915 / 920 MHz ISM/SRD bands Possible support for additional frequency bands: 137 – 158.3, 205 – 237.5, and 274 – 316.6 MHz

Contextual Info: CC1200 Low Power, High Performance RF Transceiver Applications Low power, high performance, wireless systems with 1 to 1000 kbit/s data rate 169 / 433 / 868 / 915 / 920 MHz ISM/SRD bands Possible support for additional frequency bands: 137 – 160, 205 – 240 and 274 – 320 MHz

Contextual Info: CC1200 Low Power, High Performance RF Transceiver Applications Low power, high performance, wireless systems with up to 1250 kbit/s data rate 169 / 433 / 868 / 915 / 920 MHz ISM/SRD bands Possible support for additional frequency bands: 137 – 158.3, 205 – 237.5, and 274 – 316.6 MHz

CGB7014-BD

Abstract: CGB7014-BD-000V DM6030HK TS3332LD
Contextual Info: DC-8.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier June 2007 - Rev 15-Jun-07 CGB7014-BD Features Chip Layout 18.5 dB Gain @ 6 GHz 24.5 dB Gain @ 850 MHz 36.0 dBm Output IP3 @ 850 MHz 3.5 dB Noise Figure @ 850 MHz 20.3 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

Contextual Info: DC-8.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier June 2007 - Rev 15-Jun-07 CGB7014-BD Features Chip Layout 18.5 dB Gain @ 6 GHz 24.5 dB Gain @ 850 MHz 36.0 dBm Output IP3 @ 850 MHz 3.5 dB Noise Figure @ 850 MHz 20.3 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

CGB7014-BD

Abstract: CGB7014-BD-000V DM6030HK TS3332LD
Contextual Info: DC-8.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 04-Apr-07 CGB7014-BD Features Chip Layout 18.5 dB Gain @ 6 GHz 24.5 dB Gain @ 850 MHz 36.0 dBm Output IP3 @ 850 MHz 3.5 dB Noise Figure @ 850 MHz 20.3 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

uln 2008

Abstract: BFP740 uln 2008 datasheet 825000 michael hiebel fundamentals of vector analysis Digital Oscilloscope Preamp Digital Oscilloscope Preamplifier BFP740 equivalent BFP740F LQP10A
Contextual Info: Application Note, Rev. 1.0, November 2008 Application Note No. 169 BFP740 SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 15 dB Gain, 1.3 dB Noise Figure & ~ 100 nanosecond Turn-On / Turn-Off Time For 802.11a & 802.11n “MIMO” Wireless LAN Applications

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

RF184

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POW ER Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen­ cies to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 0, 11/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This

XRF184

Abstract: MRF184 173 MHz RF CHIP 305 Power Mosfet MOTOROLA
Contextual Info: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistor MRF184 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device

Motorola 0936

Abstract: 305 Power Mosfet MOTOROLA 173 MHz RF CHIP
Contextual Info: MOTOROLA . . _ Order this document byMRFit>4/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF184 RF POWER Field-Efffect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequen­ cies to 1.0 GHz. The high gain and broadband performance of this device

Contextual Info: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-E ffect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen­ cies to 1.0 GHz. The high gain and broadband performance of these devices

CRCW12064701FKTA

Abstract: a113 bolt MW6IC1940NB A113 A114 A115 AN1955 C101 JESD22 MW6IC1940NBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 1, 1/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This

945 mosfet n

Abstract: motorola MOSFET 935 mrf184 MRF184S MRF184SR1 173 MHz RF CHIP
Contextual Info: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.

motorola MOSFET 935

Abstract: XRF184 MRF184 MRF184S 173 MHz RF CHIP
Contextual Info: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: CC1175 www.ti.com SWRS116D – AUGUST 2011 – REVISED OCTOBER 2013 High-Performance RF Transmitter for Narrowband Systems Check for Samples: CC1175 1 Introduction 1.1 Features • High-Performance, Single-Chip Transmitter – Very Low Phase Noise: –111 dBc/Hz at

MRF184

Abstract: MRF184R1 MRF184SR1 173 MHz RF CHIP
Contextual Info: MOTOROLA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: MOTOROLA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

MRF184

Abstract: MRF184R1 MRF184SR1
Contextual Info: MOTOROLA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: CC1201 www.ti.com SWRS154 – OCTOBER 2013 Low-Power, High-Performance RF Transceiver Check for Samples: CC1201 1 Introduction 1.1 Features • RF Performance and Analog Features: – High-Performance, Single-Chip Transceiver • Excellent Receiver Sensitivity:

MOTOROLA 934

Abstract: MOTOROLA 935 MRF184 MRF184R1 MRF184SR1
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices