165W SOLAR Search Results

photovoltaic module

Abstract: 165W solar Alpha Ningbo 165W 165W ALPHA PACKING INFORMATION Ningbo IEC61215 solar modules
Contextual Info: 165W Photovoltaic Module Alpha by Ningbo Encapsulated Design Resists Corrosion No Maintenance Required Quick and Easy Installation Designed According to IEC61215 Standard Alpha silicon solar modules use breakthrough technology perfected by nearly 40 years of manufacturing technology. These

165W solar

Abstract: solar
Contextual Info: EEMB BATTERY 165W Solar module No.ESP165S THE CUSTOM DESIGN: The left picture shows the format of this solar module. It could be changed according to the need of customer or designer. All the figures and parameters rely on the actual need of user. SPECIFICATIONS*

Contextual Info: SCT2120AF Datasheet N-channel SiC power MOSFET Outline VDSS 650V RDS on (Typ.) 120m ID 29A PD 165W TO220AB Inner circuit Features (2) 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source (1) 4) Easy to parallel

Contextual Info: SCT2160KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 160mW ID 22A PD 165W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode

Contextual Info: SCT2120AF Data Sheet N-channel SiC power MOSFET lOutline VDSS 650V RDS on (Typ.) 120mW ID 29A PD 165W lFeatures TO220AB (1) (2) (3) lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel

Contextual Info: SCT2160KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 160m ID 22A PD 165W TO-247 (1) (2) (3) Inner circuit (2) Features 1) Low on-resistance 2) Fast switching speed *1 (1) Gate (2) Drain (3) Source (1) 3) Fast reverse recovery

photovoltaic module bp

Abstract: IEC61215 BP Solar photovoltaic module 165W solar
Contextual Info: SX 3175 175 Watt Photovoltaic Module High-efficiency photovoltaic module using silicon nitride multicrystalline silicon cells. Performance Rated power Pmax Power tolerance Nominal voltage Limited Warranty1 175W ± 9% 24V 25 years Configuration N SX 3175N

Contextual Info: S2206 Data Sheet N-channel SiC power MOSFET bare die VDSS 650V RDS on (Typ.) 120mW ID 29A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode

Contextual Info: S2306 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 160mW ID 22A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode

L5-30R

Abstract: NEMA L5-30R 1000 va ups 800va ups 232C 9P-25P RS232C1 12kVA SIU801
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Magnetic Field Sensor FLC 100

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PIC16F72 inverter ups

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