1633 MOSFET Search Results

"rca application note"

Abstract: 36254 RFH30N12 RFH30N15
Contextual Info: Standard Power MOSFETs RFH30N12, RFH30N15 File N u m be r 1633 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM 30 A, 120 V - 150 V festoni = 0.075 Q Features: • ■ ■ ■ ■ ■ SOA is power-dissipation lim ited

RFK30N12

Abstract: C039 18198 RFH30N12 RFH30N15 Scans-00121260
Contextual Info: 3 8 7 5 0 8 T gT E ~ S O L Í D Standard Power MOSFETs 3 ñ 7 5 D ñ i DI G E S O LI » STATE STATE 0 1E o a i a n 3 18193 a D iT - ^ - '/S ’ _ RFH30N12, RFH30N15 File N u m b e r 1633 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode

ssh70n10a

Contextual Info: SSH70N10A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gale Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175t: Operating Temperature ■ ■ BVdss * 100 V ^DS on “

A2757

Abstract: pj 66 diode SSH70N10A 1633 MOSFET
Contextual Info: A d van ced Power MOSFET S S H 7 0 N 1 0 A FEATURES = 100 V b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = 70 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature

SSH70N10A

Abstract: MJ70a
Contextual Info: SSH70N10A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.023 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 70 A Improved Gate Charge Extended Safe Operating Area TO-3P Ο 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V

Contextual Info: AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC

500V12A

Contextual Info: AOW12N50/AOWF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOW12N50 & AOWF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing

Contextual Info: AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC

AOTF12N50L

Abstract: AOTF12N50 AOT12N50
Contextual Info: AOT12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

aotf12n50

Contextual Info: AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC

AOT13N50

Abstract: AOTF13N50
Contextual Info: AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

SSH70N10A

Contextual Info: Advanced SSH70N10A P o w e r MOSFET FEATURES bv • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea RDS on = 0.023 a lD = 70 A

AOTF12N50

Abstract: AOT12N50
Contextual Info: AOT12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

AOTF12N50L

Abstract: AOB12N50L AOT12N50L
Contextual Info: AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC

Contextual Info: AOW12N50/AOWF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOW12N50 & AOWF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing

Contextual Info: AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

SSH70N10A

Abstract: MJ70a
Contextual Info: SSH70N10A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.023 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 70 A Improved Gate Charge Extended Safe Operating Area TO-3P Ο 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V

Contextual Info: SSH70N10A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.023 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 70 A Improved Gate Charge Extended Safe Operating Area TO-3P Ο 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V

907 TRANSISTOR smd

Abstract: F75299 10d471 SC053
Contextual Info: ACT520 QC 1.5A Application Report High Performance QR Mode 18W Quick Changer Using ACT520 FEATURES • •      Quasi-Resonant PWM Controller Accurate CC with line and inductance compensation No-load Standby Power < 30mW Excellent Efficiency >80% with Low Cost 4N65 MOSFET

Contextual Info: DMP3035SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI V BR DSS Features and Benefits • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products -9.5 A • Occupies just 33% of the board area occupied by SO-8 enabling

Contextual Info: DMP3035SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits V BR DSS • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products -9.5 A • Occupies just 33% of the board area occupied by SO-8 enabling

Contextual Info: DMP3035SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI V BR DSS Features and Benefits • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products -9.5 A • Occupies just 33% of the board area occupied by SO-8 enabling