16100 27 Search Results

T-16114

Abstract: 16100 T1-QUAD8 T-16116 T-16105 T-16107 T-16103 T-16106 T-16100 T-16101
Contextual Info: T1 / E1 / ISDN PRI Quad T1/E1 8 Transformers per package For T1/E1/ISDN PRI Telecom Dual and Quad Transceiver Applications 1500 VRMS minimum Isolation 40-Pin Surface Mount 50 mil style package Electrical Specifications at 25O C Part Number T-16100 T-16101

Contextual Info: ROHM Group Rohm-Wako Kelantan SDN.BHD. Lot 1320, Kaw Perindustrian, Pengalan Chepa II Padang Tembak, 16100 Kota Bharu, Kelantan, Malaysia Tel: (09) 774-1500 Fax: (09) 774-1540 Rohm USA 2150 Commerce Drive, San Jose, CA 95131, USA Tel: (408) 432-2225 Fax: (408) 434-0531

A9HA

Abstract: SA11
Contextual Info: O K I Semiconductor MSM5 1 16100 _ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5116100 is a new generation dynamic organized as 16,777,216 w ord x 1-bit. The technology used to fabricate the M SM 5116100 is OKI's CMOS silicon gate process technology.

Contextual Info: PRELIMINARY KM23C16100 CMOS MASK ROM 16M-Bit 2M x8/1M x16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le organization T h e KM 23C 16100 is a fu lly s ta tic m a s k p ro g ra m m a b le 2 ,097,152 x 8 (byte m ode) ROM 1,040,576 x 16 (word m ode)

Contextual Info: KM41C16100 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16100 is a high speed CMOS 1 6 ,77 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: fc.M2752S O O M B m a 573 NECE / MOS INTEGRATED CIRCUIT / /¿PD42 S 16100 L,42 S 171 OOL | 16 M BIT DYNAMIC RAM 3 .3 V FAST PAGE MODE -PRELIMINARY-D ESCRIPTION The NEC ¡ i PD42S16100L and juPD42S17100L are 16 777 216 words by 1 b it dynamic CMOS RAM with

M 16100 39 2 1019

Contextual Info: SPC560P34L1, SPC560P34L3 SPC560P40L1, SPC560P40L3 32-bit Power Architecture based MCU with 320 KB Flash memory and 20 KB RAM for automotive chassis and safety applications Datasheet − production data Features • ■ Up to 64 MHz, single issue, 32-bit CPU core

Contextual Info: SPC560P34L1, SPC560P34L3 SPC560P40L1, SPC560P40L3 32-bit Power Architecture based MCU with 320 KB Flash memory and 20 KB RAM for automotive chassis and safety applications Features • Up to 64 MHz, single issue, 32-bit CPU core complex e200z0h – Compliant with Power Architecture®

spc560p34

Abstract: SPC560P34L1 SPC560P40L1 SPC560P SPC560P40 SPC560 SPC560P40L3 CRC-16-CCIT 1421D
Contextual Info: SPC560P34L1, SPC560P34L3 SPC560P40L1, SPC560P40L3 32-bit Power Architecture based MCU with 320 KB Flash memory and 20 KB RAM for automotive chassis and safety applications Datasheet − production data Features • ■ Up to 64 MHz, single issue, 32-bit CPU core

Contextual Info: TRASAR Horizontally Polarized Antennas Typical Mechanical Data The mechanical data presented below apply to the UHF TRASAR® transmitting antennas described on page 277. Loads are typical for 50 lb/ft2 2.4 kPa for flat surfaces and 33 lb/ft2 (1.6 kPa) for

173300

Contextual Info: TRASAR Horizontally Polarized Antennas Top Mounted Side Mounted Typical Mechanical Data The mechanical data presented below apply to the UHF TRASAR® transmitting antennas described on page 277. Loads are typical for 50 lb/ft2 2.4 kPa for flat surfaces and 33 lb/ft2 (1.6 kPa) for

A4-170

Abstract: IP1T1
Contextual Info: Current Transducer LAX SERIES IPN = 16 - 100 A Ref: LAX 100-NP For the electronic measurement of currents: DC, AC, pulsed . , with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Maxi. 16.5 mm

3 phase UPS

Abstract: 8 dip smps ic LEM Components ups design marking LEM LAX 100-NP
Contextual Info: Current Transducer LAX SERIES IPN = 16 - 100 A Ref: LAX 100-NP For the electronic measurement of currents: DC, AC, pulsed . , with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Maxi. 16.5 mm

R2 R3 R4

Contextual Info: R2, R3, R4 Industrial Electromagnetic Relays • • • • • • Compact size Relays of general application Cadmium - free contacts AC and DC coils For plug-in sockets, 35 mm rail mount or on panel mounting * WT mechanical indicator + lockable front test button - standard features of relays for plug-in sockets.

m6515

Abstract: O712 P6540 M65-100 solar inverter circuit O651 UPS FERRITE 40016 M6535
Contextual Info: M65&M71: Multi-E Choke High Energy Storage Chokes High Energy Storage Chokes for Inverter Applications Features -Based on copper foil windings around ferrite E shape cores. -High storage currents up to 120 Amps . -High efficiency (>99%) due to very low losses designs.

m6515

Abstract: P6510 UPS Choke UPS FERRITE M6535
Contextual Info: _ P R E M O M65&M71 : Multi-E Choke High Energy Storage Chokes High Energy Storage Chokes for Inverter Applications Features -Based on copper foil windings around ferrite E shape -High storage currents up to 120 Amps . -High efficiency (>99%) due to very low losses designs

diode r2m 26

Abstract: diode r2m HP 2530
Contextual Info: R2M / RY2 / RUC Industrial Electromagnetic Relays ● Relays of general application ● For plug-in sockets, 35 mm rail mount or on panel mounting ● Cadmium-free contacts ● R2M and RUC also for PCB and soldering connections ● AC and DC coils available

94V-0 SR-01

Contextual Info: SRAF1620 - SRAF16150 Isolated 16.0 AMPS. Schottky Barrier Rectifiers ITO-220AC .185 4.7 .173(4.4) .406(10.3) .390(9.90) .124(3.16) .118(3.00) .134(3.4)DIA .113(3.0)DIA .112(2.85) .100(2.55) .272(6.9) .248(6.3) Features .606(15.5) .583(14.8) Isolated Plastic package.

1954097-1

Abstract: POKE SSP-01TWB2UPW12 SSP-01TWB6UW12 SSP-01TWB6UWB12 wedge lamp 194 SSP-3157WB912 FLS4411000 441-1009-ND
Contextual Info: Based LEDs Fig. 1 Fig. 4 Fig. 3 Fig. 2 Fig. 6 Fig. 5 Ø.197 5.0 Ø 1.28 (32.5) Ø .59 Ø 1.024 (15) (26) Ø .39 (10) Ø 5.00 (Ø 0.197) .55 (14) .079 (2.0) CONTACT 1 SHELL CONTACT SHELL CONTACT 2 .63 (16) .27 (6.85) 45.00 (1.772) 2.047 (52) Fig. Ø 26.50

Contextual Info: MBRF1635 - MBRF16150 Isolated 16.0 AMPS. Schottky Barrier Rectifiers ITO-220AC .185 4.7 .173(4.4) .406(10.3) .390(9.90) .124(3.16) .118(3.00) .134(3.4)DIA .113(3.0)DIA .112(2.85) .100(2.55) .272(6.9) .248(6.3) Features .606(15.5) .583(14.8) Plastic material used carries Underwriters Laboratory

SC4M

Contextual Info: MEMORY ICs FUNCTION GUIDE 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : 60ns •7 • 70ns •8 : 80ns •10: 100ns ORGANIZATION • 8 • 9 •16 • 18 X1 X4 X8 X9 X16 X18 PROCESS & POWER •C CMOS, 5V •V CMOS, 3 3V PACKAGE

SRA16150

Contextual Info: SRA1620 - SRA16150 16.0 AMPS. Schottky Barrier Rectifiers TO-220AC .185 4.70 .175(4.44) .412(10.5) MAX .113(2.87) .103(2.62) Features .055(1.40) .045(1.14) DIA .154(3.91) .148(3.74) .27(6.86) .23(5.84) .594(15.1) .587(14.9) Low power loss, high efficiency.

mbr1635-mbr1645

Abstract: mbr16150 MBR1635
Contextual Info: MBR1635 - MBR16150 16.0 AMPS. Schottky Barrier Rectifiers TO-220AC .185 4.70 .175(4.44) .412(10.5) MAX .113(2.87) .103(2.62) Features .055(1.40) .045(1.14) DIA .154(3.91) .148(3.74) .27(6.86) .23(5.84) .594(15.1) .587(14.9) Plastic material used carries Underwriters

Contextual Info: MEMORY ICs FUNCTION GUIDE 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED 6 0n s ORGANIZATION •7 • 1: XI • 4: X4 70ns 80ns •1 0 100ns • 8 X8 • 9 X9 •1 6 X16 •1 8 X1S PROCESS & POWER •C CMOS. 5V •V CMOS. 3 3V PACKAGE