160M TYPE M Search Results

Contextual Info: SMD EMI PC Beads - SBC Series Packaging Specifications Tape Dimensions Tape Material Carrier tape : Black Conductive Polystyrene – Alloy Carrier tape: Polystyrene Cover type : Black Conductive Polystyrene – Alloy Cover type: Polyethyiene 160m m MIN. Blank Part

SBCB1104

Contextual Info: SMD Data Line EMI Filter – SBCB Series Packaging Specifications Tape Dimensions Tape Material Carrier : Black Conductive Polystyrene – Alloy C arriertape tape: Polystyrene Cover : Black Conductive Polystyrene – Alloy C overtype type: Polyethyiene 160m m M IN .

FMMTL619

Abstract: FMMTL720 ON895 DSA003705
Contextual Info: SOT23 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR FMMTL619 ISSUE 1 – NOVEMBER 1997 FEATURES Very low equivalent on-resistance; RCE sat =160mΩ at 1.25A COMPLEMENTARY TYPE – FMMTL720 PARTMARKING DETAIL – L69 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER

FMMTL617

Abstract: FMMTL717 A1M10 DSA003705
Contextual Info: SOT23 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR FMMTL717 ISSUE 1 – DECEMBER 1997 FEATURES Very low equivalent on-resistance; RCE sat =160mΩ at 1.25A COMPLEMENTARY TYPE – FMMTL617 PARTMARKING DETAIL – L77 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: 1/4 Structure Silicon Monolithic Products USB High side switch IC Type Features BD2220G Single channel of low ON resistance Typ = 160mΩ Nch power MOSFET built in 500mA Continuous current load Over current detection （Output off-latch operation） Under voltage lockout (UVLO)

BD2221G

Contextual Info: 1/4 Structure Silicon Monolithic Products USB High side switch IC Type Features BD2221G Single channel of low ON resistance Typ = 160mΩ Nch power MOSFET built in 500mA Continuous current load Over current detection （Output off-latch operation） Under voltage lockout (UVLO)

Contextual Info: VN808CM-E LOW THRESHOLD OCTAL HIGH SIDE DRIVER General Features Type RDS on Iout VCC VN808CM-E 160mΩ 0.7A 45V PowerSO-36 • CMOS COMPATIBLE INPUT ■ JUNCTION OVER-TEMPERATURE PROTECTION ■ CASE OVER-TEMPERATURE PROTECTION FOR THERMAL INDEPENDENCE OF THE

JESD97

Abstract: VN808CM-E VN808CMTR-E
Contextual Info: VN808CM-E Low threshold octal high side driver General features Type RDS on Iout VCC VN808CM-E 160mΩ 0.7A 45V • CMOS compatible input ■ Junction over-temperature protection ■ Case over-temperature protection for thermal independence of the channels

SMD Transistor 1020

Abstract: marking l69 FMMTL619
Contextual Info: Transistors IC SMD Type Medium Power Transistor FMMTL619 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Very low equivalent on-resistance;RCE sat =160mÙ at 1.25A. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

Contextual Info: TOSHIBA TC74ACT175 Quad D-Type Flip Flop with Clear Features: High Speed: fmax = 160M H z typ. at Vco = 5V • Low Power Dissipation: lcc = 8|iA (max.) at Ta = • Compatible with TTL Outputs: V IL =0.8V (max.); • 25°C V IH = 2V (min.) • Symmetrical Output Impedance: ll0Hl =

SMD TRANSISTOR MARKING 76

Abstract: data ic 25 transistor smd marking 94 smd ic marking 1A FMMTL717 FMMTL718
Contextual Info: Transistors IC SMD Type Medium Power Transistor FMMTL717 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Very low equivalent on-resistance;RCE sat =160mÙ at 1.25A. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

Contextual Info: Transistors IC SMD Type Product specification FMMTL717 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Very low equivalent on-resistance;RCE sat =160mÙ at 1.25A. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1

VNQ810-E

Contextual Info: VNQ810-E QUAD CHANNEL HIGH SIDE DRIVER Table 1. General Features Type VNQ810-E Figure 1. Package RDS on Iout VCC 160mΩ (*) 3.5A (*) 36V ) s ( ct (*) Per each channel CMOS COMPATIBLE INPUTS • OPEN DRAIN STATUS OUTPUTS ■ ON STATE OPEN LOAD DETECTION ■ OFF STATE OPEN LOAD DETECTION

Contextual Info: VNQ810P-E Quad channel high-side driver Features Type RDS on IOUT VCC VNQ810P-E 160mΩ(1) 3.5A(1) 36V 1. Per each channel. • ECOPACK : lead free and RoHS compliant ■ Automotive Grade: compliance with AEC guidelines ■ Very low standby current ■ CMOS compatible input

Contextual Info: VNQ810P-E Quad channel high-side driver Features Type RDS on IOUT VCC VNQ810P-E 160mΩ(1) 3.5A(1) 36V 1. Per each channel. • ECOPACK : lead free and RoHS compliant ■ Automotive Grade: compliance with AEC guidelines ■ Very low standby current ■ CMOS compatible input

npn 10 a 50 v to-3 germanium

Abstract: TO10 package germanium transistors NPN AD163 2N1041 AUY26 npn 10 a 50 v germanium 2n1040 germanium 2SB449
Contextual Info: POWER GERMANIUM TRANSISTORS Item Number «C Part Number Manufacturer Type Max V BR CEO (A) (V) Po Max h re fT ICBO Max k)N Max ON) Min (HZ) (A) (s) r (CE)ut T Oper Max (Ohms) Max (°C) 250m 250m 230m 160m 470m 500m 250m 250m 250m 750m 10 10 10 750m 10 10 10

Contextual Info: VNQ810 Quad channel high side driver Features Type RDS on IOUT VCC VNQ810 160mΩ(1) 3.5A(1) 36V ) s ( ct 1. Per each channel. u d o SO-28 (double island) • CMOS compatible inputs ■ Open Drain status outputs ■ On state open load detection ■ Off state open load detection

Contextual Info: VND810 Double channel high-side driver Features Type RDS on IOUT VCC VND810 160mΩ(1) 3.5A(1) 36V ) s ( ct 1. Per each channel. u d o SO-16 • CMOS compatible inputs ■ Open Drain status outputs ■ On-state open load detection Description ■ Off-state open load detection

470UH

Abstract: 310M CDH113 CDH115 CDH73 CDH74
Contextual Info: < POWER INDUCTORS SMD Type CDH73 > DIMENSIONS mm LAND PATTERNS (mm) CONSTRUCTION 外形寸法図 推奨ランド寸法 磁気構造図 2.4 2.0 3.3MAX. 0.2 8.4 5.8 7.6 8.0MAX. 5.4 1.5 7.3MAX. Solder Resist Outline ( 10µH - 220µH ) * In order to prevent short-circuiingt, a solder resist is recommended.

transistor A495

Abstract: r107c K5010 BF187 A495 2N3633 2SC622 BC131 BFS29P J BF214
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: POWER INDUCTORS < Pin Type > ø8 series RCH-855 DIMENSIONS mm Max. 5.5 5.0 5.0 ø0.7 Max. ø8.3 CONSTRUCTION ( 2.5µH - 10mH ) RCH-875 DIMENSIONS (mm) Max. 7.5 5.0 5.0 ø0.7 Max. ø8.3 CONSTRUCTION ( 2.2µH - 10mH ) RCH-895 DIMENSIONS (mm) Max. 9.5 5.0 5.0

transistor A495

Abstract: 2SC622 f4 f 150s 2n3131 2SC804 MM1758 2SC621A TMT697 2SC740 NPC187
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

PT9847

Abstract: ESM752A ESM952 sm2160 ESM952A PT9785 esm752 idd1313
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on PD Max hFE fT ON) Min (HZ) Max toN Max (A) (s) 'CBO r (CE)sat Toper Max (Ohms) Max (°C) Package Style ~ Devices 20 Watts or More, (Cont'd) 5 10 PT8854 PT8854A S G S F 6 6 2 (A)

Contextual Info: Non-Shielded PIN Type RCH-664 DIMENSIONS mm WIRE 外形寸法図 4.0 4.0 Max. 6.5 ø0.5 øMax. 6.5 線種 CONSTRUCTION 磁気構造図 ( 1.0µH - 1.0mH ) RCH-855 DIMENSIONS (mm) WIRE 外形寸法図 Max. 5.5 5.0 ø0.7 øMax. 8.3 線種 5.0 CONSTRUCTION 磁気構造図