2005 - V850E/IA1
Abstract: f2007 W2205 CA850 GHS multi RX850NEC RX850 U14559J V850E1 V850ES
Text: . 39 SIT (System Information Table , . 41 SIT , ID #define - sit.cf 5 3.3 3.2 CF850 - CA850 sit.s - GHS sit .850 - sys.h RX850 sit.s ( sit .850) C sys.h CF850 6 26 U17419JJ1V0UM 3 3.4 , ( ) - sample.dir (CA850 ) - sample.ld (GHS ) RX850 3-6RX850 . sit .text RX850
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RX850
U17419JJ1V0UM001
U17419JJ1V0UM
U17419JJ1V0.
V850E/IA1
f2007
W2205
CA850
GHS multi
RX850NEC
U14559J
V850E1
V850ES
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610J
Abstract: KV1580A-1 KV1580NT KV1580TL00 KV1581 KV1581A-2 KV1581A-3 KV1582M KV1583A KV15
Text: VR(V) min typ max VI (V) V2 (V) VR(V) f(MHz) VR(V) KV1580A-1 Sit Tun 100 30 424 21 440 23. 5 475 27 1 6. 5 17 17. 5 1 6. 5 200 1 1 0. 05 16 A Ct Sit , C3<2X A C6.5<2X 612 KV1581 Sit 100 30 424 21 44(1 23. 5 475 27 17 17. 5 1 6. 5 200 1 1 0. 05 10 , ) USE KV1583A Sit Tun 100 30 424 21 450 23. 5 475 27 1 6. 5 17 17. 5 1 6. 5 200 1 1 0.05 16 A Ct Sit Tun 100 30 424 21 440 23. 5 475 27 1 6. 5 17 17
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KV1580A-1
KV1580NT
KV1580TL00
KV158DTR00
KV1580TK00
KV1581
KV1811
KV1812
KV1812TLOO
KV1812TROO
610J
KV1580TL00
KV1581A-2
KV1581A-3
KV1582M
KV1583A
KV15
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424 8P
Abstract: 610J KV1580A-1 KV1580NT KV1580TL00 KV1581 KV1581A-2 KV1581A-3 KV1582M KV1583A
Text: VR(V) min typ max VI (V) V2 (V) VR(V) f(MHz) VR(V) KV1580A-1 Sit Tun 100 30 424 21 440 23. 5 475 27 1 6. 5 17 17. 5 1 6. 5 200 1 1 0. 05 16 A Ct Sit , C3<2X A C6.5<2X 612 KV1581 Sit 100 30 424 21 44(1 23. 5 475 27 17 17. 5 1 6. 5 200 1 1 0. 05 10 , ) USE KV1583A Sit Tun 100 30 424 21 450 23. 5 475 27 1 6. 5 17 17. 5 1 6. 5 200 1 1 0.05 16 A Ct Sit Tun 100 30 424 21 440 23. 5 475 27 1 6. 5 17 17
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KV1580A-1
KV1580NT
KV1580TL00
KV158DTR00
KV1580TK00
KV1581
KV1811
KV1812
KV1812TLOO
KV1812TROO
424 8P
610J
KV1580TL00
KV1581A-2
KV1581A-3
KV1582M
KV1583A
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J383
Abstract: J387 610J KV1580A-1 KV1580NT KV1580TL00 KV1581 KV1581A-2 KV1581A-3 KV1582M
Text: VR(V) min typ max VI (V) V2 (V) VR(V) f(MHz) VR(V) KV1580A-1 Sit Tun 100 30 424 21 440 23. 5 475 27 1 6. 5 17 17. 5 1 6. 5 200 1 1 0. 05 16 A Ct Sit , C3<2X A C6.5<2X 612 KV1581 Sit 100 30 424 21 44(1 23. 5 475 27 17 17. 5 1 6. 5 200 1 1 0. 05 10 , ) USE KV1583A Sit Tun 100 30 424 21 450 23. 5 475 27 1 6. 5 17 17. 5 1 6. 5 200 1 1 0.05 16 A Ct Sit Tun 100 30 424 21 440 23. 5 475 27 1 6. 5 17 17
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KV1580A-1
KV1580NT
KV1580TL00
KV158DTR00
KV1580TK00
KV1581
KV1811
KV1812
KV1812TLOO
KV1812TROO
J383
J387
610J
KV1580TL00
KV1581A-2
KV1581A-3
KV1582M
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610J
Abstract: KV1580A-1 KV1580NT KV1580TL00 KV1581 KV1581A-2 KV1581A-3 KV1582M KV1583A 0516A
Text: VR(V) min typ max VI (V) V2 (V) VR(V) f(MHz) VR(V) KV1580A-1 Sit Tun 100 30 424 21 440 23. 5 475 27 1 6. 5 17 17. 5 1 6. 5 200 1 1 0. 05 16 A Ct Sit , C3<2X A C6.5<2X 612 KV1581 Sit 100 30 424 21 44(1 23. 5 475 27 17 17. 5 1 6. 5 200 1 1 0. 05 10 , ) USE KV1583A Sit Tun 100 30 424 21 450 23. 5 475 27 1 6. 5 17 17. 5 1 6. 5 200 1 1 0.05 16 A Ct Sit Tun 100 30 424 21 440 23. 5 475 27 1 6. 5 17 17
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KV1580A-1
KV1580NT
KV1580TL00
KV158DTR00
KV1580TK00
KV1581
KV1811
KV1812
KV1812TLOO
KV1812TROO
610J
KV1580TL00
KV1581A-2
KV1581A-3
KV1582M
KV1583A
0516A
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2004 - GRM188R72E681KW07D
Abstract: GRM31BR72J472KW01L GRM32DR72E104KW01L GRM32DR72E224KW01L GRM32QR72J223KW01L GRM43DR72E474KW01L GRM43DR72J104KW01L T3D DIODE C02E10 DC630
Text: .2V (r.m.s.) #Pretreatment Perform a heat treatment at 150 W0 D for 60T5 min. and then Y10 let sit for , for 60T5 min. and then Y10 let sit for 24T2 hrs. at *room condition. No removal of the , solution at 260T5D for 10T1 sec. Let sit at *room condition for 24T2 hrs., then measure. #Immersing speed : 25T2.5mm/s #Pretreatment Perform a heat treatment at 150 W00 D for 60T5 min. and then Y10 let sit for , cycles according to the 4 heat treatments listed in the following table. Let sit for 24T2 hrs. at *room
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C02E10
40T2D
106kPa
GRM188R72E681KW07D
GRM31BR72J472KW01L
GRM32DR72E104KW01L
GRM32DR72E224KW01L
GRM32QR72J223KW01L
GRM43DR72E474KW01L
GRM43DR72J104KW01L
T3D DIODE
DC630
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610J
Abstract: KV1580A-1 KV1580NT KV1580TL00 KV1581 KV1581A-2 KV1581A-3 KV1582M KV1583A KV1821
Text: VR(V) min typ max VI (V) V2 (V) VR(V) f(MHz) VR(V) KV1580A-1 Sit Tun 100 30 424 21 440 23. 5 475 27 1 6. 5 17 17. 5 1 6. 5 200 1 1 0. 05 16 A Ct Sit , C3<2X A C6.5<2X 612 KV1581 Sit 100 30 424 21 44(1 23. 5 475 27 17 17. 5 1 6. 5 200 1 1 0. 05 10 , ) USE KV1583A Sit Tun 100 30 424 21 450 23. 5 475 27 1 6. 5 17 17. 5 1 6. 5 200 1 1 0.05 16 A Ct Sit Tun 100 30 424 21 440 23. 5 475 27 1 6. 5 17 17
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KV1580A-1
KV1580NT
KV1580TL00
KV158DTR00
KV1580TK00
KV1581
KV1812
KV1812TLOO
KV1812TROO
KV1812TB00
610J
KV1580TL00
KV1581A-2
KV1581A-3
KV1582M
KV1583A
KV1821
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2002 - GA252DB3E2472MY02L
Abstract: GA252DB3E2222MY02L GA252DB3E2223MY02L GA252DB3E2103MY02L GA252DB3E2473MY02L
Text: min and then let sit for 24T2 h at room condition. As in Fig., discharge is made 50 times at 5 s , solder solution at 260T5D for 10T1 s. Let sit at room condition for 24T2 h, then measure. #Immersing , sit for 24T2 h at room condition. *Preheating Pass the item No.4. Step 1 2 Temperature 100D to 120D , the following table. Let sit for 24T2 h at room condition, then measure. Time (min) Temperature (D , 3 #Pretreatment 00 Perform a heat treatment at 150 W Y10 D for 60T5 min and then let sit for 24T2 h
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C02E8
AC250V
GA252D
GA255D
40T2D
106kPa
GA252DB3E2472MY02L
GA252DB3E2222MY02L
GA252DB3E2223MY02L
GA252DB3E2103MY02L
GA252DB3E2473MY02L
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2009 - Not Available
Abstract: No abstract text available
Text: W125D) #Pretreatment 00 Perform a heat treatment at 150 W Y10 D for 60T5 min. and then let sit for , 260T5D for 10T1 sec. Let sit at room condition* for 24T2 hrs., then measure. #Immersing speed: 25T2.5mm/s #Pretreatment 00 Perform a heat treatment at 150 W Y10 D for 60T5 min. and then let sit for 24T2 hrs. at room , . Perform the 5 cycles according to the 4 heat treatments listed in the following table. Let sit for 24T2 , heat treatment at 150 W Y10 D for 60T5 min. and then let sit for 24T2 hrs. at room condition*. 16
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40T2D
106kPa
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1998 - Not Available
Abstract: No abstract text available
Text: Y10D for 60T5 min and then let sit for 24T2 h at room condition. Solder the capacitor to the testing , 260T5D for 10T1 s. Let sit at room condition for 24T2 h, then measure. #Immersing speed : 25T2.5mm/s #Pretreatment 0 Perform a heat treatment at 150W Y10D for 60T5 min and then let sit for 24T2 h at room condition , . Perform the five cycles according to the four heat treatments listed in the following table. Let sit for , treatment at 150W Y10D for 60T5 min and then let sit for 24T2 h at room condition. Fig. 4 Solder resist
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W125D
500T50V
250T50V
DC250V)
40T2D
106kPa
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2003 - C02E10
Abstract: GRM31BR72J103 grm55dr72j224 GRM55DR73A104KW01L GRM55DR72E474KW01L GRM32DR72E104KW01L
Text: treatment at 150 W Y10 D for 60T5 min. and then let sit for 24T2 hrs. at *room condition. The range of , . #Pretreatment W0 Perform a heat treatment at 150 Y 10 D for 60T5 min. and then let sit for 24T2 hrs. at *room , solution at 260T5D for 10T1 sec. Let sit at *room condition for 24T2 hrs., then measure. #Immersing speed : 25T2.5mm/s #Pretreatment 00 Perform a heat treatment at 150 W Y10 D for 60T5 min. and then let sit for 24T2 , sit for 24T2 hrs. at *room condition, then measure. Time (min.) Temperature (D) Step 30T3 Min
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C02E10
40T2D
106kPa
GRM31BR72J103
grm55dr72j224
GRM55DR73A104KW01L
GRM55DR72E474KW01L
GRM32DR72E104KW01L
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2002 - GRM43DR72J104KW01L
Abstract: No abstract text available
Text: let sit for 24T2 h at room condition. The range of capacitance change compared with the 20D (B), 25D , treatment at 150 W Y10 D for 60T5 min and then let sit for 24T2 h at room condition. Solder the capacitor to , capacitor in eutectic solder solution at 260T5D for 10T1 s. Let sit at room condition for 24T2 h, then , min and then let sit for 24T2 h at room condition. *Preheating for more than 3.2Z2.5mm 12 , treatments listed in the following table. Let sit for 24T2 h at room condition, then measure. Time (min
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C02E8
GRM21/31
GRM21A
GRM21B
GRM31B
GRM31C
GRM32Q
GRM32D
GRM43Q
GRM43D
GRM43DR72J104KW01L
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2000 - JIS-K-8101
Abstract: AC1500V CF10 CU10 AC575V
Text: . #Pretreatment Perform a heat treatment at 150 W00 D for 60T5 min and then Y10 let sit for 24T2 h at room , in eutectic solder solution at 260T5D for 10T1 s. Let sit at room condition for 24T2 h, then measure , Y10 let sit for 24T2 h at room condition. *Preheating Temperature Cycle Dielectric Strength , following table. Let sit for 24T2 h at room condition, then measure. Time (min) Temperature (D) Step 1 , to 3 #Pretreatment Perform a heat treatment at 150 W00 D for 60T5 min and then Y10 let sit for
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000pF
AC575V
AC1500V
500T50V
40T2D
106kPa
JIS-K-8101
AC1500V
CF10
CU10
AC575V
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1998 - marking ghm
Abstract: No abstract text available
Text: a heat treatment at 150W Y10D for 60T5 min and then let sit for 24T2 h at room condition. As in Fig , as table. Immerse the capacitor in eutectic solder solution at 260T5D for 10T1 s. Let sit at room , at 150W Y10D for 60T5 min and then let sit for 24T2 h at room condition. *Preheating Step 1 2 , table. Let sit for 24T2 h at room condition, then measure. Step Temperature (D) Time (min) 1 Min , Perform a heat treatment at 150W Y10D for 60T5 min and then let sit for 24T2 h at room condition
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GHM21xx
GHM22xx
2000M
AC575V
AC1500V
GHM22xx)
AC1000V
1000M
106kPa
40T2D
marking ghm
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2003 - GRM31BR72J103
Abstract: GRM31BR72J472KW01L GRM55X
Text: .) #Pretreatment 0 Perform a heat treatment at 150 W Y10 D for 60T5 min and then let sit for 24T2 h at room , min and then let sit for 24T2 h at room condition. Solder the capacitor to the testing jig (glass , min. Immerse the capacitor in eutectic solder solution at 260T5D for 10T1 s. Let sit at room condition , 150 W Y10 D for 60T5 min and then let sit for 24T2 h at room condition. *Preheating for more than , to the four heat treatments listed in the following table. Let sit for 24T2 h at room condition, then
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C02E9
DC250V)
40T2D
106kPa
GRM31BR72J103
GRM31BR72J472KW01L
GRM55X
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J113A
Abstract: 610J KV1580A-1 KV1580NT KV1580TL00 KV1581 KV1581A-2 KV1581A-3 KV1582M KV1583A
Text: VR(V) min typ max VI (V) V2 (V) VR(V) f(MHz) VR(V) KV1580A-1 Sit Tun 100 30 424 21 440 23. 5 475 27 1 6. 5 17 17. 5 1 6. 5 200 1 1 0. 05 16 A Ct Sit , C3<2X A C6.5<2X 612 KV1581 Sit 100 30 424 21 44(1 23. 5 475 27 17 17. 5 1 6. 5 200 1 1 0. 05 10 , ) USE KV1583A Sit Tun 100 30 424 21 450 23. 5 475 27 1 6. 5 17 17. 5 1 6. 5 200 1 1 0.05 16 A Ct Sit Tun 100 30 424 21 440 23. 5 475 27 1 6. 5 17 17
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KV1580A-1
KV1580NT
KV1580TL00
KV158DTR00
KV1580TK00
KV1581
Ct-14pF
26MIN
26M1N
28MIN
J113A
610J
KV1580TL00
KV1581A-2
KV1581A-3
KV1582M
KV1583A
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2000 - W125D
Abstract: No abstract text available
Text: at 150 W0 D for 60T5 min and then Y10 let sit for 24T2 h at room condition. No removal of the , 260T5D for 10T1 s. Let sit at room condition for 24T2 h, then measure. #Immersing speed : 25T2.5mm/s #Pretreatment Perform a heat treatment at 150 W00 D for 60T5 min and then Y10 let sit for 24T2 h at room , heat treatments listed in the following table. Let sit for 24T2 h at room condition, then measure , min and then Y10 let sit for 24T2 h at room condition. Dielectric Strength Pass the item No
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W125D
500T50V
250T50V
DC250V)
40T2D
106kPa
W125D
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2004 - GR443DR73D472KW01L
Abstract: GR442QR73D152KW01L C02E10 GR442QR73D101KW01L GR442QR73D121KW01L GR442QR73D151KW01L GR442QR73D181KW01L GR442QR73D102KW01L
Text: Y10 let sit for 24T2 hrs. at *room condition. The range of capacitance change compared with the 25D , . and then Y10 let sit for 24T2 hrs. at *room condition. Solder the capacitor to the testing jig , . Let sit at *room condition for 24T2 hrs., then measure. #Immersing speed : 25T2.5mm/s #Pretreatment Perform a heat treatment at 150 W00 D for 60T5 min. and then Y10 let sit for 24T2 hrs. at *room , listed in the following table. Let sit for 24T2 hrs. at *room condition, then measure. Time (min
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C02E10
40T2D
106kPa
GR443DR73D472KW01L
GR442QR73D152KW01L
GR442QR73D101KW01L
GR442QR73D121KW01L
GR442QR73D151KW01L
GR442QR73D181KW01L
GR442QR73D102KW01L
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1999 - Not Available
Abstract: No abstract text available
Text: . Immerse the capacitor in a eutectic solder solution at 270T5D for 10T0.5 seconds. Let sit at room , one hour and then let sit for 48T4 hours at room temperature. Perform the initial measurement , treatments listed in the following table. Let sit for 48T4 hours at room temperature, then measure. 1 Min , then let sit for 48T4 hours at room temperature. Perform the initial measurement. Sit the capacitor at 40T2D and 90 to 95% humidity for 500T12 hours. Remove and let sit for 48T4 hours at room temperature
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W125D
W885D
WithinT12
WithinT30%
000T12
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2000 - w10d
Abstract: W125D R-230 T3D 5n
Text: one hour and then Y10 let sit for 48T4 hours at room temperature. Perform the initial measurement , Perform the five cycles according to the four heat treatments listed in the following table. Let sit for , . Let sit at room temperature for 48T4 hours , then measure. No failure Appearance Temperature , then Y10 let sit for 48T4 hours at room temperature. Perform the initial measurement. Sit the capacitor at 40T2D and 90 to 95% humidity for 500T12 hours. Remove and let sit for 48T4 hours at room
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W125D
WithinT12
WithinT30%
000T12
w10d
W125D
R-230
T3D 5n
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7403P
Abstract: No abstract text available
Text: IN G -1 = 1 P O SIT IO N / N i SU LFAM ATE. HIGH GOLD. LEA D -FR EE 2 = 1 P O SIT IO N / N i SU LFAM ATE. HIGH GOLD. LEADED 3 = 2 P O SIT IO N / N i SU LFAM ATE. HIGH GOLD. LEA D-FR EE 5 = 2 P O SIT IO N / N i SU LFAM ATE. HIGH GOLD. LEADEO 7 = 3 P O SIT IO N / N i SU LFAM ATE. HIGH GOLD. LEADED 0 = 3 P O SIT IO N / N i SU LFAM ATE, HIGH GOLD. LEA D-FR EE A =1 P O SIT IO N / N i SU LFAM ATE. STAN O AR O GOLD. LEADED B =1 P O SIT IO N / N i SU LFAM ATE
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VER02
C-439-3200-500
7403P
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2000 - W125D
Abstract: No abstract text available
Text: min and Y10 then let sit for 24T2 h at room condition. 9 Adhesive Strength of Termination , solution at 260T5D for 10T1 s. Let sit at room condition for 24T2 h, then measure. #Immersing speed , min and then Y10 let sit for 24T2 h at room condition. *Preheating for more than 3.2Z2.5mm , five cycles according to the four heat treatments listed in the following table. Let sit for 24T2 h , high dielectric constant type Perform a heat treatment at 150 W0 D for 60T5 min and then Y10 let sit
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W125D
106kPa
W125D
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2009 - Not Available
Abstract: No abstract text available
Text: sit for 24T2 hrs. at room condition*. Solder the capacitor to the testing jig (glass epoxy board , sit at room condition* for 24T2 hrs., then measure. #Immersing speed: 25T2.5mm/s #Pretreatment 00 Perform a heat treatment at 150 W Y10 D for 60T5 min. and then let sit for 24T2 hrs. at room condition*. , according to the 4 heat treatments listed in the following table. Let sit for 24T2 hrs. at room condition , min. and then let sit for 24T2 hrs. at room condition*. Dielectric Strength In accordance with
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DC250V,
DC630V
40T2D
106kPa
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2005 - V850E/IA1
Abstract: CA850 RX850 U14559J V850E1 V850ES ghs 34 E2209 E2108 V850E/IA2
Text: . 59 SIT , . 54 SIT (System Information Table , : jarl _reset , lp - CA850 #_ sit , r10 mov #_rx_start , lp mov - GHS _ sit , r10 mov , ( ) r10 _ sit _rx_start jmp RX850 Pro reset (jarl _reset , lp) 2 3 2RX850 Pro RX850 , varfunc.c bss CA850 rompcrt.s _rcopy CA850 3 4 CA850 _ sit #_ sit , r10
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RX850
U17421JJ1V0UM001
U17421JJ1V0UM
CF850
V850E/IA1
CA850
U14559J
V850E1
V850ES
ghs 34
E2209
E2108
V850E/IA2
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1998 - GHM1540
Abstract: GHM3045 Iec384-14 GHM3145 GHM2145 223k x7r 50 cd 471k capacitor GHM1040 GHM1545 iec384
Text: Perform a heat treatment at 150W 0D for 60T5 min and Y10 then let sit for 24T2 h at room condition , s. Let sit at room condition for 24T2 h, then measure. #Immersing speed : 25T2.5mm/s #Pretreatment , sit for 24T2 h at room condition. *Preheating for more than 3.2Z2.5mm Step 1 2 No marking , listed in the following table. Let sit for 24T2 h at room condition, then measure. Step 1 2 3 4 , treatment at 150W 0D for 60T5 min and then Y10 let sit for 24T2 h at room condition. Solder resist Cu
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C16E-3.
C16E3
DC250V-3
15kV/AC250V
C16E-3
GHM1000
GHM1500
AC250V
GHM2000
GHM1540
GHM3045
Iec384-14
GHM3145
GHM2145
223k x7r 50
cd 471k capacitor
GHM1040
GHM1545
iec384
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