16-BIT PATA Search Results

Contextual Info: SIEMENS C16x-Family of High-Performance CMOS 16-Bit Microcontrollers C165 Preliminary C165 16-Bit Microcontroller • • • • • • • • • • • • • • • High Perform ance 16-bit CPU with 4-Stage Pipeline 100 ns Instruction Cycle Time at 20-M Hz CPU Clock

Contextual Info: SIEMENS 256 K x 16-Bit Dynamic RAM HYB 514171BJ-60/-70 Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 514171BJL-60/-70 Advanced Inform ation 262 144 w ords by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time Low Power dissipation

Contextual Info: SIEMENS C16x-Family of High-Performance CMOS 16-Bit Microcontrollers Preliminary SAB 80C166/83C166 • • • • • • • • • • • • • • • • • • • • • • • • • • SAB 80C166/83C166 16-Bit Microcontroller High Performance 16-bit CPU with 4-Stage Pipeline

3217b

Abstract: NEC 4216160 4216160 IC-3217B 4218160
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D escription The /iPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAMs.

256x16* STATIC RAM

Abstract: msm5416262 MSM5416282
Contextual Info: O K I Semiconductor MSM5416282 262,144-Word x 16-Bit M ultiport DRAM D E S C R IP T IO N The MSM5416282 is a 4-Mbit CMOS m ultiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and

Contextual Info: November 1993 Edition 2.0 FUJITSU DATA SHEET M B 8 14260-60/-70/-80 CMOS 256K X 16 BIT FAST PAGE MODE DYNAMIC RAM CMOS 262,144 x 16 bit Fast Page Mode Dynamic RAM The Fujitsu MB814260 is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory cells accessible in 16-bit increments. The MB814260 features a "fast page’ mode of

Contextual Info: MITSUBISHI MICROCOMPUTERS M37734M8BXXXFP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION •In te rru p ts . 19 types, 7 levels The M37734M8BXXXFP is a single-chip microcomputer using the •Multiple-function 16-bit tim e r. 5 + 3

FFF84

Contextual Info: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.

2216H

Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
Contextual Info: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.

4218160LE-60

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD 42S18160, 4 2 1 8 1 6 0 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ,uPD42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and

KM29N32000T

Abstract: km29n32000
Contextual Info: FLASH MEMORY KM29N32000T/R 4 M x 8 Bit N A N D Flash M em ory GENERAL DESCRIPTION FEATURES • Single 5.0 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x 8bit - Data Register : (512 + 16)bit x Sbit • Automatic Program and Erase - Page Program : (512 + 16)Byte

Contextual Info: TOSHIBA TMP93CS44/TMP93CS45 Low Voltage / Low Power CMOS 16-bit MICROCONTROLLERS TMP93CS44F / TMP93CS45F 1. OUTLINE AND DEVICE CHARACTERISTICS The TMP93CS44 / TMP93CS45 are high-speed, advanced 16-bit m icrocontrollers developed for controlling m edium to large-scale equipm ent. The TMP93CS45 does not

TS PQ4 24

Abstract: TS PQ4 12
Contextual Info: TOSHIBA TLCS-900 Series TMP96PM40F CMOS 16-bit Microcontrollers TMP96PM40F 1. Outline and Device Characteristics The TMP96PM40F are high-speed advanced 16-bit micro­ controllers developed for controlling medium to large-scale equipment. The TMP96C141AF does not have a ROM, the

Contextual Info: K M 4 16 V2 5 6 D J CMOS DRAM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

nec A2C

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT _ ¿ ¿ P P 421165 1 M-BIT DYNAMIC RAM 64K-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The ¿¿PD421165 is a 65,536 words by 16 bits CMOS dynamic RAM with optional hyper page mode (EDO).

TRW J500

Abstract: k45752 52S marking
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4260L, 424260L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The fiPD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page mode and

LY 9525

Abstract: 80186 segmentation tc 8066 part number GI 956 STR F 6234 REPLACEMENT INTEL 386 DX DE 32 BITS
Contextual Info: in te i Intel386 DX MICROPROCESSOR 32-BIT CHMOS MICROPROCESSOR WITH INTEGRATED MEMORY MANAGEMENT Flexible 32-Bit Microprocessor — 8, 16, 32-Bit Data Types — 8 General Purpose 32-Bit Registers Very Large Address Space — 4 Gigabyte Physical — 64 Terabyte Virtual

Contextual Info: N EC MOS INTEGRATED CIRCUIT ju P D 4216165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The ¿IPD4216165 is a 1 048 576 words by 16 bits dynamic C M O S RAM with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation,

Contextual Info: MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The ì ì PD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page

Contextual Info: KM416C1004A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1004A/A-L/A-F is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized fo r high performance

A30Z

Abstract: 3224B V256D ttl 74112
Contextual Info: KM416V256DJ CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mods CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: N EC MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ HPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 w o rd s by 16 bits d yn a m ic CMOS RAMs.

93C06

Contextual Info: & 93C06 Microchip 256 Bits 16 X 16 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • • • • • • • • • • The M icrochip Technology Inc. 93C06 is a 256 bit serial Electrically Erasable PROM. The device memory is configured as 16 x 16 bits. Advanced CMOS technology

wj da11 pin

Abstract: 22TCW
Contextual Info: •HYUNDAI H Y 5 1 1 6 1 6 0 B S e r ie s 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide