16-BIT 555 PIN DIAGRAM Search Results

Contextual Info: Issue 5.0 November 1999 Description Block Diagram Available in PGA PUMA 2 and Gullwing (PUMA77) footprints. The PUMA *F16006 is a 16MBit FLASH module user configurable as 512K x 32, 1M x 16 or 2M x 8. The device is available with access times of 70, 90

Contextual Info: Issue 5.1 May 2001 Description Block Diagram Available in PGA PUMA 2 and Gullwing (PUMA77) footprints. The PUMA *F16006 is a 16MBit FLASH module user configurable as 512K x 32, 1M x 16 or 2M x 8. The device is available with access times of 70, 90 and 120ns.

Contextual Info: DENSE-PAC 2 Megabit SRAM / 8 Megabit FLASH DP3SZ128512X16NY5 MICROSYSTEMS A D V A N C ED INFO RM ATIO N D E S C R IP T IO N : PIN -O U T DIAGRAM The D P3SZ12851 2X1 6 N Y 5 m o d u le s are a re v o lu tio n a ry new m em ory subsystem using D ense-P ac M ic ro s y s te m s ’ TSO P s ta c k in g

Contextual Info: AmPDL128G Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

1A4000

Contextual Info: Am29PDL128G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

AT49BV162A

Abstract: AT49BV162AT AT49BV163A AT49BV163AT AT49BV162A-70TU
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 55 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout

AT49BV162AT

Abstract: AT49BV163A AT49BV162A-70TU AT49BV162AT-70TU AT49BV162A AT49BV163AT AT49BV162A70TU
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 55 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout

Contextual Info: FlashFlex51 MCU SST89E564RD / SST89V564RD / SST89E554RC / SST89V554RC SST89E/V564RD SST89E/VE554RC FlashFlex51 MCU Preliminary Specifications FEATURES: • 8-bit 8051 Family Compatible Microcontroller MCU with Embedded SuperFlash Memory • SST89E564RD/SST89E554RC is 5V Operation

micron emmc

Abstract: "i2s decoder" RCA 8024 TEA 1733 NXP INT30M movinand mmc EXT_CSD micron emmc 4.4 PSR57 psr16
Contextual Info: UM10314 LPC3130/31 User manual Rev. 1 — 4 March 2009 Document information Info Content Keywords LPC3130, LPC3131, ARM9, USB Abstract LPC3130/31 User manual User manual UM10314 NXP Semiconductors LPC3130/31 User manual Revision history Rev Date Description

Contextual Info: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 1.5, OCT. 30, 2013 1 MX29GL256F Contents FEATURES. 5

Contextual Info: Features • Single Voltage Read/Write Operation: 1.65V to 1.95V • Access Time – 80 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

AT49SV802A

Abstract: AT49SV802AT
Contextual Info: Features • Single Voltage Read/Write Operation: 1.65V to 1.95V • Access Time – 90 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

Contextual Info: Features • 32-Mbit Flash and 4-Mbit/8-Mbit SRAM • Single 66-ball 8 mm x 10 mm x 1.2 mm CBGA Package • 2.7V to 3.3V Operating Voltage Flash • 2.7V to 3.3V Read/Write • Access Time – 70 ns • Sector Erase Architecture • • • • • • •

Contextual Info: MX68GL1G0F MX68GL1G0F DATASHEET P/N:PM1727 REV. 1.3, OCT. 30, 2013 1 MX68GL1G0F Contents 1. FEATURES. 5

Contextual Info: MX29GL128F MX29GL128F DATASHEET P/N:PM1683 REV. 1.4, OCT. 30, 2013 1 MX29GL128F Contents FEATURES. 5

Contextual Info: MX29GL512E H/L MX29GL512E H/L DATASHEET The MX29GL512E product family is not recommended for new designs. The MX29GL512F family is the recommended replacement. Please refer to MX29GL512F datasheet for full specifications and ordering information, or contact your local sales representative for

AT49BV320

Abstract: AT49BV320T AT49BV321 AT49BV321T AT49LV320 AT49LV320T AT49LV321 AT49LV321T 3FE00 AT49LV321T-90TI
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.3V BV , 3.0V to 3.6V (LV) • Access Time – 85 ns • Sector Erase Architecture • • • • • • • • • • • – Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout

Contextual Info: MX29GL512F MX29GL512F DATASHEET P/N:PM1617 REV. 1.6, OCT. 30, 2013 1 MX29GL512F Contents FEATURES. 5

AT49BV162A

Abstract: AT49BV162AT
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.3V BV , 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • – Fifteen 32K Word (64K Bytes) Sectors with Individual Write Lockout

nc 555

Abstract: AT49SV802A AT49SV802AT
Contextual Info: Features • Single Voltage Read/Write Operation: 1.65V to 1.95V • Access Time – 90 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

AT49BV802A

Abstract: AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

AT52BR3224

Abstract: AT52BR3224T AT52BR3228 AT52BR3228T 3228-T
Contextual Info: Features • 32-Mbit Flash and 4-Mbit/8-Mbit SRAM • Single 66-ball 8 mm x 11 mm x 1.2 mm CBGA Package • 2.7V to 3.3V Operating Voltage Flash • 2.7V to 3.3V Read/Write • Access Time – 85 ns • Sector Erase Architecture • • • • • • •