16-bank datasheet & application notes

Part	Manufacturer	Description
707278L20PFI	Renesas Electronics Corporation	Bank Switchable DP RAM
707278S15PF9	Renesas Electronics Corporation	Bank Switchable DP RAM
707288L12PF	Renesas Electronics Corporation	Bank Switchable DP RAM
707288L20PF9	Renesas Electronics Corporation	Bank Switchable DP RAM
707288S12PF9	Renesas Electronics Corporation	Bank Switchable DP RAM
707288S35PF	Renesas Electronics Corporation	Bank Switchable DP RAM

16-bank Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2004 - Not Available Abstract: No abstract text available Text: IS42S46400A (4- bank x 16,777,216 - word x 4-bit) IS42S83200A (4- bank x 8,388,608 - word x 8-bit) IS42S16160A (4- bank x 4,194,304 - word x 16-bit) ISSI Â® 256 Mb Synchronous DRAM AUGUST 2004 DESCRIPTION IS42S46400A is organized as 4- bank x 16,777,216-word x 4-bit Synchronous DRAM with LVTTL interface and IS42S83200A is organized as 4- bank x 8,388,608-word x 8-bit and IS42S16160A is organized as 4- bank x 4,194, 304-word x 16-bit. All inputs and outputs are referenced to the rising edge of	Original	PDF	IS42S46400A IS42S83200A IS42S16160A 16-bit) IS42S46400A 216-word IS42S83200A 608-word IS42S16160A 304-word
2004 - Not Available Abstract: No abstract text available Text: IS42S46400A (4- bank x 16,777,216 - word x 4-bit) IS42S83200A (4- bank x 8,388,608 - word x 8-bit) IS42S16160A (4- bank x 4,194,304 - word x 16-bit) ISSI AUGUST 2004 ® 256 Mb Synchronous DRAM DESCRIPTION IS42S46400A is organized as 4- bank x 16,777,216-word x 4-bit Synchronous DRAM with LVTTL interface and IS42S83200A is organized as 4- bank x 8,388,608-word x 8-bit and IS42S16160A is organized as 4- bank x 4,194, 304-word x 16-bit. All inputs and outputs are referenced to the rising edge of	Original	PDF	IS42S46400A IS42S83200A IS42S16160A 16-bit) IS42S46400A 216-word IS42S83200A 608-word IS42S16160A 304-word
M/AS4C16M16S Abstract: No abstract text available Text: MHz Fully synchronous operation Internal pipelined architecture 4M word x 16-bit x 4- bank , Input Bank Activate: BA0, BA1 input select the bank for operation. BA1 BA0 Select Bank 0 0 BANK #A 0 1 BANK #B 1 0 BANK #C 1 1 BANK #D A0-A12 Input , available in the respective bank . During a Precharge command, A10 is sampled to determine if all banks are , command decoder. All commands are masked when CS# is sampled HIGH. CS# provides for external bank	Original	PDF	AS4C16M16S 256Mb 16-bit cycles/64ms AS4C16M16S-5TCN AS4C16M16S-6TCN AS4C16M16S-6TIN AS4C16M16S-7TCN AS4C16M16S-7BCN M/AS4C16M16S
a2v28s40 Abstract: A2V28S MIRA SDRAM p2v28s40dtp sdram 4 bank 4096 16 P2V28S20ATP-7 P2V28S20DTP-7 P2V28S30ATP-7 P2V28S40ATP-7 a2v28s40atp Text: 128Mb Synchronous DRAM P2V28S20ATP-7,-75,-8 (4- BANK x 8,388,608-WORD x 4-BIT) P2V28S30ATP-7,-75,-8 (4- BANK x 4,194,304-WORD x 8-BIT) P2V28S40ATP-7,-75,-8 (4- BANK x 2,097,152-WORD x 16 , :886-2-25174575 JULY.2000 Rev.2.2 128Mb Synchronous DRAM P2V28S20ATP-7,-75,-8 (4- BANK x 8,388,608-WORD x 4-BIT) P2V28S30ATP-7,-75,-8 (4- BANK x 4,194,304-WORD x 8-BIT) P2V28S40ATP-7,-75,-8 (4- BANK x 2 , P2V28S40ATP-7,-75,-8 PRELIMINARY (4- BANK x 8,388,608-WORD x 4-BIT) (4- BANK x 4,194,304-WORD x 8-BIT) (4- BANK	Original	PDF	128Mb P2V28S20ATP-7 608-WORD P2V28S30ATP-7 304-WORD P2V28S40ATP-7 152-WORD 16-BIT) P2V28S20DTP-7 a2v28s40 A2V28S MIRA SDRAM p2v28s40dtp sdram 4 bank 4096 16 a2v28s40atp
sdram 1m x 4x 32 Abstract: EM636165 EM636165TS Text: power Internal pipelined architecture 512K word x 16-bit x 2- bank Programmable Mode registers - CAS , CELL ARRAY ( BANK #0) Sense Amplifier COLUMN COUNTER DQs Buffer A11 ADDRESS BUFFER MODE , ARRAY ( BANK #1) Column Decoder 3 Rev. 3.1 Jul. 2007 EtronTech 1M x 16 SDRAM , Bank Select: A11(BS) defines to which bank the BankActivate, Read, Write, or BankPrecharge command is , ) to select one location out of the 256K available in the respective bank . During a Precharge command	Original	PDF	EM636165 Jul/2007) 16-bit cycles/32ms 50-pin 60-ball, 1Mx16 60-Ball sdram 1m x 4x 32 EM636165 EM636165TS
EM636165 Abstract: No abstract text available Text: low power Internal pipelined architecture 512K word x 16-bit x 2- bank Programmable Mode registers , CONTROL SIGNAL GENERATOR 2048 X 256 X 16 CELL ARRAY ( BANK #0) Sense Amplifier COLUMN COUNTER , Decoder A0 DQ0 DQ15 2048 X 256 X 16 CELL ARRAY ( BANK #1) Column Decoder 3 Rev. 3.2 , , providing low standby power. A11 Input Bank Select: A11(BS) defines to which bank the BankActivate , respective bank . During a Precharge command, A10 is sampled to determine if both banks are to be precharged	Original	PDF	EM636165 16-bit cycles/64ms 50-pin 60-ball, 1Mx16 60-Ball EM636165
EM636165 Abstract: EM636165TS be55g Text: architecture 512K word x 16-bit x 2- bank Programmable Mode registers - CAS# Latency: 1, 2, or 3 - Burst , X 256 X 16 CELL ARRAY ( BANK #0) Sense Amplifier COLUMN COUNTER DQs Buffer A0 A11 , 2048 X 256 X 16 CELL ARRAY ( BANK #1) Column Decoder Preliminary 3 Rev. 2.7 Mar. 2006 , Input Bank Select: A11(BS) defines to which bank the BankActivate, Read, Write, or BankPrecharge , Precharge) to select one location out of the 256K available in the respective bank . During a Precharge	Original	PDF	EM636165 16-bit cycles/64ms 50-pin 60-bax 1Mx16 60-Ball EM636165VE EM636165BE EM636165 EM636165TS be55g
2004 - p2v56s Abstract: No abstract text available Text: : 886-2-2517-4575 http: // www.deutron.com.tw 256Mb Synchronous DRAM 256Mb Synchronous DRAM P2V56S20BTP (4- BANK x 16,777,216-WORD x 4-BIT) P2V56S30BTP (4- BANK x 8,388,608-WORD x 8-BIT) P2V56S40BTP (4- BANK x 4 , Synchronous DRAM 256Mb Synchronous DRAM P2V56S20BTP (4- BANK x 16,777,216-WORD x 4-BIT) P2V56S30BTP (4- BANK x 8,388,608-WORD x 8-BIT) P2V56S40BTP (4- BANK x 4,194,304-WORD x 16-BIT) P2V56S20BTP P2V56S30BTP P2V56S40BTP PRELIMINARY (4- BANK x 16,777,216-WORD x 4-BIT) (4- BANK x 8,388,6084-WORD x 8	Original	PDF	256Mb P2V56S20BTP P2V56S30BTP P2V56S40BTP 216-WORD 608-WORD p2v56s
2012 - Not Available Abstract: No abstract text available Text: : 200/166/143 MHz Fully synchronous operation Internal pipelined architecture 4M word x 16-bit x 4- bank , modes, providing low standby power. BA0,BA1 Input Bank Activate: BA0, BA1 input select the bank for operation. BA1 BA0 Select Bank 0 0 BANK #A 0 1 BANK #B 1 0 BANK #C 1 1 BANK #D A0-A12 Input Address Inputs: A0-A12 are sampled during the , Precharge) to select one location out of the 4M available in the respective bank . During a Precharge	Original	PDF	AS4C16M16S 256Mb 16-bit AS4C16M16S-6TCN AS4C16M16S-6TIN AS4C16M16S-7TCN AS4C16M16S-7BCN AS4C16M16S-6BIN 16M16S
2012 - Not Available Abstract: No abstract text available Text: : 200/166/143 MHz Fully synchronous operation Internal pipelined architecture 4M word x 16-bit x 4- bank , modes, providing low standby power. BA0,BA1 Input Bank Activate: BA0, BA1 input select the bank for operation. BA1 BA0 Select Bank 0 0 BANK #A 0 1 BANK #B 1 0 BANK #C 1 1 BANK #D A0-A12 Input Address Inputs: A0-A12 are sampled during the , Precharge) to select one location out of the 4M available in the respective bank . During a Precharge	Original	PDF	AS4C16M16S 256Mb 16-bit AS4C16M16S-6TCN AS4C16M16S-6TIN AS4C16M16S-7TCN AS4C16M16S-7BCN AS4C16M16S-6BIN 16M16S
Multi Chip Memory Abstract: 66-ball F0000H-F7FFFH Text: program or erase cycle completion · Read While Write Operation between Bank I, Bank II, Bank III, Bank , Auto program for Bank I (4Mb) and Bank II (4Mb) - Word Programming (1 word) - Page Programming (128 word) · Auto program for Bank III (12Mb) and Bank IV (12Mb) - Page programming (128 word) · Auto , banks of Bank I, BankII, Bank III and Bank IV. The device offers access times of 70ns/90ns, and a low , , SRAM/85ns Flash Bank I : 2 x 4K Word Boot 6 x 4K Word Parameter 7 x 32K Word Main Bank II : 8	Original	PDF	MX69LW3221/3241T/B 32M-BIT 70/90ns 70/85ns PM0924 SEP/16/2002 Multi Chip Memory 66-ball F0000H-F7FFFH
2004 - Not Available Abstract: No abstract text available Text: IS42S46400A (4- bank x 16,777,216 - word x 4-bit) IS42S83200A (4- bank x 8,388,608 - word x 8-bit) IS42S16160A (4- bank x 4,194,304 - word x 16-bit) ISSI AUGUST 2004 ® 256 Mb Synchronous DRAM DESCRIPTION IS42S46400A is organized as 4- bank x 16,777,216-word x 4-bit Synchronous DRAM with LVTTL interface and IS42S83200A is organized as 4- bank x 8,388,608-word x 8-bit and IS42S16160A is organized as 4- bank x 4,194, 304-word x 16-bit. All inputs and outputs are referenced to the rising edge of	Original	PDF	IS42S46400A IS42S83200A IS42S16160A 16-bit) IS42S46400A 216-word IS42S83200A 608-word IS42S16160A 304-word
EM639165TS-6G Abstract: EM639165TS MX16 EM639165TS-7G EM639165TS7G EM639165 EM639165TS-6LG Text: MHz Fully synchronous operation Internal pipelined architecture 2M word x 16-bit x 4- bank , ~ A11 BA0 BA1 2 MX16 CELL ARRAY ( BANK #A) De co der ADDRESS BUFFER DQ0 \| DQ15 2 MX16 CELL ARRAY ( BANK #B) Column Decoder REFRESH COUNTER De co der 2 MX16 CELL ARRAY ( BANK #C) Column Decoder De co der 2 MX16 CELL ARRAY ( BANK #D) Column Decoder 2 Rev , , providing low standby power. BA0,BA1 Input Bank Select: BA0,BA1 input select the bank for	Original	PDF	EM639165 16-bit cycles/64ms 54-pin EM639165 EM639165TS-6G EM639165TS MX16 EM639165TS-7G EM639165TS7G EM639165TS-6LG
AS4C16M16S-6TIN Abstract: AS4C16M16S Text: synchronous operation Internal pipelined architecture 4M word x 16-bit x 4- bank Programmable Mode registers , , providing low standby power. BA0,BA1 Input Bank Activate: BA0, BA1 input select the bank for operation. BA1 BA0 Select Bank 0 0 BANK #A 0 1 BANK #B 1 0 BANK #C 1 1 BANK #D A0-A12 Input Address Inputs: A0-A12 are sampled during the BankActivate , ) to select one location out of the 4M available in the respective bank . During a Precharge command	Original	PDF	AS4C16M16S 256Mb 16-bit cycles/64ms AS4C16M16S-5TCN AS4C16M16S-6TCN AS4C16M16S-6TIN AS4C16M16S-6TIN AS4C16M16S

2012 - Not Available Abstract: No abstract text available Text: synchronous operation Internal pipelined architecture 4M word x 16-bit x 4- bank Programmable Mode registers - , CLK, are disabled during Power Down and Self Refresh modes, providing low standby power. Bank Activate: BA0, BA1 input select the bank for operation. BA1 0 0 1 1 A0-A12 Input BA0 0 1 0 1 Select Bank BANK #A BANK #B BANK #C BANK #D CKE Input BA0,BA1 Input Address Inputs: A0-A12 are sampled , defining Auto Precharge) to select one location out of the 4M available in the respective bank . During a	Original	PDF	AS4C16M16S 256Mb 16-bit cycles/64ms 54-pin AS4C16M16S AS4C16M16S-5TCN AS4C16M16S-6TCN
2003 - Not Available Abstract: No abstract text available Text: : 886-2-2517-4575 http: // www.deutron.com.tw 64Mb Synchronous DRAM P2V64S20DTP ( 4- BANK x 4,194,304-WORD x 4-BIT) P2V64S30DTP (4- BANK x 2,097,152-WORD x 8-BIT) P2V64S40DTP (4- BANK x 1,048,576-WORD x 16-BIT) ORDERING , Interface V : LVTTL MIRA DRAM Sep.2003 Rev.2.6 64Mb Synchronous DRAM P2V64S20DTP ( 4- BANK x 4,194,304-WORD x 4-BIT) P2V64S30DTP (4- BANK x 2,097,152-WORD x 8-BIT) P2V64S40DTP (4- BANK x 1,048,576-WORD x 16-BIT) P2V64S20DTP (4- BANK x 4,194,304-WORD x 4-BIT) P2V64S30DTP (4- BANK x 2,097,152	Original	PDF	P2V64S20DTP P2V64S30DTP P2V64S40DTP 304-WORD 152-WORD 576-WORD 16-BIT)
2012 - AS4C16M16S Abstract: 3MA18 AS4C16M16S-6TCN AS4C16M16S-7BCN AS4C16M16S-5TCN Text: synchronous operation Internal pipelined architecture 4M word x 16-bit x 4- bank Programmable Mode registers - , standby power. Bank Activate: BA0, BA1 input select the bank for operation. BA1 0 0 1 1 A0-A12 Input BA0 0 1 0 1 Select Bank BANK #A BANK #B BANK #C BANK #D CKE Input BA0,BA1 Input Address , the respective bank . During a Precharge command, A10 is sampled to determine if all banks are to be , masked when CS# is sampled HIGH. CS# provides for external bank selection on systems with multiple banks	Original	PDF	AS4C16M16S 256Mb 16-bit cycles/64ms 54-pin AS4C16M16S AS4C16M16S-5TCN AS4C16M16S-6TCN 3MA18 AS4C16M16S-7BCN
GLT51280L16 Abstract: GLT51280L16L Text: x 16 x 4 (word x bit x bank ), respectively. The synchronous DRAMs achieved high-speed data transfer , cycle · Quad internal banks controlled by BA0 & BA1 ( Bank Select) · Byte control by LDQM and UDQM · , : sales@glink.com.tw TEL : 886-2-27968078 -2- Function DQ Mask Enable Address Input Bank Address Power , Register Row Address Buffer & Burst counter Bank D Bank C Bank B Row Decoder Data Control , Decoder CS Bank A DQ G -LINK GLT51280L16 8M X 16 CMOS Synchronous Dynamic RAM Feb 2004	Original	PDF	GLT51280L16 GLT51280L16 728-bit 166MHz. 54-pin GLT51280L16L
GLT5640AL16 Abstract: No abstract text available Text: 1,048,576 x 16 x 4 (word x bit x bank ), respectively. The synchronous DRAMs achieved high-speed , Possible to assert random column access in every cycle · Quad internal banks controlled by BA0 & BA1 ( Bank , Mask Enable Address Input Bank Address Power Supply Power Supply for DQ Ground Ground for DQ , Bank D Bank C Bank B Row Decoder Data Control Circuit G-Link Technology Corporation, Taiwan , counter Latch Circuit CAS Control Logic RAS Command Decoder CS Bank A DQ G	Original	PDF	GLT5640AL16 GLT5640AL16 864-bit 183MHz. 54-pin
2001 - MSAB Abstract: No abstract text available Text: /80/40)4(BGA) is a four bank Synchronous DRAM organized as 4 banks x 2Mbit x 16, 4 banks x 4Mbit x 8 , Column decoder Sense amplifier & I(O) bus Row decoder Memory array Bank 2 Row decoder Memory array Bank 3 Bank 0 Bank 1 4096 x 512 x 16 bit 4096 x 512 x16 bit Column decoder Sense , Sense amplifier & I(O) bus Row decoder Memory array Bank 1 Row decoder Memory array Bank 2 Row decoder Memory array Bank 3 Bank 0 Column decoder Sense amplifier & I(O) bus 4096 x 1024 x 8 bit	Original	PDF	V54C3128 128Mbit MSAB
1999 - VG36641641 Abstract: No abstract text available Text: · Quad Internal banks controlled by A12 & A13 ( Bank select) · Each Bank can operate simultaneously , Bank select DQM DQ mask enable DQ0 ~ DQ7 DQ0 ~ DQ15 Data - in/data - out (x8) Data - in , Data Control Circuit Rev.3 Input & Output Buffer RAS Bank A Sense Amplifier Control Logic CS Command Decoder Mode Register Bank D Bank C Bank B Row Address Buffer & , One bank active CL = 2 120 110 95 tRC tRC(MIN), Io = 0mA Precharge standby ICC2P current in	Original	PDF	VG366480 1G5-0151 VG36641641
2003 - IS42S16400A Abstract: IS42S16400A-10TI Text: · Internal bank for hiding row access/precharge ® April 2003 OVERVIEW ISSI's 64Mb Synchronous DRAM IS42S16400A is organized as 1,048,576 bits x 16-bit x 4- bank for improved performance. The , DESCRIPTIONS A0-A11 Address Input WE Write Enable BA0, BA1 Bank Select Address LDQM Lower , quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 4,096 rows by 256 , PRECHARGE function enabled. Precharge one bank while accessing one of the other three banks will hide	Original	PDF	IS42S16400A 64-MBIT) IS42S16400A 16-bit 54-Pin IS42S16400A-10TI
2003 - DDR Timing Abstract: Timing bx0 transistor Eorex Text: Interleaved Bank Read ( BL=4, CL=3 ) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 , tRRD Bank #0 Bank #1 Active Read tRRD Precharge Active cy0 cy1 cy2 cy3 bx0 bx1 bx2 bx3 Active Read Bank #2 ( Idle ) Bank #3 ( Idle ) 3 tRRD Read Precharge Active eorex DDR Timing Interleaved Bank Read ( BL=4, CL=3, Auto Precharge ) 0 1 2 3 , tDQSCK tDQSCK tDQCK tDQCK tDQSCK DQS tDQCK DQ aw0 aw1 aw2 aw3 tRRD Bank #0	Original	PDF
GLT5640L16P Abstract: mark code T18 Text: x 16 x 4 (word x bit x bank ), respectively. The synchronous DRAMs achieved high-speed data transfer , to assert random column access in every cycle · Quad internal banks controlled by BA0 & BA1 ( Bank , Mask Enable Address Input Bank Address Power Supply Power Supply for DQ Ground Ground for DQ , Bank D Bank C Bank B Row Decoder Data Control Circuit G-Link Technology Corporation,Taiwan , counter Latch Circuit CAS Control Logic RAS Command Decoder CS Bank A DQ G	Original	PDF	GLT5640L16 GLT5640L16 864-bit 183MHz. 54-pin GLT5640L16P mark code T18
6bx7 Abstract: 6ax7 9t2 transistor EM636165GD-6 EM636165 Text: refresh mode: standard and low power Internal pipelined architecture 512K word x 16-bit x 2- bank , CONTROL SIGNAL GENERATOR 2048 X 256 X 16 CELL ARRAY ( BANK #0) Sense Amplifier COLUMN COUNTER , DQ15 REFRESH COUNTER 2048 X 256 X 16 CELL ARRAY ( BANK #1) Column Decoder 2 Rev. 1.0 , , providing low standby power. A11 Input Bank Select: A11(BS) defines to which bank the BankActivate , respective bank . During a Precharge command, A10 is sampled to determine if both banks are to be precharged	Original	PDF	EM636165 16-bit cycles/64ms 6bx7 6ax7 9t2 transistor EM636165GD-6 EM636165

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16-bank Datasheets

Top Results (6)

16-bank Datasheets Context Search

2004 - Not Available

2004 - Not Available

M/AS4C16M16S

a2v28s40

sdram 1m x 4x 32

EM636165

EM636165

2004 - p2v56s

2012 - Not Available

2012 - Not Available

Multi Chip Memory

2004 - Not Available

EM639165TS-6G

AS4C16M16S-6TIN

2012 - Not Available

2003 - Not Available

2012 - AS4C16M16S

GLT51280L16

GLT5640AL16

2001 - MSAB

1999 - VG36641641

2003 - IS42S16400A

2003 - DDR Timing

GLT5640L16P

6bx7