16 BIT WORD STATIC RAM Search Results

TSOP48-P-1220-0

Abstract: TC55VBM416AFTN TC55VBM416AFTN55
Contextual Info: TC55VBM416AFTN55 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VBM416AFTN is a 16,777,216-bit static random access memory SRAM organized as 1,048,576 words

M5M54R16AJ

Contextual Info: MITSUBISHI LSIs 2001.5.18 Ver.E Notice: This is not a final specification. Some parametric limits are subject to change. M5M54R16AJ,TP-10,-12 4194304-BIT 262144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M54R16A is a family of 262144-word by 16-bit

Contextual Info: RENESAS LSIs 2003.08.21 Ver. 7.0 M5M5V416CWG -55HI, -70HI 4194304-BIT 262144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION FEATURES The M5M5V416CWG is a f amily of low v oltage 4-Mbit static RAMs organized as 262144-words by 16-bit, f abricated by Renesas's

TC55V2161FTI

Contextual Info: TO SHIBA TC55V2161 FTI-85#-10#-85L#-1OL TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC55V2161FTI is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by 16

TC55VCM416BTGN55

Abstract: TC55VCM416BSGN TC55VCM416BTGN TC55YCM416BSGN TC55VCM416BSGN55 TC55VEM416BXGN55 TSOP48-P-1220-0
Contextual Info: TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM416B, TC55VEM416B, TC55YCM416B and TC55YEM416B is a 16,777,216-bit static random

Contextual Info: HM6216255H Series 262114-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-763 Z Preliminary Rev. 0.0 Mar. 27, 1997 D e s c r ip t io n The HM6216255H Series is an asynchronous high speed static RAM organized as 256-k word x 16-bit. It has realized high speed access time by employing CMOS process and high speed circuit designing

TRANSISTOR A75

Abstract: 100-PIN
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4382162, 4382182, 4382322, 4382362 8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT Description The µPD4382162 is a 524,288-word by 16-bit, the µPD4382182 is a 524,288-word by 18-bit, µPD4382322 is a 262,144word by 32-bit and the µPD4382362 is a 262,144-word by 36-bit synchronous static RAM fabricated with advanced CMOS

Contextual Info: TC51WHM716AXBN70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,608-WORD BY 16-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51WHM716AXBN is a 134,217,728-bit pseudo static random access memory PSRAM organized as 8,388,608 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high

TC51WHM616BXGN70

Abstract: TC51WHM616BXGN
Contextual Info: TC51WHM616BXGN70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51WHM616BXGN is a 67,108,864-bit pseudo static random access memory PSRAM organized as 4,194,304 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high

uPD442012AGY-BB55X-MJH

Abstract: uPD442012AGY-BB70X-MJH uPD442012AGY-BB85X-MJH uPD442012AGY-BC70X-MJH uPD442012AGY-BC85X-MJH PD442012AGY-DD12X-MJH-A
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD442012A-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The μPD442012A-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The μPD442012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.

Contextual Info: HM621664HB Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-349 A (Z) Preliminary Rev. 0.1 Jun. 28, 1996 Description The HM621664HB is an asynchronous high speed static RAM organized as 64-kword 16-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am CMOS process and high speed circuit

Contextual Info: TOSHIBA TC554161 FTL-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5 V

Contextual Info: TO SH IBA TC551664BJ/BFT-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it

Contextual Info: TOSHIBA TC55V1664J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC55V1664J/FT is a 1,048.5,'6 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 3.3V sjpply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.

Contextual Info: TC554161FTÏ-85L/10L PRELIMINARY SILICON GATE CMOS SLindvd Static RAM TOSHIBA 262,144 WORD x 16 BIT STATIC RAM Description The T C 554161 FTI is a 4,194,304 bits static random access memory organized as 262,144 words by 16 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high_speed and low

Contextual Info: R1LV3216R Series 32Mb Advanced LPSRAM 2M word x 16bit / 4M word x 8bit REJ03C0367-0100 Rev.1.00 2009.05.07 Description The R1LV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2,097,152-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.

Contextual Info: HM62W16258B Series 4 M SRAM 256-kword x 16-bit HITACHI ADE-203-976 (Z) Preliminary, Rev. 0.0 Oct. 30, 1998 Description The Hitachi HM62W16258B Series is 4-M bit static RAM organized 262,144-word x 16-bit. HM62W16258B Series has realized higher density, higher performance and low power consumption by

Contextual Info: TOSHIBA TC554161AFT-70,-85,-10,-701-,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD B Y 16-BIT STATIC RAM DESCRIPTION The TC554161AFT is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5 V

t71c

Contextual Info: CAT71C88 CMOS STATIC RAM CATALYST CAT71C88 16K X 4-BIT HIGH SPEED CMOS STATIC RAM FEATURES GENERAL DESCRIPTION The C A T 7 1C 8 8 is a static C M O S RA M organized as a 16 ,384 word by 4 bit array. It features 5 V single power supply operation and direct T T L input/output

mitsubishi date code

Abstract: M5M5W816 M5M5W816WG
Contextual Info: 2001.4.11 MITSUBISHI LSIs Ver. 2.0 M5M5W816WG - 85HI PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change 8388608-BIT 524288-WORD BY 16-BIT CMOS STATIC RAM Those are summarized in the part name table below.

Contextual Info: TO SH IBA TC55V1664BJ/BFT-8 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s

T8E6

Abstract: TC551632 TC551632J acc20
Contextual Info: TOSHIBA T C 5 5 1 6 3 2 .1 -2 0 / 2 5 / 3 5 SILICON GATE CMOS 32,768 WORD x 16 BIT CMOS STATIC RAM Description The TC551632J is a 524,288 bit high speed CMOS static random access memory organized as 32,768 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.

M5M5V32R16

Abstract: M5M5V32R16J TP-15
Contextual Info: MITSUBISHI LSIs 1997.01.22 M5M5V32R16J,TP-10,-12,-15 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 524288-BIT 32768-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) FEATURES Fast access time

M5M532R16

Abstract: M5M532R16J TP-15
Contextual Info: MITSUBISHI LSIs 1997.01.22 M5M532R16J,TP-10,-12,-15 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 524288-BIT 32768-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) FEATURES Fast access time