16 BIT WORD STATIC RAM Search Results

MS52C182A

Contextual Info: ¡ Semiconductor MS52C182A 1998.6 Preliminary 65,536-Word X 16-Bit or 131,072-Word X 8-Bit STATIC RAM + 524,288-Word X 16-Bit or 1,048,576-Word X 8-Bit One Time PROM DESCRIPTION The MS52C182A is a 65,536 -word by 16 -bit / 131,072-word by 8-bit electrically switchable

MS52C182A

Contextual Info: ¡ Semiconductor MS52C182A 1998.6 Preliminary 65,536-Word X 16-Bit or 131,072-Word X 8-Bit STATIC RAM + 524,288-Word X 16-Bit or 1,048,576-Word X 8-Bit One Time PROM DESCRIPTION The MS52C182A is a 65,536 -word by 16 -bit / 131,072-word by 8-bit electrically switchable

Contextual Info: ¡ Semiconductor MS52C1162A 1998.6 Preliminary 65,536-Word X 16-Bit or 131,072-Word X 8-Bit STATIC RAM + 1,048,576-Word X 16-Bit or 2,097,152-Word X 8-Bit One Time PROM DESCRIPTION The MS52C1162A is a 65,536 -word by 16 -bit / 131,072-word by 8-bit electrically switchable

BC244

Abstract: M5M51016BTP A-1540 a1540 A7423
Contextual Info: 9 9 JulJul ,1997 ,1997 MITSUBISHI LSIs LSIs MITSUBISHI M5M51016BTP,RT-10VL, M5M51016BTP,RT-10VL, -10VLL -10VLL 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM

M5M51016BTP

Abstract: RT-12VL RT-12VLL
Contextual Info: 9 Jul ,1997 MITSUBISHI MITSUBISHI LSIs LSIs M5M51016BTP,RT-12VL, -12VLL 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION Power supply current M5M51016BTP,RT-12VL M5M51016BTP,RT-12VLL Access time

a1540

Abstract: M5M51016BTP RT-10VL-I
Contextual Info: 99Jul Jul,1997 ,1997 MITSUBISHI LSIs M5M51016BTP,RT-10VL-I, -10VLL-I 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION Power supply current M5M51016BTP,RT-10VL M5M51016BTP,RT-10VLL Access time (max)

M5M51016BTP

Abstract: RT-70L mitsubishi m5m510
Contextual Info: 99Jul Jul,1997 ,1997 MITSUBISHI MITSUBISHI LSIs LSIs M5M51016BTP,RT-70L,-10L, -70LL,-10LL 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION FEATURES PIN CONFIGURATION (TOP VIEW) ADDRESS INPUTS M5M51016BTP,RT-70L

TC55W800FT

Abstract: TC55W800FT-55 DSA0069634 TSOP48-P-1220-0
Contextual Info: TC55W800FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W800FT is a 8,388,608-bit static random access memory SRAM organized as 524,288 words by 16

TC55W1600FT

Abstract: TC55W1600FT-55
Contextual Info: TC55W1600FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W1600FT is a 16,777,216-bit static random access memory SRAM organized as 1,048,576 words by 16

Contextual Info: TC55W1600FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W1600FT is a 16,777,216-bit static random access memory SRAM organized as 1,048,576 words by 16

TC55W800FT

Abstract: TC55W800FT-55
Contextual Info: TC55W800FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W800FT is a 8,388,608-bit static random access memory SRAM organized as 524,288 words by 16

M5M5W817KT

Contextual Info: MITSUBISHI LSIs 2002.9.3 Ver. 0.0 M5M5W817KT - 70HI 8388608-BIT 524288-WORD BY 16-BIT / 10485776-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5W817KT is a f amily of low v oltage 8Mbit static RAMs organized as 524288-words by 16-bit / 1048576-words by 8-bit,

65536-WORD

Contextual Info: MITSUBISHI LSlS .«AVI*'' M5M51016ATP.RT-10VL,-1OVLL p H . •»oW- ,ar0 .»tal'1 > «'"' ^ " 1048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016ATP, RT are a 1048576-bit CMOS static RAM organized as 65536-word by 16-bit which are fabricated using

Contextual Info: TOSHIBA TC55W800FT-55,-70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W800FT is a 8,388,608-bit static random access memory SRAM organized as 524,288 words by 16

TC55W800FT

Abstract: TC55W800FT-55
Contextual Info: TOSHIBA TC55W800FT-55,-70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W800FT is a 8,388,608-bit static random access memory SRAM organized as 524,288 words by 16

Contextual Info: MITSUBISHI LSIs M5M51016ATP,RT-70L,-85L,-10L, -70LL,-85LL,-1 OLL 1048576-BIT 65536-WORD BY 16-BIT CM0S STATIC RAM DESCRIPTION The M5M51016ATP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16 - bit which are fabricated using high-performance triple polysilicon CMOS

Contextual Info: MITSUBISHI LSIs M5M51016ATP,RT-70L,-85L,-10L, -70LL,-85LL,-1 OLL 1048576-BIT 65536-WORD BY 16-BIT CM0S STATIC RAM DESCRIPTION The M5M51016ATP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16 - bit which are fabricated using high-performance triple polysilicon CMOS

M5M51016BTP

Abstract: RT-12VL RT-12VL-I RT-12VLL M5M51016
Contextual Info: 99 Jul Jul,1997 ,1997 MITSUBISHI MITSUBISHI LSIs LSIs M5M51016BTP,RT-12VL-I, M5M51016BTP,RT-12VL-I, -12VLL-I -12VLL-I 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION Power supply current M5M51016BTP,RT-12VL

Contextual Info: MITSUBISHI LSIs M5M51016BTP,RT-70L,-10L, -70LL,-10LL 1Q48576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of

Contextual Info: MITSUBISHI LSIs M5M564R16CJ.TP-10,-12,-15 í f at Nc*,ce » • uSume Pdid 1048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M564R16C is a family of 65536-word by 16-bit static RAMs, fabricated with the high performance CMOS process and

Contextual Info: MITSUBISHI LSIs M5M51016ATP,RT-15VL,-15VLL 1048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016ATP, RT are a 1048576-blt CMOS static RAM organized as 65536-word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of

Contextual Info: M ITSU B ISH I LSIs M5M51016BTP,RT-12VLr 12VLL 1048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536-word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of

Contextual Info: MITSUBISHI LSIs M5M51016BTP,RT-12VL,-12VLL 1048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM PIN CONFIGURATION (TOP VIEW) organized as 65536-word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of

Contextual Info: TC55VBM416AFTN55 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VBM416AFTN is a 16,777,216-bit static random access memory SRAM organized as 1,048,576 words