16 BIT WORD FLASH Search Results

Contextual Info: FEDM27V6452R-002-01 Issue Date: Aug, 21, 2012 MR27V6452R 4M-Word  16-Bit or 8M-Word  8-Bit Page mode P2ROM PIN CONFIGURATION TOP VIEW FEATURES • 4,194,304-word  16-bit/8,388,608-word  8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit

Contextual Info: MITSUBISHI LSIs M6MGB/T160S2BVP 16,777,216-BIT 1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-BIT / 262,144-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) DESCRIPTION FEATURES

Contextual Info: MITSUBISHI LSIs M6MGB/T160S4BVP 16,777,216-BIT 1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) DESCRIPTION FEATURES

52PTF

Contextual Info: Renesas LSIs M6MG3B/T641S16TP 67,108,864-BIT 4,194,304-WORD BY 16-BIT / 8,388,608-WORD BY 8-BIT CMOS FLASH MEMORY & 16,777,216-BIT (1,048,576-WORD BY 16-BIT / 2,097,152 -WORD BY 8-BIT) CMOS SRAM Stacked- µMCP (micro Multi Chip Package) DESCRIPTION The M6MG3B/T641S16TP is a Stacked micro Multi Chip

Contextual Info: Renesas LSIs M6MGB/T321S8TP 33,554,432-BIT 2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT CMOS 3.0V-ONLY FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT) CMOS SRAM Stacked - µ MCP (micro Multi Chip Package) Description M6MGB/T321S8TP provides for Software Lock Release

52-pin TSOP

Abstract: 52PTG
Contextual Info: Renesas LSIs M6MGB/T641S4TP 67,108,864-BIT 4,194,304-WORD BY 16-BIT / 8,388,608-WORD BY 8-BIT CMOS FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT / 524,288-WORD BY 8BIT) CMOS SRAM Stacked- µMCP (micro Multi Chip Package) DESCRIPTION The M6MGB/T641S4TP is a Stacked micro Multi Chip

Contextual Info: PEDR26V51253L-02-05 OKI Semiconductor MR26V51253L 32M–Word x 16–Bit or 64M–Word × 8–Bit Page Mode Issue Date: Jul. 9, 2004 Preliminary P2ROM FEATURES • 33,554,432-word × 16-bit / 67,108,864-word × 8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit

Contextual Info: PEDR27V25653L-02-07 OKI Semiconductor MR27V25653L 16M–Word x 16–Bit or 32M–Word × 8–Bit Page Mode Issue Date: Dec.28, 2004 Preliminary P2ROM FEATURES • 16,777,216-word × 16-bit / 33,554,432-word × 8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit

Contextual Info: PEDR27V25653L-02-06 OKI Semiconductor MR27V25653L 16M–Word x 16–Bit or 32M–Word × 8–Bit Page Mode Issue Date: Sep. 8, 2004 Preliminary P2ROM FEATURES • 16,777,216-word × 16-bit / 33,554,432-word × 8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit

Contextual Info: PEDR27V25653L-02-07 OKI Semiconductor MR27V25653L 16M–Word x 16–Bit or 32M–Word × 8–Bit Page Mode Issue Date: Nov.12, 2004 Preliminary P2ROM FEATURES • 16,777,216-word × 16-bit / 33,554,432-word × 8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit

Contextual Info: PEDR27V25653L-02-04 OKI Semiconductor MR27V25653L 16M–Word x 16–Bit or 32M–Word × 8–Bit Page Mode Issue Date: Jun. 8, 2004 Preliminary P2ROM FEATURES • 16,777,216-word × 16-bit / 33,554,432-word × 8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit

Contextual Info: PEDR26V51253L-02-04 OKI Semiconductor MR26V51253L 32M–Word x 16–Bit or 64M–Word × 8–Bit Page Mode Issue Date: Jun. 8, 2004 Preliminary P2ROM FEATURES • 33,554,432-word × 16-bit / 67,108,864-word × 8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit

Contextual Info: PEDR27V25653L-02-05 OKI Semiconductor MR27V25653L 16M–Word x 16–Bit or 32M–Word × 8–Bit Page Mode Issue Date: Jul. 9, 2004 Preliminary P2ROM FEATURES • 16,777,216-word × 16-bit / 33,554,432-word × 8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit

Contextual Info: PEDR27V25653L-02-02 OKI Semiconductor MR27V25653L 16M–Word x 16–Bit or 32M–Word × 8–Bit Page Mode Issue Date: Apr. 9, 2004 Preliminary P2ROM FEATURES • 16,777,216-word × 16-bit / 33,554,432-word × 8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit

Contextual Info: PEDR26V51253L-02-03 OKI Semiconductor MR26V51253L 32M–Word x 16–Bit or 64M–Word × 8–Bit Page Mode Issue Date: Apr. 27, 2004 Preliminary P2ROM FEATURES • 33,554,432-word × 16-bit / 67,108,864-word × 8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit

Contextual Info: OKI Semiconductor MR26V01G53L 64M–Word x 16–Bit or 128M–Word × 8–Bit Page Mode FEDR26V01G53L-02-01 Issue Date: Jul. 29, 2005 P2ROM FEATURES • · · · · · · · · 64M-word × 16-bit / 128M-word × 8-bit electrically switchable configuration Page size of 8-word x 16-Bit or 16-word x 8-Bit

Contextual Info: FEDM37V25652T-002-01 Issue Date: Aug. 23, 2011 MR37V25652T 16M-Word x 16-Bit or 32M-Word × 8-Bit Page mode P2ROM FEATURES • 16,777,216-word × 16-bit / 33,554,432-word × 8-bit electrically switchable configuration · 3.0V to 3.6 V power supply · Access time

Contextual Info: FEDM37V25652T-002-02 Issue Date: Nov. 12, 2012 MR37V25652T 16M-Word x 16-Bit or 32M-Word × 8-Bit Page mode P2ROM FEATURES • 16,777,216-word × 16-bit / 33,554,432-word × 8-bit electrically switchable configuration · 3.0V to 3.6 V power supply · Access time

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 16:39 µPD23C16000L 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE / 1M-WORD BY 16-BIT(WORD MODE) Description The µPD23C16000L is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE

free mobile phone circuit diagram

Abstract: mobile circuit diagram M6MGD137W34DWG MCE Semiconductor Mobile Phone Repeater repeater mobile circuit
Contextual Info: Renesas LSIs RENESAS CONFIDENTIAL M6MGD137W34DWG 134,217,728-BIT 8,388,608-WORD BY 16-BIT CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package) Description The M6MGD137W34DWG is a Stacked Chip Scale Package

D23C8000

Abstract: PD23C8000L P42C-100-600A upd23c8000
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE / 512K-WORD BY 16-BIT (WORD MODE) Description The ^¡PD23C8000L is a 8,388,608 bits mask-programmable ROM. The word organization isselectable (BYTE mode : 1,048,576 words by 8 bits, WORD mode : 524,288 words by 16 bits).

MSM5416283-60

Abstract: MSM5416283 SAM256
Contextual Info: O KI Semiconductor MSM5416283 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.

Stacked Chip Scale Package

Abstract: T166S2BWG 98000H-9FFFFH MITSUBISHI GATE ARRAY
Contextual Info: MITSUBISHI LSIs M6MGB/T166S2BWG 16,777,216-BIT 1,048,576 -WORD BY 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) DESCRIPTION FEATURES The MITSUBISHI M6MGB/T166S2BWG is a Stacked Chip

M6MGB/T166S4BWG

Abstract: M6MGT166S4
Contextual Info: MITSUBISHI LSIs M6MGB/T166S4BWG 16,777,216-BIT 1,048,576 -WORD BY 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) DESCRIPTION FEATURES The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip