BC869-16(RANGE:100-250)
|
|
JCET Group
|
PNP transistor in SOT-89-3L package, with maximum collector current of -1 A, collector-emitter voltage of -20 V, DC current gain up to 375, and transition frequency of 40 MHz. |
Original |
PDF
|
|
|
|
BC807-16(RANGE:100-250)
|
|
JCET Group
|
BC807 PNP transistor in SOT-23 package, featuring 45 V collector-emitter breakdown voltage, -500 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 600 depending on rank. |
Original |
PDF
|
|
|
|
BCX55-16(RANGE:100-250)
|
|
JCET Group
|
NPN transistor in SOT-89-3L package with collector current up to 1 A, collector-emitter voltage up to 80 V, DC current gain up to 250, and transition frequency of 130 MHz. |
Original |
PDF
|
|
|
|
BCX54-16(RANGE:100-250)
|
|
JCET Group
|
NPN transistor in SOT-89-3L package with collector current up to 1 A, collector-emitter voltage from 45 V to 80 V, DC current gain up to 250, and transition frequency of 130 MHz. |
Original |
PDF
|
|
|
|
BCP52-16(RANGE:100-250)
|
|
JCET Group
|
BCP51, BCP52, BCP53 are PNP plastic-encapsulated transistors in SOT-223 package, designed for AF driver and output stages, featuring high collector current up to 1 A, low collector-emitter saturation voltage, and complementary NPN types available. |
Original |
PDF
|
|
|
|
BCX53-16(RANGE:100-250)
|
|
JCET Group
|
PNP transistor in SOT-89-3L package, rated for -45V to -100V collector-base voltage, -1A collector current, 500mW power dissipation, with DC current gain up to 250 and transition frequency of 50MHz. |
Original |
PDF
|
|
|
|
BCX51-16(RANGE:100-250)
|
|
JCET Group
|
PNP transistor in SOT-89-3L package, part of BCX51, BCX52, BCX53 series, with collector-base voltage up to -100 V, collector current up to -1 A, DC current gain from 63 to 250, and transition frequency up to 50 MHz. |
Original |
PDF
|
|
|
BC869-16(RANGE:100-250)
