15KW IGBT 200 A 1200 V Search Results

PVD150-12

Abstract: dc 3phase ac inverter circuit 15KW 15KW igbt 200 A 1200 V thyristor 15KW thyristor inverter
Contextual Info: TENTATIVE PIM MODULE PVD150PVD150-12 15KW 400V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 15kw 400V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage

SOT-227 lead frame

Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
Contextual Info: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic

PDM5001

Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Contextual Info: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH

TLP250 MOSFET DRIVER application note

Abstract: TLP250 MOSFET DRIVER calculation of IGBT snubber 74hc06 tlp250 equivalent TLP250 igbt driver applications TLP250 application note difference between IGBT and MOSFET IN inverter SCR 207A scr driver ic for rectifier 3 phase
Contextual Info: CONTENTS POWER DEVICES and IGBT 2 Variation of NIEC’s IGBT Modules 4 Ratings and Characteristics 6 Power Loss and Thermal Design 10 Gate Drive 20 High Side Drive 24 3-Phase Bridge Inverter 26 Short circuit and Over-voltage Protection 30 Snubber 33 Parallel Operation

PM75RSE120

Abstract: snubber capacitor
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75RSE120 PM75RSE120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75RSE120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

3rd Generation of 1200V IGBT Modules

Abstract: PM75RSD120
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75RSD120 PM75RSD120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75RSD120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

PM75CSE120

Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75CSE120 PM75CSE120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CSE120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75RSE120 PM75RSE120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75RSE120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

PM75RSE120

Abstract: E80276
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75RSE120 PM75RSE120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75RSE120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

E80276

Abstract: PM75RLA120
Contextual Info: 三菱半導体〈インテリジェントパワーモジュール〉 PM75RLA120 フラットベース形 絶縁形 PM75RLA120 特長 ➀ 第 5 世代 1µm ルール IGBT（CSTBT）チッ プ採用 Vce sat (@Tj=125℃)=typ.1.9V ➁ CSTBTチップのTj検出による過熱保護を

PM75RLB120

Abstract: E80276
Contextual Info: 三菱半導体〈インテリジェントパワーモジュール〉 PM75RLB120 フラットベース形 絶縁形 PM75RLB120 特長 ➀ 第 5 世代 1µm ルール IGBT（CSTBT）チッ プ採用 Vce sat (@Tj=125℃)=typ.1.9V ➁ CSTBTチップのTj検出による過熱保護を

PM75CSD120

Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75CSD120 PM75CSD120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CSD120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75RSD120 PM75RSD120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75RSD120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

PM75RSD120

Abstract: E80276
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75RSD120 PM75RSD120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75RSD120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

PM75CSE120

Abstract: E80276
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75CSE120 PM75CSE120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CSE120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

DIN 72 585

Abstract: dh24d1 teledyne relay sth24d25
Contextual Info: Switching Solutions Teledyne Relays has been providing industrial power solid-state relays for over 40 years. The company offers a broad range of products, from standard off-the-shelf single-, dual-, three- and quad-output relays to custom products with diagnostics and phase monitoring. These

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

95A sensor hall

Abstract: celduc d31c2110 d31c2110 sensor hall 95A HALL 95A D41A3100L 95A magnetic sensor IGBT ac switch in SSR swt kw 11 7 1 16a 250vac ac SYNCHRONOUS MOTOR WIRING
Contextual Info: Selection Guide REED RELAYS AND SWITCHES MAGNETIC SENSORS SOLID STATE RELAYS IV E ED We are pleased to present the third version of our short form catalogue. The last 3 years have seen a dramatic growth in customers in a diverse range of industries, allowing us to demonstrate high quality, innovative design techniques incorporated in many of the new products shown in this catalogue.

PM75CLA120

Abstract: E80276 PM75CLA
Contextual Info: 三菱半導体〈インテリジェントパワーモジュール〉 PM75CLA120 フラットベース形 絶縁形 PM75CLA120 特長 ➀ 第 5 世代 1µm ルール IGBT（CSTBT）チッ プ採用 Vce sat (@Tj=125℃)=typ.1.9V ➁ CSTBTチップのTj検出による過熱保護を

Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75CSD120 PM75CSD120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CSD120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

pm75csd120

Abstract: resistores E80276 PM75C
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75CSD120 PM75CSD120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CSD120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

CF 775

Abstract: E80276 PM75CLB120
Contextual Info: 三菱半導体〈インテリジェントパワーモジュール〉 PM75CLB120 フラットベース形 絶縁形 PM75CLB120 特長 ➀ 第 5 世代 1µm ルール IGBT（CSTBT）チッ プ採用 Vce sat (@Tj=125℃)=typ.1.9V ➁ CSTBTチップのTj検出による過熱保護を

74hc06

Abstract: TLP250 IGBT 10KHz IR2171 ptmb50e6c igbt rcd SCR 207A 50A 1200V SCR SCR 100A 1200V Equivalent for SCR 207A
Contextual Info: 目录 各种功率半导体器件和IGBT IGBT模块电路构成 IGBT模块的额定值和特性 IGBT模块的损耗和散热设计 IGBT模块的门极驱动 上桥臂的驱动 3相供电VVVF变频器系统框图 IGBT元件的短路和过电压保护 IGBT元件的过电压保护缓冲电路

PM75RSE120

Abstract: E80276
Contextual Info: 三菱半導体〈インテリジェントパワーモジュール〉 PM75RSE120 フラットベース形 絶縁形 PM75RSE120 特長 ➀第4世代 リファイン1µmルール プレーナ IGBT チップ採用 ➁ 新設計 FWDi 採用 ダイオードリカバリー特性改善