15KW IGBT Search Results

PVD150-12

Abstract: dc 3phase ac inverter circuit 15KW 15KW igbt 200 A 1200 V thyristor 15KW thyristor inverter
Contextual Info: TENTATIVE PIM MODULE PVD150PVD150-12 15KW 400V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 15kw 400V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage

Gate Turn-off Thyristor 600V 20A

Abstract: INVERTER 50 kW thyristor inverter igbt 500V 15A igbt 500V 1A ac Inverter 10 kw 15KW PVD150-6 snubber thyristor thyristor 15KW
Contextual Info: TENTATIVE PIM MODULE PVD150PVD150-6 15KW 200V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 15kw 200V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage

SKIIP 32 nab 12 t 49

Abstract: SKiiP 83 AC 12 i t 1 skiip 31 nab 12 t 49 semikron skiip 32 nab 12 Semikron skiip 31 nab 12 semikron skiip 20 nab 12 I T 38 semikron skiip 24 nab 125 t 12 Semikron skiip 22 nab SEMIKRON SKIIP 20 NAB 12 T 17 Semikron skiip 22 neb 063
Contextual Info: MiniSKiiP Do it your way MiniSKiiP Technologie • Druckkontaktverbindungen aller Leistungs- und Steueranschlüsse statt gelöteter Kontaktierungen. ■ Integration neuester Chiptechnologie • schaltverlustarme, 600V oder 1200V, homogene NPT IGBTs mit antiparalleler

SKIIP 32 nab 12 t 49

Abstract: SKiiP 33 NEC 125 To skiip 33 ups 063 semikron skiip 24 nab 125 t 12 thyristor firing circuit SEMIKRON SKIIP 20 NAB 12 T 17 semikron skiip 20 nab 12 I T 38 Semikron skiip 31 nab 12 semikron skiip 81 AN 15 T semikron skiip 32 nab 12
Contextual Info: MiniSKiiP Do it your way MiniSKiiP Technology • Pressure contact of all power and auxiliary connections instead of soldered joints. ■ Integration of latest chip technology: • Low switching loss, 600V or 1200V, homogeneous NPT IGBTs with antiparallel

SOT-227 lead frame

Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
Contextual Info: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic

Contextual Info: Elgar ETS TerraSAS 1kW-1MW 60 V Standalone TerraSAS Photovoltaic Simulator • Low output capacitance 115 • High bandwidth up to 800Hz • High resolution I-V curve simulates static and dynamic conditions 208 400 480 • Designed for high speed Maximum Power Point

PM75CVA120

Abstract: E80276
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75CVA120 PM75CVA120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CVA120 FEATURE • 3φ 75A, 1200V Current-sense IGBT for 20kHz switching • Monolithic gate drive & protection logic

E80276

Abstract: PM150CVA060 SCREW TERMINAL BLOCK
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM150CVA060 PM150CVA060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM150CVA060 FEATURE • 3φ 150A, 600V Current-sense IGBT for 20kHz switching • Monolithic gate drive & protection logic

E80276

Abstract: PM150CVA060
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM150CVA060 PM150CVA060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM150CVA060 FEATURE • 3φ 150A, 600V Current-sense IGBT for 20kHz switching • Monolithic gate drive & protection logic

transistor ac51

Abstract: 8 PIN RELAY 24V dc pla MOSFET 1200v 30a 5.1 home theatre assembling SMCV6110 RC snubber thyristor design IGBT ac switch in SSR SKB 7 / 12 PLA relay SMCV6150
Contextual Info: Solid state relays celdu ¤ cr elais Scope Heating Plasturgy Furnaces Power supply distribution systems Air conditioning Textile Home heating Infrared heating Drying Thermoforming Etc. Motor starting Pumps Compressors Plasturgy see above Conveyors Fans

Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75CVA120 PM75CVA120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CVA120 FEATURE • 3φ 75A, 1200V Current-sense IGBT for 20kHz switching • Monolithic gate drive & protection logic

E80276

Abstract: PM75CVA120
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75CVA120 PM75CVA120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CVA120 FEATURE • 3φ 75A, 1200V Current-sense IGBT for 20kHz switching • Monolithic gate drive & protection logic

PM400DV1A060

Abstract: pm300DV1A120 PM200DV1A120 PM600DV1A060 15KW motor igbt v1 sc 90 servo IGBT MOTOR CONTROL 15KW igbt 600V1200V
Contextual Info: Product Information “V1 Series” to Lineup of High Output Intelligent Power Modules PM400DV1A060/PM600DV1A060 PM200DV1A120/PM300DV1A120 PM450DV1A120 -Featuring low power loss and a compact package for motor control systems

mitsubishi semiconductors type pm75cla120

Abstract: PM75CLA120 375A1200V
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM75CLA120 FLAT-BASE TYPE INSULATED PACKAGE PM75CLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

PM150CBS060

Abstract: igbt module testing
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM150CBS060 PM150CBS060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM150CBS060 FEATURE a Adopting 4th generation IGBT chip, which performance is improved by 1µm fine rule process.

PM150CLB060

Abstract: optocoupler fast
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM150CLB060 FLAT-BASE TYPE INSULATED PACKAGE PM150CLB060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM150CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM150CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM150CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM150CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM75CLB120 FLAT-BASE TYPE INSULATED PACKAGE PM75CLB120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

11KW 3 phase electric motor

Abstract: 11KW motor PM75CLB120
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM75CLB120 FLAT-BASE TYPE INSULATED PACKAGE PM75CLB120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

PM75CSD120

Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75CSD120 PM75CSD120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CSD120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM75CLA120 FLAT-BASE TYPE INSULATED PACKAGE PM75CLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM75CLB120 FLAT-BASE TYPE INSULATED PACKAGE PM75CLB120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

PM150CLA060

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM150CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM150CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C