15MPA Search Results

15MPA0566

Abstract: 84-1LMI
Contextual Info: 11.0-19.0 GHz GaAs MMIC Power Amplifier 15MPA0566 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

transistor smd qe

Abstract: 15MPA0566-QE
Contextual Info: 11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN 15MPA0566-QE August 2006 - Rev 22-Aug-06 Features 17.0 dB Small Signal Gain +27.0 dBm Saturated Output Power SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing Chip Device Layout General Description

OC 74 germanium transistor

Abstract: P1020 15MPA0566 DM6030HK TS3332LD XP1020-BD XP1020-BD-000V power transistor gaas
Contextual Info: 11.0-19.0 GHz GaAs MMIC Power Amplifier P1020-BD January 2007 - Rev 30-Jan-07 Features Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010

transistor smd qe

Abstract: P1020 15MPA0566 CMM1118-QT XP1020-QE XP1020-QE-0N00 XP1020-QE-EV1 XU1005-QD
Contextual Info: 11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN P1020-QE January 2007 - Rev 26-Jan-07 Features 17.0 dB Small Signal Gain +27.0 dBm Saturated Output Power SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband’s two stage 11.0-19.0 GHz GaAs

Contextual Info: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2009 - Rev 29-Jan-09 Features 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power +48.0 dBm Output Third Order Intercept

ISE70-F02-65

Abstract: ZSE40F-01-22L str 12006 ISE40-01-62 ZSE30-01-65-L ISE40-01-62L ISE40-01-22L ISE30-01-65-L ISE30-01-28 ISE70-F02-43
Contextual Info: EMC-L1-Sensor A -UK Advanced Sensors For Accurate Effective Control SMC Pressure & & Flow sensors SMC Pressure Flow sensors ZSE/ISE Series -Pressure Switch PSE Series -Pressure Sensors PF2 Series -Flow Sensors Why use Digital Pressure and Flow Sensors? Digital Sensors have excellent visibility even

BD 669

Abstract: transistor BD 140 BD 149 transistor XB1008-BD XB1008-BD-000V XB1008-BD-EV1 DM6030HK TS3332LD
Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD September 2007 - Rev 17-Sep-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure Variable Gain with Adjustable Bias

"4-20mA" ic

Abstract: ZL102 4-20ma hart ic
Contextual Info: BFP01 压力变送器 概述： 概述 压力变送器采用了具有世界先进水平的硅传感器技术，微细加工成的硅膜片技术以及不锈钢膜片 技术，激光微调的温度补尝电阻技术，电路采用了专用集成电路，变送器的体积小，结构简单，可

SCL 8018

Abstract: DM6030HK TS3332LD XB1008-BD XB1008-BD-000V XB1008-BD-EV1 transistor 7809
Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD March 2007 - Rev 06-Mar-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing

XP1057-BD

Abstract: DM6030HK XP1057
Contextual Info: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2010 - Rev 04-Jan-10 Features Chip Device Layout 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power +48.0 dBm Output Third Order Intercept

DM6030HK

Abstract: TS3332LD XB1008-BD XB1008-BD-000V XB1008-BD-EV1
Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD October 2009 - Rev 10-Oct-09 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure Variable Gain with Adjustable Bias

CY-YD-200A

Contextual Info: SINOCERA CY-YD-200A 水冷式石英压力传感器 特点： ‹ 水冷型 ‹ 汽缸管道压力测量 ‹ 可静态标定 ‹ M14x1.25 标准安装螺纹 示意图 OUT 技术指标： ～20PC/105Pa 0～15MPa 150% ＜1%FS ＜1%FS ＜1%FS ＞1013Ω 7Pf 37

Contextual Info: TECHNICAL DATA SHEET Document number: TTDS-017 D-SCE heat-shrinkable sleeves Issue: 5 Date: November 2011 MATERIAL DESCRIPTION: Thin wall, thermally-stabilised radiation cross-linked polyolefin heat-shrinkable tubing, assembled as organized cut sleeves in a “ladder” configuration.

14522

Abstract: DM6030HK
Contextual Info: 14.5-16.0 GHz GaAs MMIC Power Amplifier P1058-BD August 2010 - Rev 26-Aug-10 Features Chip Device Layout 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +38.0 dBm Pulsed Saturated Output Power +46.0 dBm Output Third Order Intercept

Contextual Info: 14.5-16.0 GHz GaAs MMIC Power Amplifier P1058-BD February 2009 - Rev 02-Feb-09 Features 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power +38.0 dBm Pulsed Saturated Output Power

XP1070-BD

Abstract: P1070-BD MMIC 5043 DM6030HK 10W Power Amplifier XP1070 OC 140 germanium transistor
Contextual Info: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD January 2010 - Rev 04-Jan-10 Features Chip Device Layout 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +38.5 dBm P1dB Compression Point +40.0 dBm Pulsed Saturated Output Power +46.0 dBm Output Third Order Intercept

Contextual Info: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD March 2009 - Rev 07-Mar-09 Features Chip Device Layout 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power +48.0 dBm Output Third Order Intercept

tanaka TS3332LD

Abstract: DM6030HK TS3332LD XB1008-BD XB1008-BD-000V XB1008-BD-EV1
Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD November 2010 - Rev 11-Nov-10 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure Variable Gain with Adjustable Bias

ISO1179

Abstract: ISO1179-1 ISE75H ISE75 ISE70 axion
Contextual Info: CAT.ES100-52 A -UK 2-colour Display Type Digital Pressure Switch Rated Pressure For General Fluids Series ISE70/75/75H Die-cast aluminum 10MPa •15MPa 1MPa 2-colour (ISE75) For Air Metal Body Type (ISE75H) (ISE70) IP67 digital 2-colour Display (green and red)

XB1008-BD

Abstract: XB1008-BD-000V XB1008-BD-EV1
Contextual Info: XB1008-BD Buffer Amplifier 10.0-21.0 GHz Rev. V1 Features Chip Device Layout •        Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure Variable Gain with Adjustable Bias

Contextual Info: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD April 2009 - Rev 18-Apr-09 Features 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power +48.0 dBm Output Third Order Intercept

GB3836

Abstract: 15Mpa cd266
Contextual Info: LUGB 型涡街流量传感器变送器 类型：流量传感器、变送器 工作原理 利用柱状阻力体在流体下游方向交替产生的旋涡，在柱体两侧产生旋涡时，传感器受 到与流向垂直的交变升力的作用感生信号，升力的变化频率就是旋涡频率，传感器将信号

Contextual Info: 11.0-19.0 GHz GaAs MMIC Power Amplifier P1020-BD January 2007 - Rev 30-Jan-07 Features Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010

XP1071-BD-EV1

Contextual Info: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1071-BD March 2009 - Rev 06-Mar-09 Features Chip Device Layout 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power +38.0 dBm Pulsed Saturated Output Power