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    2012 - 0426m

    Abstract: No abstract text available
    Text: Protection Diode RoHS compliant, Pb free, Halogen free 1.5~3.6V 3.5mA@ VDD=2.85V 1.8mA@ VDD=1.8V 0.65dB@ f= 1575MHz , VDD=2.85V 21.0dB@ f= 1575MHz , VDD=2.85V -2.0dBm@ f= 1575MHz , VDD=2.85V EPFFP4-X2 (Package size: 0.65mm x , CHARACTERISTICS) VDD=2.85V, freq= 1575MHz , Ta =+25°C, ZS=Zl=50 ohm, with application circuit PARAMETERS Small , CHARACTERISTICS 3 (RF CHARACTERISTICS) VDD=1.8V, freq= 1575MHz , Ta=+25°C, ZS=Zl=50 ohm, with application circuit , =25°C, Zs=Zl=50 ohm, with application circuit Pout vs. Pin (VDD=2.85V, fRF= 1575MHz ) 20 15 10 24 Gain, I DD


    Original     		PDF NJG1144UX2 NJG1144UX2 0426m
    2010 - 1575-24

    Abstract: BPF640 bfp640f Texas Instruments 4100 GPS BFP640FESD gsm mobile jammer mobile jammer mobile signal jammer AN194 BPF640FESD
    Text: BFP640FESD LNA BFP640FESD for GPS 1575MHz A pplication A pplication Note AN194 Revision: Rev , health of the user or other persons may be endangered. BFP640FESD LNA BFP640FESD for GPS 1575MHz , 2010-03-09 Application Note AN194 LNA BFP640FESD for GPS 1575MHz Application TIntroduction Table of , .9 Power Gain of the BFP640FESD for GPS 1575MHz Noise Figure of the BFP640FESD for GPS 1575MHz Application


    Original     		PDF BFP640FESD BFP640FESD 1575MHz AN194 proper2010-03-09 1575MHz 1575-24 BPF640 bfp640f Texas Instruments 4100 GPS gsm mobile jammer mobile jammer mobile signal jammer AN194 BPF640FESD
    OB122

    Abstract: No abstract text available
    Text: . @VDD=1.8/ 2.8V, VCTL=0V (Stand-by mode) 17.5/18.5dB typ. @VDD=1.8/ 2.8V, VCTL=1.8V, f= 1575MHz , 1597~1606MHz 1.65/1.60dB typ. @VDD=1.8/ 2.8V, VCTL=1.8V, f= 1575MHz 1.75/1.70dB typ. @VDD=1.8/ 2.8V, VCTL=1.8V, f=1597~1606MHz @VDD=1.8/ 2.8V, VCTL=1.8V, 85dBc typ. f=704~915MHz, relative to 1575MHz 75dBc typ. f=1710~1980MHz, relative to 1575MHz HFFP10-CD: 2.5mmx2.5mmx0.63mm max. I PIN CONFIGURATION (Top , : VDD=2.8V, VCTL=1.8V, fRF= 1575MHz , 1597~1606MHz, Ta=+25°C, Zs=Zl=50Ω , with application circuit


    Original     		PDF NJG1157PCD NJG1157PCD HFFP10-CD OB122
    2010 - Not Available

    Abstract: No abstract text available
    Text: . @VDD=2.85V, VCTL=0V, Stand-by mode " High gain 20.0dB typ. @VDD=2.85V, VCTL=1.8V, f= 1575MHz " Low noise figure 0.70dB typ. @VDD=2.85V, VCTL=1.8V, f= 1575MHz " Input power at 1dB gain compression point -16.5dBm typ. @VDD=2.85V, VCTL=1.8V, f= 1575MHz " High input IP3 -2.0dBm typ. @VDD=2.85V, VCTL=1.8V, f , ) Pout vs. Pin 10 5 0 (VDD=2.85V, VCTL=1.8V, fRF= 1575MHz ) 24 22 20 Gain, IDD vs. Pin (VDD=2.85V, VCTL=1.8V, fRF= 1575MHz ) 10 9 8 Gain Pout (dBm) Gain (dB) Pout -5 -10 -15 -20 -25 -40 P


    Original     		PDF NJG1143UA2 NJG1143UA2
    Not Available

    Abstract: No abstract text available
    Text: =501 C, Pout vs. Pin 10 Gain, IDD vs. Pin (VDD=2.8V, VCTL=1.8V, fRF= 1575MHz ) (VDD=2.8V, VCTL=1.8V, fRF= 1575MHz ) 22 20 5 10 9 Gain P-1dB(OUT)=+4.9dBm Gain (dB) Pout (dBm) -5 , =1.8V, f1= 1575MHz , f2=1576MHz) 20 -10 20 OIP3=+17.3dBm 0 -20 Pout, IM3 (dBm) Pout, IM3 , : VDD=2.8V, VCTL=1.8V, fRF= 1575MHz , Zs=Zl=501 Gain, NF vs. Temperature 6 Gain Gain (dB) 20 , 0 100 Out-of-band IIP3 vs. Temperature (VDD=2.8V, VCTL=1.8V, f1= 1575MHz , f2=1576MHz, Pin


    Original     		PDF NJG1155UX2 NJG1155UX2 699mg
    2010 - 346A

    Abstract: Agilent IC 346A Noise Source NJG1144KA1
    Text: . @ VDD=1.8V 21.0dB typ. @ f= 1575MHz , VDD=2.85V 0.65dB typ. @ f= 1575MHz , VDD=2.85V -2.0dBm typ. @ f= 1575MHz , =50 ohm, with application circuit.) Pout vs. Pin Gain, IDD vs. Pin (VDD=2.85V, fRF= 1575MHz ) (VDD=2.85V, fRF= 1575MHz ) 15 10 24 Gain 20 Gain (dB) Pout (dBm) 5 0 -5 Pout -10 9 8 , =2.85V, f1= 1575MHz , f2=f1+100kHz) (VDD=2.85V, f1=1550~1600MHz, f2=f1+100kHz, Pin=-34dBm) 8 24 20 6 , =50 ohm, with application circuit.) P-1dB(IN) vs. Temperature Gain, NF vs Temperature (VDD=2.85V, f= 1575MHz


    Original     		PDF NJG1144KA1 NJG1144KA1 346A Agilent IC 346A Noise Source
    Not Available

    Abstract: No abstract text available
    Text: , VCTL=0V (Stand-by mode) @VDD=1.8/ 2.8V, VCTL=1.8V, f= 1575MHz @VDD=1.8/ 2.8V, VCTL=1.8V, f= 1575MHz @VDD=1.8/ 2.8V, VCTL=1.8V, 85dBc typ. f=704~915MHz, relative to 1575MHz 75dBc typ. f=1710~1980MHz, relative to 1575MHz 78dBc typ. f=1526~1536MHz, 1627~1680MHz, relative to 1575MHz HFFP10-CD , =1.8V NJG1156PCD I ELECTRICAL CHARACTERISTICS 2 (RF) General conditions: VDD=2.8V, VCTL=1.8V, fRF= 1575MHz , Ta , TYP MAX UNITS Gain1 f= 1575MHz , Exclude PCB, Connector Losses (0.19dB) 17.3 18.5


    Original     		PDF NJG1156PCD NJG1156PCD HFFP10-CD
    2013 - Not Available

    Abstract: No abstract text available
    Text: =2.85V 1.8mA typ. @ VDD=1.8V 21.0dB typ. @ f= 1575MHz , VDD=2.85V 0.65dB typ. @ f= 1575MHz , VDD=2.85V -2.0dBm typ. @ f= 1575MHz , VDD=2.85V FLP6-A1 (package size: 1.6mm x 1.6mm x 0.55mm typ.) (Top View) 4 , (Conditions: Ta=+25°C, VDD=2.85V, Zs=Zl=50 ohm, with application circuit.) Pout vs. Pin (VDD=2.85V, fRF= 1575MHz ) 15 10 5 24 Gain, IDD vs. Pin (VDD=2.85V, fRF= 1575MHz ) 10 Gain 22 20 9 8 Pout (dBm) Gain , (VDD=2.85V, f1= 1575MHz , f2=f1+100kHz) 20 OIP3, IIP3 vs. frequency (VDD=2.85V, f1=1550~1600MHz


    Original     		PDF NJG1144KA1 NJG1144KA1
    Power AMP P1dB 35dBm

    Abstract: NJG1130KA1 HK1005
    Text: =50ohm) Gain, IDD vs. Pin Pout vs. Pin (f= 1575MHz ) (f= 1575MHz ) 25 30 20 Gain 25 Gain , , f2=f1+100kHz, Pin=-35dBm) (f1= 1575MHz , f2=f1+100kHz) 40 -20 -8 17 OIP3=+15.4dBm -9 , =50ohm) Gain, NF vs. VDD P-1dB(OUT) vs. VDD (f= 1575MHz ) 3.5 14.0 30 3.0 29 2.5 Gain (dB) 28 Gain 2.0 1.5 27 26 NF 1.0 P-1dB(OUT) (dBm) 31 (f= 1575MHz ) 15.0 , , IIP3 vs. VDD VSWRi, VSWRo vs. VDD (f1= 1575MHz , f2=f1+100kHz, Pin=-35dBm) (f= 1575MHz ) -2


    Original     		PDF NJG1130KA1 NJG1130KA1 575GHz 5751GHz, -35dBm Power AMP P1dB 35dBm HK1005
    2009 - NJG1108HA8

    Abstract: NJG1108
    Text: =2.7V, VCTL=1.85V, fRF= 1575MHz , Ta=+25°C, Zs=Zl=50ohm, with application circuit PARAMETERS SYMBOL , ELECTRICAL CHARACTERISTICS (Conditions: VDD=VINV=2.7V, VCTL=1.85V, fRF= 1575MHz , Ta=+25°C, Zs=Zl=50ohm, with , ) Pout (dBm) (fRF= 1575MHz ) 24 -5 -10 Gain 6 5 18 16 4 IDD P-1dB(IN , (mA) (fRF= 1575MHz ) 10 1 P-1dB(IN)=-15.0dBm 0 -30 -20 Pin (dBm) -10 0 10 , CHARACTERISTICS (Conditions: VDD=VINV=2.7V, VCTL=1.85V, fRF= 1575MHz , Ta=+25°C, Zs=Zl=50ohm, with application


    Original     		PDF NJG1108HA8 NJG1108HA8 NJG1108
    2013 - IIP31

    Abstract: 1575M
    Text: RoHS compliant, Pb free, Halogen free 1.5~3.6V 3.5mA@ VDD=2.85V 1.8mA@ VDD=1.8V 0.65dB@ f= 1575MHz , VDD=2.85V 21.0dB@ f= 1575MHz , VDD=2.85V -2.0dBm@ f= 1575MHz , VDD=2.85V EPFFP4-X2 (Package size: 0.65mm x , CHARACTERISTICS) VDD=2.85V, freq= 1575MHz , Ta =+25°C, ZS=Zl=50 ohm, with application circuit PARAMETERS Small , CHARACTERISTICS 3 (RF CHARACTERISTICS) VDD=1.8V, freq= 1575MHz , Ta=+25°C, ZS=Zl=50 ohm, with application circuit , =25°C, Zs=Zl=50 ohm, with application circuit Pout vs. Pin (VDD=2.85V, fRF= 1575MHz ) 20 15 10 Gain, I DD vs


    Original     		PDF NJG1144UX2 NJG1144UX2 IIP31 1575M
    2013 - Not Available

    Abstract: No abstract text available
    Text: @ f= 1575MHz , VDD=2.85V 21.0dB@ f= 1575MHz , VDD=2.85V -2.0dBm@ f= 1575MHz , VDD=2.85V EPFFP4-X2 , (RF CHARACTERISTICS) VDD=2.85V, freq= 1575MHz , Ta =+25°C, Z S=Zl=50 ohm, with application circuit , =1.8V, freq= 1575MHz , Ta=+25°C, Z S=Zl=50 ohm, with application circuit PARAMETERS Small signal gain2 Noise , =2.85V, fRF= 1575MHz ) (VDD=2.85V, fRF= 1575MHz ) 24 20 10 Gain 20 8 5 18 7 16 6 , 4 18 2 16 0 14 IIP3 -2 IIP3 (dBm) (VDD=2.85V, f1= 1575MHz , f2=f1


    Original     		PDF NJG1144UX2 NJG1144UX2
    2013 - NJG1108HA8

    Abstract: No abstract text available
    Text: NJG1108HA8 IELECTRICAL CHARACTERISTICS 2 (Active Mode) GENERAL CONDITIONS: VDD=VINV=2.7V, VCTL=1.85V, fRF= 1575MHz , NJG1108HA8 I ELECTRICAL CHARACTERISTICS (Conditions: VDD=VINV=2.7V, VCTL=1.85V, fRF= 1575MHz , Ta=+25°C, Zs=Zl=50ohm, with application circuit) Pout vs. Pin 10 5 0 (fRF= 1575MHz ) 24 22 20 Gain, IDD vs. Pin (fRF= 1575MHz , NJG1108HA8 I ELECTRICAL CHARACTERISTICS (Conditions: VDD=VINV=2.7V, VCTL=1.85V, fRF= 1575MHz , Ta=+25°C, Zs=Zl=50ohm, with application circuit) Gain, NF vs. VDD, VINV 24 22 20 (fRF= 1575MHz ) 4 3.5 -8 -10 P-1dB(IN


    Original     		PDF NJG1108HA8 NJG1108HA8
    2011 - GLONASS L2

    Abstract: No abstract text available
    Text: 3.5mA typ. @ VDD=2.85V 1.8mA typ. @ VDD=1.8V 21.0dB typ. @ f= 1575MHz , VDD=2.85V 0.65dB typ. @ f= 1575MHz , VDD=2.85V -2.0dBm typ. @ f= 1575MHz , VDD=2.85V FLP6-A1 (package size: 1.6mm x 1.6mm x 0.55mm typ , -2- NJG1144KA1 I ELECTRICAL CHARACTERISTICS 2 (RF) (General conditions: VDD=2.85V, freq= 1575MHz , 2.0 UNIT dB dB dBm dBm I ELECTRICAL CHARACTERISTICS 3 (RF) (General conditions: VDD=1.8V, freq= 1575MHz , (Conditions: Ta=+25°C, VDD=2.85V, Zs=Zl=50 ohm, with application circuit.) Pout vs. Pin (VDD=2.85V, fRF= 1575MHz


    Original     		PDF NJG1144KA1 NJG1144KA1 GLONASS L2
    2013 - Not Available

    Abstract: No abstract text available
    Text: ) Pout vs. Pin 25 20 15 P-1dBout=+12.0dBm 25 Gain, IDD vs. Pin (f= 1575MHz ) 30 40 (f= 1575MHz , , IM3 vs. Pin 40 (f1= 1575MHz , f2=f1+100kHz) 17 16 OIP3, IIP3 vs. frequency (f1=1550~1600MHz, f2=f1 , CHARACTERISTICS (Condition :Ta=+25,Zs=Zl=50ohm with application circuit) Gain, NF vs. VDD 32 31 30 (f= 1575MHz ) 4.0 3.5 3.0 2.5 Gain 2.0 1.5 1.0 0.5 0.0 3.4 P-1dB(OUT) vs. VDD 15.0 14.0 (f= 1575MHz ) P-1dB(OUT , vs. VDD 20 18 16 OIP3 (f1= 1575MHz , f2=f1+100kHz, Pin=-35dBm) -2 -4 -6 -8 -10 -12 IIP3 8 6 4 2.4 -14


    Original     		PDF NJG1130KA1 NJG1130KA1
    NJG1117HA8

    Abstract: MLK0603
    Text: -1dB IP3 NJG1117HA8 +2.7V typ. 3.0mA typ. 19.5dB typ. @ fRF= 1575MHz 0.7dB typ. @ fRF= 1575MHz -16.5dBm typ. @ fRF= 1575MHz -2.0dBm typ. @ fRF= 1575MHz+1575.1MHz USB6-A8Package size: 1mm x 1.2mm x , =150°C : VDD=2.7V, fRF= 1575MHz , Ta=+25°C, Zs=Zl=50 ohm, fRF 1.57 1.575 , Ta=+25°C, VDD=2.7V, Zs=Zl=50 ohm, Pout vs. Pin Gain, IDD vs. Pin (VDD=2.7V, fRF= 1575MHz , ) (VDD=2.7V, fRF= 1575MHz ) 24 NJG1117HA8 Ta=+25°C, VDD=2.7V, Zs=Zl=50 ohm, Gain, NF vs


    Original     		PDF NJG1117HA8 NJG1117HA8 1575MHz 1575MHz 400kHz 100Hz MLK0603
    2009 - BFP460

    Abstract: TR153 BFP620 P460 P46 transistor
    Text: TR153 LNA using BFP460 for GPS 1575MHz Application TR153 Revision History: 9 September 2009 , Report TR153 LNA using BFP460 for GPS 1575MHz Application 1 Overview Device : BFP460 Application: LNA using BFP460 for GPS 1575MHz Application PCB Marking: BFP620 V1.0 2 Summary of , dBm Measured@ 1575MHz Output P1dB OP1dB -0.6 dBm Input IP3 IIP3 5.1 dBm , 10GHz 9 September 2009 Technical Report TR153 LNA using BFP460 for GPS 1575MHz Application 3


    Original     		PDF BFP460 1575MHz TR153 TR153 BFP620 P460 P46 transistor
    NJG1144KA1

    Abstract: 8975A
    Text: FLP6-A1 NJG1144KA1 1.5V~3.6 V 3.5 mA @VDD=2.85V 1.8 mA @VDD=1.8V 0.65 dB @ f= 1575MHzVDD =2.85V 21.0 dB @ f= 1575MHzVDD =2.85V IIP3 -2.0 dBm @ f= 1575MHzVDD =2.85V FLP6-A11.6mm x 1.6mm , °C Tstg -55~+150 °C 1 (DC ) : VDD=2.85V, freq= 1575MHz , Ta=+25°C, Zs=Zl , 2 RF OFFVDD=1.8V - 1.8 3.2 mA -2- NJG1144KA1 2 (RF ) : VDD=2.85V, freq= 1575MHz , 2.0 RF OUT VSWR1 VSWRo1 - 1.5 2.0 3 (RF ) : VDD=1.8V, freq= 1575MHz , Ta


    Original     		PDF NJG1144KA1 NJG1144KA1 1575MHzVDD FLP6-A11 8975A
    2014 - Not Available

    Abstract: No abstract text available
    Text: =2.85V 1.8mA typ. @ VDD=1.8V 21.0dB typ. @ f= 1575MHz , VDD=2.85V 0.65dB typ. @ f= 1575MHz , VDD=2.85V -2.0dBm typ. @ f= 1575MHz , VDD=2.85V FLP6-A1 (package size: 1.6mm x 1.6mm x 0.55mm typ.) I PIN , =2.85V, fRF= 1575MHz ) (VDD=2.85V, fRF= 1575MHz ) 24 15 10 Gain 20 Gain (dB) Pout (dBm) 5 , OIP3, IIP3 vs. frequency (VDD=2.85V, f1= 1575MHz , f2=f1+100kHz) (VDD=2.85V, f1=1550~1600MHz, f2=f1 , . Temperature Gain, NF vs Temperature (VDD=2.85V, f= 1575MHz ) (VDD=2.85V, f= 1575MHz ) 2.5 Gain (dB


    Original     		PDF NJG1144KA1 NJG1144KA1
    NJG1144KA1

    Abstract: No abstract text available
    Text: =2.85V 1.8mA typ. @ VDD=1.8V 21.0dB typ. @ f= 1575MHz , VDD=2.85V 0.65dB typ. @ f= 1575MHz , VDD=2.85V -2.0dBm typ. @ f= 1575MHz , VDD=2.85V FLP6-A1 (Package size: 1.6mm x 1.6mm x 0.55mm typ.) I PIN , (VDD=2.85V, fRF= 1575MHz ) (VDD=2.85V, fRF= 1575MHz ) 24 15 10 Gain 20 Pout 14 -10 , vs. Pin OIP3, IIP3 vs. frequency (VDD=2.85V, f1= 1575MHz , f2=f1+100kHz) (VDD=2.85V, f1 , . Temperature Gain, NF vs Temperature (VDD=2.85V, f= 1575MHz ) (VDD=2.85V, f= 1575MHz ) 2.5 Gain (dB


    Original     		PDF NJG1144KA1 NJG1144KA1
    2003 - AMP HB3

    Abstract: HK1005 NJG1107HB3
    Text: 1500 1550 1600 1650 1700 0 5 frequency (MHz) Pout vs. Pin =2.7V, f= 1575MHz , Ta , =2.7V, f1= 1575MHz , f2=f1+100kHz, Ta=25 C) DD 5 0 Pout Pout, IM3 (dBm) Pout (dBm) 0 , Pin (dBm) o P-1dB(IN) vs. V DD -10 -5 0 o DD (f= 1575MHz , Ta=25 C) (f= 1575MHz , I DD o DD vs. V DD o (f1= 1575MHz , f2=f1+100kHz, Pin=-35dBm, Ta=25 C) (RF=OFF, Ta , ) 17 3 -13 16 2.5 15 2 =2.7V, f= 1575MHz ) DD -12 Gain NF 14 1.5


    Original     		PDF NJG1107HB3 575GHz 5751GHz 575GHz, 1000pF HK1005) AMP HB3 HK1005 NJG1107HB3
    2002 - Maxim 17113

    Abstract: 1965MHz 13006 TRANSISTOR transistor 30945 db 40531 34119 8644 TA 8644 maxim 9604 2368 inductor
    Text: 19-1872; Rev 0; 1/01 UAL IT MAN TION K SHEET VALUA E TA WS DA FOLLO 1575MHz /1900MHz Variable-IP3 Low-Noise Amplifiers Features Low Noise Figure MAX2654: 1.5dB at 1575MHz MAX2655: 1.45dB at 1575MHz MAX2656: 1.9dB at 1960MHz The MAX2654 operates in the GPS frequency of 1575MHz with 15.1dB of , 1575MHz MAX2655: 14.1dB at 1575MHz MAX2656: 13.5dB at 1960MHz Integrated 50 Output Matching Variable , , eliminating the need for an external supply switch. MAX2654/MAX2655/MAX2656 1575MHz /1900MHz


    Original     		PDF 1575MHz/1900MHz MAX2654: 1575MHz MAX2655: MAX2656: 1960MHz MAX2654 1575MHz MAX2655 Maxim 17113 1965MHz 13006 TRANSISTOR transistor 30945 db 40531 34119 8644 TA 8644 maxim 9604 2368 inductor
    2000 - MAX2654

    Abstract: MAX2654EXT-T MAX2655 MAX2655EXT-T MAX2656 MAX2656EXT-T sc70 topmark
    Text: 19-1872; Rev 1; 4/02 KIT ATION EVALU E AILABL AV 1575MHz /1900MHz Variable-IP3 Low-Noise Amplifiers Features o Low Noise Figure MAX2654: 1.5dB at 1575MHz MAX2655: 1.45dB at 1575MHz MAX2656: 1.9dB at 1960MHz The MAX2654 operates in the GPS frequency of 1575MHz with 15.1dB of gain, 1.5dB , 1575MHz MAX2655: 14.1dB at 1575MHz MAX2656: 13.5dB at 1960MHz o Integrated 50 Output Matching o , 1575MHz /1900MHz Variable-IP3 Low-Noise Amplifiers ABSOLUTE MAXIMUM RATINGS VCC to GND


    Original     		PDF 1575MHz/1900MHz MAX2654: 1575MHz MAX2655: MAX2656: 1960MHz MAX2654 1575MHz MAX2655 MAX2654EXT-T MAX2655EXT-T MAX2656 MAX2656EXT-T sc70 topmark
    Germanium diode data sheet

    Abstract: MAX2682
    Text: WIRELESS, RF, AND CABLE May 01, 2002 Silicon Germanium (SiGe) Downconverter Tuned for GPS Receivers The RF input for a global positioning system (GPS) receiver is 1575MHz. Assuming an IF of 85MHz , from a +3.0V supply. The RF input for a GPS receiver is 1575MHz. Assuming an IF of 85MHz, and low-side , ) between 10MHz to 500MHz. The RF input for a global positioning system (GPS) receiver is 1575MHz. Assuming , Performance VCC = +3.0V, fRF1 = 1575MHz , fRF2 = 1576MHz, fLO = 1490MHz, PLO = -5dBm, fIF = 85MHz Parameter


    Original     		PDF 1575MHz. 85MHz, 1490MHz) MAX2682 900MHz, Germanium diode data sheet
    2007 - 03806

    Abstract: NJG1108
    Text: =1.85V, fRF= 1575MHz , Ta=+25°C, Zs=Zl=50ohm PARAMETERS Operating Frequency Small signal gain Noise figure Input , (Condition: Ta=+25°C, VDD=VINV=2.7V, VCTL=1.85V, Zs=Zl=50ohm) Pout vs. Pin 10 5 0 (fRF= 1575MHz ) 24 22 20 Gain, IDD vs. Pin (fRF= 1575MHz ) 8 7 Gain 6 Pout (dBm) Gain (dB) Pout -5 -10 -15 -20 , =2.7V, VCTL=1.85V, Zs=Zl=50ohm) Gain, NF vs. VDD, VINV 24 22 20 (fRF= 1575MHz ) 4 3.5 -8 -10 P-1dB(IN) vs. VDD, VINV (fRF= 1575MHz ) P-1dB(IN) (dBm) Gain 3 -12 -14 -16 -18 -20 -22 -24 2.5 Gain


    Original     		PDF NJG1108HA8 03806 NJG1108
    ...

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