155 02 70 00 Search Results

SFERNICE RCK 02

Abstract: Vishay Sfernice RCK02 RS92n Sfernice RCK RCK02A RCK02
Contextual Info: Data sheet E 4/6.826 - 10497 RCK 02-02A 04 05-05A 06 very high precision and stability metal foil resistor 5 W to 1,5 W to 70°C NF C/UTE 83-220 CECC 40300 CECC 40302-001 BS CECC 40302-004 MIL-R-55182J ESA/SCC 4001 011 – bulk metal The ultra-high precision planar resistors of the RCK series are produced

Contextual Info: Data sheet E 5/6.826 -18298 VISHAY RCK 02-02A 04 05-05A 06 very high precision and stability metal foil resistor 5 W to 1,5 W to 70°C NF C/UTE 83-220 CECC 40300 CECC 40302-001 BS CECC 40302-004 MIL-R-55182J ESA/SCC 4001 011 - bulk metal The ultra-high precision planar resistors of the RCK series are produced

Contextual Info: 0CH3592 A P I A P I ELECTRONICS ELECTRONICS INC 26C I NC EL, D 7^-3 00218 DE | DOMBSTS 3-b I ß COLLECTOR CURRENT = 2 AMPS NPN TYPES - CONTINUED Device No 2N2991 2N2992 2N2993 2N2994 2N3665 •2N3666 2N3766 2N3767 2N3917 2N3918 2N4000 2N4001 2N4237 2N4238

RS58Y

Abstract: rs64y RS63Y RS68Y vishay series bc 106 RESISTANCE RS71Y RS69Y RCMS1 rs71y RCMS02
Contextual Info: RCMS 02, 05, 1 Vishay Sfernice Molded Metal Film High Stability Resistors FEATURES • 0.125 W to 1 W at 70 °C • Approval according to CECC 40 101 002/803 • High long term stability drift < 0.5 % after 1000 h • Excellent temperature coefficient ≤ ± 30 ppm/°C in the

2N3774

Abstract: 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666 2N3766 2N3767 2N3917
Contextual Info: 0043592 A P I A P I EL ECT RONICS ELECTRONICS INC 26C I NC lit . 00218 DE I OOMBS^a ODODaia ñ COLLECTOR CURRENT = 2 AMPS NPN TYPES - CONTINUED Device No 2N2991 Case T O -5 STUD T O -5 STUD T O -5 STUD TO -5 STUD T O -5 T O -5 T O -66 T O -66 T O -3 TO -3

2N2991

Abstract: 2N2992 2N2993 2N2994 2N3665 2N3766 2N3767 2N3917 2N3918 2N4000
Contextual Info: 0043592 A P I ELECTRONICS A P I ELECTRONICS INC 26C 00 2 1 8 I NC lit . DE I OOMBS^a ODODaia ñ COLLECTOR CURRENT = 2 AMPS NPN TYPES - CONTINUED Device No 2N2991 Case T O -5 STUD T O -5 STUD T O -5 STUD TO -5 STUD T O -5 T O -5 T O -66 T O -66 T O -3 TO -3

2SC1253

Abstract: E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733
Contextual Info: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH PRO DU CT: fr = 2.2 GHz The NE740 series of NPN silicon transistors is designed for

NEC NE85635

Abstract: 2SC3356 to 92 NE85634 NEC 2501 MF 216 TRANSISTOR NEC B77 NE85834 2sc3356 NE856 sot23 41 NE85635
Contextual Info: NEC NE C / CALIFORNIA 5 L .E J> b457414 000240^ NPN SILICON HIGH FREQUENCY TRANSISTOR 437 M N E C C NE856 S ER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH P R O D U C T : fr = 7 G H z The N E856 series of NPN epitaxial silicon transistors is

2SC1253

Abstract: 2SC1251 NEC k 2134 transistor NE74000 NE74014 NE74020 NE90115 CTO-39 2143E 1321E12
Contextual Info: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D 7 z ll- â S ' NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR DESCRIPTION AND APPLICATIONS FEATURES The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent in­

RCMS02

Abstract: RESISTANCE RS71Y rs58y rs71y Rs63y RCMS05 RS68Y RCMS1 k3 vishay series bc 106 MIL-R-105509
Contextual Info: RCMS02, RCMS05, RCMS1 Vishay Sfernice Molded Metal Film High Stability Resistors FEATURES • 0.125 W to 0.5 W at 70 °C • Approval according to CECC 40 101 002/803 • High long term stability drift < 0.5 % after 1000 h • Excellent temperature coefficient ≤ ± 30 ppm/°C in the

GR-253

Abstract: V23816-N1018-C23 laser driver circuits
Contextual Info: V23816-N1018-C23 Single Mode 1310 nm 16-Line Parallel 2.5 GBd Transceiver OC-48 SONET / SDH Telecom Links up to 15 km Preliminary Dimensions in mm inches (22.86) .9 (88.9±0.5) 3.5±.02 dia.078+.003) ˘1.98+0.08 c Pin 99 Pin 100 Rx 4x Pin 1 Pin 2 c (63.5±0.5)

InGaAs apd photodiode

Abstract: GR-253 V23816-N1018-C43 oc-48 laser diode 1550 ns single mode oc-48 laser diode driver 1550 transceiver DFB APD 155 InGaAs APD 28 pin pc to pc data transfer using laser apd 1550 rise time Photodiode apd high sensitivity
Contextual Info: V23816-N1018-C43 Single Mode 1550 nm 16-Line Parallel 2.5 GBd Transceiver OC-48 SONET / SDH Telecom Links up to 80 km Preliminary Dimensions in mm inches (22.86) .9 (88.9±0.5) 3.5±.02 dia.078+.003) ˘1.98+0.08 c Pin 99 Pin 100 Rx c 69.85 2.75 (63.5±0.5)

GR-253

Abstract: V23816-N1018-C13 fabry perot 155 source fabry perot 155 fabry perot 155 transmitter 94 rx
Contextual Info: V23816-N1018-C13 Single Mode 1310 nm 16-Line Parallel 2.5 GBd Transceiver OC-48 SONET / SDH Telecom Links up to 2 km Preliminary Dimensions in mm inches (22.86) .9 (88.9±0.5) 3.5±.02 dia.078+.003) ˘1.98+0.08 c Pin 99 Pin 100 Rx Pin 2 c c (63.5±0.5) 2.5±0.02

rs71y

Abstract: rs58y RESISTANCE RS71Y RCMS02 RCMS1
Contextual Info: RCMS02, RCMS05, RCMS1 Vishay Sfernice Molded Metal Film High Stability Resistors FEATURES • 0.125 W to 0.5 W at 70 °C • Approval according to CECC 40 101 002/803 • High long term stability drift < 0.5 % after 1000 h • Excellent temperature coefficient ≤ ± 30 ppm/°C in the

2SC2407

Abstract: nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592
Contextual Info: N E C/ 1SE CALIFORNIA L4H7414 D 0001310 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES NE416 SERIES DESCRIPTION AND APPLICATIONS The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The series provides economical solutions to a wide range of ampli­

rs58y

Abstract: RS63Y RESISTANCE RS71Y RS58 RS68Y rs64y rs71y S0MC RCMS05 RC marking
Contextual Info: RCMS02, RCMS05, RCMS1 Vishay Sfernice Molded Metal Film High Stability Resistors FEATURES • 0.125 W to 0.5 W at 70 °C • Approval according to CECC 40 101 002/803 • High long term stability drift < 0.5 % after 1000 h • Excellent temperature coefficient ≤ ± 30 ppm/°C in the

RS58Y

Abstract: RCMS1 RCMS02 RS71Y RCMS05
Contextual Info: RCMS02, RCMS05, RCMS1 Vishay Sfernice Molded Metal Film High Stability Resistors FEATURES • 0.125 W to 0.5 W at 70 °C • Approval according to CECC 40 101 002/803 • High long term stability drift < 0.5 % after 1000 h • Excellent temperature coefficient ≤ ± 30 ppm/°C in the

RS64Y

Abstract: RESISTANCE RS71Y RCMS1
Contextual Info: RCMS02, RCMS05, RCMS1 Vishay Sfernice Molded Metal Film High Stability Resistors FEATURES • 0.125 W to 0.5 W at 70 °C • Approval according to CECC 40 101 002/803 • High long term stability drift < 0.5 % after 1000 h • Excellent temperature coefficient ≤ ± 30 ppm/°C in the

Contextual Info: SMD INDUSTRIAL CERMET TRIMMERS • m'lflat.l 0003554 EbT ■ DEI VISHAY _ 1/4" SMD, SQUARE, MULTITURN, CERMET, SIDE ADJUST MODEL ST63Z Resistance Range: 1 0 n to 2Megohms Resistance Tol: ±10% -.039 TCR: ±100ppm/°C, -55 to +155°C

RCMS1

Abstract: rcms05 RS71Y RCMS02
Contextual Info: RCMS02, RCMS05, RCMS1 www.vishay.com Vishay Sfernice Molded Metal Film High Stability Resistors FEATURES • • • • • • • • 0.125 W to 0.5 W at 70 °C Approval according to CECC 40 101 002/803 High long term stability drift < 0.5 % after 1000 h

2SC4087

Abstract: 2SC4090 NE73439 NE73439B
Contextual Info: NEC/ 5bE D CALIFORNIA NEC b427414 00024btì b4T • N E C C T - 'S l- is NPN SILICO N GENERAL PU RPO SE TRANSISTO R NE73439 NE73439B OUTLINE DIMENSIONS FEATURES • H IG H G A IN BA N D W ID T H P R O D U C T : Units in mm OUTLINE 39 (SOT-143) 2.0 GHz (TYP)

f301 -06

Contextual Info: Ultra-Precision Resistor Network Case-Encapsulated Composition of Type Number Example: SC 005C 1K000 99K00 B Q 2 1 SC 4 3 1 Type 2 Circuit Symbol 3 Resistance Value (R1) 5 6 4 Resistance Value (Rn) 5 Resistance Tolerance (Absolute) 6 Resistance Tolerance (Matching)

2SC1593

Abstract: 2SC1041 GE-64 NEC k 2134 transistor NE64300 NE64310 NE64320 V020 transistor BU 189
Contextual Info: N E C/. C A L I F O R N I A b427414 1SE D 0001343 T i ► rF' î NE64300 NE64310 NE64320 NPN MEDIUM POWER MICROWAVE TRANSISTOR r t FEATURES DESCRIPTION AND APPLICATIONS • H IG H O U T P U T P O W E R : 900 mW at 2 G Hz Th e NE643 series of NPN silicon medium power transistors is

NEL230153

Abstract: GG01 NEL2300 transistor k42 3500 2301 151 k424 LARGE SIGNAL IMPEDANCES transistor T330 NEL2301-53 NEL2303
Contextual Info: NE C / CALIFORNIA NEC 1SE D h 427 414 0001275 T 'S h 't l T - 3 3 -Ö ? Ö NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS jta = 2 5 °q RATINGS • HIGH GAIN: G mb = 6.5 dB