150A GTO 2000 V Search Results

TGS 2600

Abstract: 150a gto TGS 2600 series TGS 800 GTO thyristor 3000V 800A GTO 6500V AN4506 DGT409BCA DGT409BCA6565 gto Gate Drive
Contextual Info: DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse

RURU150120

Contextual Info: RURU150120 Data Sheet January 2000 File Number 4146.1 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

RURU150120

Contextual Info: RURU150120 Data Sheet January 2002 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

00365 r

Abstract: eupec T 271 N 150a gto
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 271 S 45 T 2 center holes ∅ 3,5 x 4,0 C A SZ M /26.06.97 Schnelle Gleichrichterdiode Fast Diode D 271 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values

150a gto

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 901 S 35.45 T ø 100 max. A C 2 center holes ∅ 3.5 x 1.8 SZ M /26.06.97 Schnelle Gleichrichterdiode Fast Diode D 901 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values

150a gto

Abstract: fast 1000V 1000A
Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 801 S 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage

200w dc to ac inverter Circuit diagram

Abstract: diagram UPS 200w FM2G150US60
Contextual Info: IGBT FM2G150US60 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is

150a gto

Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 801 S 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage

150a gto

Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 801 S 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 801 S 45 T ø75 C A ø77 max. 48-0.1 2 center holes ∅ 3.5 x 1.8 SZ M /26.06.97 Schnelle Gleichrichterdiode Fast Diode D 801 S 45 T Elektrische Eigenschaften / Electrical properties

Contextual Info: KSC5603D KSC5603D High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Internal schematic diagram C 2 (1) B 1 E (3)

Contextual Info: FGH75N60UF tm 600V, 75A Field Stop IGBT Features General Description • High Current Capability • Low Saturation Voltage: VCE sat =1.9V @ IC = 75A • High Input Impedance Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for

Contextual Info: FGH75N60SF tm 600V, 75A Field Stop IGBT Features General Description • High Current Capability • Low Saturation Voltage: VCE sat =2.3V @ IC = 75A • High Input Impedance Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for

FM2G300US60

Contextual Info: IGBT FM2G300US60 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is

Contextual Info: FGY75N60SMD 600 V, 75 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications

Contextual Info: FGY75N60SMD 600V, 75A Field Stop IGBT Features General Description • High Current Capability • Low Saturation Voltage: VCE sat = 1.9V @ IC = 75A Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar

GTO 6500V

Contextual Info: M ITEL DGT409BC A6565 Gate Turn-off Thyristor SEMICONDUCTOR Supersedes March 1998 version, DS4414-2.1 APPLICATIONS The D G T409 BCA is a sym m etrical GTO designed for applications w hich specifically require a reverse blocking capability, such as current source inverters CSI . R everse

FMG2G75US60

Contextual Info: IGBT FMG2G75US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

FMBH1G75US60

Contextual Info: IGBT FMBH1G75US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

FMBL1G300US60

Contextual Info: IGBT FMBL1G300US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

Contextual Info: IGBT FMG1G75US60L Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

FGH75N60UFTU

Abstract: fgh75n60
Contextual Info: FGH75N60UF tm 600V, 75A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low

Contextual Info: Inte rn at io nal rectifier " 73 dF|4ü554se o o o t ,s 7 i 3 |~ r ~ 2 .5 - / ? Data Sheet No. PD-3.086 INTERNATIONAL RECTIFIER ISO PFT SERBES OQOA It GGI Gate Türn-Off Hockey Puk SCRs Major Ratings and Characteristics — • tgq 150PFT200 150PFT250 800

I2063

Abstract: 150a gto ka s15 DO-205AC
Contextual Info: Bulletin I2063 rev. A 09/94 SD153N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 150A 1.0 to 1.5 µs recovery time High voltage ratings up to 1600V High current capability Optimized turn on and turn off characteristics