150A GTO 2000 V Search Results

TGS 2600

Abstract: 150a gto TGS 2600 series TGS 800 GTO thyristor 3000V 800A GTO 6500V AN4506 DGT409BCA DGT409BCA6565 gto Gate Drive
Contextual Info: DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse

RURU15060

Contextual Info: RURU15060 Data Sheet January 2000 File Number 3201.3 150A, 600V Ultrafast Diode Features The RURU15060 is an ultrafast diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

RURU150120

Contextual Info: RURU150120 Data Sheet January 2000 File Number 4146.1 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

rhr150120

Abstract: RHRU150120
Contextual Info: RHRU150120 Data Sheet Title HR 501 bt 0A, 00V pert ode utho rpoon, pert al odes vache ergy ted, itch wer pes, wer File Number 4049.1 150A, 1200V Hyperfast Diode Features The RHRU150120 is a hyperfast diode with soft recovery characteristics trr < 100ns). It has half the recovery time of

RHRU15060

Contextual Info: RHRU15060 Data Sheet Title HR 506 bt 0A, 0V pert ode utho eyrds 0A, 0V pert ode, errpoon, pert odes vache ergy ted, itch wer pes, wer itch January 2000 File Number 3089.3 150A, 600V Hyperfast Diode Features The RHRU15060 is a hyperfast diode with soft recovery

TA09925

Abstract: RURU15060
Contextual Info: RURU15060 Data Sheet January 2002 150A, 600V Ultrafast Diode Features The RURU15060 is an ultrafast diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

RURU150120

Contextual Info: RURU150120 Data Sheet January 2002 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

00365 r

Abstract: eupec T 271 N 150a gto
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 271 S 45 T 2 center holes ∅ 3,5 x 4,0 C A SZ M /26.06.97 Schnelle Gleichrichterdiode Fast Diode D 271 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values

150a gto

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 901 S 35.45 T ø 100 max. A C 2 center holes ∅ 3.5 x 1.8 SZ M /26.06.97 Schnelle Gleichrichterdiode Fast Diode D 901 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values

Contextual Info: DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse

TGS 2600

Abstract: GTO thyristor 3000V 800A 150a gto DGT409BCA DGT409BCA6565 TGS 200
Contextual Info: DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse

150a gto

Abstract: fast 1000V 1000A
Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 801 S 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage

Contextual Info: IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for strobe

150a gto

Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 901 S 35 . 45 T S Vorläufige Daten Preliminary Data Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung

150a gto

Abstract: 600 801
Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 801 S 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage

diode ir 0406

Abstract: 150a gto DIODE 0406
Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 901 S 35 . 45 T S Vorläufige Daten Preliminary Data Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung

200w dc to ac inverter Circuit diagram

Abstract: diagram UPS 200w FM2G150US60
Contextual Info: IGBT FM2G150US60 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is

150a gto

Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 801 S 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage

150a gto

Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 801 S 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage

150a gto

Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 901 S 35 . 45 T S Vorläufige Daten Preliminary Data Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung

150a gto

Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 901 S 35 . 45 T S Vorläufige Daten Preliminary Data Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung

Contextual Info: DGT409BCA Reverse Blocking Gate Turn-off Thyristor DS4414-4.2 December 2007 LN25790 APPLICATIONS KEY PARAMETERS The DGT409BCA is a symmetrical GTO designed for applications, which specifically require a reverse blocking capability, such as current source inverter

RHR150120

Abstract: RHRU150120 RHR1501
Contextual Info: RHRU150120 Data Sheet January 2002 150A, 1200V Hyperfast Diode Features The RHRU150120 is a hyperfast diode with soft recovery characteristics trr < 100ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.

DGT409BCA

Abstract: TGS 2600 current source inverter TGS 800 GTO thyristor GTO thyristor 3000V 800A gto Gate Drive circuit 150a gto Gate Turn-Off Thyristors GTO thyristor Application notes
Contextual Info: DGT409BCA Reverse Blocking Gate Turn-off Thyristor DS4414-4.2 December 2007 LN25790 APPLICATIONS KEY PARAMETERS The DGT409BCA is a symmetrical GTO designed for applications, which specifically require a reverse blocking capability, such as current source inverter