150A GTO 2000 V Search Results
150A GTO 2000 V Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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ND9ACB150A |
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ix Industrial Cable, IX to IX, Type A, 0.5m, 26AWG 8 Wire ix Industrial Cable, PVC, Cat 6A, Gold Flash | |||
ND9BCB150A |
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ix Industrial, Input output connectors, Cable, ix to ix, Type B, 0.5m, Gold Flash, 26AWG 8 Wire Cable, PVC, Cat 6A | |||
TVP5150APBSR |
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Ultralow Power NTSC/PAL/SECAM Video Decoder w/Robust Sync Detector 32-TQFP 0 to 70 |
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TVP5150AM1MPBSREP |
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Enhanced Product Ultralow Power NTSC/PAL/SECAM Video Decoder 32-TQFP -55 to 125 |
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TVP5150AM1IZQC |
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Ultralow Power NTSC/PAL/SECAM Video Decoder w/Robust Sync Detector 48-BGA MICROSTAR JUNIOR -40 to 85 |
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150A GTO 2000 V Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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TGS 2600
Abstract: 150a gto TGS 2600 series TGS 800 GTO thyristor 3000V 800A GTO 6500V AN4506 DGT409BCA DGT409BCA6565 gto Gate Drive
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DGT409BCA DS4414-4 DGT409 TGS 2600 150a gto TGS 2600 series TGS 800 GTO thyristor 3000V 800A GTO 6500V AN4506 DGT409BCA DGT409BCA6565 gto Gate Drive | |
RURU150120Contextual Info: RURU150120 Data Sheet January 2000 File Number 4146.1 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial |
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RURU150120 RURU150120 200ns) 200ns | |
RURU150120Contextual Info: RURU150120 Data Sheet January 2002 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction. |
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RURU150120 RURU150120 200ns) 200ns 175oC | |
00365 r
Abstract: eupec T 271 N 150a gto
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150a gtoContextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 901 S 35.45 T ø 100 max. A C 2 center holes ∅ 3.5 x 1.8 SZ M /26.06.97 Schnelle Gleichrichterdiode Fast Diode D 901 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values |
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150a gto
Abstract: fast 1000V 1000A
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200w dc to ac inverter Circuit diagram
Abstract: diagram UPS 200w FM2G150US60
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FM2G150US60 200w dc to ac inverter Circuit diagram diagram UPS 200w FM2G150US60 | |
150a gtoContextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 801 S 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage |
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150a gtoContextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 801 S 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage |
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Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 801 S 45 T ø75 C A ø77 max. 48-0.1 2 center holes ∅ 3.5 x 1.8 SZ M /26.06.97 Schnelle Gleichrichterdiode Fast Diode D 801 S 45 T Elektrische Eigenschaften / Electrical properties |
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Contextual Info: KSC5603D KSC5603D High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Internal schematic diagram C 2 (1) B 1 E (3) |
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KSC5603D O-220 | |
Contextual Info: FGH75N60UF tm 600V, 75A Field Stop IGBT Features General Description • High Current Capability • Low Saturation Voltage: VCE sat =1.9V @ IC = 75A • High Input Impedance Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for |
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FGH75N60UF 100oC | |
Contextual Info: FGH75N60SF tm 600V, 75A Field Stop IGBT Features General Description • High Current Capability • Low Saturation Voltage: VCE sat =2.3V @ IC = 75A • High Input Impedance Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for |
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FGH75N60SF 100oC FGH75N60SF | |
FM2G300US60Contextual Info: IGBT FM2G300US60 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is |
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FM2G300US60 FM2G300US60 | |
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Contextual Info: FGY75N60SMD 600 V, 75 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications |
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FGY75N60SMD O-247D03) | |
Contextual Info: FGY75N60SMD 600V, 75A Field Stop IGBT Features General Description • High Current Capability • Low Saturation Voltage: VCE sat = 1.9V @ IC = 75A Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar |
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FGY75N60SMD Power-247 | |
GTO 6500VContextual Info: M ITEL DGT409BC A6565 Gate Turn-off Thyristor SEMICONDUCTOR Supersedes March 1998 version, DS4414-2.1 APPLICATIONS The D G T409 BCA is a sym m etrical GTO designed for applications w hich specifically require a reverse blocking capability, such as current source inverters CSI . R everse |
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DGT409BC A6565 DS4414-2 DS4414-3 000V/jiS GTO 6500V | |
FMG2G75US60Contextual Info: IGBT FMG2G75US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power |
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FMG2G75US60 E209204 FMG2G75US60 | |
FMBH1G75US60Contextual Info: IGBT FMBH1G75US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power |
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FMBH1G75US60 E209204 FMBH1G75US60 | |
FMBL1G300US60Contextual Info: IGBT FMBL1G300US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power |
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FMBL1G300US60 E209204 FMBL1G300US60 | |
Contextual Info: IGBT FMG1G75US60L Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power |
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FMG1G75US60L E209204 | |
FGH75N60UFTU
Abstract: fgh75n60
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FGH75N60UF FGH75N60UF FGH75N60UFTU fgh75n60 | |
Contextual Info: Inte rn at io nal rectifier " 73 dF|4ü554se o o o t ,s 7 i 3 |~ r ~ 2 .5 - / ? Data Sheet No. PD-3.086 INTERNATIONAL RECTIFIER ISO PFT SERBES OQOA It GGI Gate Türn-Off Hockey Puk SCRs Major Ratings and Characteristics — • tgq 150PFT200 150PFT250 800 |
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554se 150PFT200 150PFT250 150PFT | |
I2063
Abstract: 150a gto ka s15 DO-205AC
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I2063 SD153N/R DO-30 SD153N/R SD153N/R. 150a gto ka s15 DO-205AC |