150A GTO Search Results

rur150

Abstract: RUR150100 RURU150100 RURU15070 RURU15080 RURU15090
Contextual Info: RURU15070, RURU15080, RURU15090, RURU150100 150A, 700V - 1000V Ultrafast Diodes January 2002 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . <125ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . .

RURU150100

Abstract: RURU15070 RURU15080 RURU15090
Contextual Info: RURU15070, RURU15080, RURU15090, RURU150100 150A, 700V - 1000V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . <125ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . .

RG30H

Contextual Info: Preliminary SGR20N40L / SGU20N40L N-CHANNEL IGBT FEATURES * High Input Impedance * High Peak Current Capability 150A * Easy Gate Drive APPLICATIONS *Strobe Flash ABSOLUTE MAXIMUM RATINGS Symbol Characteristics V Collector-Emitter Voltage qes Rating Units

Contextual Info: Preliminary SGR20N40L / SGU20N40L FEATURES N-CHANNEL IGBT D-PAK I-PAK * High Input Impedance * High Peak Current Capability 150A * Easy Gate Drive APPLICATIONS C *Strobe Flash G E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics VCES Rating Units Collector-Emitter Voltage

RURU150120

Contextual Info: RURU150120 Data Sheet January 2002 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

TA09925

Abstract: RURU15060
Contextual Info: RURU15060 Data Sheet January 2002 150A, 600V Ultrafast Diode Features The RURU15060 is an ultrafast diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

ka s15

Abstract: 150a gto DO-205AC do-30
Contextual Info: Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK To Order Previous Datasheet Index Next Data Sheet Bulletin I2063/A SD153N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 150A

RURU15060

Contextual Info: RURU15060 Data Sheet January 2000 File Number 3201.3 150A, 600V Ultrafast Diode Features The RURU15060 is an ultrafast diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

RURU150120

Contextual Info: RURU150120 Data Sheet January 2000 File Number 4146.1 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

RHRU15060

Contextual Info: RHRU15060 Data Sheet January 2002 150A, 600V Hyperfast Diode Features The RHRU15060 is a hyperfast diode with soft recovery characteristics trr < 60ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.

RHR150100

Abstract: RHRU150100 RHRU15090
Contextual Info: RHRU15090, RHRU150100 January 2002 150A, 900V - 1000V Hyperfast Diodes Features RHRU15090 and RHRU150100 TA49072 are hyperfast diodes with soft recovery characteristics (tRR < 90ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.

RHR150120

Abstract: RHRU150120 RHR1501
Contextual Info: RHRU150120 Data Sheet January 2002 150A, 1200V Hyperfast Diode Features The RHRU150120 is a hyperfast diode with soft recovery characteristics trr < 100ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: Bulletin I2063 rev. B 09/06 SD153N/R SERIES FAST RECOVERY DIODES Stud Version Features 150A High power FAST recovery diode series 1.0 to 1.5 µs recovery time High voltage ratings up to 1600V High current capability Optimized turn on and turn off characteristics

FS300R12KE3

Abstract: FS450R12KE3 FS225R12KE3 ECONOPACK eupec FS450R12KE3 FS150R12KE3 205G1 FS300R17KF6C FS450R12KE3 EUPEC FS300R1
Contextual Info: Econopack+ Product Range Ic 1200V IGBT3 1700V Loss Loss 6 x 150A FS150R12KE3* FS150R17KF6C 6 x 225A FS225R12KE3 FS225R17KF6C 6 x 300A FS300R12KE3 FS300R17KF6C 6 x 450A FS450R12KE3 - * on request only EconoPACK+ + + + 0,8 C5 C3 G5 G3 E5 20.5±1 17±0.5 G1 V

FGW15N40

Abstract: 15N40 TSSOP8 IGBT FLASH
Contextual Info: FGW15N40 Strobe Flash N-Channel Logic Level IGBT Features General Description „ VCE SAT = 5.0V at IC=150A This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applications where board space is a premium. These devices have

Contextual Info: FGR15N40 Strobe Flash N-Channel Logic Level IGBT Features General Description „ VCE SAT = 4.4V at IC=150A This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applications where board space is a premium. These devices have

RHRU15060

Contextual Info: RHRU15060 Data Sheet Title HR 506 bt 0A, 0V pert ode utho eyrds 0A, 0V pert ode, errpoon, pert odes vache ergy ted, itch wer pes, wer itch January 2000 File Number 3089.3 150A, 600V Hyperfast Diode Features The RHRU15060 is a hyperfast diode with soft recovery

15N40A

Abstract: FGW15N40A
Contextual Info: FGW15N40A Strobe Flash N-Channel Logic Level IGBT Features General Description „ VCE SAT = 4.4V at IC=150A This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applications where board space is a premium. These devices have

Contextual Info: FGW15N40A Strobe Flash N-Channel Logic Level IGBT Features General Description „ VCE SAT = 4.4V at IC=150A This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applications where board space is a premium. These devices have

FGR15N40A

Abstract: 15N40A OC73
Contextual Info: FGR15N40A Strobe Flash N-Channel Logic Level IGBT Features General Description VCE SAT = 4.4V at IC =150A This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applications where board space is a premium. These devices have

RHR150100

Abstract: RHRU150100 RHRU15090
Contextual Info: RHRU15090, RHRU150100 April 1995 Title HR 509 HRU 010 bt 0A, 0V 00V pert odes File Number 150A, 900V - 1000V Hyperfast Diodes Features RHRU15090 and RHRU150100 TA49072 are hyperfast diodes with soft recovery characteristics (tRR < 90ns). They have half the recovery time of ultrafast diodes and are silicon

RGK20

Abstract: SG400EX11
Contextual Info: GATE TURN-OFF THYRISTOR SG4Q0 R,U,W,EX 11 CHOPPER, INVERTER APPLICATION Unit in mm . Repetitive Peak Off-State Voltage : VdRM=1 300,1600,1800,2500V . R.M.S On-State Current : IT ( R M S )=150A . Peak Turn-Off Current : It g OM= 400A . Critical Rate of Rise of On-State Current

rhr150120

Abstract: RHRU150120
Contextual Info: RHRU150120 Data Sheet Title HR 501 bt 0A, 00V pert ode utho rpoon, pert al odes vache ergy ted, itch wer pes, wer File Number 4049.1 150A, 1200V Hyperfast Diode Features The RHRU150120 is a hyperfast diode with soft recovery characteristics trr < 100ns). It has half the recovery time of

DGT409BCA

Abstract: TGS 2600 current source inverter TGS 800 GTO thyristor GTO thyristor 3000V 800A gto Gate Drive circuit 150a gto Gate Turn-Off Thyristors GTO thyristor Application notes
Contextual Info: DGT409BCA Reverse Blocking Gate Turn-off Thyristor DS4414-4.2 December 2007 LN25790 APPLICATIONS KEY PARAMETERS The DGT409BCA is a symmetrical GTO designed for applications, which specifically require a reverse blocking capability, such as current source inverter