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    Ampleon BLF8G27LS-150VJ

    RF MOSFET LDMOS 28V CDFM6
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    DigiKey BLF8G27LS-150VJ Reel
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    Rochester Electronics BLF8G27LS-150VJ 480 1
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    • 100 $61.81
    • 1000 $55.30
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    Ampleon BLF8G24LS-150VJ

    RF MOSFET LDMOS 28V CDFM6
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    DigiKey BLF8G24LS-150VJ Reel
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    Ampleon BLF9G24LS-150VJ

    Power LDMOS Transistor N-Channel 6-Pin CDFM T/R - Tape and Reel (Alt: BLF9G24LS-150VJ)
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    Avnet Americas BLF9G24LS-150VJ Reel 100
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    Carling Technologies VJDAA60B-00000-000 (RCV-37100150 | | VJDAA60B00000000)

    ROCKER SWITCH, SEALED, CONTURA, V-SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS VJDAA60B-00000-000 (RCV-37100150 | | VJDAA60B00000000) Bulk 8 Weeks 10
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    • 100 $14.61
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    150VJ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MTF110

    Abstract: 2SK2131
    Contextual Info: M O S ïï ^ I ^ kÔ ^ / ^ - M O S F E T M O S Field E ffect P o w e r T ra n s is to r 2SK2131 N 5L ' \ ' T W l ' / \ 0,7 - M O S * < FET T 2 S K 2 1 3 1 t i N 5 L+ ? O U ^ / \ " 7 - M O S 3 - > y I FET l f f l 't y ttfélSI U f i : mm ft o tt S » Œ 150VJË»T4


    OCR Scan     		2SK2131 2SK2131tiN5L 150VJÃ IEI-620) A9MI12& MTF110 2SK2131 PDF

    transistor fc 1013

    Contextual Info: TOSHIBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M302 HIGH POWER SWITCHING APPLICATIONS U nit in mm 03.3 + 0.2 20.5MM. • The 3rd Generation • FRD Included Between Em itter and Collector • Enhancement-Mode •


    OCR Scan     		GT60M302 transistor fc 1013 PDF

    GT40M101

    Contextual Info: GT40M101 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 4 0 M 1 01 HIGH POWER SWITCHING APPLICATIONS. • • • • High Input Impedance High Speed : tf=0.4^s Max. Low Saturation Voltage : VCE(sat)~3.4V (Max.) Enhancement-Mode


    OCR Scan     		GT40M101 GT40M1 2-16F GT40M101 PDF