150 WATTS POWER AMPLIFIER CIRCUIT Search Results

transistor B 722

Abstract: JE 720 transistor JE720 MJE720 MJE721 JE722 BD165 equivalent 500 WATT MJE712 MJE722
Contextual Info: MJE720 silicon MJE721 MJE722 NPN SILICON MEDIUM POWER TRANSISTORS 1.5 AMPERE POWER TRANSISTORS NPN SILICON . designed for use in low-power amplifiers, as drivers in high-power amplifier and medium*speed switching circuits. 40, 60, 80 VOLTS 20 WATTS DC Current Gain h f e = 40 {Min} @ lc = 150 m Adc

2N5758

Abstract: motorola msd6 MSD6100 1N5825 2N4398 2N5745 2N5760
Contextual Info: MOTOROLA Order this document by 2N5758/D SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage

mbd5300

Abstract: mbd-5300 2N6487 MSD6100
Contextual Info: 2N6487 NPH POWER TRANSISTORS 60 VOLTS 15 AMP, 75 WATTS These are designed for use in general-purpose amplifier and switching applications. NPN COLLECTOR Features: • DC Current Gain specified to 15 Amperes hFE = 20-150 @ IQ = 5.0 A = 5.0 Min @ lc = 15 A

2N3846

Abstract: 2N3847 PAWOR ITT 232-2
Contextual Info: TYPES 2N3846, 2N3847 N-P-N TRIPLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER APPLICATIONS • 150 Watts at 100°C Case Temperature • 200 V, 300 V Rated Collector-Emitter Voltages • Max Va|„„ of 0.75 V at 10 A l c • Max Thermal Resistance of 0.5 deg/W

300 watts amplifier circuit diagram

Abstract: Eimac 152th 6hr6 centrifugal blowers 152TH vacuum tube amplifier 812 tube equivalent 700 watts power amplifier circuit diagram I52TH Scans-0017300
Contextual Info: 1 5 2 TH M E D I U M - M U TRI ODE E I T E L - M c C U L L O U G H , I nc. SAN ► BRUNO, • MODU L AT OR OSCILLATOR AMPLIFIER CALIFORNIA The Eimac I52TH is a medium-mu power triode intended for use as an amplifier, oscillator or modulator. It has a maximum plate-dissipation rating of 150 watts and a maximum plate-voltage rating

6dq5

Abstract: 8236 tube tube 6DQ5 B898 B8-98 6DQ5 tube tung-sol 8236
Contextual Info: PRODUCI BULLETIN TUNG-SOL INDUSTRIAL ELECTRON TUBE TYPE 8236 FEBRUARY 1963 BEAM POWER PENTODE D E S C R I P T I O N — The Tung-Sol 8236 is an all service beam power pentode particu­ larly suited for use in horizontal deflection circuits and as an R-F power amplifier up

3 w RF POWER TRANSISTOR 2.7 ghz

Abstract: radar amplifier s-band 2.7 2.9 GHZ 300 watts amplifier s-band 100 watts transistor s-band 2.7Ghz rc circuit PHA2731-190M 190-W
Contextual Info: PHA2731-190M Radar Pulsed Power Amplifier—190 Watts 2.7—3.1 GHz, 200µs Pulse, 10% Duty Outline Drawing1 Features • • • • • • Input and Output matched to 50Ω RC bias circuit included Dual NPN Silicon class C power transistors Soft substrate εr = 10.5

zo102

Abstract: MRF873 motorola rf spice QR01 8E-15 734P ideal amplifier RF Power Transistor spice ZO13
Contextual Info: Simulating Class C RF Amplifiers SPICE can be a versatile tool for RF work as long a few simple precautions are taken. Significant parasitics must be included in the circuit description, models of active devices must be represented using subcircuits, and selection of transient analysis options must be considered. The transient options include

Contextual Info: MOTOROLA Order this document by MHVIC910HR2/D SEMICONDUCTOR TECHNICAL DATA The MHVIC Line 921 MHz - 960 MHz SiFET Integrated Power Amplifier MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations, uses Motorola’s newest High Voltage 26 Volts LDMOS IC technology, and

MCM6830

Abstract: MPQ6842 MCM6832L 200 watts audio amp power transistors circuit diagram power transistor audio amplifier 500 watts circuit diagram MCM6830A MHQ2907 MHQ3467 MHQ6002 Common collector 8 bit darlington
Contextual Info: Multiple Devices S M A L L - S IG N A L M U L T I P L E T R A N S I S T O R S A N D D A R L IN G T O N T R A N S I S T O R S The trend in electronic system design is toward the use of integrated circuits — to reduce com ponent cost, assembly cost, and equipment cost. But ICs still aren't all things to all people, and fo r those circuit designs

MHQ2222

Abstract: MHQ3467 MHQ2907 M 2530 motorola MHQ6001 MPQ2369 MPQ2907 MPQ3467 MPQ3725A MPQ6001
Contextual Info: Multiple Devices S M A L L - S IG N A L M U L T IP L E T R A N S IS T O R S A N D D A R L IN G T O N T R A N S IS T O R S The trend in electronic system design is toward the use of integrated circuits — to reduce component cost, assembly cost, and equipment cost. But ICs still aren't all things to all people, and for those circuit designs

GM 950 motorola

Abstract: ATC600S J361 motorola gm 900 grm40 A113 ECEV1HA100SP GRM42 MHVIC915 MHVIC915R2
Contextual Info: MOTOROLA Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26

J361 IC

Contextual Info: MOTOROLA Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26

J595

Abstract: J673 J361
Contextual Info: MOTOROLA Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26

vhf linear amplifier mrf245

Abstract: amplifier mrf245 mrf247 OMRON lzn2 MRF240 2N6084 equivalent MRF245 DATA SPEC NF2-12 LZN2-UA-DC12 mrf245
Contextual Info: Order this document by AN791/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN791 A SIMPLIFIED APPROACH TO VHF POWER AMPLIFIER DESIGN Prepared by: Helge O. Granberg RF Circuits Engineering This note discusses the design of 35-W and 75-W VHF linear amplifiers. The construction technique

AMPLIFIER 5W

Abstract: NTE1116
Contextual Info: NTE1116 Integrated Circuit Audio Power Amplifier, 5W Description: The NTE1116 is a monolithic integrated circuit designed for use as a low frequency class B amplifier. The external cooling tabs enable 2.5 watts of output power to be achieved without the use of an external heat sink and 5 watts of output power using a small area of the P.C. board copper as a heat sink.

MHVIC910HR2

Abstract: A113 HDR2X10STIMCSAFU MHVIC910HNR2 J5-96
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHVIC910HNR2 Rev. 9, 5/2006 921 MHz - 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HNR2 The MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Freescale’s newest High Voltage 26 Volts LDMOS IC technology, and

HDR2X10

Abstract: MHVIC910HNR2 HDR2X10STIMCSAFU 2052-1618
Contextual Info: Freescale Semiconductor Technical Data 921 MHz-960 MHz SiFET RF Integrated Power Amplifier MHVIC910HNR2 LIFETIME BUY The MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Freescale’s newest High Voltage 26 Volts LDMOS IC technology, and

inductosyn

Abstract: 210A100 quadrature oscillator lvdt resistor 240 inductosyn farrand 21
Contextual Info: power oscillator - sinewave 5 watt 400 Hz-10 kHz series 210A100 FEATURES • 2" X 2" m odule outline • 400 H z-10 kHz frequency range • In-phase and quadrature output • Full 5-watt output • Short circuit and overload protection • Therm al cutoff protection

HDR2X10STIMCSAFU

Abstract: MHVIC910HR2 J559
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MHVIC910HR2/D SEMICONDUCTOR TECHNICAL DATA The RF Line Freescale Semiconductor, Inc. 921 MHz − 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations,

HDR2X10

Abstract: 2052-1618 HDR2X10STIMCSAFU MHVIC910HR2 2052161802 J596
Contextual Info: MOTOROLA Order this document by MHVIC910HR2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 921 MHz - 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations, uses Motorola’s newest High Voltage 26 Volts LDMOS IC technology, and

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHVIC910HNR2 Rev. 9, 5/2006 921 MHz - 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HNR2 The MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Freescale’s newest High Voltage 26 Volts LDMOS IC technology, and

MHVIC910HNR2

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHVIC910HNR2 Rev. 8, 10/2005 921 MHz - 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HNR2 The MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Freescale’s newest High Voltage 26 Volts LDMOS IC technology, and

840 s

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHVIC910HNR2 Rev. 8, 10/2005 921 MHz - 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HNR2 The MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Freescale’s newest High Voltage 26 Volts LDMOS IC technology, and