150 NJ Search Results

1HVUSF40K

Abstract: 1HVUF25K 1HV10K 1HV15K 1HV20K 1HV25K 1HV30K 1HV40K 1HV50K 1HV60K
Contextual Info: HIGH VOLTAGE LOW CURRENT, RECTIFIER BLOCKS WITH INSERT MOUNTING – 1 HV SERIES Rectifier Block L 0.4 Typ. 0.75 FIGURE 10 0.25 6-32 Thread 2 Mtg. Inserts Inches Max. Reverse Recovery Time Trr(nsec) 150 150 150 150 150 150 150 150 150 75 75 75 75 75 75 75

TRansistor A 940

Abstract: NJL5125D NJL1110B NJL1104B NJL1112B NJL1120B NJL1120F NJL1121F NJL5126D NJL112IB
Contextual Info: OPTOELECTRONIC DEVICES & MODULES LIGHT EMITTING DIODE TYPE NJL1104B NJL1110B NJL1112B NJL1120B NJL1121B NJL1122B NJL1120F NJL1121F DESCRIPTION PD [mW] 150 150 225 170 170 170 170 170 GaAs Infrared LED GaAlAs Infrared LED wmmW&mmmm IF H I VR m Xp [nm] 100 100

Contextual Info: PDF016T PDF032T PDF050T PDF100T ~i t~G ED ED ED "•SI' A B C D E F G H PD FD 16T 175 150 85 125 112 10 0 6 .4 55 PDP032T 180 150 85 125 112 100 6 .4 55 PD FO 50T 265 200 115 150 135 120 6 .4 64 P D F10O T 340 260 J 5 L 180 165 150 1 0 .5 80 Approvals: ft

TEMPILSTIK

Abstract: TEMPIL
Contextual Info: TEMPIL°, INC. 2901 Hamilton Blvd. South Plainfield, NJ 07080 PHONE: 908-757-8300 MATERIAL SAFETY DATA SHEET MSDS NO: TS - 150°C DATE: June 10, 2000 EMERGENCY NO: 800-424-9300 FAX: 908-757-9273 SECTION 1 MATERIAL IDENTIFICATION PRODUCT NAME: TEMPILSTIK 150°C/302°F

NJL5126D

Abstract: NJL5125D NJL1110B NJL1112B NJL1120B NJL1120F NJL1121F NJL1122B NJL112IB NJL6103B
Contextual Info: OPTOELECTRONIC DEVICES & MODULES LIGHT EMITTING DIODE TYPE •:MA33MÊt«te«* w m m m m m IF PD VR Xp [mW] H [nm] 150 100 6 940 DESCRIPTION NJL1104B NJL1110B NJL1112B NJL1120B NJL112IB NJL1122B NJL1120F NJL1121F GaAs Infrared LED 150 225 170 170 170 170

2NS404

Abstract: Transistors 2n551 2N1018 2N1478 2N1620 2N551 2N2951 2N3920 2N3444 2N2204
Contextual Info: jo m itr o n ic r discrete devices s e m ic o n d u c t o r s S em itronics Corp. silicon transistors cont'd silicon power transistors Power Dissipation @ 25°C Watts h FE @ lc BVc e (volts) (°C) BVcbo (volts) fC) |A) (Cl (Al (C) 150 200 150 200 150 55

12M250

Abstract: ABB inverter motor fault code ptc s1450 MC4046 REC310PE72 10 amp 12 volt solar charger circuits SOLAR INVERTER 1000 watts circuit diagram
Contextual Info: Contents System Design. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Batteries . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 Grid-Tie Systems. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Contextual Info: Nickel Temperature Sensors 1E/ 1K – Product Series Temperature Range: –60°C.+150°C Nickel temperature sensor elements with PTFE-insulated connections Technical Data Specification: DIN 43760 Temperature range: -60°C to +150°C Temperature Coefficient:

High Temperature

Abstract: Snubber HT1 Series high-temperature
Contextual Info: HT1 SERIES Snubber with Thermakon Technology High Temperature DC Snubber Capacitor Electronic Concepts’ new polymer operates to 150°C with the highest peak-current rating of any metallized dry film capacitor. FEATURES - Continuous operation at 150°C

PI-810

Abstract: 3530MHz PI-820 MCE 2000
Contextual Info: SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE MODEL PI-810 150–2000 MHz FEATURES • PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode ␲ Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics

Contextual Info: DIGITRON SEMICONDUCTORS 1N6097-1N6098 50 AMP SCHOTTKY RECTIFIER MAXIMUM RATINGS Symbol Parameter Value TSTG Storage temperature range -65 to +150°C TJ Operating junction temperature range -65 to +150°C RθJC Maximum thermal resistance 1.0°C/W junction to Case

ceramic attenuator MHz

Contextual Info: SURFACE MOUNT-CERAMIC ATTENUATOR, PIN DIODE MODEL PI-810 150-2000 MHz FEATURES ‘ PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode tt Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics

PI-810

Contextual Info: SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE MODEL PI-810 150–2000 MHz FEATURES • PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode ␲ Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics

PI-810

Abstract: 501V PI-820
Contextual Info: SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE MODEL PI-810 150–2000 MHz FEATURES • PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode ␲ Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics

Contextual Info: DIGITRON SEMICONDUCTORS 1N6095-1N6096 25 AMP SCHOTTKY RECTIFIER MAXIMUM RATINGS Symbol Parameter Value TSTG Storage temperature range -65 to +150°C TJ Operating junction temperature range -65 to +150°C RθJC Maximum thermal resistance 2.0°C/W junction to Case

scr 540

Abstract: creepage cke scr 848 diode
Contextual Info: DIODE CAPSULES & SCR CAPSULES Diode Capsules Cathode Anode Inches Strike Distance = .73 inch Creepage Distance = 1.17 inch Strike Distance = .38 inch Creepage Distance = .58 inch 1.30 1.35 2 Places .130 .150 Depth: .070 .080 .980 .150 Depth: .070 .080 1.590

CTU1S

Abstract: CTB34 ad lot id CTB-34 CTU22S
Contextual Info: sanken El e c t r i c u s a HE Fast Recovery Diodes V rm V Type N a \ ^ 1350 CTU-G2DR 1350 CTU-G3DR 150 FMU-11S , R FMU-12S, R 250 450 FMU-14S, R 650 FMU-16S, R 150 FMU-21S, R 250 FMU-22S, R FMU-24S, R 450 FMU-26S, R L 650 150 FMU-31S, R 250 FMU-32S, R 450

D77P2900S

Abstract: T52P800S SCR 25 amps PIV 600 D77P4400 D38P1000S3 Ignitron D77P4400S Standard recovery 1200 Amp 1600 volt high power diode D38P750S T30P600S
Contextual Info: DIODE CAPSULES & SCR CAPSULES Diode Capsules Cathode Anode Inches Strike Distance = .73 inch Creepage Distance = 1.17 inch Strike Distance = .38 inch Creepage Distance = .58 inch 1.30 1.35 2 Places .130 .150 Depth: .070 .080 .980 .150 Depth: .070 .080 1.590

Contextual Info: SiP21106, SiP21107, SiP21108 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator DESCRIPTION FEATURES The SiP21106 BiCMOS 150 mA low noise LDO voltage regulators are the perfect choice for low battery operated low powered applications. An ultra low ground current and low

SOT23-6L Marking Code

Abstract: sip21108 sot23-5 sensor LDR connected to PIC PNP POWER TRANSISTOR SOT23-6L TSC75-6L
Contextual Info: SiP21106, SiP21107, SiP21108 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator DESCRIPTION FEATURES The SiP21106 BiCMOS 150 mA low noise LDO voltage regulators are the perfect choice for low battery operated low powered applications. An ultra low ground current and low

MA 2820

Contextual Info: SiP21106/7/8 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator DESCRIPTION FEATURES The SiP21106 BiCMOS 150 mA low noise LDO voltage regulators are the perfect choice for low battery operated low powered applications. An ultra low ground current and low

SIP21108DT

Abstract: MARKING NJ CODE SOT 23 sip21108 sot23-5 sensor LDR connected to PIC
Contextual Info: SiP21106, SiP21107, SiP21108 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator DESCRIPTION FEATURES The SiP21106 BiCMOS 150 mA low noise LDO voltage regulators are the perfect choice for low battery operated low powered applications. An ultra low ground current and low

Contextual Info: SiP21106, SiP21107, SiP21108 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator DESCRIPTION FEATURES The SiP21106 BiCMOS 150 mA low noise LDO voltage regulators are the perfect choice for low battery operated low powered applications. An ultra low ground current and low

sip21108dt-t1-e3

Abstract: SiP21106DT-18-E3 74442
Contextual Info: SiP21106/7/8 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator DESCRIPTION FEATURES The SiP21106 BiCMOS 150 mA low noise LDO voltage regulators are the perfect choice for low battery operated low powered applications. An ultra low ground current and low