15 GHZ POWER AMPLIFIER Search Results

Contextual Info: SLNA-180-30-35-SMA DATA SHEET 500 MHz to 18 GHz, Medium Power Broadband Amplifier with 15 dBm, 33 dB Gain and SMA SLNA-180-30-35-SMA is a 15 dBm power amplifier designed for operation in the 0.5 GHz to 18 GHz frequency range. The amplifier utilizes high power devices that

isolator 2 2.1 GHz

Contextual Info: HMC-C008 v05.1007 AMPLIFIERS 1 15 WATT POWER AMPLIFIER MODULE, 1.8 - 2.2 GHz Features P1dB Output Power: 15 Watts from 1.8 to 2.2 GHz Gain: 40 dB min Noise Figure: 6 dB Thermally Compensated and Protected Reverse Polarity Protected TTL DC Power Enable Unconditionally Stable

isolator 2 2.1 GHz

Contextual Info: OBSOLETE PRODUCT HMC-C008 v05.1007 15 WATT POWER AMPLIFIER MODULE, 1.8 - 2.2 GHz AMPLFIERS Features P1dB Output Power: 15 Watts from 1.8 to 2.2 GHz Gain: 40 dB min Noise Figure: 6 dB Thermally Compensated and Protected Reverse Polarity Protected TTL DC Power Enable

2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM HMC-C008 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM microwave isolator 15 watt power supply circuit diagram
Contextual Info: HMC-C008 v03.1205 AMPLIFIERS - CONNECTORIZED MODULES 9 15 WATT POWER AMPLIFIER MODULE, 1.8 - 2.2 GHz Features P1dB Output Power: 15 Watts from 1.8 to 2.2 GHz Gain: 40 dB min Noise Figure: 6 dB Thermally Compensated and Protected Reverse Polarity Protected

microwave amplifier 2.4 ghz 10 watts

Abstract: isolator 2 2.1 GHz
Contextual Info: HMC-C008 v03.1205 AMPLIFIERS - CONNECTORIZED MODULES 16 15 WATT POWER AMPLIFIER MODULE, 1.8 - 2.2 GHz Features P1dB Output Power: 15 Watts from 1.8 to 2.2 GHz Gain: 40 dB min Noise Figure: 6 dB Thermally Compensated and Protected Reverse Polarity Protected

circulator 2.3 2.7 GHz

Abstract: HMC-C008 2 Watt rf Amplifier 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 15 watt power supply circuit diagram
Contextual Info: HMC-C008 v05.1007 CONNECTORIZED MODULES - AMPLIFIERS 9 15 WATT POWER AMPLIFIER MODULE, 1.8 - 2.2 GHz Features P1dB Output Power: 15 Watts from 1.8 to 2.2 GHz Gain: 40 dB min Noise Figure: 6 dB Thermally Compensated and Protected Reverse Polarity Protected

2.4 GHz rf amplifier 100w

Abstract: 50 watt amplifier circuit diagram 15 watt power supply circuit diagram HMC-C008 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 20 WATTS POWER AMPLIFIER SCHEMATIC 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Contextual Info: HMC-C008 v04.0906 AMPLIFIERS 1 15 WATT POWER AMPLIFIER MODULE, 1.8 - 2.2 GHz Features P1dB Output Power: 15 Watts from 1.8 to 2.2 GHz Gain: 40 dB min Noise Figure: 6 dB Thermally Compensated and Protected Reverse Polarity Protected TTL DC Power Enable Unconditionally Stable

S8851

Abstract: TOSHIBA MICROWAVE AMPLIFIER toshiba control code
Contextual Info: TOSHIBA S8851 MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 24 dBm at f = 15 GHz • High gain - G1dB = 8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

S8850A

Abstract: S8850 S-8850
Contextual Info: TOSHIBA S8850A MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 21.5 dBm at f = 15 GHz • High gain - G1dB = 9.0 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

S8855

Abstract: TOSHIBA MICROWAVE AMPLIFIER toshiba fet toshiba control code
Contextual Info: TOSHIBA S8855 MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 31.5 dBm at f = 15 GHz • High gain - G1dB = 6.5 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

LP3000

Abstract: LP3000P100 LP3000-P100-1 LP3000-P100-2 LP3000-P100-3 filtronic Solid State
Contextual Info: Filtronic LP3000P100 PACKAGED 2W POWER PHEMT Solid State FEATURES • • • • GATE +33.0 dBm Typical Power at 15 GHz 10 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 45% Power-Added-Efficiency SOURCE DRAIN DESCRIPTION AND APPLICATIONS

toshiba fet

Abstract: S8853 toshiba control code
Contextual Info: TOSHIBA S8853 MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 28 dBm at f = 15 GHz • High gain - G1dB = 7 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

Contextual Info: 15 dBm P1dB, 500 MHz to 18 GHz, Medium Power Broadband Amplifier, 33 dB Gain, SMA TECHNICAL DATA SHEET PE15A3263 The PE15A3263 is a 15 dBm power amplifier designed for operation in the 0.5 GHz to 18 GHz frequency range. The amplifier utilizes high power devices that provide excellent linearity and high gain. High efficiency operation is achieved by using hybrid

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8855 Power GaAs FETs Chip Form Features • High power - P1dB = 31.5 dBm at f= 15 GHz • High gain - G idB = 6.5 dB a tf = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8851 Power GaAs FETs Chip Form Features • High power - PidB = 24 dBm a tf = 15 GHz • High gain - G-|dB —8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

Contextual Info: HMC-C021 v01.0906 WIDEBAND POWER AMPLIFIER MODULE, 21 - 31 GHz AMPLIFIERS 1 Features Gain: 15 dB @ 27 GHz P1dB Output Power: +24 dBm @ 27 GHz Noise Figure: 5 dB @ 27 GHz Spurious-Free Operation ypical Applications Typical Regulated Supply and Bias Sequencing

LP6836-P70-1

Abstract: LP6836P70-1 pHEMT transistor LP6836 filtronic Solid State LP6836P70 LP6836 LP6836P70 LP6836-P70-2 LP6836-P70-3 LP6836P70-3
Contextual Info: Filtronic LP6836P70 PACKAGED MEDIUM POWER PHEMT Solid State FEATURES • • • • • SOURCE +23.0 dBm Typical Power at 15 GHz 11.5 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 50% Power-Added-Efficiency Color-coded by IDSS range DRAIN

chip 66 low noise amplifier

Contextual Info: HMC462 v00.0703 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC462 Wideband LNA is ideal for: Noise Figure: 2 dB @ 10 GHz • Telecom Infrastructure Gain: 15 dB • Microwave Radio & VSAT P1dB Output Power: +15 dBm @ 10 GHz

HMC-C020

Abstract: HMC-C021
Contextual Info: HMC-C021 v01.0906 WIDEBAND POWER AMPLIFIER MODULE, 21 - 31 GHz AMPLIFIERS 1 Features Gain: 15 dB @ 27 GHz P1dB Output Power: +24 dBm @ 27 GHz Noise Figure: 5 dB @ 27 GHz Spurious-Free Operation Typical Applications Regulated Supply and Bias Sequencing Hermetically Sealed Module

schematic diagram 32 VDC POWER SUPPLY

Abstract: HMC-C020 HMC-C021
Contextual Info: HMC-C021 v01.0906 WIDEBAND POWER AMPLIFIER MODULE, 21 - 31 GHz CONNECTORIZED MODULES - AMPLIFIERS 9 Features Gain: 15 dB @ 27 GHz P1dB Output Power: +24 dBm @ 27 GHz Noise Figure: 5 dB @ 27 GHz Spurious-Free Operation ypical Applications Typical Regulated Supply and Bias Sequencing

Contextual Info: HMC-C021 v03.0310 WIDEBAND POWER AMPLIFIER MODULE, 21 - 31 GHz AMPLIFIERS 1 Features Gain: 15 dB @ 27 GHz P1dB Output Power: +24 dBm @ 27 GHz Noise Figure: 5 dB @ 27 GHz Spurious-Free Operation Typical Applications Regulated Supply and Bias Sequencing Hermetically Sealed Module

Contextual Info: HMC462 v00.0703 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC462 Wideband LNA is ideal for: Noise Figure: 2 dB @ 10 GHz • Telecom Infrastructure Gain: 15 dB • Microwave Radio & VSAT P1dB Output Power: +15 dBm @ 10 GHz

Contextual Info: HMC-C021 v00.0606 WIDEBAND POWER AMPLIFIER MODULE, 21 - 31 GHz AMPLIFIERS 1 Features Gain: 15 dB @ 27 GHz P1dB Output Power: +24 dBm @ 27 GHz Noise Figure: 5 dB @ 27 GHz Spurious-Free Operation Typical Applications Regulated Supply and Bias Sequencing Hermetically Sealed Module

PC2708T

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT «PC2708T 2.9 GHz MIDDLE POWER WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain 15 dB TYP. @ f = 1 GHz Excellent frequency response: 2.9 Ghz TYP. @ 3 dB down below the gain at 0.1 GHz