15 GHZ HIGH POWER AMPLIFIER Search Results

Contextual Info: 15 dBm P1dB, 500 MHz to 18 GHz, Medium Power Broadband Amplifier, 33 dB Gain, SMA TECHNICAL DATA SHEET PE15A3263 The PE15A3263 is a 15 dBm power amplifier designed for operation in the 0.5 GHz to 18 GHz frequency range. The amplifier utilizes high power devices that provide excellent linearity and high gain. High efficiency operation is achieved by using hybrid

S8851

Abstract: TOSHIBA MICROWAVE AMPLIFIER toshiba control code
Contextual Info: TOSHIBA S8851 MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 24 dBm at f = 15 GHz • High gain - G1dB = 8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

S8850A

Abstract: S8850 S-8850
Contextual Info: TOSHIBA S8850A MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 21.5 dBm at f = 15 GHz • High gain - G1dB = 9.0 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

S8855

Abstract: TOSHIBA MICROWAVE AMPLIFIER toshiba fet toshiba control code
Contextual Info: TOSHIBA S8855 MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 31.5 dBm at f = 15 GHz • High gain - G1dB = 6.5 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

toshiba fet

Abstract: S8853 toshiba control code
Contextual Info: TOSHIBA S8853 MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 28 dBm at f = 15 GHz • High gain - G1dB = 7 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

Contextual Info: Model # BXHF1083 High Frequency Microwave Amplifier Frequency Range: 5-15 GHz Features • High Frequency and Broad Bandwidth: 5-15 GHz • High Output Power: 26 dBm Typical • Laser Welded Housing for Ultimate Environmental Protection • Internal Voltage Regulator

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8855 Power GaAs FETs Chip Form Features • High power - P1dB = 31.5 dBm at f= 15 GHz • High gain - G idB = 6.5 dB a tf = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8850A Power GaAs FETs Chip Form Features • High power - pidB = 21.5 dBm a tf = 15 GHz • High gain - G-^g = 9.0 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8851 Power GaAs FETs Chip Form Features • High power - PidB = 24 dBm a tf = 15 GHz • High gain - G-|dB —8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

HMMC-5003

Abstract: agilent HMMC
Contextual Info: 4 GHz Wideband Preamplifier/Amplifier Technical Data HMMC-5003 Features • Frequency Range: DC – 4 GHz • Flat Response: ±0.75 dB 5 MHz – 4 GHz • High Gain: 11 dB • High Isolation: -37 dB • Return Loss: Input -15 dB Output -15 dB • High Power Output:

chip die npn transistor

Abstract: ma4t856
Contextual Info: Moderate Power High fT NPN Silicon Transistor MA4T856 Series V3.00 Package Outline Features • High Output Power - 16 dBm P1dB @ 1 GHz - 10 dBm P1dB @ 2 GHz • High Gain Bandwidth Product • 8-9 GHz fT • High Power Gain - |S21E|2 = 15 dB @ 1 GHz - |S21E|2 = 9 dB @ 2 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8853 Power GaAs FETs Chip Form Features • High power - P idB = 28 dBm at f= 15 GHz • High gain - GidB = 7 dB at f = 15 GHz • Suitable for Ku-Bar\d amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

Contextual Info: Moderate Power High fT NPN Silicon Transistor MP4T856 Series Package Outline Features • High Output Power - 16 dBm P1dB @ 1 GHz - 10 dBm P1dB @ 2 GHz • High Gain Bandwidth Product • 8-9 GHz fT • High Power Gain - |S21E|2 = 15 dB @ 1 GHz - |S21E|2 = 9 dB @ 2 GHz

Contextual Info: SLNA-180-30-35-SMA DATA SHEET 500 MHz to 18 GHz, Medium Power Broadband Amplifier with 15 dBm, 33 dB Gain and SMA SLNA-180-30-35-SMA is a 15 dBm power amplifier designed for operation in the 0.5 GHz to 18 GHz frequency range. The amplifier utilizes high power devices that

S8850A

Abstract: S8850 Microwave Semiconductor s88
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8850A TECHNICAL DATA FEATURES: • HIGH POWER P^cjB = 21.5dBm at f = 15 GHz ■ SUITABLE FOR Ku-BAND AMPLIFIER ■ HIGH GAIN G1dB = 9 . ° dB at f = 15 GHz ■ ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C

S8853

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8853 TECHNICAL DATA FEATURES: • ■ HIGH POWER P-jdB = 2 8 dBm at f = 15 GHz HIGH GAIN G1dB = 7 dB at f = 15 GHz ■ SUITABLE FOR Ku-BAND AMPLIFIER ■ ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C

S8851

Abstract: S885T
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8851 TECHNICAL DATA FEATURES: • HIGH POWER P^dB“ 24 dBm at f = 15 GHz ■ ■ HIGH GAIN G1dB = 8 dB ■ SUITABLE FOR Ku-BAND AMPLIFIER ION IMPLANTATION at f = 15 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25° C

S8855

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8855 TECHNICAL DATA FEATURES: • ■ HIGH POWER p1 d B ~ 31.5 dBm at f = 15 GHz HIGH GAIN G|dB = 6.5 dB at f = 15 GHz SUITABLE FOR Ku-BAND AMPLIFIER ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS8853-AS Power GaAs FETs Chip Form Features • High power - P1dB = 28 dBm at f = 15 GHz • High gain - G1de = 7 d B a t f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS8850A-AS Power GaAs FETs Chip Form Features • High power - P-idB = 21.5 dBm at f = 15 GHz • High gain - G1dB = 9 d B a t f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)

PC2708T

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT «PC2708T 2.9 GHz MIDDLE POWER WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain 15 dB TYP. @ f = 1 GHz Excellent frequency response: 2.9 Ghz TYP. @ 3 dB down below the gain at 0.1 GHz

AM42-0040

Abstract: CR-15
Contextual Info: GaAs MMIC VSAT Power Amplifier, 2W, 5.9-6.4 GHz AM42-0040 AM42-0040 GaAs MMIC VSAT Power Amplifier, 2W 5.9 - 6.4 GHz Features • • • • • CR-15 High Linear Gain: 30 dB Typ. High Saturated Output Power: +33 dBm Typ. High Power Added Efficiency: 26% Typ.

AM42-0039

Abstract: CR-15
Contextual Info: GaAs MMIC VSAT Power Amplifier, 2W, 6.40-7.025 GHz AM42-0039 AM42-0039 GaAs MMIC VSAT Power Amplifier, 2W 6.40 - 7.025 GHz Features • • • • • CR-15 High Linear Gain: 30 dB Typ. High Saturated Output Power: +33 dBm Typ. High Power Added Efficiency: 22% Typ.

AM42-0041

Abstract: CR-15 IDS500
Contextual Info: GaAs MMIC VSAT Power Amplifier, 0.5W, 14.0-14.5 GHz AM42-0041 AM42-0041 GaAs MMIC VSAT Power Amplifier, 0.5W 14.0 - 14.5 GHz Features • • • • • CR-15 High Linear Gain: 28 dB Typ. High Saturated Output Power: +28 dBm Typ. High Power Added Efficiency: 22% Typ.