15 AMP 1000 VOLT DIODE Search Results

Contextual Info: OM6529SS OM653QSS INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance Low On-Voltage High Current Capability

12 VOLT 150 AMP smps

Abstract: OM6531SS OM6532SS
Contextual Info: OM6531SS OM6532SS INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • Two Isolated IGBTs In A Hermetic SIP Package • High Input Impedance • Low On-Voltage

S 170 MOSFET TRANSISTOR

Abstract: 100 Amp current 1300 volt diode OM6529SS
Contextual Info: OM6529SS OM653QSS INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Two Isolated IG BTs In A Hermetic SIP Package High Input Impedance Low On-Voltage High Current Capability

Contextual Info: OM6527SC OM6528SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE n in 1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • • • • • • • • Isolated IGBTs In A Hermetic Package High Input Impedance

OM6529SS

Abstract: OM6530SS
Contextual Info: OM6529SS OM6530SS INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • • • • • • • • Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance

OM6531SS

Abstract: OM6532SS
Contextual Info: OM6531SS OM6532SS INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • • • • • • • • Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance

UPS schematics

Abstract: 35 VOLT 3 AMP smps schematics OM6527SC OM6528SC
Contextual Info: OM6527SC OM6528SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • • • • • • • • Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage

IGBT 50 amp 1000 volt

Abstract: CQ-111 100 Amp current 1300 volt diode 12 VOLT 100 AMP smps IGBT 250 amp smps 12 volt OM9038SF OM9039SF 12 VOLT 150 AMP smps 150 VOLT 10 AMP smps
Contextual Info: OM9038SF OM9039SF H-BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 20 And 15 Amp IGBT Module With Soft Recovery Rectifier, H-Bridge Configuration FEATURES • • • • • • 12-Pin Hermetic Power Package Isolated Heat Sink Design

OM9038SF

Abstract: OM9039SF 12 VOLT 100 AMP smps diode v3e
Contextual Info: OM9038SF OM9039SF H-BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 20 And 15 Amp IGBT Module With Soft Recovery Rectifier, H-Bridge Configuration FEATURES • • • • • • 12-Pin Hermetic Power Package Isolated Heat Sink Design

Contextual Info: OM9038SF OM9039SF H-BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 20 And 15 Amp IGBT Module With Soft Recovery Rectifier, H-Bridge Configuration FEATURES • • • • • • 12-Pin Hermetic Power Package Isolated Heat Sink Design

SMD Diode S140

Abstract: transistor a 949 100 Amp current 1300 volt diode DIODE SMD S140 JMV1206S450T551 250 B 340 smd Transistor JMV0603S300T101 JMV0805S180T351 JMV0402S5R6T301 JMV1812
Contextual Info: MULTILAYER CHIP VARISTOR RoHS JMV S & E Series: SMD Surge Protection ü INTRODUCTION FEATURES Metal Oxide based chip varistors (JMVs) are used for transient voltage suppression. JMVs have non-linear voltage-current behavior, which is similar to that of Zener Diode. Each grain in

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability at 125°C Ultra Low Thermal Resistance

use igbt for 3 phase induction motor

Abstract: 3 phase brushless 400v
Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance

10 amp igbt 1000 volt

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance

15 amp 1000 Volt Diode

Abstract: 125OC
Contextual Info: SB039C015-0.5-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 0.5 Amp, 0.32VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

15 amp 1000 Volt Diode

Abstract: 125OC
Contextual Info: SB039C015-1-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 1 Amp, 0.35VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

125OC

Abstract: SB035C015 15 amp 1000 Volt Diode
Contextual Info: SB035C015 - 0.5-W-Ag Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 0.5 Amp, 0.33VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

125OC

Abstract: Schottky diode wafer
Contextual Info: SB035C015-1-W-Ag Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 1 Amp, 0.36VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

TF-10PC1UC

Abstract: glass fuse color code 100761 diode catalogue TF-18PC1UC thermal fuse color code chart 12077411 12110127 glass diode color codes junior power timer
Contextual Info: DILL BLOX MODULAR POWER DISTRIBUTION SYSTEMS PROVIDING SOLUTIONS FOR: POWER DISTRIBUTION DESIGNED FOR: FUSES CIRCUIT PROTECTION TERMINAL PROTECTION CIRCUIT BREAKERS RELAYS FLASHERS LIGHTS POWER TAPS DIODES CUSTOM COMPONENTS. Fargo Assembly of PA., Inc. 800 West Washington St. P.O. Box 550

TRS601

Contextual Info: 3869720 GENERAL DIODE CORF ¿3 GTS C 07C 00250 D 7- 33 -^/ _ mLaondacto%± GENERAL DIODE CORP ~ 07 DE | 3öb17aD DDDOaSD 0 100 Ea m e s Stre e t < 6 1 7 J Ï7 2 -7 5 2 0 F r a m in g h a m , M a ss a c h u se t ts 0 1 7 0 1 SILICON NPN - Power Transistors

MYXDS1200-15ABS

Abstract: silicon carbide
Contextual Info: Silicon Carbide Schottky Diode 1200 Volt 15 Amp Hermetic MYXDS1200-15ABS y r a in Product Overview Features Benefits • High voltage 1200V isolation in a small package outline • Essentially no switching losses • Higher efficiency • Reduction of heat sink requirements

15 amp 1000 Volt Diode

Abstract: 106C015-30 125OC um99
Contextual Info: SB157/106C015-30-W-Ag/Al Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 30 Amp, 0.38VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" or Cr-Al Suffix Al . Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage

125OC

Contextual Info: SB157/106C015-20-W-Ag/Al Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 20 Amp, 0.37VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" or Cr-Al Suffix Al . Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage