148 DIODE Search Results

LCIE 07 ATEX 0004 U

Abstract: 24vdc 2a smps EN61558-2-4 LCIE60058407-559419 tsp 090-124 ot 112 IEC60079-1 en61558 CSA-C22 16VDC
Contextual Info: INDUSTRIAL POWER SUPPLIES TSP-SERIES Operating Instructions ♦ TSP 070-112 ♦ TSP 090-124 ♦ TSP 090-124N ♦ TSP 140-112 ♦ TSP 180-124 ♦ TSP 360-124 ♦ TSP 600-124 ♦ TSP 090-148 ♦ TSP 180-148 ♦ TSP 360-148 ♦ TSP 600-148 Date: 28 March 2008

semikron skMt 132

Abstract: thyristor SKMT 132 semikron skmt SKNH 16/08 SKKT 162/16E SEMIKRON semikron skkt 162/ 12 diode 132 E semipack skkt semikron thyristor skkt 162 semikron skkt 132
Contextual Info: VRSM VRRM dv/ VDRM dt cr SEMIPACK 2 Thyristor / Diode Modules ITRMS (maximum value for continuous operation) 220 A 250 A 220 A 250 A ITAV (sin. 180; Tcase = 80 °C) V V V/µs 148 A 168 A 148 A 168 A 900 800 500 SKKT 132/08 D SKKT 162/08 D SKKH 132/08 D

Contextual Info: User's Guide SLVU751A – July 2012 – Revised June 2013 TPS55340EVM-148, 8V to 24V Input, 5V Output Flyback Evaluation Module This user’s guide contains information for the TPS55340EVM-148 evaluation module also called PWR148 as well as the TPS55340 DC/DC converter. The document includes the performance

thyristor t16

Abstract: thyristor t16 400
Contextual Info: se MIKRDN V rsm V rrm dv/ SEMIPACK 2 Thyristor / Diode Modules Itrms (maximum value for continuous operation V drm dt)cr 220 A 250 A 220 A 250 A V V/)iS 148 A 168 A 148 A 168 A SKKT SKKT SKKH SKKH 162/08 D Itav (sin. 180; Tcase = 80 °C) V 500 132/08 D

MD-148

Abstract: MDS-148
Contextual Info: MD- / MDS-148 Double-Balanced Mixer, 10 - 1500 MHz Features n n n n n n n n Rev. V4 FP-2 MD-148 Fully Hermetic Package 1 dB Compression Point: +5 dBm Conversion Loss: 6 dB Typical Midband LO-RF/LO-IF Isolation: 40 dB Typical Midband Impedance: 50 Ohms Nominal

MD-148

Abstract: MDS-148
Contextual Info: MD-/MDS-148 Double-Balanced Mixer, 10 - 1500 MHz Features V 4.00 FP-2 MD-148 Fully Hermetic Package 1 dB Compression Point: +5 dBm Conversion Loss: 6 dB Typical Midband LO-RF/LO-IF Isolation: 40 dB Typical Midband Impedance: 50 Ohms Nominal Maximum Input Power: 300 mW Max, Derated to 85°C

diode 148

Abstract: MD-148 MDS-148
Contextual Info: MD-/MDS-148 Double-Balanced Mixer, 10 - 1500 MHz Features V 3.00 FP-2 MD-148 Fully Hermetic Package 1 dB Compression Point: +5 dBm Conversion Loss: 6 dB Typical Midband LO-RF/LO-IF Isolation: 40 dB Typical Midband Impedance: 50 Ohms Nominal Maximum Input Power: 300 mW Max, Derated to 85°C

ADS1147

Abstract: fsc11 ADS1148 ADS1146 TSSOP-16 TSSOP-20 TSSOP-28
Contextual Info: ADS1146 ADS1147 ADS1148 AD S1 148 AD S1 147 AD S1 146 www.ti.com . SBAS453A – JULY 2009 – REVISED AUGUST 2009

SKKT 162/16E SEMIKRON

Abstract: semikron skkt 162/ 12/ D semikron skkt 132/ 14/ E semikron thyristor skkt 162 semikron skMt 132 semikron thyristor skkt 162/14E semikron skkt 132/ 16/ E semikron thyristor skkt 162/16e SKKT 105 / 12 E semikron thyristor skkt
Contextual Info: VRSM VRRM dv/dt cr VDRM V 900 V V/µs ITRMS (maximum values for continuous operation) 220 A 250 A 220 A 250 A 148 A ITAV (sin. 180; Tcase = 80 °C) 168 A 148 A 168 A SKKT SKKT SKKH SKKH 800 500 132/08 D 162/08 D 132/08 D 162/08 D 1300 1200 1000 132/12 E 162/12 E

74HC148

Abstract: 74LS148 54HC 74HC M54HC148 M74HC148
Contextual Info: S G S - T H O M S O N RäD IB©lllLll Trifi©liä[l SS M 54H C 148 M 74H C 148 8-TO-3 LINE PRIORITY ENCODER HIGH SPEED tpo = 16 ns (TYP. at VCc = 5V LOW POWER DISSIPATION Ice = 4 (MAX.) at TA = 25°C HIGH NOISE IMMUNITY V imih = VNil = 28% Vcc (MIN.) OUTPUT DRIVE CAPABILITY

KT-132

Abstract: skkt 40 12 3208A KT132 SKNH132 skkt162
Contextual Info: SEMIKRON V rsm V rrm V drm Itrms m axim um valu e s fo r continuous operation 220 A 250 A | 220 A | 250 A (dv/dt)cr Itav (sin. 18C ; Tease = 80 °C' ) 168 A 148 A 148 A V /jis 168 A V V SKKT SKKT SKKH SKKH 900 800 500 132/08 D 162/08 D 132/08 D 1 62/08 D

semikron skMt 132

Abstract: KT-132 semikron skkt 90 thyristor T-50
Contextual Info: s e m ik r o n Vrsm Vrrm dv/dt cr V drm V V V/|is Itrms (maximum values for continuous operation) I 250 A | 220 A | 250 A 220 A 148 A SKKT Itav (sin. 18C Tease = 80 °C') 168 A 148 A 168 A SKKT SKKH 800 500 132/08 D 162/08 D 132/08 D 162/08 D 1300 1200 1000

Contextual Info: LETTER SYMBOLS Based on I EC publication 148 _À_ LETTER SYMBOLS FOR RECTIFIER DIODES, THYRISTORS, TRIACS AND BREAKOVER DIODES LETTER SYMBOLS FOR CURRENTS, VOLTAGES AND POWERS Basic letters: — The basic letters to be used are:

pin diagram of ic 74ls148

Abstract: FUNCTIONAL APPLICATION OF 74LS148 74HC148
Contextual Info: Ä 7 M 54H C 148 M 74H C 148 S C S -T H O M S O N * 7# [lD g (ö [E[L[l Tr^©R!lö©i 8-TO-3 LINE PRIORITY ENCODER • HIGH SPEED tp0 = 16 ns (TYP.) at VCc = 5V ■ LOW POWER DISSIPATION |c c = 4 iiA (MAX.) at Ta = 25°C ■ HIGH NOISE IMMUNITY VNIH = VN|L = 28% VCC (MIN.)

electrical symbols

Contextual Info: Philips Semiconductors Letter Symbols General • Instantaneous total values, e.g. iB LETTER SYMBOLS • Average total values, e.g. IB AV The letter symbols for transistors and signal diodes detailed in this section are based on IEC publication number 148.

RLT1550_100G

Contextual Info: RLT1550-100G TECHNICAL DATA Infrared Laser Diode Structure: GaInAsP/InP, SQW structure Lasing wavelength: typ. 1580 nm, multi mode Max. optical power: 100 mW Package: 9 mm SOT-148 PIN CONNECTION: 1) Laserdiode cathode 2) Laserdiode anode and photodiode cathode

Contextual Info: Philips Semiconductors Power Biplar Transistors General LETTER SYMBOLS • Instantaneous total values, e.g. is The letter sym bols for transistors and signal diodes detailed in this section are based on IEC publication number 148. • Peak total values, e.g. Ibm

RLT980_250GS

Abstract: RLT980-250GS
Contextual Info: RLT980-250GS TECHNICAL DATA High Power Infrared Laser Diode Lasing mode structure: single mode Lasing wavelength: typ. 980 nm Max. optical power: 250 mW Package: 9 mm SOT-148 PIN CONNECTION: 1) Laserdiode anode 2) Laserdiode cathode and photodiode cathode

RLT980_100GS

Contextual Info: RLT980-100GS TECHNICAL DATA High Power Infrared Laser Diode Lasing mode structure: single mode Lasing wavelength: typ. 980 nm Max. optical power: 100 mW Package: 9 mm SOT-148 PIN CONNECTION: 1) Laserdiode anode 2) Laserdiode cathode and photodiode cathode

RLT1060M_2WG

Contextual Info: RLT1060M-2WG TECHNICAL DATA High Power Infrared Laser Diode Lasing mode structure: multi mode Lasing wavelength: typ. 1060 nm Max. optical power: 1.3 W Package: 9 mm SOT-148 PIN CONNECTION: 1) Laserdiode cathode 2) Laserdiode anode and photodiode cathode

RLT915_150GS

Contextual Info: RLT915-150GS TECHNICAL DATA High Power Infrared Laser Diode Lasing mode structure: single mode Lasing wavelength: typ. 915 nm Max. optical power: 150 mW Package: 9 mm SOT-148 PIN CONNECTION: 1) Laserdiode anode 2) Laserdiode cathode and photodiode cathode

670NM Laser-Diode

Abstract: DL-3148-033
Contextual Info: Ordering number : EN5860 Red Laser Diode D L -3 148-033 Index Guided AIGalnP Laser Diode Overview Package Dimensions The DL-3148-033 is index guided 635 nm Typ. AIGalnP laser diode with low threshold current and high operating temperature. The low threshold

OPL126A

Contextual Info: Issued July 1985 F4866 High voltage opto-isolator Stocknumber 302-148 The RS OPL126A opto-isolator consists of a GaAsP light emitting diode optically coupled to an NPN silicon phototransistor. The form of construction provides 10kV isolation between input and output, with a minimum

RLT1060_350G

Contextual Info: RLT1060-350G TECHNICAL DATA High Power Infrared Laser Diode Lasing wavelength: 1064 nm, typ. Max. optical power: 350 mW Package: 9 mm SOT-148 PIN CONNECTION: 1) Laserdiode anode 2) Laserdiode cathode and photodiode cathode 3) Photodiode anode Optical-Electrical Characteristics (Tc = 25°C)