147 B TRANSISTOR Search Results

Contextual Info: SEMELAB PLC bPE D • 8133167 QQQOblO 147 H S U L B ■■■I _ T '-'i'V M = rr= MOSPOWER4 “ I G B T m i ” SEME LAB SML65G100BN 1000V 65A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol ^CES All Ratings: T c = 25°C unless otherwise specified.

Contextual Info: OP-147 P M i UNITY-GAIN STABLE, HIGH-SPEED OPERATIONAL AMPLIFIER ADVANCE PRODUCT INFORMATION FEATURES V ery H igh S lew R a t e . 300V /^s Typ . 4 5 M H z Typ High G a in -B a n d w id th

75150

Abstract: MA3019 A726 darlington pair transistor 147 B transistor MA3046 Transistor Array a3045 MA739 50 5G
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE 147 MA3019 146 mA3039 l+ p l r t [*i t 1 9 11 12 10 *• 9 SUBSTRATE 148 150 MA1489, mA1489A 149 MA1488 mA739 VCC+ [14 IN A £ 3 VCC ^ IN D 13 RESPONSE pCONTROL A IN D1 10 IN C1 ^ IN C OUT B £ 7 GND^ ■^i RESPONSE

EL2006ACG

Abstract: EL2006AG EL2006C EL2006CG EL2006L LH0032
Contextual Info: EL2006/EL2006A SÖE D • 3 1 2 ^ 5 5 7 0 DD2 D3 b 147 H E L A elantec MSN PERFORMANCEAMAlDfl INTSJRAfEOCIRCUITS EL2006/EL2006A 'r ' ^ - High Gain F astF E T In put Op Amp ELANTEC INC F e a tu r e s G en era l D e sc r ip tio n • • • • • • •

Contextual Info: w w w .fa irc h ild s e m i.c o m S E M I C O N D U C T O R tm T D C 1 147 M o n o lith ic Video A/D C o n v e rte r 7 - B i t , 15 Msps Features Description • • • • • • • • The TDC1147 is a 7-bit flash analog-to-digital converter which has no pipeline delay between sampling and valid

Contextual Info: F A IR C H IL D s e m ic o n d u c t o r w w w .fa irc h ild s e m i.c o m tm T D C 1 147 M o n o l i t h i c V i d e o A/D C o n v e r t e r 7 - B i t , 15 Msps Features Description • • • • • • • • The TDC1147 is a 7-bit flash analog-to-digital converter

tip141

Abstract: TIP140 tip145 TIP142 TIPI42
Contextual Info: SGS-THOMSON «itmitmFl «! TIP140/141/142 TIP145/146/147 CO M PLEM EN T DARLINGTON TRANSISTORS • TIP141, TIP142, TIP145 AND TIP147 ARE SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTIPARALLEL

Contextual Info: Zjï SGS-THOMSON ¡[LieraMe TIP140/141/142 TIPI 45/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . TIP141, TIP142, TIP145 AND TIP147 ARE SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION

SC1741

Abstract: 2SD2172 gy-80 DTA144EF DTC123JF DTA143ZF 2sc2062c DTD143EF DTD114EF DTC144EL
Contextual Info: S -y y y X £ /Transistors h ^ > y ^ ^ S f nnp l C O i'T i975^Â> e h ^ v ^ r o n u g i i a f é L S : u f c ^ , SiÎD0n ^ iC Î, / : - a r ii? ÎÇ l; ÎD ^ | lr o c r ^ ig Î5 f e l U L , Ä S l í J f A í í ' r y O W r t ik • SPT 4 ± 0 .2 2 .0 ± 0 .2

TIP142

Abstract: tip141.142 TIP147 morocco tip142/147 IP147 tip142 tip147 TIP146 IP142 TIP147 TIP141
Contextual Info: TIP141/142 TIP146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP141and TIP142 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in TO-218 plastic

TIP142

Abstract: TIP147 tip141 morocco tip142/147 TIP147 morocco TIP141 TIP142 morocco TIP140 TIP145 TIP146
Contextual Info: TIP140/141/142 TIP145/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ TIP141, TIP142, TIP145 AND TIP147 ARE STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL

TIP142

Abstract: TIP141 TIP147 TIP140 tip142/147 TIP145 TIP146 SGS-Thomson TIP147 morocco tip147 sgs-thomson
Contextual Info: TIP140/141/142 TIP145/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ TIP141, TIP142, TIP145 AND TIP147 ARE SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL

TIP142

Abstract: TIP142 morocco TIP147 morocco TIP140 TIP141 TIP147 TIP147 TO-218 TIP145 TIP146
Contextual Info: TIP140/141/142 TIP145/146/147  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ TIP141, TIP142, TIP145 AND TIP147 ARE STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL

Contextual Info: TIP145/146/147 TIP145/146/147 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. • Industrial Use • Complement to TIP140/141/142 1 PNP Epitaxial Silicon Darlington Transistor

p 945

Abstract: AN1294 PD57002 PD57002S 0918 158 BTS 132 SMD
Contextual Info: PD57002 PD57002S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 15 dB gain @ 960 MHz / 28 V • NEW RF PLASTIC PACKAGE PowerSO-10RF

tip142 equivalent

Abstract: TIP142 tip147 transistor TIP140 TIP141 TIP145 TIP146 TIP147 tip146 equivalent
Contextual Info: TIP145/146/147 TIP145/146/147 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. • Industrial Use • Complement to TIP140/141/142 TO-3P 1 PNP Epitaxial Silicon Darlington Transistor

2SC1253

Abstract: E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733
Contextual Info: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH PRO DU CT: fr = 2.2 GHz The NE740 series of NPN silicon transistors is designed for

2SC1253

Abstract: 2SC1251 NEC k 2134 transistor NE74000 NE74014 NE74020 NE90115 CTO-39 2143E 1321E12
Contextual Info: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D 7 z ll- â S ' NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR DESCRIPTION AND APPLICATIONS FEATURES The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent in­

Transistor C G 774 6-1

Abstract: C G 774 6-1 1041T060
Contextual Info: I MOTOROLA SC XSTRS/R F 4bE » • b3b?2SM 00=14722 T -3 MOTOROLA 3 ' 0 T ■flOTb 5 ■ I SEMICONDUCTOR I TECHNICAL DATA The RF Line HIGH FREQUEN CY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICO N designed specifically for broadband applications requiring low

3N123

Abstract: TELEDYNE CRYSTALONICS 3N136 VE2B
Contextual Info: « LOW COST SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTOR GEOMETRY 450, PG. 59 E L E C T R IC A L D A T A ABSOÎ.UTE M AXIM U M RATING PARAMETER SYMBOL 3N123 UNITS Collector to Base Voltage BV cbo 30 V Emitter 1 to Base Voltage BV e ì BO 25 V

sot-23 MARKING CODE ZA

Abstract: sot-23 CODE 41 bfs17p mc
Contextual Info: NPN Silicon RF Transistor BFS17P • For broadband amplifiers up to 1 G H z at collector currents from 1 to 20 mA. E C E C C -typ e available: C E C C 50002/262. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code

AN1294

Abstract: PD57002 PD57002S BTS 472 E 0927 TRANSISTOR
Contextual Info: PD57002 PD57002S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 15 dB gain @ 960 MHz / 28 V • NEW RF PLASTIC PACKAGE PowerSO-10RF

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

NS 8002 1151

Abstract: TO-66 CASE
Contextual Info: M O T O R O L A SC XST RS/ R F EbE D b 3b 7E 5 4 G G m 4 3 4 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M JM 3792 DM0 Discrete Military Products Suffixes: HX, H X V m in t PIMP Silicon Pow er Transistor Processed per MIL-S-19500/379 . designed for medium-speed switching and amplifier applications