147 B TRANSISTOR Search Results

75150

Abstract: MA3019 A726 darlington pair transistor 147 B transistor MA3046 Transistor Array a3045 MA739 50 5G
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE 147 MA3019 146 mA3039 l+ p l r t [*i t 1 9 11 12 10 *• 9 SUBSTRATE 148 150 MA1489, mA1489A 149 MA1488 mA739 VCC+ [14 IN A £ 3 VCC ^ IN D 13 RESPONSE pCONTROL A IN D1 10 IN C1 ^ IN C OUT B £ 7 GND^ ■^i RESPONSE

Contextual Info: F A IR C H IL D s e m ic o n d u c t o r w w w .fa irc h ild s e m i.c o m tm T D C 1 147 M o n o l i t h i c V i d e o A/D C o n v e r t e r 7 - B i t , 15 Msps Features Description • • • • • • • • The TDC1147 is a 7-bit flash analog-to-digital converter

Contextual Info: Zjï SGS-THOMSON ¡[LieraMe TIP140/141/142 TIPI 45/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . TIP141, TIP142, TIP145 AND TIP147 ARE SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION

TIP142

Abstract: TIP147 tip141 morocco tip142/147 TIP147 morocco TIP141 TIP142 morocco TIP140 TIP145 TIP146
Contextual Info: TIP140/141/142 TIP145/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ TIP141, TIP142, TIP145 AND TIP147 ARE STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL

TIP142

Abstract: TIP141 TIP147 TIP140 tip142/147 TIP145 TIP146 SGS-Thomson TIP147 morocco tip147 sgs-thomson
Contextual Info: TIP140/141/142 TIP145/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ TIP141, TIP142, TIP145 AND TIP147 ARE SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL

Contextual Info: TIP145/146/147 TIP145/146/147 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. • Industrial Use • Complement to TIP140/141/142 1 PNP Epitaxial Silicon Darlington Transistor

2SC1253

Abstract: E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733
Contextual Info: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH PRO DU CT: fr = 2.2 GHz The NE740 series of NPN silicon transistors is designed for

3N123

Abstract: TELEDYNE CRYSTALONICS 3N136 VE2B
Contextual Info: « LOW COST SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTOR GEOMETRY 450, PG. 59 E L E C T R IC A L D A T A ABSOÎ.UTE M AXIM U M RATING PARAMETER SYMBOL 3N123 UNITS Collector to Base Voltage BV cbo 30 V Emitter 1 to Base Voltage BV e ì BO 25 V

AN1294

Abstract: PD57002 PD57002S BTS 472 E 0927 TRANSISTOR
Contextual Info: PD57002 PD57002S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 15 dB gain @ 960 MHz / 28 V • NEW RF PLASTIC PACKAGE PowerSO-10RF

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

PD57002

Abstract: PD57002S AN1294 0137 0904 907 TRANSISTOR smd
Contextual Info: PD57002 PD57002S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 15 dB gain @ 960 MHz / 28 V • NEW RF PLASTIC PACKAGE

Contextual Info: 32E D • Ô S 3 b 3 2 Q Q ü l 7 QSb 0 H S I P . N P N Silicon RF Transistor BFS 17P S I E M E N S / SPCL-, S E M I C O N D S r ~ 31 _ • For broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. 6 CECC-type available: CECC 50002/262.

2N5114

Abstract: 2N5115 field effect transistors TELEDYNE CRYSTALONICS
Contextual Info: SWITCHING 2N5114 2N5115 P-CHANNEL FIELD EFFECT TRANSISTORS G E O M E T R Y 4 60, PG. 60 For Analog Switch, Commutators and Choppers ABSOLUTE M AXIM UM RATINGS PAR A M E TE R SYM BOL MAX. U N IT Gate to Drain Voltage BVgdo 30 V Gate to Source Voltage B V gso

ALG TRANSISTOR

Abstract: 2N5116 Crystalonics teledyne transistor
Contextual Info: SWITCHING 2N5116 P-CHANNEL FIELD EFFECT TRANSISTOR G E O M E T R Y 460, PG. 60 TO-18 Package FOR ANALOG SWITCHES, COMMUTATORS AND CHOPPERS 0.209 0.230 QJZ8D|a - A B S O LU TE M A X IM U M R A T IN G S P AR A M E TE R 0.195 S YM BO L 2N5116 U N IT Gate to Drain Voltage

PD57002-E

Abstract: BTS 132 SMD PD57002S PD57002S-E AN1294 JESD97 PD57002
Contextual Info: PD57002-E PD57002S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 2W with 15dB gain @ 960MHz / 28V ■ New RF plastic package

tip 142

Abstract: TIP142 TIP 147 TIP142 TIP147 P140 P145 TIP140 TIP141 TIP145 TIP146
Contextual Info: S A N Y O SEMICONDUCTOR NPN TIP140 TIP141 TIP142 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS PNP TIP145 TIP146 TIP147 60-80-100 VOLTS, 10 AMPERE HIGH CURRENT GAIN hFE = 4000 typ. @3V, 5A LOW SATURATION VOLTAGE V c e SAT = 1.0V typ. @ 5A MONOLITHIC CONSTRUCTION WITH BUILT-IN

2N2432A

Abstract: JAN-2N2432A 2N2432 2N4138 JAN-2N2432
Contextual Info: M I L IT A R Y APPROVED LOW LEVEL - HIGH SPEED JAN-2N2432 JAN-2N2432A 2N4138 SILICON EP ITA XIAL JUNCTION NPN SWITCHING TRANSISTORS A V A IL A B L E AS JA N -T X AND J A N -T X -V GEOMETRY 41, PG. 57 ELECTRICAL D A TA ABSOLUTE M AXIM UM RATINGS PARAM ETER

NEC 41-A 002

Abstract: NE333 NE33387 ne33353 NE33300 NE33353B NE33353E
Contextual Info: NEC/ CALIFORNIA NEC SbE T> m 1,427414 0GQE3a2 IT I HNECC NE33300 NE33353E NE33353B NE33387 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 450 mW LINEAR POWER OUTPUT at 2 GHz Com m on-Em ilter The NE333 series o f NPN silico n transistors Is designed for

2n6278

Abstract: 2N6274 2N6281 2n6276 IC 4071 IC617 2N6261 2N6279
Contextual Info: söE » TELEDYNE COMPONENTS • T^ss-tf fi^iTbag aoübsa^ b ■ NPN POWER TRANSISTORS 2N6274 thru 2N6281 50 AMP SWITCHING GEOMETRY 512 1250 W. Continuous Power 1VCEO sus to 150 V. TO -63 TO-3 (.060 Lead) t 460 «6 J i MAXIMUM RATINGS PARAMETER Coflector-Emitter Vottage

to48c

Abstract: IC LA 4138 TO-48C LA 4138 2N2432A TELEDYNE
Contextual Info: TELEDYNE COMPONENTS aaE T - s r - i : 0T17bG2 GQObSfiH D D M ILITARY APPROVED LOW LEVEL - HIGH SPEED *2N2432 ‘ 2N2432A 2N4138 SILICON E PITA XIA L JUNCTION NPN SWITCHING TRANSISTORS * AVAILABLE AS JAN, JAN-TX, JAN-TXV, JAN-S GEOMETRY 485 E LEC T R IC A L DATA

3N131

Abstract: 3N129 3N132 CEE 32A 3N123 3N130 3N133 3N136 teledyne crystalonics
Contextual Info: « • • • • 3N129 3N130 3N131 3N132 3N133 PREMIUM PERFORMANCE LOWree sat SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTORS G E O M E T R Y 4 5 0 , PG . 59 ULTRA LOW ree (sat), 8 Ohms TYP. LOW Ceb & C«., 2.5 pfd TYP. LOW LEA KA G E, 0.5 nA MAX.

TIP142TU

Abstract: TIP141LTU tip140 equivalent
Contextual Info: TIP140/141/142 TIP140/141/142 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145/146/147 TO-3P 1 NPN Epitaxial Silicon Darlington Transistor

Contextual Info: PNP EPITAXIAL TIP145/146/ 147 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN M INh FE = 1000 @ V CE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE T O -3 P • C o m p lem en t to T IP 1 4 0 /1 4 1 /1 4 2

2N6550

Abstract: ultra low igss pA AAHB low igss 2N6550/CM860
Contextual Info: ULTRA LOW NOISE h â 2N6550 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR r • GEOMETRY 424, PG. 58 ¿ 3 0 MAX The 2N 6550 is a high, Jn/lD lo w noise ju n c tio n F.E.T. fo r lo w level a m p lifie r use. The min. gm o f 25,000 ^imho assures a voltage gain o f 25 m in. w ith a 1K