1462, TRANSISTOR Search Results

RFL4N12

Abstract: RFL4N15 VDS-100 92CS-37555
Contextual Info: Standard Power MOSFETs RFL4N12, RFL4N15 File N um ber 1462 N-Channel Enhancerrienlt-Mode Power Field-Effect Transistors 4 A, 120 and 150 V rD s on : 0.40 Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds ■ Linear transfer characteristics

2SC3735

Contextual Info: NEC ELECTRON DEVICE / / SILICON TRANSISTOR - _ _ _ . _ _ 2S A 1462 HIGH SPEED SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in millimeters 2 - 8 ± Q -2 _ :_ 1.5 om t E3 -b i • High Speed Switching : t o n ^9 .0 n s TYP.

ECB1Q503L

Abstract: MAX618 MAX618EEE MAX618EVKIT MAX618EEE T
Contextual Info: 19-1462; Rev 0; 6/99 NUAL KIT MA ATION U EET L H A S V A E T WS DA O L L O F 28V, PWM, Step-Up DC-DC Converter The MAX618 CMOS, PWM, step-up DC-DC converter generates output voltages up to 28V and accepts inputs from +3V to +28V. An internal 2A, 0.3Ω switch

ECB1Q503L

Abstract: MAX618 MAX618EEE MAX618EVKIT
Contextual Info: 19-1462; Rev 0; 6/99 KIT ATION EVALU E L B AVAILA 28V, PWM, Step-Up DC-DC Converter The MAX618 CMOS, PWM, step-up DC-DC converter generates output voltages up to 28V and accepts inputs from +3V to +28V. An internal 2A, 0.3Ω switch eliminates the need for external power MOSFETs while

MAX618

Abstract: MAX618EEE MAX618EVKIT
Contextual Info: 19-1462; Rev 0; 6/99 NUAL KIT MA ATION U EET L H A S V A E T WS DA O L L O F 28V, PWM, Step-Up DC-DC Converter The MAX618 CMOS, PWM, step-up DC-DC converter generates output voltages up to 28V and accepts inputs from +3V to +28V. An internal 2A, 0.3Ω switch

1462, TRANSISTOR

Abstract: C60H
Contextual Info: » | O T fC # T jS 6 f I f f « 140 C o m m e rc e D rive Montgomeryville. PA 1893S-1013 Te|. 215 631 -9840 _ ^ ^ ^ S D 1 4 62 RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C . • ■ . ■ . « « CLASS C TRANSISTOR FREQUENCY 400MHz VOLTAG E 28V POWER OUT

9816A

Abstract: IRFV360 K11S
Contextual Info: Data Sheet No. PD-9.816A INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFV36Q :n N-CHANNEL 400 Volt, 0.20 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Part Number BV q s s RDS on

3733

Abstract: imo 3 sd1090 2n5635 4l stud SD 1470 TQ-60 2N5016 2N5090
Contextual Info: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type Package PIN SD # 2N 3866 2N 5090

2SC2373

Abstract: m0spec
Contextual Info: ÆàMOSPEC NPN SILICON POWER TRANSISTORS NPN .specifically designed for use in horizontal deflection output for BAA/ TV applications 2SC2373 FEATURES: * Low Collector-Emitter Saturation Voltage 7.5 AMPERE SILICON POWER TRANASISTORS 100 VOLTS 40 WATTS VCE satf 1-5V(Max @ Ic=5 0A,Ib=0.5A

2sb772 TO92

Abstract: 2SB772
Contextual Info: 2SB772/2SB772S PNP Epitaxial Silicon Transistor Semiconductor AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING • Complement to 2SD882 TO-92 ABSOLUTE MAXIMUM RATINGS ITa = 25 *C1 Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Bias Voltage

Contextual Info: l i Æ r ÿ ^ ^ n r^L^jrtL j ì l mrtLHS I n f C l U S c f f l l a warn J j j " T T f •“ ■" g 140 Com merce Drive Montgomeryvìlle. PA 18936-1013 Tei; 215 631-9840 RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C CLAS3 C TRANSÌSTOR FREQUENCY -100 MHz

Hall-Effect-Sensor

Abstract: marking BOJ US3881 US3881EUA US3881SUA US3881UA MARKING z57 75 2c s 0.41 5
Contextual Info: fa US3881 CM OS C hopper Stabilized, H all-Effect Sensor Latch 2.2V-18V Semiconductor Features □ □ □ □ □ □ a Optimized for BCD Motor Applications Operating Voltage Range: 2.2V to 18V CMOS Device for Optimal Stability Chopper Stabilized: No Amplifier Offset

482 transistor

Abstract: transistor f 482
Contextual Info: SIEMENS BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. • ¿r= 8G H z F = 1.2dB at 900MHz • Two galvanic internal isolated XL Transistors in one package "p H ETE" a ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: Semiconductor US3881 CMOS Chopper Stabilized, Hall-Effect Sensor Latch 2.2V-18V Features □ □ □ □ □ □ □ Optimized for BCD Motor Applications Operating Voltage Range: 2.2V to 18V CM OS Device for Optimal Stability Chopper Stabilized: No Amplifier Offset

power amplifier IC 4440

Abstract: BFR99 t 3866 transistor BFR99A CE-28 bf 225 vhf/SRF 3733 t 3866 power transistor tic 1060 BFR38
Contextual Info: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type PIN Package Config. (V) pout min

Contextual Info: Product specification Philips Semiconductors PowerMOS transistors PHP4N40E, PHB4N40E Avalanche energy SYMBOL FEATURES • • • • • QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics

A720 transistor

Abstract: AN7205 AN7421 transistor A720 AN7420 AN7024 AN7220 AN7203 AN7148 AN7108
Contextual Info: Application Block Diagrams • Audio Applications 3 Headphone Stereo/Microcassette/Radio (Headphone Stereo (3V, 1.5V) Antenna A A N 7 2 3 5 S ( 5 V ) ^ Mote) T he tran sistors and diodes listed below can be used for the peripheral circuits in this Y r block diagram

TRANSISTOR D 1765

Contextual Info: Data Sheet No. PD-9.816A INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFV36Q N-CHANNEL Product Summary 400 Volt, 0.20 Ohm HEXFET The HEXFET® technology is the key to International Part Number BVpss Rectifier’s advanced line of power M O S FE T transistors.

KN19

Contextual Info: GFS2430A GFS2430A GFS2430A 3 2 X 4 CAN WITH MASK GENERAL DESCRIPTION : THE GFS2430A MEGAFUNCTION IS A 32-WORD BY 4-filT CONTENT ADDRESSABLE MEMORY CAM . THIS MEGAFUNCTION IS FUNCTIONALLY IDENTICAL TO THE FAIRCHILD 100142 EXCEPT THAT IT HAS 32 WORDS INSTEAD OF FOUR. FOR A DETAILED FUNCTIONAL DESCRIPTION, SEE

2SC1451

Abstract: 2SA773 2SA772 TBB 1458 1466 HO TBB 1458 p 2sa773* Transistor
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: m ULN2803/ULN2804 High-Voltage, High-Current Darlington Arrays 'Semiconductor PBSCRIPTIOK 1 rT>he ULN2803/2804 series are high-voltage, high-current pairs. All units feature integral clamp diodes for switching darington arrays comprised of eight NPN darington

Contextual Info: S GS-TH O M SO N ?1C D î'ü S T E B ? ; ODGMfitiO - 0 | rT " 3 3 - 6 f THOMSON SEMICONDUCTORS wideband VHF - UHF class C for ECM and radio links applications V cc PACKAGE TYPE ^out Frequency m in range M H z CONFIG. (V ) • (W) 2N 3866 2N 5090 2N 5635

P2QFP100-GH-1420

Abstract: O2-A2 CQFP44 USART 8251 interfacing with 8051 microcontroller CQFP100 microprocessors interface 8086 to 8251 full 18*16 barrel shifter design P4QFP100-GH-1420 CLA90000 transistors for oscillators
Contextual Info: CLA90000 Series High Density CMOS Gate Arrays DS5500 ISSUE 2.0 INTRODUCTION BENEFITS The CLA90000 family of gate arrays from Zarlink Semiconductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This

F3SP-B1P

Abstract: A1627 humidity sensor philips H1 F39-JC5B F39JC10A F39-JC7B F39-JC7A F39-JC3B-L F39-JC3B F39-JCR2B
Contextual Info: Short-range Safety Light Curtain Type 4 F3SN-A@SS CSM_F3SN-A_SS_DS_E_3_1 Greater resistance to external light interference. Significantly less interference with other sensors. • Interference reduced both between Sensors of the same type and Sensors of different types.