1408588 Search Results

i386SX

Abstract: design ideas i486sx nec floppy circuit pc mouse drawing V800
Contextual Info: User’s Manual idea-L Screen Editor Introduction MS-Windows Based Ver. V3.30 Document No. U10094EJ2V0UM00 2nd edition Date Published August 1997 Printed in Japan 1997 [MEMO] * IBM-PC is a trademark of International Business Machines Corporation. * MS-DOS and MS-Windows are either registered trademarks or trademarks of Microsoft Corporation in the

Contextual Info: Preliminary Data Sheet NX5522 Series LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE R08DS0029EJ0100 Rev.1.00 Oct 06, 2010 DESCRIPTION The NX5522 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are

Contextual Info: PreliminaryData Sheet PD5754T7A R09DS0012EJ0100 Rev.1.00 Dec 22, 2010 SiGe/CMOS Integrated Circuit 4 x 2 IF Switch Matrix with Gain and Tone/Voltage Controller FEATURES • 4 independent IF channels, integral switching to channel input to either channel output

TH05-3H103F

Contextual Info: Datasheet R2A20055NS R03DS0074EJ0100 Rev.1.00 May 7, 2013 Lithium-Ion Battery Charger IC Description The R2A20055NS is a semiconductor integrated circuit designed for Lithium-ion battery chargers at spacelimited portable applications. The R2A20055NS simply controls to charge a battery with a small number of

Contextual Info: Preliminary Data Sheet PA2811T1L R07DS0191EJ0100 Rev.1.00 Jan 11, 2011 MOS FIELD EFFECT TRANSISTOR Description The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.

Contextual Info: Preliminary Datasheet TBB1005 R07DS0315EJ1000 Previous: REJ03G0843-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet RJK0243DNS 25V, 25A, 9.6mΩmax. N Channel Power MOS FET High Speed Power Switching R07DS1074EJ0110 Rev1.10 Mar 28, 2013 Features • • • • • • • Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting

Contextual Info: Preliminary Data Sheet PA2561T1H R07DS0006EJ0100 Rev.1.00 Jul 08, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2561 is Dual N-channel MOSFETs designed for back light inverters and power management applications of portable equipments. Dual N-channel MOSFETs are assembled in one package, to contribute minimize the equipments.

TO-220FL

Contextual Info: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ

Contextual Info: Preliminary Datasheet TBB1012 R07DS0317EJ0300 Previous: REJ03G1245-0200 Rev.3.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet RJK0348DPA 30V, 50A, 2.5m max. N Channel Power MOS FET High Speed Power Switching R07DS0912EJ0500 Rev.5.00 Mar 19, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

Contextual Info: R32C/118 Group Datasheet Datasheet R32C/118 Group RENESAS MCU 1. R01DS0065EJ0120 Rev.1.20 Feb 6, 2013 Overview 1.1 Features The M16C Family offers a robust platform of 32-/16-bit CISC microcomputers MCUs featuring high ROM code efficiency, extensive EMI/EMS noise immunity, ultra-low power consumption, high-speed processing

RJK0652DPB

Contextual Info: Preliminary Datasheet RJK0652DPB 60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching R07DS0077EJ0200 Rev.2.00 Apr 09, 2013 Features •     Low on-resistance RDS on = 5.5 m typ. (at VGS = 10 V)  Pb-free  Halogen-free

RJK03M2DPA

Contextual Info: Preliminary Datasheet RJK03M2DPA 30V, 45A, 2.8mΩmax. N Channel Power MOS FET High Speed Power Switching R07DS0766EJ0200 Rev.2.00 Feb 12, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

Contextual Info: RMLV0408E Series 4Mb Advanced LPSRAM 512-kword x 8-bit R10DS0206EJ0100 Rev.1.00 2014.2.27 Description The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524,288-word × 8-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher

Contextual Info: Data Sheet HAT1111C R07DS1177EJ0700 Previous: REJ03G0446-0600 Rev.7.00 Mar 19, 2014 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 245 mΩ typ. (at VGS = –10 V) • Low drive current. • 4.5 V gate drive devices. • High density mounting

Contextual Info: Preliminary Datasheet RJK1055DPB 100V, 23A, 17m max. Silicon N Channel Power MOS FET Power Switching R07DS1058EJ0200 Previous: REJ03G1887-0100 Rev.2.00 Apr 11, 2013 Features • High speed switching  Low drive current  Low on-resistance RDS(on) = 13 m typ. (at VGS = 10 V)

R5F6411FDFN

Contextual Info: R32C/111 Group Datasheet Datasheet R32C/111 Group RENESAS MCU 1. R01DS0062EJ0130 Rev.1.30 Mar 3, 2014 Overview 1.1 Features The M16C Family offers a robust platform of 32-/16-bit CISC microcomputers MCUs featuring high ROM code efficiency, extensive EMI/EMS noise immunity, ultra-low power consumption, high-speed processing

Contextual Info: Data Sheet HAT2205C R07DS1181EJ0500 Previous: REJ03G1237-0400 Rev.5.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS (on) = 38 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 1.8 V gate drive devices.

Contextual Info: APPLICATION NOTE R20AN0264EJ0100 Integrated Development Environment e2 studio e2 studio with Subversion and plug-in Subversive Rev.1.00 Oct 16, 2013 Summary Subversion SVN is an open-source version control system. SVN allows developers to share their projects on

Contextual Info: TPS-1 User’s Manual: Hardware RENESAS ASSP Ethernet Controller for PROFINET IO Devices All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

Contextual Info: R32C/116 Group Datasheet Datasheet R32C/116 Group RENESAS MCU 1. R01DS0063EJ0120 Rev.1.20 Feb 6, 2013 Overview 1.1 Features The M16C Family offers a robust platform of 32-/16-bit CISC microcomputers MCUs featuring high ROM code efficiency, extensive EMI/EMS noise immunity, ultra-low power consumption, high-speed processing

R5F5631

Abstract: R5F563NBDDFP A083H RX631 100-6 p86 A161H ir127 capacitor PMR 202 DM IPR200 c04f
Contextual Info: Features RX63N Group, RX631 Group Renesas MCUs R01DS0098EJ0100 Rev.1.00 Jun 13, 2012 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, up to 2-MB flash memory, Ethernet MAC, full-speed USB 2.0 host/function/OTG interface, various communications interfaces including CAN, 10- & 12-bit A/D

RJH60T04

Contextual Info: Preliminary Datasheet RJH60T04DPQ-A0 600V - 30A - IGBT High Speed Power Switching R07DS0985EJ0100 Rev.1.00 Dec 05, 2012 Features • Optimized for current resonance application  Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)