14 PIN IC DIL DATASHEET Search Results

AG1170P-S3

Abstract: AG1170-S5 AG1170-D3 AG1170P-S5 AN1170-14 AN1170 600R 800R AG1170-D5
Contextual Info: V1.12 August 2009 Datasheet Silvertel Pb Ag1170 +5V / +3.3V Low Power Ringing SLIC FEATURES • A highly featured low power SLIC in a 14 pin SIL or 21 pin DIL format. • Integral high efficiency DC/DC converter. Single +5V or +3.3V supply voltage. • Highly integrated with an on-board

Contextual Info: 4TE 3> • Söbfl4Sb Ü O D im 474 H H MHS ^ 6 - Z 3 - / Z - nllll H w l l S B MATRA September 1990 M H S HM 65764 DATASHEET 8 k X8 HIGH SPEED CMOS SRAM FEATURES . ■ . . ■ FAST ACCESS TIME INDUSTRIAL/MILITARY : 35/45/55 ns max COMMERCIAL : 15*/20/25/35/45/55 ns (max)

Contextual Info: I lliiíilll R I S September 1989 HM 65728 DATASHEET 2 kX 8 HIGH SPEED CMOS SRAM FEATURES . . . . 300 AND 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE . SINGLE 5 VOLT SUPPLY

jm20329

Abstract: JM20329 USB to SATA Bridge jmicron make sata to usb cable diagram 1/serial/make sata to usb cable diagram usb to sata 10nF cap "JM20329" 9346 EEPROM 2.5 sata hdd pin out
Contextual Info: JMicron/JM20329 JM20329 Hi-Speed USB to SATA Bridge Datasheet Rev. 1.0 Version 1.0 JMicron 2007. All rights reserved. Page 1 May 2007 Copying prohibited. JMicron/JM20329 Revision History Version Date 0.8 2007/3/20 Initialization of this document for JM20329.

V2DIP2-32

Abstract: usb flash drive circuit diagram Vdip1 VNC2-32
Contextual Info: Future Technology Devices International Ltd. V2DIP2-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000164 Version 1.01 Issue Date: 2010-05-25 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

VNC2-32

Abstract: V2DIP2-32 VNCL2-32Q
Contextual Info: Future Technology Devices International Ltd. V2DIP2-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000164 Version 1.0 Issue Date: 2010-04-16 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

VNC2

Contextual Info: Future Technology Devices International Ltd. V2DIP2-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000164 Version 1.0 Issue Date: 2010-04-16 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

THERMISTORS nsp 037

Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.

mte maxim

Contextual Info: MTE T> m S ñ b ñ 4Sh D0D11S1 5T7 • I1MHS nllll H v l M i v MATRA September 1990 M H S HM 65787 DATASHEET 64 K X 1 HIGH SPEED CMOS SRAM FEATURES ■ FAST ACCESS TIME INDUSTRIAL/MILITARY : 25/35/45/55 ns COMMERCIAL : 15*/20/25/35/45 ns . LOW POWER CONSUMPTION

V2DIP1-32

Abstract: VNC2-32Q ftdi spi example usb flash drive circuit diagram t4 3570 datasheet Vdip1 VDIP2 VNC1L VNC2
Contextual Info: Future Technology Devices International Ltd. V2DIP1-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000163 Version 1.01 Issue Date: 2010-05-25 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

Contextual Info: Future Technology Devices International Ltd. V2DIP1-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000163 Version 1.01 Issue Date: 2010-05-25 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

VNC2-32

Abstract: u1M code vnc2 ftdi spi example
Contextual Info: Future Technology Devices International Ltd. V2DIP1-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000163 Version 1.0 Issue Date: 2010-04-16 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

V2DIP2-64

Abstract: J127
Contextual Info: Future Technology Devices International Ltd. V2DIP2-64 VNCL2-64Q Development Module Datasheet Document Reference No.: FT_000166 Version 1.01 Issue Date: 2010-05-06 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

vinculum hid

Abstract: J222 J229 VNC2 j126 V2DA
Contextual Info: Future Technology Devices International Ltd. V2DIP2-64 VNCL2-64Q Development Module Datasheet Document Reference No.: FT_000166 Version 1.0 Issue Date: 2010-04-19 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

V2DIP1-64

Abstract: J222 J226 J214 J119 VNC2-64 vnc2-48l1a Vdip1 J121 J227
Contextual Info: Future Technology Devices International Ltd. V2DIP1-64 VNCL2-64Q Development Module Datasheet Document Reference No.: FT_000165 Version 1.01 Issue Date: 2010-05-25 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

VNC2-64Q1A

Contextual Info: Future Technology Devices International Ltd. V2DIP1-64 VNCL2-64Q Development Module Datasheet Document Reference No.: FT_000165 Version 1.0 Issue Date: 2010-04-19 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

VNC1L

Abstract: VDIP2 VNC2-48 J114 V2DIP1-48
Contextual Info: Future Technology Devices International Ltd. V2DIP2-48 VNC2-48 Development Module Datasheet Document Reference No.: FT_000237 Version 1.0 Issue Date: 2010-04-16 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

Contextual Info: M l M A I S September 1989 HM 65764 DATASHEET 8 k X 8 HIGH SPEED CMOS SRAM FEATURES 300 AND 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE SINGLE 5 VOLT SUPPLY FAST ACCESS TIME

Contextual Info: IlM lI September 1989 HM 65767 DATASHEET 16 K X 1 HIGH SPEED CMOS SRAM FEATURES 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE SINGLE 5 VOLT SUPPLY FAST ACCESS TIME

vinculum hid

Abstract: VDIP2 J120
Contextual Info: Future Technology Devices International Ltd. V2DIP2-48 VNC2-48 Development Module Datasheet Document Reference No.: FT_000237 Version 1.01 Issue Date: 2010-05-25 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

V2DIP2-48

Abstract: VNC2-48 VDIP2 usb flash drive circuit diagram J218 VNC2-48Q J1-14 J1-1818 ftdi spi example J214
Contextual Info: Future Technology Devices International Ltd. V2DIP2-48 VNC2-48 Development Module Datasheet Document Reference No.: FT_000237 Version 1.01 Issue Date: 2010-05-25 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

Contextual Info: 4RE D Sñtjfl4Sb □□□llT'ì bfib M M M H S fililíI V r H I September 1990 MATRA M H S HM 65790 DATASHEET 16 K X 4 HIGH SPEED CMOS SRAM SEPARATE I/O FEATURES 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN

Contextual Info: IlM lI Septem ber 198£ HM 65791 DATASHEET 16 K x 4 HIGH SPEED CMOS SRAM SEPARATE I/O AND TRANSPARENT WRITE FEATURES FAST ACCESS TIME MILITARY : 35/45 ns max COMMERCIAL : 25/35/45 ns (max) LOW POWER CONSUMPTION ACTIVE : 267 mW (typ) STANDBY : 75 mW (typ)

Contextual Info: IIIÍMÍIII Preliminary September 1989 HM 65797 DATASHEET 256 K X 1 H IG H S P E E D C M O S SRAM FEATURES 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000V ELECTROSTATIC DISCHARGE SINGLE 5 VOLT SUPPLY