13L DIODE Search Results

74244

Abstract: SUD50P04-13L-E3 13L diode SUD45P03-15 SUD50P04-13L SUD45P03-15-E3
Contextual Info: Specification Comparison Vishay Siliconix SUD50P04-13L vs. SUD45P03-15 Description: Package: Pin Out: P-Channel, 40 V D-S 175 °C MOSFET TO-252 Identical Part Number Replacements SUD50P04-13L-E3 Replaces SUD45P03-15-E3 SUD50P04-13L-E3 Replaces SUD45P03-15

SUB45N03-13L

Contextual Info: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TrenchFETr Power MOSFETS D 175_C Junction Temperature D TO-263 G G D S Top View S SUB45N03-13L

Contextual Info: SUP/SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 20 V 45a 0.02 @ VGS = 4.5 V 45a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB45N03-13L Top View N-Channel MOSFET

SUB45N03-13L

Abstract: S-05010-Rev
Contextual Info: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TrenchFETr Power MOSFETS D 175_C Junction Temperature D TO-263 G G D S Top View S SUB45N03-13L

SUB45N03-13L

Contextual Info: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TrenchFETr Power MOSFETS D 175_C Junction Temperature D TO-263 G G D S Top View S SUB45N03-13L

SUP45N03-13L

Contextual Info: SUP45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET SUP45N03-13L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUB45N03-13L

Contextual Info: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TO-263 G DRAIN connected to TAB G D S Top View S SUB45N03-13L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TO-263 G DRAIN connected to TAB G D S Top View S SUB45N03-13L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUB45N03-13L

Abstract: SUP45N03-13L W45A
Contextual Info: SUP/SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB45N03-13L Top View N-Channel MOSFET

Contextual Info: SUB45N03-13L Siliconix N-Channel 30-V D-S , 175_C MOSFET New Product PRODUCT SUMMARY V(BR)DSS (V) 30 RDS(ON) (W) ID (A) 0.013 @ VGS = 10 V 45A 0.02 @ VGS = 4.5 V 45A D TO-263 G G D S Top View S SUB45N03-13L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: SUB45N03-13L Siliconix N-Channel 30-V D-S , 175°C MOSFET New Product IQ * « * £ ° ’ PRODUCT SUM M ARY r DS(ON) V (BR)DSS (V) (-2) HP1 \\o * y*6 •d (A) 0.013 @ V GS = 10 V 45a 0.02 @ VGS = 4.5 V 45a 30 D Q TO-263 r i n G D S Top View o s SUB45N03-13L

SUP45N03-13L

Contextual Info: SUP45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET SUP45N03-13L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUB45N03-13L

Contextual Info: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TO-263 G DRAIN connected to TAB G D S Top View S SUB45N03-13L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUP45N03-13L

Contextual Info: SUP45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET SUP45N03-13L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUD50P04-13L-E3

Abstract: 13L diode
Contextual Info: SUD50P04-13L New Product Vishay Siliconix P-Channel 40-V D-S , 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature PRODUCT SUMMARY VDS (V) −40 40 rDS(on) (W) ID (A) 0.013 @ VGS = −10 V −60c 0.022 @ VGS = −4.5 V −48

diode marking code 13L

Abstract: LLP2513-13L VEMI65AB-HCI 81717 MARKING 13L
Contextual Info: VEMI65AB-HCI Vishay Semiconductors 6-Channel EMI-Filter with ESD-Protection FEATURES • Ultra compact LLP2513-13L package • Low package profile of 0.6 mm 12 11 9 10 7 8 • 6-channel EMI-filter 13 • Low leakage current 1 2 3 4 • Line resistance RS = 100 Ω

marking code vishay

Abstract: VEMI65AA-HCI-GS08 Vishay DaTE CODE z-diode LLP2513-13L VEMI65AA-HCI
Contextual Info: VEMI65AA-HCI Vishay Semiconductors 6-Channel EMI-Filter with ESD-Protection Features • • • • • • • Ultra compact LLP2513-13L package Low package profile of 0.6 mm 6-channel EMI-filter e3 Low leakage current Line resistance RS = 100 Ω Typical cut off frequency f3dB = 100 MHz

11-4C1

Contextual Info: SQD50P04-13L www.vishay.com Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 40 RDS(on) () at VGS = - 10 V 0.013 RDS(on) () at VGS = - 4.5 V 0.022

SUD50P04-13L-E3

Abstract: SUD50P04-13L 73009
Contextual Info: SUD50P04-13L New Product Vishay Siliconix P-Channel 40-V D-S , 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature PRODUCT SUMMARY VDS (V) −40 40 rDS(on) (W) ID (A) 0.013 @ VGS = −10 V −60c 0.022 @ VGS = −4.5 V −48

Contextual Info: VEMI65AA-HCI Vishay Semiconductors 6-Channel EMI-Filter with ESD-Protection FEATURES • Ultra compact LLP2513-13L package 11 12 9 10 8 • Low package profile of 0.6 mm 7 • 6-channel EMI-filter 13 • Low leakage current 1 2 3 4 5 • Line resistance RS = 100 Ω

Contextual Info: VEMI65AC-HCI Vishay Semiconductors 6-Channel EMI-Filter with ESD-Protection FEATURES • Ultra compact LLP2513-13L package • Low package profile of 0.6 mm 11 12 9 10 8 7 • 6-channel EMI-filter 13 • Low leakage current 1 2 3 4 5 • Line resistance RS = 100 Ω

Contextual Info: New Product SUD50P04-13L-GE3 Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () ID (A) 0.013 at VGS = - 10 V - 55.7c 0.022 at VGS = - 4.5 V - 44.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

diode marking code 13L

Contextual Info: VEMI65AB-HCI www.vishay.com Vishay Semiconductors 6-Channel EMI-Filter with ESD-Protection FEATURES • Ultra compact LLP2513-13L package • Low package profile of 0.6 mm 12 11 9 10 8 7 • 6-channel EMI-filter 13 • Low leakage current 1 2 3 4 5 • Line resistance RS = 100 

SUD50P04-13L-E3

Abstract: SUD50P04-13L
Contextual Info: New Product SUD50P04-13L Vishay Siliconix P-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 rDS(on) (Ω) ID (A) 0.013 at VGS = - 10 V - 60a 0.022 at VGS = - 4.5 V - 48 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS