1333 MARKING Search Results

S-1333A10-A4T1U3

Abstract: S-1333A28-M5T1U3
Contextual Info: S-1333 Series www.sii-ic.com LOW CURRENT CONSUMPTION HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.1.0_00 Seiko Instruments Inc., 2011 The S-1333 Series, developed by using the CMOS technology, is a positive voltage regulator IC which has low current

S-1333A12-A4T1U3

Abstract: S-1333
Contextual Info: S-1333 Series www.sii-ic.com LOW CURRENT CONSUMPTION HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.2.1_00 Seiko Instruments Inc., 2011-2012 The S-1333 Series, developed by using the CMOS technology, is a positive voltage regulator IC which has low current

Contextual Info: S-1333 Series www.sii-ic.com LOW CURRENT CONSUMPTION HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.2.2_00 Seiko Instruments Inc., 2011-2013 The S-1333 Series, developed by using the CMOS technology, is a positive voltage regulator IC which has low current

Contextual Info: S-1333 Series www.sii-ic.com LOW CURRENT CONSUMPTION HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.1.1_00 Seiko Instruments Inc., 2011-2012 The S-1333 Series, developed by using the CMOS technology, is a positive voltage regulator IC which has low current

texas instruments assembly year

Abstract: SSTE32882 marking ti marking code TI 32882 DDR3-1333 SN74 SN74SSQE32882ZALR TE32882
Contextual Info: SN74SSQE32882ZALR Part Number/Top Marking information March 2008 Part Number SN74SSQE32882ZALR SN74: Standard Prefix for commercial Products Derived from JEDEC naming for DDR3 Register SSTE32882 E: 1.5V Voltage Range, up to DDR3-1333 Q: QuadRank Support

Contextual Info: Data Sheet Rev.1.1 17.11.2010 4096MB DDR3 – SDRAM RDIMM 240 Pin registered DIMM Features: • SGP04G72D1BD2MT-CCRT 4096MB PC3-10600 in FBGA Technology RoHS compliant Options: • Data Rate / Latency DDR3 1333 MT/s CL9 DDR3 1066 MT/s CL7 Marking -CC -BB 

Contextual Info: Data Sheet Rev.1.1 17.11.2010 4096MB DDR3 – SDRAM RDIMM 240 Pin registered DIMM Features: • SGP04G72D1BD2MT-CCRT 4096MB PC3-10600 in FBGA Technology RoHS compliant Options: • Data Rate / Latency DDR3 1333 MT/s CL9 DDR3 1066 MT/s CL7 Marking -CC -BB 

Contextual Info: Data Sheet Rev.1.0 25.02.2011 4096MB DDR3 – SDRAM DIMM 240 Pin UDIMM Features: SGU04G64B1BD2MT-xxR • 4GByte in FBGA Technology •      RoHS compliant Options:    Data Rate / Latency DDR3 1066 MT/s CL7 DDR3 1333 MT/s CL9 Marking

Contextual Info: Data Sheet Rev.1.1 24.05.2011 2048MB DDR3 – SDRAM UDIMM 240 Pin UDIMM Features: SGU02G64A1BD1MT-xxR • 2GByte in FBGA Technology RoHS compliant Options: • Data Rate / Latency DDR3 1066 MT/s CL7 DDR3 1333 MT/s CL9 Marking -BB -CC      

B63URCB

Contextual Info: Data Sheet Rev.1.0 04.02.2011 2048MB DDR3 – SDRAM DIMM 240 Pin UDIMM Features: SGU02G64B1BG2SA-xxR • 2GByte in FBGA Technology •      RoHS compliant Options:  Data Rate / Latency DDR3 1066 MT/s CL7 DDR3 1333 MT/s CL9 Marking -BB -CC

Contextual Info: Data Sheet Rev.1.0 14.01.2011 1024MB DDR3 – SDRAM UDIMM 240 Pin UDIMM Features: SGU01G64A1BG1SA-xxR • 1GByte in FBGA Technology •      RoHS compliant Options:   Data Rate / Latency DDR3 1066 MT/s CL7 DDR3 1333 MT/s CL9 Marking -BB

Contextual Info: Data Sheet Rev.1.0 25.02.2011 4096MB DDR3 – SDRAM DIMM 240 Pin UDIMM Features: SGU04G64B1BD2MT-xxR • 4GByte in FBGA Technology •      RoHS compliant Options:    Data Rate / Latency DDR3 1066 MT/s CL7 DDR3 1333 MT/s CL9 Marking

Contextual Info: Data Sheet Rev.1.1 24.05.2011 2048MB DDR3 – SDRAM UDIMM 240 Pin UDIMM Features: SGU02G64A1BD1MT-xxR • 2GByte in FBGA Technology RoHS compliant Options: • Data Rate / Latency DDR3 1066 MT/s CL7 DDR3 1333 MT/s CL9 Marking -BB -CC      

Contextual Info: Data Sheet Rev.1.0 21.01.2011 2048MB DDR3 – SDRAM SO-DIMM 204 Pin SO-DIMM Features: SGN02G64E1BG2SA-xxRT • 2GByte in FBGA Technology •  RoHS compliant   Options:  Data Rate / Latency DDR3 1066 MT/s CL7 DDR3 1333 MT/s CL9 Marking -BB -CC 

Contextual Info: Data Sheet Rev.1.1 20.07.2011 1024MB DDR3 – SDRAM SO-DIMM 204 Pin SO-DIMM Features: SGN01G64D2BG1SA-xxRT • 1GByte in FBGA Technology •  RoHS compliant   Options:   Data Rate / Latency DDR3 1066 MT/s CL7 DDR3 1333 MT/s CL9 Marking -BB -CC

LR33300

Contextual Info: SYNOVA 1333 Gateway Drive, Suite 1017, Melbourne FL 32901, 407 726-0796 Visit us at our web site http://www.synova.com Mongoose-V 32-bit MIPS Microprocessor Architecture Description January 30, 1997 (rev 1.3) 1.0 PROCESSOR OVERVIEW{ PROCESSOR OVERVIEW" \l 1 }

Contextual Info: Data Sheet Rev.1.0 12.12.2012 2048MB DDR3 – SDRAM registered ECC VLP Mini-RDIMM 244 Pin ECC Mini-RDIMM Features: SGH02G72C1BD1MT-XX W RT • •     RoHS compliant Options:  Data Rate / Latency DDR3 1066 MT/s CL7 DDR3 1333 MT/s CL9 Marking

Contextual Info: Data Sheet Rev. 1.00 25.07.2012 4096MB DDR3 – SDRAM unbuffered ECC VLP Mini-UDIMM 244 Pin ECC Mini-UDIMM Features: SGL04G72C1BB1SA-xxRT • •     Options:  Data Rate / Latency DDR3 1333 MT/s CL9 DDR3 1600 MT/s CL11 Marking -CC -DC  Module density

Contextual Info: Data Sheet Rev.1.0 04.05.2011 1024MB DDR3 – SDRAM SO-DIMM 204 Pin SO-DIMM Features: SGN01G64D2BG1MT-xxRT • 1GByte in FBGA Technology •  RoHS compliant   Options:   Data Rate / Latency DDR3 1066 MT/s CL7 DDR3 1333 MT/s CL9 Marking -BB -CC

Contextual Info: Data Sheet Rev.1.0 12.12.2012 2048MB DDR3 – SDRAM registered ECC VLP Mini-RDIMM 244 Pin ECC Mini-RDIMM Features: SGH02G72C1BD1MT-XX W RT • •     RoHS compliant Options:  Data Rate / Latency DDR3 1066 MT/s CL7 DDR3 1333 MT/s CL9 Marking

Contextual Info: Data Sheet Rev. 1.00 25.07.2012 4096MB DDR3 – SDRAM unbuffered ECC VLP Mini-UDIMM 244 Pin ECC Mini-UDIMM Features: SGL04G72C1BB1SA-xxRT • •     Options:  Data Rate / Latency DDR3 1333 MT/s CL9 DDR3 1600 MT/s CL11 Marking -CC -DC  Module density

Contextual Info: W3J512M72K-XPBX W3J512M72K-XLBX *ADVANCED 4GB – 512M x 72 DDR3 SDRAM 1.35V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1,066, 1333, 1600* Mb/s  Differential clock terminations included

Contextual Info: W3J512M64K-XPBX W3J512M64K-XLBX *ADVANCED 4GB – 512M x 64 DDR3 SDRAM 1.35V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1,066, 1333, 1600* Mb/s  Differential clock terminations included

Contextual Info: W3J512M64G-XPBX W3J512M64G-XLBX 4GB – 512M x 64 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s  Differential clock terminations included