1331 TRANSISTOR Search Results

planar transformer theory

Abstract: SPM12535T-R60M220 P820 AN1331 LM5033 1331 SMD P8208 zener 13v smd AN-1331 C4532X7R1H685M
Contextual Info: National Semiconductor Application Note 1331 Dennis Morgan May 2004 Introduction • Size: 2.3 x 1.45 x 0.43 in. 1⁄4 brick footprint The printed circuit board consists of 4 layers of 2 oz copper on FR4 material, with a thickness of 0.050 in. It is designed

ups D6-11

Abstract: MAX3532 MAX3532EAX 55dBmV
Contextual Info: 19-1331; Rev 1; 6/98 KIT ATION EVALU E L B A IL AVA Upstream CATV Driver Amplifier _Features The MAX3532 is a programmable power amplifier for use in upstream cable applications. The device outputs up to 62dBmV continuous wave through a 1:2 (voltage

smd transistor t1A

Abstract: lm5033
Contextual Info: User's Guide SNVA091A – May 2004 – Revised May 2013 AN-1331 LM5033 Evaluation Board 1 Introduction The LM5033EVAL evaluation board provides the design engineer with a fully functional intermediate bus converter IBC employing a half-bridge topology. Configured as an IBC, the circuit operates open loop,

CMOS differential amplifier cascode

Abstract: folded cascode op amp open loop gain high end amplifier schematics folded cascode second stage folded cascode current mirror op amp folded cascode rail to rail op amp AN13310 class A push pull power amplifier EL5157 Q7-Q10
Contextual Info: Avoiding Instability in Rail-to-Rail CMOS Amplifiers Application Note January 2, 2008 AN1331.0 FIGURE 1. VOLTAGE FEEDBACK AMPLIFIER Introduction Voltage Feedback Amplifier The minimum feature size of the MOS transistor has been greatly reduced since its invention just a few decades ago.

MAX3271

Abstract: MAX3272 MAX3272A MAX3272AEGP MAX3272EGP MAX3873
Contextual Info: 19-2269; Rev 1; 1/03 KIT ATION EVALU E L B AVAILA +3.3V, 2.5Gbps Low-Power Limiting Amplifiers Features ♦ Single +3.3V Power Supply ♦ 33mA Supply Current ♦ 5ps Deterministic Jitter ♦ 90ps Edge Speed ♦ Output Squelch Function ♦ Programmable Loss-of-Signal Function

Contextual Info: 19-2269; Rev 3; 11/04 KIT ATION EVALU E L B A AVAIL +3.3V, 2.5Gbps Low-Power Limiting Amplifiers Features The MAX3272/MAX3272A 2.5Gbps limiting amplifiers accept a wide range of input voltages and provide a constant-level output voltage with controlled edge

MAX3271

Abstract: MAX3272 MAX3272AEGP MAX3272AETP MAX3272EGP
Contextual Info: 19-2269; Rev 3; 11/04 KIT ATION EVALU E L B A AVAIL +3.3V, 2.5Gbps Low-Power Limiting Amplifiers Features The MAX3272/MAX3272A 2.5Gbps limiting amplifiers accept a wide range of input voltages and provide a constant-level output voltage with controlled edge

MAX3271

Abstract: MAX3272 MAX3272A MAX3272AEGP MAX3272EGP MAX3873
Contextual Info: 19-2269; Rev 2; 6/03 KIT ATION EVALU LE B A IL A AV +3.3V, 2.5Gbps Low-Power Limiting Amplifiers Features ♦ Single +3.3V Power Supply ♦ 33mA Supply Current ♦ 5ps Deterministic Jitter ♦ 90ps Edge Speed ♦ Output Squelch Function ♦ Programmable Loss-of-Signal Function

transistor marking R2s

Abstract: AMI siemens BFR93AW k150t
Contextual Info: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA 1=B Q62702-F1489 h R2s m BFR 93AW ro ESP: Electrostatic discharge sensitive device, observe handling precaution!

POWER TRANSISTOR MPSW45

Abstract: 1334 On
Contextual Info: ON Semiconductort MPSW45 MPSW45A* One Watt Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPSW45 MPSW45A Unit Collector −Emitter Voltage VCES 40 50 Vdc Collector −Base Voltage VCBO 50 60 Vdc Emitter −Base Voltage

TAG 8907

Abstract: lc 945 p transistor BFT93 1348 transistor B 1446 transistor B 1449 transistor 2F PNP SOT23 lc 945 transistor SiS 671 BFR93
Contextual Info: Philips Semiconductors •■ 71 10 05 b d O b ^ h l S IS ■ P H IN Product specification PNP 5 GHz wideband transistor DESCRIPTION ^ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in

Contextual Info: Q 0 E S 3 C1S TOM • APX ^53^31 Philips Semiconductors N AUER PHILIPS / D I S CR E T E b?E Product specification J> PNP 5 GHz wideband transistor DESCRIPTION £ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF

2N7221 JANTX

Abstract: IQR 2400 2N7221 IRFM340 JANTXV2N7221
Contextual Info: Data Sheet No. PD-9.490C INTERNATIONAL RECTIFIER \ I & R \ REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL IRFM34Q 2 INI7221 JANTX2N7221 JANTXV2N7221 [REF: MIL-S-195QO/596 400 Volt, 0.55 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

Contextual Info: H EW LETT PACKARD 0PT 0C 0U P L E R S m Power Bipolar Transistor Base Drive Optocoupler Technical Data HCPL-3000 Features Description • High Output Current Iq 2 2 . 0 A Peak, 0 . 6 A Continuous I01 (1.0 A Peak, 0.5 A Continuous) • 1.5 kV/jis Minimum Common

Contextual Info: MA78M06QB 3-Terminal Positive Voltage Regulator FAIRCHILD A Schlumberger Company MIL-STD-883 July 1986— Rev 25 Aerospace and Defense Data Sheet Linear Products Description Connection Diagram 3-Lead TO-39 Can Top View The J/A78M06QB 3-Terminal Medium Current Positive Volt­

K14.A Package

Abstract: 5962F9861301VXC HS9-139RH-Q 5962F9861301QCC 5962F9861301QXC 5962F9861301VCC HS1-139RH-Q HS-139RH D14.3 Package HS139RH
Contextual Info: HS-139RH Data Sheet May 19, 2009 Radiation Hardened Quad Voltage Comparator FN3573.4 Features • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened HS-139RH consists of four independent single or dual supply voltage comparators on a single monolithic substrate. The common mode input voltage

Contextual Info: 0 . OPTEK Product Bulletin HCC135 May 1993 High Speed Optocouplers Types HCC135, HCC136, HCC135TXV, HCC136TXV .2 5 0 6 .3 5 . 240 ( 6 . 10 ) * .175(4.44) .165(4.19) .0 6 6 ( 1 . 68 ) •1 LL PIN 1 IDENTIFIER cc o— 6 ANODE J .028(0.71) , .022(0.56) GND

Contextual Info: Wfipl m L ftm HEW LETT PACKARD Power Bipolar Transistor Base Drive Optocoupler Technical Data HCPL-3000 Features Description • High Output Current I q 2 2 . 0 A Peak, 0 . 6 A Continuous I0 1 ( 1 . 0 A Peak, 0 . 5 A Continuous) • 1.5 kV/|is Minimum Common

E55361

Abstract: HCPL-3000 V01L V02H
Contextual Info: H Power Bipolar Transistor Base Drive Optocoupler Technical Data HCPL-3000 Features Description • High Output Current IO2 2.0 A Peak, 0.6 A Continuous IO1 (1.0 A Peak, 0.5 A Continuous) • 1.5 kV/ µs Minimum Common Mode Rejection (CMR) at VCM = 600 V

HP optocoupler 3000

Abstract: E55361 HCPL-3000 V01L V02H 5965-3584E
Contextual Info: OPTOCOUPLERS H Power Bipolar Transistor Base Drive Optocoupler Technical Data HCPL-3000 Features Description • High Output Current IO2 2.0 A Peak, 0.6 A Continuous IO1 (1.0 A Peak, 0.5 A Continuous) • 1.5 kV/ µs Minimum Common Mode Rejection (CMR) at

G307

Abstract: 2N6769 2N6770 2N677
Contextual Info: H E O | 4055452 0 0 0 ^ 3 3 0 7 | Data Sheet No. PD-9.330D INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER H E X F E T T R A N S IS T O R S J E D E C R E G IS T E R E D N-CHANNEL P O W E R M Q SF E T s I « R *JAINITXV2N6770 *JA N TX2N B77G SN B77Q

t056

Abstract: BLY93 2SC765 BDY88 BDY89 MSA8508 RE3797 SE3030 SJ 96 B5022
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E No. H H TYPE N o. I I M IN . M A X P c ID E R A T E FREE A IR @ J to C 2 5 'C

22859, DTMF

Abstract: CD22859
Contextual Info: HA RR IS S E M I C O N D S E CT OR 40E D n 4 3 0 S 27 1 0 0 3 5 5 2 0 4 El HAS T-7SZ7'^' ^ USLl HARRIS Monolithic Silicon COS/MOS Duai-Tone Multifrequency Tone Generator August 1991 Features Description • M ute D rivers O n -C h ip The CD22859 is a CMOS dual-tone muitifrequency DTMF

RF2713

Abstract: RF2123 RF2516 RF2174 rf2306 RF2420 TA0027 TA0034 RF2108 TA0010
Contextual Info:
   Alphanumeric Product List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ii About RF Micro Devices, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . . . . viii Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix