13002 L Search Results

g 13003

Abstract: LM 13003
Contextual Info: SGS-THOMSON ^ □ ^ © i^ © ? ^ iD © S SGS 13002/13003 SGS 13002 T/13003 T HIGH VOLTAGE SWITCHING APPLICATIONS DESCRIPTION The SGS13002, SGS13003 SOT-82 plastic package and the SGS13002T, SGS13003T (TO220 plastic package) are silicon multiepitaxial-mesa

transistor 13002

Abstract: 13002 npn ST-13002 transistor TO-92 13002 13002 transistor 13002 ST 13002 13002 TO-92 ST13002 13002 power transistor
Contextual Info: ST 13002 NPN Silicon Epitaxial Planar Transistor High voltage power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400

X 13003

Abstract: 13002 d 13003 x 13003 sa 13002 13003 d F 13003 13003 h electronic ballast 13003 13002 npn
Contextual Info: A El G CORP 17E D □ D S ^ MS t 000^27 5 • TE 13002 TE 13003 ! m H ï ï j £ K l ï S e le c t r o n ic CrearlelèchnQfogws r - 3 3 - il Silicon NPN Power Transistors Applicatipns: Switching mode power supply, electronic ballast Features: • In multi diffusion technique

3DD13002

Abstract: 06-CL
Contextual Info: TO-251 Plastic-Encapsulate Transistors 3D D 13002 TR A N SISTO R N PN FEATURES Power dissipation TO -2 5 1 Pcm; 1.25W (Tam b=25°C ) C o llecto r current 1 .BASE Icm- 2 .C O LLE C T O R 1A C ollecto r-b ase voltage 3 .E M IT T E R V(BR)CBO: 600 V u O perating and storage ju n ctio n tem perature range

13002 l

Abstract: c s 13002 TRANSISTOR transistor BR 13002
Contextual Info: M C C TO-251 Plastic-Encapsulate Transistors 3D D 13002 TRANSISTOR NPN FE A T U RE S L TO-251 P cm: 1.2 5W (Tam b=25°C ) 1 .B A S E Icm: 1 A 2 .C O L L E C T O R I M M * « * » 'voltage' V(BR)CBO: 600 V 3 . E M IT T E R 1 2 S B fftfcra tin g a n d s to r a g e ju n c t io n te m p e r a tu r e ra n g e

transistor TO-92 13002

Abstract: 13002 TO-92 transistor x 13002 13002 T CSD 13002 13002 TRANSISTOR transistor 13002 tr 13002 transistor 13002 to-92 13002 TO 92 PACKAGE
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSD13002 TO-92 Plastic Package For Lead Free Parts, Devices Part # will be Perfixed with "T"

transistor w 13002

Abstract: 13002 and power transistor 13002 TRANSISTOR transistor TO-92 13002
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSD13002 TO-92 Plastic Package For Lead Free Parts, Devices Part # will be Perfixed with "T"

13002

Abstract: 13003 13003 TRANSISTOR transistor 13002 13002 TRANSISTOR transistor 13003 transistor 13003 A c s 13003 TRANSISTOR 13002 and 13003 power transistor SD13003
Contextual Info: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

13002 TRANSISTOR

Abstract: transistor 13002 13003 TRANSISTOR 13002 13003 transistor 13003 13002 and 13003 power transistor c s 13003 TRANSISTOR BR 13003 W 13003 TRANSISTOR
Contextual Info: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

transistor 13002

Abstract: 13003 TRANSISTOR 13003 13002 TRANSISTOR 13002 transistor 13003 13002 and 13003 power transistor BR 13003 sd13003 W 13003 TRANSISTOR
Contextual Info: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

transistor t114

Abstract: transistor 13002 to-92
Contextual Info: LESHAN RADIO COMPANY, LTD. LR257 AC/DC Current Mode PWM power management controller The LR257 AC—DC is a high efficiency current-mode PWM power supply controller。 It drives an external NPN transistor for high voltage switching. Apply with BiCMOS technology, the

AN57864

Abstract: LUPA-1300-2 AN54468 crc 13002 144x128 FIX32 CHN 234 diode
Contextual Info: CYIL2SM1300AA LUPA 1300-2: High Speed CMOS Image Sensor Features • 1280 x 1024 Active Pixels ■ 14 µm X 14 µm Square Pixels FPN correction enables the sensor to output ready to use image data for most applications. To enable simple and reliable system

transistor 13002

Abstract: PA 13001 13002 transistors 13001 MIL-T-10727 QQN-290
Contextual Info: Series 800 Vertisockets Vertical Mounting with Bifurcated Contacts FEATURES: • Aries offers a full line of VertisocketsTM for DIP packaging of LEDs, incandescent lamps, DIP switches, test points, etc. The variations of mounting position and pin configuration provide exceptional design freedom.

35W amplifiers

Abstract: Xemod "RF Power Amplifiers" QPP-008
Contextual Info: QPP-008 35W, 925-960MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-008 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The power

transistor 13001

Abstract: transistor 13002 MIL-T-10727
Contextual Info: Series 800 Vertisockets Horizontal Mounting with Bifurcated Contacts FEATURES: • Aries offers a full line of VertisocketsTM for DIP packaging of LEDs, incandescent lamps, DIP switches, test points, etc. The variations of mounting position and pin configuration provide exceptional design freedom.

mkp 1.27

Abstract: MKP 422
Contextual Info: MKP 422 Vishay BCcomponents Metallized Polypropylene Filter Film Capacitors MKP Radial Potted Type for Surge Voltage Applications APPLICATIONS Low losses due to low contact resistance and low loss dielectric result in applications where high frequency occur or

0294040.MXJ

Contextual Info: \ DWG. NO. SD-547 13-002 DO NOT SCALE DRAWING EC NO. DRWN: CH'K: APPR: CD EC NO. DRWN: CH'K: APPR: EC NO. DRWN: CH'K: APPR: EC NO. DRWN: CH'K: APPR: RELEASED CD EC NO. JD 2 0 0 0 -0 5 18 DRWN: M.ISOGAYA CH'K: S.ICHIKAWA APPR: H.IKESUGI M. 00 00 O —I m oo

13003 transistor SMD

Abstract: transistor smd XH d13003 TD13002 13003 NPN Transistor features TD13003 al 13003 electronic ballast 13003 transistor al 13003 c s 13003 TRANSISTOR h
Contextual Info: T e m ic TD13002 • TD13003 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • Very low dynamic saturation • Glass passivation • Very low operating temperature • Very short switching times

Je 243

Abstract: JE371 je240 JE171 JE340 transistor BD 341 bd189
Contextual Info: STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER 1 CASE 77-07 TO-225AA R e s is tiv e S w itc h in g Ic C o n t Am ps v C E O (s u s ) Volts M ax M in NPN 0.3 350 0 .5 »f @ ic US ps @ lc *T MHz Amp M ax M ax Amp

AP3706

Abstract: ee13 bobbin 13002 tr 13002 APT13003E APT13003 transistor 13002 1N4007 EE16 FR107
Contextual Info: 5V350mA Charger Solution Using AP3706 May. 2008 BCD Semiconductor Manufacturing Limited 2008 All rights reserved Content „ „ „ „ „ „ „ Technical Specification Demo Board Schematic Bill of Material Transformer Specs Demo Board PCB Layout Test Results

MKP 2.2 kV

Abstract: MKP 422
Contextual Info: MKP 422 Vishay BCcomponents Metallized Polypropylene Filter Film Capacitors MKP Radial Potted Type for Surge Voltage Applications FEATURES 168x12 halfpage 7.5 and 10 mm lead pitch. Supplied loose in box and ammopack. Withstand surge voltages up to 1.5 kV.

mkp a 001 47 05

Abstract: MKP 422
Contextual Info: MKP 422 Vishay BCcomponents Metallized Polypropylene Filter Film Capacitors MKP Radial Potted Type for Surge Voltage Applications FEATURES 168x12 halfpage 7.5 and 10 mm lead pitch. Supplied loose in box and ammopack. Withstand surge voltages up to 1.5 kV

13003

Abstract: 13003 application notes 2222 422 12703 transistor 13002 transistor 13003 MKP 422
Contextual Info: MKP 422 Vishay BCcomponents Metallized Polypropylene Filter Film Capacitors MKP Radial Potted Type for Surge Voltage Applications FEATURES 168x12 halfpage 7.5 and 10 mm lead pitch. Supplied loose in box and ammopack. Withstand surge voltages up to 1.5 kV.

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