13001 H Search Results

T-13051

Abstract: 13051 transistor 13001 13001 datasheet 13001 data sheet transistor 13001 13001 transistor w 13001 transistor 13001 datasheet T-13001
Contextual Info: 10 BASE-T Applications Isolation Transformers T-13001 9301 SCHEMATIC DIAGRAM IEEE 802.3 Compatible High Isolation 2000Vrms DIL Style ELECTRICAL SPECIFICATIONS AT 25 oC Part Number Turns Ratio OCL µH min. Leakage (µH max.) DCR (Ω max.) T-13051 1CT:1CT

13001 TRANSISTOR

Abstract: 13001 npn transistor 13001 ST 13001 13001 TRANSISTOR equivalent st 13001 TRANSISTOR NPN transistor 13001 npn 13001 13001 transistor TO-92 13001
Contextual Info: ST 13001 NPN Silicon Epitaxial Planar Transistor for high voltage and high speed switching applications Absolute Maximum Ratings Ta = 25 OC Parameter 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Symbol Value Unit Collector Base Voltage

TMS320C40

Contextual Info: SHAKTI 1 Place Gabriel PERI 13001 Marseille France + 33 -91-90-04-39 Fax: +(33) -91-91-43-34 Company Background SHAKTI is a company specializing in optronics systems. The main developments concern adaptive optics and related fields. In particular, it has developed hardware and

transistor D 13001

Abstract: transistor x 13001 transistor s 13001 eb 13001 transistor bc617
Contextual Info: N AMER PHILIPS/DISCRETE ^ 5 3 ^ 3 1 00E75fifl 31D b'lE » APX 13001/ BC618 NPN D A R LIN G TO N TRANSISTOR NPN small-signal Darlington transistors, each in a plastic TO-92 envelope. They can be used for general purpose low frequency applications and as relay drivers etc.

Contextual Info: Wire > Hook-Up Wire > 600 V Hook-Up Wire 600 V, PTFE Part No. 13207 13001 12819 12819UL* 11807 MIL-DTL-16878/4 Type E UL VW-1 NEMA HP3 Operating Temperature • -60°C to +200°C Wire Size AWG 32 30 28 28 18 Stranding mm 0.03 0.05 0.09 0.09 0.90 2 AWG 7/40

c3200 2200

Abstract: c5000-3300 C5000 3300 SKB C5000/3300 SKB C3200/2200 c5000/3300 skb c3200 SKB C SKB 40 c 5000 3300
Contextual Info: 663 - 4?*?•—o 5~1 7 V rsm VvRMS V rrm V 100 200 300 400 600 800 900 ; 1200 V 40 80 125 125 250 250 380 500 V b r |V v r m s v ! v 13001 500 Id (Tamb = 4 5 ° C ) 8 A 4 A ¡Cmax Rmin Types Cmax Rmin Types HF Q ! HF SKB B 40 C3200/2200 10000 0,25 SKB B 40 C5000/3300 15000

Semikron SKB b 80

Abstract: Semikron SKB b 500 Semikron SKB b 80 c3200 Semikron SKB C3200/2200 Semikron SKB b 500 c 3200 2200 Semikron SKB b 250 Semikron SKB b 40 Semikron SKB b 250 c 3200 2200 C5000/3300 Semikron SKB C3200/Semikron SKB b 250
Contextual Info: 013bb71 S1E » 0003^77 SEMIKRDN SEMIKRON INC Id Tamb = 45 °C 'V r s m VvRMS 4A ¡V r r m V 100 200 300 400 600 800 90 0' 12001 40 80 125 125 250 250 380 500 V(BR) 'VvRMS V ’ V 13001 500 |iF SKB SKB SKB SKB 1,6 10000 2 . 3 - 0 5 B 250 C5000/3300 2500' 0,8

HA13001

Abstract: HA13001 amplifier HA-13001 SRUT 5.5w HA13001 hitachi
Contextual Info: H A 13001 5.5W Dual/17.5W B T L Audio P o w er Am plifier •t t S o i t t ♦ n . 4 « ¿ ^ h 11 . o f t ' # * * " r * » t W t A M ?» 1 1 , O f lif c ie m t - C T .U O k H i. 0 .5 W u t 0.2294 typ • B T L T > T * LT«!HILfc«kä O A S O « J * 0 |M t* * > T . O C L T f U f f l T è J t .

transistor 13001

Abstract: 13001 transistor 400v 13001 TRANSISTOR NPN transistor 13001 transistor 13001 TO 92 13001 TO-92 transistor TO-92 13001 KSE13001HE13001 13001 transistor TO-92 13001 npn transistor
Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13001 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：D083AJ-00 芯片厚度：240±20µm 管芯尺寸：830x830µm 2 焊位尺寸：B 极 140×144µm 2，E 极 180×140µm 2

PK-85513-001

Abstract: FB 99 85513-0013
Contextual Info: 10 RECOMMENDED cr < in in 00 1 o i/ SEE FROM PCB LAYOUTS COMPONENT SIDE ) TOP ENTRY CONFIGURATION a - A SIZE — 8.80 l±J _i HOUSING LOADED PART. NO. 85513-0013 A o o 1 — CKTS 85513-0001 .122 .177 I5-(ZI8r e f .594 8 0 .7 0 , T YP .028 15.24 .600 YES

PA 13001

Abstract: 13001 s c s x 13001 H 08 c s x 13001 F 08 w 13001 13001S 13001sh h 13001 e 13001 H 13001 sh
Contextual Info: 10 Circuit NOT ES = 1- M A T ER IA L: - HOUSING: P O LY A M ID E 46 - T ER M IN A L: PHOSPHOR BRONZE P L A T E D FIB E R AREA, 0 .0 0 I 9 0 / .0 0 0 0 7 5 MIN TAB: BRASS FOR 3 - PRODUCT MATING MIN P U R E TIN P R E -P L A T E D WITH F .C .C .6 8 S P E C IF IC A T IO N

YH 13001

Abstract: SP 13001
Contextual Info: Advance information •■ A S4V C256K16E0 II 2.5V 2 5 6 K X 16 C M O S DRAM EDO Features • 5 1 2 re fre s h c y c le s, 8 m s re fre s h in te rv a l • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s x 16 b its - R A S -only o r C A S-before-R A S re fre s h o r se lf re fre s h

13001 LZ

Abstract: SR 13001 PA 13001
Contextual Info: Advance information •■ II AS4VC1M16E5 2.5V 1Mx 16 CMOS lntelliwatt,v DRAM EDO Features • Organization: 1 ,0 4 8 ,5 7 6 w ords • H igh speed X • 10 24 refresh cycles, 16 m s refresh interval 16 bits - RAS-only or CAS-before-RAS refresh or self refresh

PA 13001

Abstract: 13001 switching 13001 equivalent c s x 13001 H 06 tsc 3001 256KX16 Rmw46 RS 13001 13001 s 60 HA 13001
Contextual Info: Advance information •■ AS4VC256K16E0 1 2.5V 2 5 6 K X 16 CMOS DRAM EDO Features • O rganization: 2 6 2 ,1 4 4 w o rd s x 16 bits • H igh speed - 4 5 / 6 0 ns RAS access tim e - 2 0 / 2 5 ns c o lu m n address access tim e - 14 / 1 6 ns CAS access tim e

13001 TRANSISTOR

Abstract: c s x 13001 H 06 transistor x 13001 transistor c s x 13001 13001 TO-92 13001 npn transistor TO-92 13001 transistors 13001 transistor 13001 13001 transistor 400v
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92 Plastic Package ABSOLUTE MAXIMUM RATING Ta =25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage V Collector Emitter Voltage

Contextual Info: 10 © 1— rr < X o Ld LU l/> 1- MATERIAL: - HOUSING: POLYAMIDE 46 FIBER GLASS FILLE D - TERMINAL: PHOSPHOR BRONZE PLA TE D c5 o UL 9 4 -V 0 , COLOR BLACK. WITH: 0 . 0 0 127/.000050 MIN GOLD IN CONTACT AREA, 0 . 0 0 190/.000075 MIN T IN /LE A D IN TA IL AREA, BOTH OVER 0 . 0 0 127/.000050

13001 TRANSISTOR

Abstract: transistor 13001 transistor x 13001 transistor 13001 TO 92 13001 transistor 400v c s x 13001 H 06 transistors 13001 all transistor 13001 NPN transistor 13001 transistor s 13001
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92 Plastic Package ABSOLUTE MAXIMUM RATING Ta =25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage V Collector Emitter Voltage

13001 TRANSISTOR

Abstract: transistor 13001 transistor x 13001 13001 transistor 400v c s x 13001 H 06 13001 npn transistors 13001 transistor s 13001 13001 transistor c s x 13001
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92 Plastic Package ABSOLUTE MAXIMUM RATING Ta =25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage

CS 13001

Abstract: transistor 13001 transistor di 13001 transistor 13001 datasheet 13001 datasheet CAT13001 1 13001 transistors 13001 AEC-Q100 CAT130019SWI-GT3
Contextual Info: CAT130xx Voltage Supervisor with Microwire Serial CMOS EEPROM FEATURES DESCRIPTION „ Precision Power Supply Voltage Monitor The CAT130xx see table below are memory and supervisory solutions for microcontroller based systems. A CMOS serial EEPROM memory and a

CS 13001

Abstract: free circuit diagram for 13001 c s x 13001 H 08 onsemi marking SK transistor di 13001 13001 H all transistor 13001 transistor 13001 transistors 13001 AEC-Q100
Contextual Info: CAT130xx Voltage Supervisor with Microwire Serial CMOS EEPROM FEATURES DESCRIPTION „ Precision Power Supply Voltage Monitor The CAT130xx see table below are memory and supervisory solutions for microcontroller based systems. A CMOS serial EEPROM memory and a

54-794-002-102P

Abstract: 54-713-001-102Z
Contextual Info: M etuchen Gflfl “We Offer Quick Solutions to Noise Pollution” I -800-679-0516 • Ti e — I -800-679-9959/FajT^ www.metcaps.cbm F e e d -T h ru C e ra m ic C a p a c it o r s W o r ir in t V o lt a g e + 8 5 °C - : + I2 S * C : 200 W V D C I00 W V D C

Contextual Info: Material and Finish Body: High Temperature Thermoplastic, UL94V-0 Rated, Black Contacts: Phosphor Bronze, Gold Flash over Nickel on Contacts, Tin over Nickel on Termination Shield: SPCC, Nickel Plated Electrical Characteristics Contact Resistance: Before Test:

Contextual Info: Material and Finish Body: High Temperature Thermoplastic, UL94V-0 Rated, Black Contacts: Phosphor Bronze, Gold Flash over Nickel on Contacts, Tin over Nickel on Termination Shield: SPCC, Nickel Plated Electrical Characteristics Contact Resistance: Before Test:

w 13001

Abstract: transistor s 13001 13001 transistor 13001 transistors 13001
Contextual Info: 99 DIE LED ARRAY 2 !./$% ",5%!7'   2 - . sExcELLENttHErMAL CONDUctivity    CATHODE ",!#+!7'   ª"%!-!.',%    FEATURES sªANDªBEAMANGLES -).   !./$% ",5%!7'