1300 TRANSISTOR Search Results

CYIL1SM1300AA-GBC

Abstract: LUPA-1300-1 B7133 E14102 FillFactory IBIS5A LUPA1300 CYIL1SC1300AA-GAC IBIS5A-1300 LUPA-1300 LUPA-1300-C
Contextual Info: LUPA-1300 Datasheet LUPA-1300 1.3 M Pixel High Speed CMOS Image Sensor Datasheet Cypress Semiconductor Corporation Contact info@Fillfactory.com San Jose, CA 95134 408-943-2600 Document # : 38-05711 Rev.* Revision 3.1 3901 North First Street Page 1 of 48

Reflective Optical Sensor focused

Abstract: light sensor 3 bin Reflective Optical Sensor high resolution transistor a999 HBCS-4999 HBCS-A998 HBCS-A999 HEDS1300 HEDS-1300
Contextual Info: Optical Reflective Sensor Technical Data HEDS-1300 Precision Resolution Sensor Features Description • Focused Emitter and Detector in a Single Package • TO5 Package • Binning of Sensors by Photocurrent Ipr The HEDS-1300 sensor is fully integrated modules designed for

FillFactory

Abstract: FillFactory IBIS5A IBIS5-A-1300-M-2 CYII5SC1300AA-HAC CYII5SC1300AA-QAC CYII5SM1300AA-HBC CYII5SM1300AA-QBC IBIS5-A-1300-C-1 IBIS5-A-1300-C-2 IBIS5-A-1300-M-1
Contextual Info: IBIS5-A-1300 Datasheet IBIS5-A-1300 1.3M Pixel Dual Shutter Mode CMOS Image Sensor Datasheet Cypress Semiconductor Corporation 3901 North First Street San Jose, CA 95134 408-943-2600 Contact info@Fillfactory.com Document #: 38-05710 Rev.* Revision 1.3 Page 1 of 67

IBIS5-B-1300

Abstract: CYII5FM1300AB JESD22 CMOS global shutter high speed CMOS global shutter cmos IMAGE SENSOR evaluation board
Contextual Info: IBIS5-B-1300 CYII5FM1300AB 1.3 MP CMOS Image Sensor Description Table 1. The IBIS5-B-1300 is a solid state CMOS image sensor that integrates the functionality of complete analog image acquisition, digitizer, and digital signal processing system on a single chip.

high speed CMOS global shutter

Abstract: CYII5FM1300AB CYII5FM1300AB-QDC CYII5FM1300AB-QWC CYII5FM1300-EVAL CYII5SC1300AB-QDC CYII5SC1300-EVAL CYII5SM1300AB-QDC CYII5SM1300AB-QWC CYII5SM1300-EVAL
Contextual Info: IBIS5-B-1300 CYII5FM1300AB 1.3 MP CMOS Image Sensor Description Table 1. The IBIS5-B-1300 is a solid state CMOS image sensor that integrates the functionality of complete analog image acquisition, digitizer, and digital signal processing system on a single chip.

HEDS 1000

Abstract: 5988-4570EN
Contextual Info: HEDS-1300 Optical Reflective Sensor Data Sheet Precision Resolution Sensor Description Features The HEDS-1300 sensor is fully integrated modules designed for applications requiring optical reflective sensing. The module contains an LED emitter at the appropriate wavelengths and a matched I.C.

high speed CMOS global shutter

Abstract: CMOS global shutter CYII5FM1300AB IBIS5-B-1300 JESD22
Contextual Info: IBIS5-B-1300 CYII5FM1300AB 1.3 MP CMOS Image Sensor Description Table 1. The IBIS5-B-1300 is a solid state CMOS image sensor that integrates the functionality of complete analog image acquisition, digitizer, and digital signal processing system on a single chip.

transistor ktc 1270

Abstract: t3th
Contextual Info: IBIS5-B-1300 CYII5FM1300AB 1.3 MP CMOS Image Sensor Description Table 1. The IBIS5-B-1300 is a solid state CMOS image sensor that integrates the functionality of complete analog image acquisition, digitizer, and digital signal processing system on a single chip.

CYII5FM1300AB-QDC

Abstract: IBIS5-B-1300
Contextual Info: IBIS5-B-1300 CYII5FM1300AB 1.3 MP CMOS Image Sensor Description Table 1. The IBIS5-B-1300 is a solid state CMOS image sensor that integrates the functionality of complete analog image acquisition, digitizer, and digital signal processing system on a single chip.

TM1305

Abstract: Trimedia TM-1300 TM1310 CCIR656 H263 SMS2902 TM1300 TM-1300
Contextual Info: TM-1300 Power Consumption Study By Luis Lucas created: 02/28/2001 Summary The purpose of this application note is to provide information on power consumption for systems powered by TM-1300. The presented results are from measurements conducted by Philips on applications currently owned by Philips.

IBIS5-B-1300

Abstract: CYII5FM1300AB JESD22 1024-PIXEL 31i-B
Contextual Info: IBIS5-B-1300 CYII5FM1300AB 1.3 MP CMOS Image Sensor Description The IBIS5-B-1300 is a solid state CMOS image sensor that integrates the functionality of complete analog image acquisition, digitizer and digital signal processing system on a single chip. This 1.3-mega pixel 1280 x 1024 CMOS active pixel

IBIS5-B-1300

Abstract: cmos IMAGE SENSOR global shutter JESD22 CYII5FM1300AB CYII5SM1300AB-QDC
Contextual Info: IBIS5-B-1300 CYII5FM1300AB 1.3 MP CMOS Image Sensor Description The IBIS5-B-1300 is a solid state CMOS image sensor that integrates the functionality of complete analog image acquisition, digitizer and digital signal processing system on a single chip. This 1.3-mega pixel 1280 x 1024 CMOS active pixel

-20/LUPA1300-2

Contextual Info: THIS SPEC IS OBSOLETE Spec No: 38-05711 Spec Title: CYIL1SM1300AA LUPA-1300 1.3 MPXL HIGH SPEED CMOS IMAGE SENSOR Sunset Owner: Nivea Antao NVEA Replaced by: None  CYIL1SM1300AA LUPA-1300 1.3 MPxl High Speed CMOS Image Sensor Main Features The main features of the image sensor are identified as:

Contextual Info: t 67C 00233 T? 4613303 HUGHES AIRCRAFT CO* HUGHES-, MICROWAVE PRDTS D* 7 ~ 3 9 - G S ~ □□□□233 fl | G aA sFET PR OD U CTS DESCRIPTION Hughes model number C2421H-1300 and C2422H-1300 are single cell and dual cell 13 GHz broadband GaAs power FET chips mounted on internally matched chip carriers. The

ATC800B1

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 0, 6/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for applications operating at 1300 MHz.

BU205

Abstract: BU204 TO115
Contextual Info: HORIZONTAL DEFLECTION TRANSISTOR NPN .specifically designed for use in large screen color deflection circuits. BU204 Boca Semiconductor Corp. BSC http ://www.bocasemi.com FEATURES: * Collector-Emitter Sustaining Voltage v c e x = 1300 V Min. - BU204 = 1500 V (Min.)-BU205

BU205

Abstract: BU204
Contextual Info: ¿2&M0SPEC HORIZONTAL DEFLECTION TRANSISTOR NPN .specifically designed for use in large screen color deflection circuits. BU204 BU205 FEATURES: * Collector-Emitter Sustaining Voltage v c e x = 1300 V Min. - BU204 = 1500 V (Min.)-BU205 * Glassivated Base-Collector Junction

4687 transistor

Abstract: transistor 4687 BXO9328 1776
Contextual Info: Available as: VOLTAGE CONTROLLED OSCILLATOR TOM9328 800 - 1300 MHz TOM9328, 4 Pin TO-8 T4 TON9328, 4 Pin Surface Mount (SM3) BXO9328, Connectorized Housing (H1) Features ! ! ! ! Broad Tuning Range Low Noise Bipolar Transistor Operating Case Temp. -55 ºC to + 85 ºC

4687 transistor

Abstract: transistor 4687 C 5074 transistor
Contextual Info: A va ila b le as: VOLTAGE CONTROLLED OSCILLATOR TOM9328, 4 Pin TO-8 T4 TON9328, 4 Pin Surface Mount (SM3) B X09328, Connectorized Housing (H1) _ 800-1300 M H z Features • ■ ■ ■ Broad Tuning Range Low Noise Bipolar Transistor

PSH10

Abstract: ZTX327 PS5179
Contextual Info: Section S: Bipolar Transistors RF T ra n s is to rs E-Line N PN RF fy 400 to 1300 M H z Transistors (Pq = up to 5 0 0 m W max) Pinout Details: 1-Collector, 2-Base,

transistor bu208

Abstract: BU208 TRANSISTOR 1300
Contextual Info: Silicon Power Transistor BU208 Technical Data Typical Applications : These devices are designed for horizontal deflection output stages of large screen colour deflection circuits. Specification Fetaures : F High Voltage NPN Silicon Power Transistor F 5 Amp / 1300 V device in TO-204AA [ TO-3 ] package

op-160

Contextual Info: High-Speed, Current Feedback _ Operational Amplifier ANALOG DEVICES OP-160 FEATURES • Easy To Use - Drives Large Capacitive Loads • Very High Slew Rate Av = + 1 . 1300 V/ps Typ • Bandwidth (Av = + 1 ). 90MHzTyp

Contextual Info: 1300 Henley Court Pullman, WA 99163 509.334.6306 www.digilentinc.com ChipKIT PRO MX4 Board Reference Manual Revised November 7, 2013 This manual applies to Rev C of the board Table of Contents Table of Contents . 1

Contextual Info: BLF644P Broadband power LDMOS transistor Rev. 1 — 11 June 2013 Objective data sheet 1. Product profile 1.1 General description A 70 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1300 MHz. The excellent