130/SKN 21 Search Results

semikron SKa 5/12

Abstract: skna 26 skn diodes skn 72/12
Contextual Info: Section 8: Rectifier Diodes Type V rrm IfRMS V SK 1 SK 3 SKN 2,5 SKN 5 SKN 20 SKR 20 SKN 26 SKR 26 SKN 45 SKR 45 SKN 71 SKR 71 SKN 100 SKR 100 SKN 130 SKR 130 SKN 240 SKR 240 SKN 320 SKR 320 SKN 400 SKN 450 SKN 501 SKN 670 SKN 1500 SKN 2000 SKN 3000 SKN 3400

Semikron 240/04 diode data

Abstract: SKN 130/12 SKR 130/12 SEMIKRON SKN 130/12 SKR 130/12 SKN100-02 RP 130 240 SKN 130/02 skn 220 semikron 130/12 130/SKN 21 A2S11
Contextual Info: VRSM VRRM IFRMS maximum values for continuous operation 200 A 260 A 500 A 125 A IFAV (sin. 180; Tcase = 100 °C) 165 A 320 A Rectifier Diodes SKN 100 SKN 130 SKN 240 SKR 100 SKR 130 SKR 240 V 200 400 800 1200 1400 1600 1800 SKN 100/02 100/04 100/08 100/12

SKN45/06

Contextual Info: s e MIKRON Rectifier Diodes Ifrms maximum values for continuous operation 80 A | 150 A Vrsm Vrrm fav 50 A (118 °C) V $ $ SKN 45 SKN 70 SKN 71 (sin. 180; Tease = •• ■) 95 A (100 °C) $ $ $ SKR 45 SKR 70 SKR 71 200 SKN45/02 SKR45/02 SKN70/02 SKR70/02 SKN71/02* SKR71/02*

SKN+26/04

Contextual Info: 51E D • âl3bb?l 0GG3T17 3T4 « S E K Û 5EMIKR0N SEMIKRON INC 41 A | Ifav sin. 1 8 0 ; T case 26 trr = V 400 Fast Recovery Rectifier Diodes —p Ifrms (maximum values for continuous operation V rsm V rrm A 150 ns SKN2F17/04 SKN 2 F 17/04 UNF SKN 2 F17/06

skiip 613 gb

Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
Contextual Info: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2

Semikron SKR 21

Abstract: semikron skn 50/04 semikron skr 50/08 SKN 21 semikron skn 50/04 SKR 50 diode skn 21 diode skn 50/10 Semikron SKR 40 /12
Contextual Info: VRSM VRRM IFRMS maximum values for continuous operation 100 A Fast Recovery Rectifier Diodes IFAV (sin. 180; Tcase = . . . ) 50 A (105 °C) 50 A (95 °C) SKN 2 F 50 SKR 2 F 50 trr = 200 ns V 400 SKN 2 F 50/04 SKN 2 F 50/04 UNF SKR 2 F 50/04 SKR 2 F 50/04 UNF

Contextual Info: SENIKRON INC DbE D | ûl3bb?l GDGiaiD b | 7 "~ O f - Rectifier Diodes TVpes 1\ Gleichrichterdioden Vrsm Vrrm If r m s V A A Ifav Ifav Tease Tease =125°C = 100°C I 7 A 2- / Diodes redresseuses VF Ir 25 °C. It Tvjmax. Tv, max. Rtheh If V(TO) Tvjmax. Rthje

varistor SKVA 20 B 550

Abstract: semikron skvc 20 a 130
Contextual Info: s e MIKRDn 14.6 Metaloxide ZnO Varistors Types Vv V dc V DC + 10% max. max. (b e = 1 mA) T 1)2) 'p ip 1»3 » Wp1>3> P av max. max. max. max repetitive nonrepetitive A Tamb - 150 4500 24,6 0,6 150 4500 30,1 0,6 200 6500 79,3 1,0 150 4500 64,5 0,6 420 150

Semikron SKR 141

Abstract: skn diodes 140F12
Contextual Info: VRSM VRRM Fast Recovery Rectifier Diodes IFRMS maximum values for continuous operation 260 A IFAV (sin. 180; Tcase = 85 °C) 160 A 168 A trr = 500 ns trr = 800 ns SKN 135 F SKN 136 F SKN 140 F SKN 141 F V 800 SKN 135 F 08 SKN 136 F 08 1000 SKN 135 F 10 SKN 136 F 10

Contextual Info: s e m ik r o n Fast Recovery Rectifier Diodes If bm s maximum values for continuous operation V rsm V rrm 260 A Ifav (sin. 180; Tease = 85 °C) 1000 1200 168 A trr = 500 ns trr = 800 ns $ V 800 160 A SKN SKN SKN SKN SKN SKN 135 136 135 136 135 136 $ SKR

Contextual Info: s e M IK R D n V rsM V rrm dv/ V dhm dt cr V 900 1300 1300 1500 1700 1900 2100 2300 ItAV (Sin. 180; Tease = •- .) V/(iS 150 A (85 °C) 172 A (81 °C) 150 A (85 °C) 172 A (81 °C) V 800 1200 1200 1400 1600 1800 2000 2200 SKKT 131/08 D 131/12 D 131/12 E

Contextual Info: SKS 1500F B6HK 1010 V16 Electrical Characteristics Symbol Conditions min Electrical Data TAMBIENT = 35°C ; No overload Maximum DC current ID Maximum AC voltage +/-10% VAC DC Bus voltage VBUS PTOTAL Maximum stack power Stack power loss (TAMBIENT = 35°C)

Contextual Info: SKS 1200F B6HK 800 V16 Electrical Characteristics Symbol Conditions min Electrical Data TAMBIENT = 35°C ; No overload Maximum DC current ID Maximum AC voltage +/-10% VAC DC Bus voltage VBUS Maximum stack power PTOTAL Stack power loss (TAMBIENT = 35°C)

Contextual Info: SKS 1200F B6HK 800 V16 SU Electrical Characteristics Symbol Conditions min Electrical Data TAMBIENT = 35°C ; No overload Maximum DC current ID Maximum AC voltage +/-10% VAC DC Bus voltage VBUS PTOTAL Maximum stack power Stack power loss (TAMBIENT = 35°C)

diode SKN molybdenum

Contextual Info: s e m ik r d n Section 15: SEMICELL Power Semiconductor Chips The following tables contain our standard types. Other types or selections are available on special request. Please contact your SEMIKRON office. SEMICELL® Rectifier Diode Chips , T^ es $ Y s k n 3

170M6462

Abstract: 170H3006 170M7031 170H3027 170M8554 170M8608 170M2666 170M7636 170M7595 170M6814
Contextual Info: High Speed Fuses Square Body Fuses General Information Introduction Square Body Contents Page Application Information 115-116 Volts IEC/UL Size 000,00 690/700 1*, 1, 2, 3 1*, 2, 3 4 23, 24 00, 1, 2, 3 00 1000 1*, 1, 2, 3 4 24 1*, 1, 2, 3 1250/1300 1000-2000

OP17

Contextual Info: ANALOG DFVICFS TNC 51E ANALOG DEVICES □ FEATURES All Devices • Significant Performance Advantages over LF155,156 and 157 Devices. • Low Input Offset Voltage. 500mVMax • Low Input Offset Voltage D r ift .2.0juV/° C

Contextual Info: 60MHz, 2000V/fis Monolithic Op Amp AN ALO G DEVICES FEATURES Wide Bandwidth: 60MHz at Gain of -1 33MHz at Gain of -1 0 Very High Output Slew Rate: Up to 2000V/|is 20MHz Full Power Bandwidth, 20V pk-pk, RL=500il Fast Settling: 100ns to 0.1% 10V Step Differential Gain Error: 0.03% at 4.4MHz

Contextual Info: PRELIM INARY- - October 1995 Edition 2.1 = FUJITSU PRODUCT PROFILE SHEET MB8 117805A-60/-70 CMOS 2M X 8BIT HYPER PAGE MODE DYNAMIC RAM CM O S 2,097,152x 8B IT Hyper Page Mode Dynam ic RAM The Fujitsu MB8117805A is a fully decoded CMOS Dynamic RAM DRAM that contains

PD7811

Abstract: capacitor MKL d78pg11 153 SP-J eprom 2732A nec uPD7811 smh 210
Contextual Info: ¿/PD78PG11 HIGH-END, 8-BIT, SIN G LE -C H IP N M 0 S m ic r o c o m p u t e r W ITH P IG G Y B A C K EPRO M W ML W NEC Electronics Inc. Description Pin Configuration The NEC /UPD78PG11 is a prototyping device used to emulate the masked-ROM //PD7811. The user can

NEC 7808

Abstract: 7809 A PI 505 7808 A PD7808 7809 pi uPD7809 PD7811 7808 nec
Contextual Info: SEC NEC Electronics Inc. yuP D 7807/08/09 HIGH-END, 8-B IT, SINGLE-CHIP NMOS MICROCOMPUTERS WITH COMPARATOR AND 8K ROM PRELIMINARY INFORMATION D escription Pin Configuration The yuPD7807//uPD7808///PD7809 single chip m icro­ com puter augm ents the high-end NEC fam ily of 8 -b it

uPD7809

Abstract: PD7808 PD78P09
Contextual Info: M ié W NEC Electronics Inc. ¿/PD78P09 HIGH-END, 8-BIT, SIN G LE-CH IP n m o s m ic r o c o m p u t e r WITH COMPARATOR AND 8K EPROM Description Pin Configuration T h e /¿PD78P09 single-chip m icrocom puter augm ents the high-end N E C fam ily of 8 -bit m icrocom puters with

170M8554

Abstract: bussmann Fuse 450 amps 250 volts max zs FM09 PS Jet 20A 300v fuse
Contextual Info: Circuit Protection Products for the Electrical Industry New Products for All Markets For product data sheets, visit www.cooper.bussmann.com/products/datasheet.asp Circuit Protection Products for the Electrical Industry Table of Contents RED indicates NEW information

Contextual Info: SEC |i.PD17005 S IN G L E C H IP M IC R O C O N T R O LLE R FO R D IG IT A L TU N IN G S Y S T E M The ¿IPD17005 is a 4 bit single chip C M O S microcontroller equipped with the hardware exclusively for digital tuning systems. Adoption o f the ¿¿PD17000 architecture enables its C PU to directly operate the data memory, perform various