13-AB TRANSISTOR Search Results

SD2903

Contextual Info: SD2903 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS . . . PRELIMINARY DATA 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB .230 x .360 4L FL M229 ORDER CODE BRANDING SD2903 SD2903 DESCRIPTION The SD2903 is a gold metallized N-channel MOS

Contextual Info: SGS-THOMSON SD2903 MMMIlLIlMMSiDÊS RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS P R E L IM IN A R Y D A T A 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB DESCRIPTION The SD2903 is a gold metallized N-channel MOS field effect RF power transistor. The SD2903 is

IC CD4011B

Abstract: CD4011B CD4011BMS CD4012B CD4012BMS CD4023B CD4023BMS
Contextual Info: CD4011BMS, CD4012BMS CD4023BMS CMOS NAND Gates November 1994 Features Pinouts • High-Voltage Types 20V Rating CD4011BMS TOP VIEW • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V A 1 14 VDD B 2 13 H J = AB 3 12 G K = CD 4 11 M = GH • Buffered Inputs and Outputs

CLASS AB

Abstract: NEL2012F03-24
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR NEL2012F03-24 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: PACKAGE OUTLINE F03 5 W Class A, 16 W Class AB • USEABLE FROM 1.8 TO 2.0 GHz 2.8±0.2 • HIGH LINEAR GAIN:

transistor 40410

Abstract: 40410 Transistor 300W TRANSISTOR AUDIO AMPLIFIER TRANSISTOR 40391 40410 40988 200W AMPLIFIER 40362 40636 TA8201
Contextual Info: POWER TRANSISTOR TYPES FOR AUD IO -FREQ U ENC Y Power Output 16Q 6 .5 16 4n 18 45 Output Transistors 8Ì2 Imped. Circuit P -N -P 40980 (2N 6111) True Comp. 40816 (2N 5495) (2N 6269) 40817 (2N 6111) - Comp. Darlington BDX 33 2N6386 BDX 34 TA8201 - True Comp.

C 5478 transistor

Abstract: transistor 5478 7807 transistor resistor 39 ohm NEL2004 1N4454 1N5254 NEL2004F02-24 173278 LARGE SIGNAL IMPEDANCES
Contextual Info: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB • USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) BASE 3±0.2 2±0.2 2±0.2 2 X φ3.2±0.3

Wavetek 395

Abstract: J280 MC13156F 143-18J12 hp3780A Wavetek 164 MPS901 toko transformer IF 455 khz colpitts oscillator vhf
Contextual Info: MC13156 Wideband FM IF System The MC13156 is a wideband FM IF subsystem targeted at high performance data and analog applications. Excellent high frequency performance is achieved at low cost using Motorola’s MOSAIC 1.5 bipolar process. The MC13156 has an onboard grounded collector VCO transistor

lc 945 p transistor NPN

Abstract: lc 945 p transistor transistor LC 945 lc 945 transistor
Contextual Info: ERICSSON ^ PTB 20003 4 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20003 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 4 Watts minimum output power, it may be used for

DICLAD522T

Abstract: NEL2001 NEL2004 NEL2012 NEL2035 NEL2035F03-24 V06C ZO 189 transistor
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR NEL2035F03-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier OUTLINE DIMENSIONS Unit: mm 2.8 ±0.2 NEL2035F03-24 of NPN epitaxial microwave power transistors 2 It incorporates emitter ballast resistors, gold metallizations and

"class AB Linear"

Abstract: hf class AB power amplifier mosfet HF100-12 HF TRANSISTORS linear mosfet HF20-12F
Contextual Info: RF Power Transistors HFSSB ASI HF transistors are characterized for broadband amplifier operation, 2-30MHz devices provide high linear power output for a variety of military, commercial and amateur communication equipment. 12.5 Volt, Class AB Linear BIAS P out

short circuit protection schematic diagram

Abstract: 15V Regulator dpak L78M00AB L78M00AC L78M05ACDT L78M06ACDT L78M08ACDT L78M09ACDT L78M10ACDT L78M12ACDT
Contextual Info: L78M00AB/AC SERIES PRECISION 500mA REGULATORS . . . . OUTPUT CURRENT UP TO 0.5A OUTPUT VOLTAGES OF 5; 6; 8; 9: 10; 12; 15; 18; 20; 24V THERMAL OVERLOAD PROTECTION SHORT CIRCUIT PROTECTION OUTPUT TRANSISTORS SOA PROTECTION ± 2% OUTPUT VOLTAGE TOLERANCE

acrian RF POWER TRANSISTOR

Abstract: 1000 class ab power amplifier LBAA s 46120 Scans-00115699
Contextual Info: 0182998 ACRIAN "t? INC ' 3S- * 7 de I G i a s ^ a DDGisa? □ 46104 GENERAL DESCRIPTION 4 WATTS - 28 VOLTS 1000 MHz The 46104 is a stable common emitter transistor capable of providing 4 watts of CW RF output power across the 500-1000 MHz frequency band. This transistor is specifically designed

MRF485

Abstract: MRF477 Motorola transistors MRF475 Motorola transistors MRF485 MRF466 MRF476 Motorola transistors MRF477 UHF-800 mrf464 MRF475
Contextual Info: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de­ signed for operation in RF Power Amplifiers. These transistors

acrian RF POWER TRANSISTOR

Abstract: ACRIAN acrian RF POWER TRANSISTOR 300 w T-33-O acrian inc
Contextual Info: n 18299 8 A C R I A N 97D 0 1229 INC T7 ACRIAN INC D T~— 33- O DE | 0 1 0 2 ^ 0 DGDiaai 3 46110 GENERAL DESCRIPTION 10 WATTS - 28 VOLTS _ 1000 MHz The 46110 is a stable common emitter transistor capable of providing 10 watts of CW RF output power across the 500-1000 MHz frequency

N15W

Abstract: acrian 0510-50 ACRIAN 0510-50 acrian inc
Contextual Info: 0182998 ACRIAN INC T7 ACRIAN INC DE I OlöSTTfi — GENERAL T - 3 'I - DGD1E33 S m m 0510-10 DESCRIPTION 10 WATTS - 28 VOLTS 500-1ÖÖÖ? MHz The 0510-10 is a common emitter silicon power transistor providing 10 watts of CW power across a 500-1000 frequency band. Gold metallization

9434

Abstract: transistor 1877 ADC 50 Ghz p 477 RF 1501 RF NPN POWER TRANSISTOR 3 GHZ 200 watts
Contextual Info: e PTB 20074 14 watts, 1.477–1.501 GHz Cellular Radio RF Power Transistor Description The 20074 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14 watts minimum output power, it may be used for both CW and PEP

TIC55

Abstract: PTB20062 tic 55
Contextual Info: ERICSSON ^ PTB 20062 150 Watts, 450-500 MHz RF Power Transistor D escription The 20062 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 450 to 500 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications.

C2060

Abstract: 2060D c3075
Contextual Info: Photo Transistors T yp e No. TPS601A TPS603A TPS604 Features TO -18 with lens can <t>3 T0-18(with lenscanand base) Max mum Ratings (Ta= 25°C) Collector Emitter Voltage Collector Power Dissipation Operating Temperature (m W ) (V ) CC ) 40 150 —40~+125

transistor c128

Abstract: 55FT
Contextual Info: C1-28/C1-28Z _ 1Watts "28 Volts’ Class C GHz TECHNOLOGY DsfCO Ill 400 IV lH Z »f-M IC »O W A V e SILICO N >OWE> « A H S IS T O H Î GENERAL DESCRIPTION CASE OUTLINE The Cl-28 / Z is a COMMON EMITTER transistor capable of providingl Watts of Class AB or C, RF output power in the band 100 - 400 MHz. This

420 NPN Silicon RF Transistor

Contextual Info: e PTB 20030 15 Watts, 420–470 MHz RF Power Transistor Description The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for

Contextual Info: MOTOROLA Order this document by MRF1000MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1000MA MRF1000MB . . . designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems.

TRANSISTOR REPLACEMENT GUIDE

Abstract: PC-17K1 PC17K1 transistor DF 50 bf replacement transistor kpc744 k4n35 pc 17k1 bd bf K3610
Contextual Info: LUMEX OPT O/ CO MP ONEN TS INC 2TE D Sblblia GOOObSb 7 r-m-ÿ 3 Photo Couplers H Y B R ID A S S E M B L IE S A P P L IC A T IO N : Is o la to r/Im p e d a n c e c o n v e rte r N o ise S u p p re s so r GUIDE TO SPECIFICATION TRANSISTOR OUTPUT TYPE PACKAGE

POE-15

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 18801 PH1819-15N bipolar power transistor wacom
Contextual Info: * s z E f FEYi = -= -=-= = ,’ E an AMP company Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz . 15W PH1819-15N v2.00 Features NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 15 Watts PEP

BLF369-NXP

Abstract: transistor r8 BLF369 EZ90-25-TP VHF transmitter circuit
Contextual Info: BLF369 Multi-use VHF power LDMOS transistor Rev. 04 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description A general purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz.