13 MHZ MOSFET Search Results

CCD133ADC

Abstract: ccd133 CCD133A fairchild ccd "Linear image sensor" CCD143A linear ccd radiation fairchild
Contextual Info: CCD133A 1024-Element High Speed Linear Image Sensor FEATURES • • • • • • • • • • 1024 x 1 photosite array 13µm x 13µm photosites on 13µm pitch High speed: up to 20 MHz data rate Enhanced spectral response Low dark signal High responsivity

CCD153

Abstract: CCD153ADC ccd133 fairchild ccd water surface level element Fairchild Imaging CCD Contact image sensor fairchild CCD153A
Contextual Info: CCD 153A 512-Element High Speed Linear Image Sensor FEATURES • • • • • • • • • • 512 x 1 photosite array 13µm x 13µm photosites on 13µm pitch High speed: up to 20 MHz data rate Enhanced spectral response Low dark signal High responsivity

NEC 9001

Abstract: 2SK2597 J549 NEC MOSFET PUSHPULL
Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION PACKAGE DRAWING Unit: mm • High output, high gain PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)

ccd133

Abstract: CCD133ADC ccd board Circuit Schematic Diagram Electronic linear ccd radiation fairchild CCD143A CCD133A Fairchild Imaging CCD133DB ccd143 CCD Linear Image Sensor
Contextual Info: CCD 133A 1024-Element High Speed Linear Image Sensor FEATURES • • • • • • • • • • 1024 x 1 photosite array µm pitch 13 µm x 13 µm photosites on 13µ High speed: up to 20 MHz data rate Enhanced spectral response Low dark signal High responsivity

Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR NEM0995F06-30 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES PACKAGE DRAWING Unit: mm High output, High gain Po = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)

NEC 9001

Abstract: NEC MOSFET PUSHPULL EM0995F06-30
Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR NEM0995F06-30 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES • PACKAGE DRAWING Unit: mm High output, High gain Po = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)

VARIABLE capacitor

Abstract: arco 462 capacitor 2943666661
Contextual Info: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 400 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz

5 - 30pf variable capacitor

Abstract: variable capacitor
Contextual Info: Micmsemi • m m RF Products m 140 COMMERCE DRIVE Progress Powered by Technology MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 400 MHz 15 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz

Arco 423

Abstract: VARIABLE capacitor arco 462 capacitor
Contextual Info: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 400 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz

SD2903

Contextual Info: SD2903 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ ■ ■ ■ GOLD METALLIZATION 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL DESCRIPTION

Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES • • • PACKAGE DRAWING Unit: mm High output, high gain Po = 100 W, G l = 13 dB (TYP.) (f = 900 MHz)

variable capacitor

Abstract: 10uF 63V Electrolytic Capacitor Arco 423 arco 462 capacitor 2943666661 423 variable capacitor capacitor 10uF arco 463 10uf 63v capacitor 462 variable capacitor
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4280 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz CLASS A OR AB DESCRIPTION:

30pf variable capacitor

Abstract: VARIABLE capacitor arco 463 capacitor 10uF/63V MS4080 2943666661 arco 10uf 63v capacitor .5PF Electrolytic capacitor 180PF
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4080 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 15 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz CLASS A OR AB DESCRIPTION:

SD2903

Abstract: Dow Corning 140 M229
Contextual Info: SD2903  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ ■ ■ ■ GOLD METALLIZATION 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL DESCRIPTION

5 - 30pf variable capacitor

Abstract: variable capacitor 30pf variable capacitor
Contextual Info: Micmsemi • m m RF Products m 140 COMMERCE DRIVE Progress Powered by Technology MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 400 MHz 15 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz

Contextual Info: SD2903 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ ■ ■ ■ GOLD METALLIZATION 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL DESCRIPTION

Contextual Info: DB-960-90W 90W / 26V / 925-960 MHz PA using 2x PD57060S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 90 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY

SD2903

Contextual Info: SD2903 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS . . . PRELIMINARY DATA 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB .230 x .360 4L FL M229 ORDER CODE BRANDING SD2903 SD2903 DESCRIPTION The SD2903 is a gold metallized N-channel MOS

PD57060s

Abstract: ATC100B DB-960-90W 930 diode smd C07 smd 6 pin TRANSISTOR SMD CODE te
Contextual Info: DB-960-90W 90W / 26V / 925-960 MHz PA using 2x PD57060S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 90 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY

NEC MOSFET PUSHPULL

Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES • PACKAGE DRAWING Unit: mm • • • High output, high gain Po = 100 W, G l = 13 dB (TYP.) (f = 900 MHz)

tekelec 630

Abstract: AT27273 00-CHA-101 501 CHB SPECIFICATIONS tekelec VJ1206Y104KXAT 501-CHB-8R2 Tekelec TA 501 CHB diod cms
Contextual Info: DB-960-60W 60W / 26V / 925-960 MHz PA using 1x PD57070S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W min. with 13 dB gain over 925 - 960 MHz • 10:1 LOAD VSWR CAPABILITY

smd transistor 2x

Abstract: 6 pin TRANSISTOR SMD CODE PA smd zener diode code DE TRANSISTOR SMD 2X zener diode 5v ATC100B capacitor c12 90 HYBRID 70 mhz smd p2 10K anaren 1304
Contextual Info: DB-960-90W 90W / 26V / 925-960 MHz PA using 2x PD57060S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 90 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY

ATC100B

Abstract: PD57045S DB-960-70W SUBSTRATE TEFLON-GLASS Er 2.55 SMD Transistor 30w ED135
Contextual Info: DB-960-70W 70W / 26V / 925-960 MHz PA using 2x PD57045S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY

DB-900-60W

Abstract: PD57070S
Contextual Info: DB-900-60W 60W / 26V / 869-894 MHz PA using 1x PD57070S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W min. with 13 dB gain over 869 - 894 MHz • 10:1 LOAD VSWR CAPABILITY