12V TRANSISTOR Search Results

ignition driver

Abstract: motorola automotive transistor coil ignition motorola transistor ignition BUZ111 AT350V HALL effect sensor 16L ignition module BUZ11 hall switch ignition ignition application
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA MC33191 SEMICONDUCTOR TECHNICAL DATA 12V IGNITION DRIVER Prototype Information SILICON MONOLITHIC INTEGRATED CIRCUIT Freescale Semiconductor, Inc. Automotive 12V ignition driver The MC33191 is for use in 12V ignition systems designed for use in

motorola automotive transistor coil ignition

Abstract: ignition driver HALL effect sensor 16L motorola transistor ignition BUZ111 MC33191P reluctance ignition module circuit Motorola hall ignition coil driver motorola
Contextual Info: MOTOROLA MC33191 SEMICONDUCTOR TECHNICAL DATA 12V IGNITION DRIVER Prototype Information SILICON MONOLITHIC INTEGRATED CIRCUIT Automotive 12V ignition driver The MC33191 is for use in 12V ignition systems designed for use in harsh automotive and industrial applications which require the capability of

MAX452

Abstract: MAX4524L MAX4524LETB MAX4524LEUB MAX4525L MAX4525LETB MAX4525LEUB
Contextual Info: 19-2940; Rev 0; 8/03 Low-Voltage, Single-Supply Analog Multiplexers/Switches Features ♦ +3V Logic-Compatible Inputs VIH = 2.0V, VIL = 0.8V ♦ +2V to +12V Supply Operation ♦ 100Ω On-Resistance with +12V Supply ♦ Guaranteed 10Ω On-Resistance Match at +12V

P12D

Abstract: P12D marking ZXT13P12DE6 ZXT13P12DE6TA ZXT13P12DE6TC marking p12d DSA0037465
Contextual Info: ZXT13P12DE6 SuperSOT4 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

ZXT10P12DE6

Abstract: ZXT10P12DE6TA ZXT10P12DE6TC Marking 717 DSA0037437
Contextual Info: ZXT10P12DE6 SuperSOT 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 65m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

TS16949

Abstract: ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA 2V150
Contextual Info: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications

MO-187

Abstract: ZXT12P12DX ZXT12P12DXTA ZXT12P12DXTC t12p12dx DSA0037452
Contextual Info: ZXT12P12DX SuperSOT4 DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 47m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

T14P12DX

Abstract: MO-187 ZXT14P12DX ZXT14P12DXTA ZXT14P12DXTC DSA003747
Contextual Info: ZXT14P12DX SuperSOT4 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 16m ; IC= -6A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

TS16949

Abstract: ZXTN25012EFH ZXTP25012EFH ZXTP25012EFHTA
Contextual Info: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = 4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to

Contextual Info: 2SD2702 / 2SD2674 Datasheet NPN 1.5A 12V Middle Power Transistor lOutline Parameter Value VCEO IC TUMT3 TSMT3 Collector Collector 12V 1.5A Base Base Emitter Emitter 2SD2674 SC-96 2SD2702 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1732, 2SB1709

4420 Transistor

Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.

TS16949

Abstract: ZXTN25012EZ ZXTP25012EZ ZXTP25012EZTA
Contextual Info: ZXTP25012EZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -12V hFE > 500 IC cont = 4.5A VCE(sat) < -70mV @ 1A RCE(sat) = 45m⍀ PD = 2.4W Complementary part number ZXTN25012EZ Description C Packaged in the SOT89 outline this new low saturation 12V PNP

Contextual Info: 2SC5585 / 2SC5663 Datasheet NPN 500mA 12V Low Frequency Amplifier Transistors lOutline Parameter Value VCEO IC 12V 500mA VMT3 EMT3 Collector Collector Base Base Emitter Emitter 2SC5663 SC-105AA lFeatures 1) A Collector current is large.General Purpose. 2) Collector saturation voltage is low.

MLP832

Abstract: ZXTD1M832 ZXTD1M832TA ZXTD1M832TC
Contextual Info: ZXTD1M832 MPPS Miniature Package Power Solutions DUAL 12V PNP LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO= -12V; RSAT = 60m ; IC= -4A DESCRIPTION Packaged in the innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual transistors offer

la4630n

Abstract: 12v 40W stereo amplifier 40w bass amplifier using a 12v dc supply SIP18H ENN3227A 12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM LA4630-N
Contextual Info: Ordering number:ENN3227A Monolithic Linear IC LA4630N 9V/12V 3-Dimension Power IC for Radio Cassette Recorders Features Package Dimensions • Stereo section 9V/3Ω 3Wx2, 12V/3Ω 5W×2 : noise filter capacitorless power. • Super bus section 9V/3Ω 6W, 12V/3Ω 10W : output capacitor, B-S capacitorless power.

SC105A

Contextual Info: DTD543E series NPN 500mA 12V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC 12V 500mA 4.7kW 4.7kW IC(MAX.) R1 R2 VMT3 EMT3 OUT IN GND OUT IN GND DTD543EM (SC-105AA) lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 4.7kW.

Contextual Info: 2SB1697 Datasheet PNP -2A -12V Middle Power Transistor lOutline Parameter Value VCEO IC -12V -2A MPT3 Base Collector Emitter 2SB1697 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2661 3) Low VCE(sat) VCE(sat)= -0.18V(Max.)

Contextual Info: DTB543Z series PNP -500mA -12V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC -12V -500mA 4.7kW 47kW IC(MAX.) R1 R2 VMT3 EMT3 OUT OUT IN GND IN GND DTB543ZM (SC-105AA) lFeatures DTB543ZE SOT-416 (SC-75A) lInner circuit

Contextual Info: 2SD2661 Datasheet NPN 2A 12V Middle Power Transistor lOutline Parameter Value VCEO IC 12V 2A MPT3 Base Collector Emitter 2SD2661 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1697 3) Low VCE(sat) VCE(sat)=0.18V(Max.)

Contextual Info: 19-0169; Rev 0; 8/93 A lilX IÆ ±5V, ± 12V ± 15V D e d ic a te d M icroprocessor Voltage M onitors D e s c rip tio n _ A p p lic a tio n s Microprocessor Voltage Monitor +5V, -5V, +12V, -12V Supply Monitoring (MAX8215) +5V, -5V, +15V, -15V Supply Monitoring (MAX8216)

MAX736cpd

Contextual Info: y i/i/ix i/i/i 19-4749; Rev 1; 4/92 •5V, - 12V, -15V, and A djustable Inverting Current-M ode PWM R egulators _ Features ♦ Pre-Set -5V, -12V, -15V or Adjustable Outputs The MAX736/737/739 have fixed outputs of -12V, -15V, and -5V respectively. The MAX759 is adjustable from OV to -15V.

MLP832

Abstract: ZXTDA1M832 ZXTDA1M832TA ZXTDA1M832TC IC 630 marking DA1
Contextual Info: ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,

ZXTN25012EZ

Abstract: TS16949 ZXTN25012EZTA ZXTP25012EZ
Contextual Info: ZXTN25012EZ 12V NPN high gain transistor in SOT89 Summary BVCEO > 12V BVECX > 6V hFE > 500 IC cont = 6.5A VCE(sat) < 38mV @ 1A RCE(sat) = 25m⍀ PD = 2.4W Complementary part number ZXTP25012EZ Description C Packaged in the SOT89 outline this new ultra high gain, low saturation

zxtn25012efh

Abstract: transistor 1.25W
Contextual Info: ZXTN25012EFH 12V, SOT23, NPN medium power transistor Summary BVCEO > 12V BVECX > 6V hFE > 500 IC cont = 6A VCE(sat) < 32mV @ 1A RCE(sat) = 23m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline