12V TRANSISTOR Search Results

INTERMETal diode

Abstract: zener diode BN NMOS transistor 0.18 um CMOS BPSG
Contextual Info: 0.6um 1P3M High Voltage 12V / 12V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V,12V/12V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side

ignition driver

Abstract: motorola automotive transistor coil ignition motorola transistor ignition BUZ111 AT350V HALL effect sensor 16L ignition module BUZ11 hall switch ignition ignition application
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA MC33191 SEMICONDUCTOR TECHNICAL DATA 12V IGNITION DRIVER Prototype Information SILICON MONOLITHIC INTEGRATED CIRCUIT Freescale Semiconductor, Inc. Automotive 12V ignition driver The MC33191 is for use in 12V ignition systems designed for use in

motorola automotive transistor coil ignition

Abstract: ignition driver HALL effect sensor 16L motorola transistor ignition BUZ111 MC33191P reluctance ignition module circuit Motorola hall ignition coil driver motorola
Contextual Info: MOTOROLA MC33191 SEMICONDUCTOR TECHNICAL DATA 12V IGNITION DRIVER Prototype Information SILICON MONOLITHIC INTEGRATED CIRCUIT Automotive 12V ignition driver The MC33191 is for use in 12V ignition systems designed for use in harsh automotive and industrial applications which require the capability of

Contextual Info: 19-0169; Rev 0; 8/93 ±5V, ± 12V ± 15V D ed icated M icroprocessor Voltage M onitors _ A p p lic a tio n s M icroprocessor Voltage Monitor +5V, -5V, +12V, -12V Supply Monitoring (MAX8215) +5V, -5V, +15V, -15V Supply Monitoring (MAX8216)

TC8020

Abstract: 12V fast ZENER DIODE QFN-56 mosfet 12v high voltage pulser
Contextual Info: Product Summary Sheet Six Pair, N- and P-Channel Enhancement-Mode MOSFET +12V +12V AVDD +12V VDD1 TC8020 VPP1 VDD2 SP1 VDD2 OP1 GP1 DP1 VDD2 DN1 ON1 GN1 VNN1 SN1 Applications: ► Medical ultrasound imaging ► Piezoelectric transducer drivers ► Metal flaw detection

48V-to-12V

Abstract: voltage buffer 12v LTM4608 48V dc supply aoz4060sh LTC4218-12 LTC4222 LTC4261 LTC4354 LTC4357
Contextual Info: Reliable Power for AdvancedTCA Low Loss Fully Protected No-Opto High Efficiency Ideal Diode -48V Hot SwapTM -48V to 12V DC/DC -48V Complete Integrated Supply Buck DC/DC MicroTCA Compliant 12V 12V, 3.3V Hot Swap AMC 3.3V AdvancedTCA Connector Low Offset I2C Bus

Contextual Info: 2SA2030 / 2SA2018 / 2SA2119K Datasheet PNP -500mA -12V Low Frequency Amplifier Transistors lOutline Parameter Value VCEO IC -12V -500mA VMT3 EMT3 Collector Collector Base Base Emitter Emitter 2SA2030 SC-105AA lFeatures 1) A Collecotr current is large.General Purpose.

MAX452

Abstract: MAX4524L MAX4524LETB MAX4524LEUB MAX4525L MAX4525LETB MAX4525LEUB
Contextual Info: 19-2940; Rev 0; 8/03 Low-Voltage, Single-Supply Analog Multiplexers/Switches Features ♦ +3V Logic-Compatible Inputs VIH = 2.0V, VIL = 0.8V ♦ +2V to +12V Supply Operation ♦ 100Ω On-Resistance with +12V Supply ♦ Guaranteed 10Ω On-Resistance Match at +12V

P12D

Abstract: P12D marking ZXT13P12DE6 ZXT13P12DE6TA ZXT13P12DE6TC marking p12d DSA0037465
Contextual Info: ZXT13P12DE6 SuperSOT4 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

ZXT10P12DE6

Abstract: ZXT10P12DE6TA ZXT10P12DE6TC Marking 717 DSA0037437
Contextual Info: ZXT10P12DE6 SuperSOT 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 65m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

12V DC to 19V dC converter schematic diagram

Abstract: cd4007 application schematic diagram converter input 12v to 19v LTspice schematic diagram inverter 12v to 5v LTC1263 schematic diagram converter input 12v to 19v for LTC1263CS8 CD4007 S3C marking
Contextual Info: LTC1263 12V, 60mA Flash Memory Programming Supply U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The LTC 1263 is a regulated 12V, 60mA output DC/DC converter. It provides the 12V ±5% output necessary to program double byte-wide flash memories. The output

TS16949

Abstract: ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA 2V150
Contextual Info: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications

power window motor 12v

Abstract: wiper motor 12v dc PWM generator for IGBT 12v dc driver motor control mosfet ELECTRONIC BALLAST 12v window lift motor rain sensor "rain sensor" 12v dc motor igbt control motor power window hall sensor
Contextual Info: HIGH INTENSITY DISCHARGE H.I.D. LAMPS 100V Power MOSFET: STB50NE10 4 High voltage (breakdown at 500V) power transistor. Switch selection: IGBT: STGD3NB60SD Power MOSFET: STB9NB50 DC/DC Converter 12V 70V 12V B.C.C. 450 Hz / 50% duty cicle Transformer + Clamping

MO-187

Abstract: ZXT12P12DX ZXT12P12DXTA ZXT12P12DXTC t12p12dx DSA0037452
Contextual Info: ZXT12P12DX SuperSOT4 DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 47m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

Contextual Info: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications

T14P12DX

Abstract: MO-187 ZXT14P12DX ZXT14P12DXTA ZXT14P12DXTC DSA003747
Contextual Info: ZXT14P12DX SuperSOT4 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 16m ; IC= -6A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

Contextual Info: OBSOLETE - PLEASE USE ZXTC6717MC ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A DESCRIPTION

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTPS717MC ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A

Contextual Info: ZXT13P12DE6 SuperSOT4 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

TS16949

Abstract: ZXTN25012EFH ZXTP25012EFH ZXTP25012EFHTA
Contextual Info: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = 4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to

Contextual Info: 2SB1732 / 2SB1709 Datasheet PNP -1.5A -12V Middle Power Transistor lOutline Parameter Value TUMT3 -12V -1.5A VCEO IC TSMT3 Collector Collector Base Base Emitter Emitter 2SB1709 SC-96 2SB1732 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SD2702, 2SD2674

"marking S1"

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTP717MA ZXT1M322 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO= -12V; RSAT = 60m ; IC= -4A DESCRIPTION Packaged in the innovative 2mm x 2mm MLP Micro Leaded Package outline,

marking DA1

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTC6717MC ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A

npn 1.5a

Abstract: MARKING EW
Contextual Info: 2SD2652 Datasheet NPN 1.5A 12V Low Frequency Amplifier Transistors lOutline Parameter Value VCEO IC 12V 1.5A UMT3 Collector Base Emitter 2SD2652 SOT-323 SC-70 lFeatures 1) A Collecotr current is large.General Purpose. 2) Collector saturation voltage is low.