12V TRANSISTOR Search Results

INTERMETal diode

Abstract: zener diode BN NMOS transistor 0.18 um CMOS BPSG
Contextual Info: 0.6um 1P3M High Voltage 12V / 12V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V,12V/12V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side

ignition driver

Abstract: motorola automotive transistor coil ignition motorola transistor ignition BUZ111 AT350V HALL effect sensor 16L ignition module BUZ11 hall switch ignition ignition application
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA MC33191 SEMICONDUCTOR TECHNICAL DATA 12V IGNITION DRIVER Prototype Information SILICON MONOLITHIC INTEGRATED CIRCUIT Freescale Semiconductor, Inc. Automotive 12V ignition driver The MC33191 is for use in 12V ignition systems designed for use in

motorola automotive transistor coil ignition

Abstract: ignition driver HALL effect sensor 16L motorola transistor ignition BUZ111 MC33191P reluctance ignition module circuit Motorola hall ignition coil driver motorola
Contextual Info: MOTOROLA MC33191 SEMICONDUCTOR TECHNICAL DATA 12V IGNITION DRIVER Prototype Information SILICON MONOLITHIC INTEGRATED CIRCUIT Automotive 12V ignition driver The MC33191 is for use in 12V ignition systems designed for use in harsh automotive and industrial applications which require the capability of

Contextual Info: 19-0169; Rev 0; 8/93 ±5V, ± 12V ± 15V D ed icated M icroprocessor Voltage M onitors _ A p p lic a tio n s M icroprocessor Voltage Monitor +5V, -5V, +12V, -12V Supply Monitoring (MAX8215) +5V, -5V, +15V, -15V Supply Monitoring (MAX8216)

TC8020

Abstract: 12V fast ZENER DIODE QFN-56 mosfet 12v high voltage pulser
Contextual Info: Product Summary Sheet Six Pair, N- and P-Channel Enhancement-Mode MOSFET +12V +12V AVDD +12V VDD1 TC8020 VPP1 VDD2 SP1 VDD2 OP1 GP1 DP1 VDD2 DN1 ON1 GN1 VNN1 SN1 Applications: ► Medical ultrasound imaging ► Piezoelectric transducer drivers ► Metal flaw detection

48V-to-12V

Abstract: voltage buffer 12v LTM4608 48V dc supply aoz4060sh LTC4218-12 LTC4222 LTC4261 LTC4354 LTC4357
Contextual Info: Reliable Power for AdvancedTCA Low Loss Fully Protected No-Opto High Efficiency Ideal Diode -48V Hot SwapTM -48V to 12V DC/DC -48V Complete Integrated Supply Buck DC/DC MicroTCA Compliant 12V 12V, 3.3V Hot Swap AMC 3.3V AdvancedTCA Connector Low Offset I2C Bus

Contextual Info: 2SA2030 / 2SA2018 / 2SA2119K Datasheet PNP -500mA -12V Low Frequency Amplifier Transistors lOutline Parameter Value VCEO IC -12V -500mA VMT3 EMT3 Collector Collector Base Base Emitter Emitter 2SA2030 SC-105AA lFeatures 1) A Collecotr current is large.General Purpose.

MAX452

Abstract: MAX4524L MAX4524LETB MAX4524LEUB MAX4525L MAX4525LETB MAX4525LEUB
Contextual Info: 19-2940; Rev 0; 8/03 Low-Voltage, Single-Supply Analog Multiplexers/Switches Features ♦ +3V Logic-Compatible Inputs VIH = 2.0V, VIL = 0.8V ♦ +2V to +12V Supply Operation ♦ 100Ω On-Resistance with +12V Supply ♦ Guaranteed 10Ω On-Resistance Match at +12V

P12D

Abstract: P12D marking ZXT13P12DE6 ZXT13P12DE6TA ZXT13P12DE6TC marking p12d DSA0037465
Contextual Info: ZXT13P12DE6 SuperSOT4 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

ZXT10P12DE6

Abstract: ZXT10P12DE6TA ZXT10P12DE6TC Marking 717 DSA0037437
Contextual Info: ZXT10P12DE6 SuperSOT 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 65m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

12V DC to 19V dC converter schematic diagram

Abstract: cd4007 application schematic diagram converter input 12v to 19v LTspice schematic diagram inverter 12v to 5v LTC1263 schematic diagram converter input 12v to 19v for LTC1263CS8 CD4007 S3C marking
Contextual Info: LTC1263 12V, 60mA Flash Memory Programming Supply U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The LTC 1263 is a regulated 12V, 60mA output DC/DC converter. It provides the 12V ±5% output necessary to program double byte-wide flash memories. The output

TS16949

Abstract: ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA 2V150
Contextual Info: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications

MO-187

Abstract: ZXT12P12DX ZXT12P12DXTA ZXT12P12DXTC t12p12dx DSA0037452
Contextual Info: ZXT12P12DX SuperSOT4 DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 47m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

ZXTN07012EFF

Abstract: ZXTP07012EFF ZXTP07012EFFTA
Contextual Info: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications

TS16949

Abstract: ZXTN25012EFH ZXTP25012EFH ZXTP25012EFHTA
Contextual Info: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = 4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to

Contextual Info: 2SB1732 / 2SB1709 Datasheet PNP -1.5A -12V Middle Power Transistor lOutline Parameter Value TUMT3 -12V -1.5A VCEO IC TSMT3 Collector Collector Base Base Emitter Emitter 2SB1709 SC-96 2SB1732 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SD2702, 2SD2674

Contextual Info: OBSOLETE - PLEASE USE ZXTPS717MC ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A VR = 40V; VF = 500mV @1A ; IC=1A

Contextual Info: 2SD2702 / 2SD2674 Datasheet NPN 1.5A 12V Middle Power Transistor lOutline Parameter Value VCEO IC TUMT3 TSMT3 Collector Collector 12V 1.5A Base Base Emitter Emitter 2SD2674 SC-96 2SD2702 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1732, 2SB1709

4420 Transistor

Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.

ZXTN25012EFH

Abstract: ZXTP25012EFH TS16949 ZXTP25012EFHTA
Contextual Info: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = -4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to

LA4360N

Abstract: LA4630 LA4630N LA4360 12v 40W AUDIO AMPLIFIER CIRCUIT DIAGRAM 405BTL SIP18H 40w bass amplifier using a 12v dc supply 0.033uF N1003
Contextual Info: Ordering number:ENN3227B Monolithic Linear IC LA4630N 9V/12V 3-Dimension Power IC for Radio Cassette Recorders Features Package Dimensions • Stereo section 9V/3Ω 3Wx2, 12V/3Ω 5W×2 : NFcapacitorless power • Super bass section 9V/3Ω 6W, 12V/3Ω 10W : output capacitor, B-S capacitorless power

40w bass amplifier using a 12v dc supply

Abstract: 12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM la4630n LA4360 LA4360N 12v 40W AUDIO AMPLIFIER CIRCUIT DIAGRAM BTL audio 50W
Contextual Info: Ordering number : ENN3227E Monolithic Linear IC For Radio Cassette Recorders LA4630N 9V/12V 3-Dimension Power Amplifier Features • Stereo section 9V/3Ω 3Wx2, 12V/3Ω 5W×2 : NF-capacitorless power • Super bass section 9V/3Ω 6W, 12V/3Ω 10W : output capacitor, B-S capacitorless power

TS16949

Abstract: ZXTN25012EZ ZXTP25012EZ ZXTP25012EZTA
Contextual Info: ZXTP25012EZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -12V hFE > 500 IC cont = 4.5A VCE(sat) < -70mV @ 1A RCE(sat) = 45m⍀ PD = 2.4W Complementary part number ZXTN25012EZ Description C Packaged in the SOT89 outline this new low saturation 12V PNP

Contextual Info: 2SC5585 / 2SC5663 Datasheet NPN 500mA 12V Low Frequency Amplifier Transistors lOutline Parameter Value VCEO IC 12V 500mA VMT3 EMT3 Collector Collector Base Base Emitter Emitter 2SC5663 SC-105AA lFeatures 1) A Collector current is large.General Purpose. 2) Collector saturation voltage is low.