12V IGBT Search Results

power window motor 12v

Abstract: wiper motor 12v dc PWM generator for IGBT 12v dc driver motor control mosfet ELECTRONIC BALLAST 12v window lift motor rain sensor "rain sensor" 12v dc motor igbt control motor power window hall sensor
Contextual Info: HIGH INTENSITY DISCHARGE H.I.D. LAMPS 100V Power MOSFET: STB50NE10 4 High voltage (breakdown at 500V) power transistor. Switch selection: IGBT: STGD3NB60SD Power MOSFET: STB9NB50 DC/DC Converter 12V 70V 12V B.C.C. 450 Hz / 50% duty cicle Transformer + Clamping

2 anode igbt inverter circuit diagram

Abstract: IGBT control circuit for inverter power inverter circuit diagram circuit diagram of refrigerator pc929 pwm mosfet dc ac inverter ac dC converter circuit diagram 12v inverter circuit inverter circuit diagram 12V DC converter circuit diagram
Contextual Info: Application Note Photocoupler Motor Drive Circuit PC923X/PC924X DC + VCC O1 interface Anode + VCC1=12V + VCC2=12V O2 Cathode TTL, MCU GND U V W MOS-FET or IGBT LOAD Recommended Mode Bipolar Transistor PC942 MOS-FET / IGBT DC(-) PC923X or PC924X or PC928 or PC929

TS16949

Abstract: ZXTN25012EFH ZXTP25012EFH ZXTP25012EFHTA
Contextual Info: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = 4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to

ZXTN25012EFH

Abstract: ZXTP25012EFH TS16949 ZXTP25012EFHTA
Contextual Info: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = -4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to

marking 8A sot223

Abstract: sot223 transistor pinout transistor pnp 12V 1A Continuous Current Peak FZT717 FZT717TA 12v pnp transistor zetex 320
Contextual Info: FZT717 SOT223 PNP medium power transistor Summary BVCEO = -12V; IC = 3A Description Packaged in the SOT223 outline this low saturation 12V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.

Contextual Info: A Product Line of Diodes Incorporated FMMT717 12V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • • BVCEO > -12V IC = -2.5A Continuous Collector Current ICM = -10A Peak Pulse Current

FMMT717

Abstract: FMMT717TA
Contextual Info: A Product Line of Diodes Incorporated FMMT717 12V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • • BVCEO > -12V IC = -2.5A Continuous Collector Current ICM = -10A Peak Pulse Current

ZXTN25012EFL

Abstract: TS16949 ZXTN25012EFLTA
Contextual Info: ZXTN25012EFL 12V, SOT23, NPN low power transistor Summary BVCEO > 12V BVECO > 4.5V hFE > 500 IC cont = 2A VCE(sat) < 65 mV @ 1A RCE(sat) = 46 m⍀ PD = 350mW Description C Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse

GT25G102

Contextual Info: GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G102 Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE sat = 8V (Max.) (IC = 150A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

igbt flash

Abstract: GT20G102
Contextual Info: GT20G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20G102 Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE sat = 8.0V (Max.) (IC = 130A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

GT25G102

Contextual Info: GT25G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G102(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage:VCE (sat) = 8V (Max.) (IC = 150A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

high frequency welder circuit diagram

Abstract: pwm welder igbt welder APT9601 IC A 103 GF Transistor MJ 8004 APT9904 APTLGF280U120T an 503 hall sensor IGBT full bridge 1200
Contextual Info: APTLGF280U120T Zero Voltage switching Single switch NPT IGBT Power Module +15V POWER SUPPLY UNDERVOLTAGE LOCKOUT _ Q SIGNAL C2 E1 E2 HIGH FREQUENCY PROCESSING INH 0V GND C1 -15V ISOLATED AUXILIARY +12V DRIVER TRANSFORMER CIRCUIT E0 HIGH FREQUENCY FORCED START UP

GT20G102

Contextual Info: GT20G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G102(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

GT25G101

Contextual Info: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

high frequency welder circuit diagram

Abstract: APT9601 pwm welder diode t25 4 d9 driver igbt 1200v 300A for induction igbt welder High Frequency Induction Heating IC A 103 GF isolated voltage sensor 1mhz Transistor MJ 8004
Contextual Info: APTLGF210U120T Zero Voltage switching Single switch NPT IGBT Power Module +15V POWER SUPPLY UNDERVOLTAGE LOCKOUT _ Q SIGNAL C2 E1 E2 HIGH FREQUENCY PROCESSING INH 0V GND C1 -15V ISOLATED AUXILIARY +12V DRIVER TRANSFORMER CIRCUIT E0 HIGH FREQUENCY FORCED START UP

high frequency welder circuit diagram

Abstract: high frequency induction welder diode t25 4 d9
Contextual Info: APTLGF300U120T Zero Voltage switching Single switch NPT IGBT Power Module +15V POWER SUPPLY UNDERVOLTAGE LOCKOUT _ Q SIGNAL E1 E2 HIGH PROCESSING INH 0V GND C2 -15V ISOLATED AUXILIARY +12V C1 FREQUENCY DRIVER TRANSFORMER CIRCUIT E0 HIGH FREQUENCY FORCED START UP

Contextual Info: IGD1205W Hybrid Integrated Isolated N-Channel IGBT Driver Electrical Specifications Key Features: Absolute Maximum Ratings, TA = 25 ºC, VD = 12V or 15V, RG = 5⍀, unless otherwise noted. • Internal DC/DC Converter • Internal OptoCoupler • 30 kV/µS CMR

gt25g101

Contextual Info: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: IGD1208W Hybrid Integrated Isolated N-Channel IGBT Driver Electrical Specifications Key Features: Absolute Maximum Ratings, TA = 25 ºC, VD = 12V or 15V, RG = 5⍀, unless otherwise noted. • Internal DC/DC Converter • Internal OptoCoupler • 30 kV/µS CMR

Contextual Info: IGD1205W Hybrid Integrated Isolated N-Channel IGBT Driver Electrical Specifications Key Features: Absolute Maximum Ratings, TA = 25 ºC, VD = 12V or 15V, RG = 5⍀, unless otherwise noted. • Internal DC/DC Converter • Internal OptoCoupler • 30 kV/µS CMR

GT25G102

Contextual Info: GT25G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G102(SM) Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage:VCE (sat) = 8V (Max.) (IC = 150A) l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: GT20G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20G102 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE sat = 8.0V (Max.) (IC = 130A) l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

GT25G102

Contextual Info: GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G102 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance : VCE sat = 8V (Max.) (IC = 150A) l Low Saturation Voltage l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)