12T1B Search Results
12T1B Price and Stock
Samtec Inc SS-112-T-1BSOCKET STRIPS |
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Samtec Inc SD-112-T-1B.100" DOUBLE ROW SCREW MACHINE S |
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Samtec Inc HSS-112-T-1B.100" HIGH-TEMP SINGLE ROW SCREW |
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Samtec Inc SD-112-T-1B (SD SERIES)Socket, 2.54Mm, Vertical Through Hole, 24 Position; Connector Systems:Board-To-Board; Pitch Spacing:2.54Mm; No. Of Rows:2Rows; No. Of Contacts:24Contacts; Connector Mounting:Through Hole Mount; Product Range:Sd Series Rohs Compliant: Yes |Samtec SD-112-T-1B |
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Samtec Inc HSS-112-T-1B (HSS SERIES)Socket, 2.54Mm, Vertical Through Hole, 12 Position; Connector Systems:Board-To-Board; Pitch Spacing:2.54Mm; No. Of Rows:1Rows; No. Of Contacts:12Contacts; Connector Mounting:Through Hole Mount; Product Range:Hss Series Rohs Compliant: Yes |Samtec HSS-112-T-1B |
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12T1B Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SILICON EPITAXIAL PLANAR TYPE HN1D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Unit in mm HN1D02FU is composed of2 unit of cathode common. Low Forward Voltage : Vp 3 = 0.90V (Typ.) Fast Reverse Recovery Time : trr = 1.6ns (Typ.) Small Total Capacitance |
OCR Scan |
HN1D02FU HN1D02FU HN1D02FU- | |
Contextual Info: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit: mm z HN1D02FU is composed of 2 unit of cathode common. z Low forward voltage : VF 3 = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) |
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HN1D02FU HN1D02FU | |
HN1D02FUContextual Info: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit in mm z HN1D02FU is composed of 2 unit of cathode common. z Low forward voltage : VF 3 = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) |
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HN1D02FU HN1D02FU | |
Contextual Info: S IL IC O N E P IT A X IA L P L A N A R T Y P E HN1D01FU ULTRA HIGH SPEED SW ITCHING APPLICATIO N. Unit in mm • Small Package • Low Forward Voltage • F ast Reverse Recovery Time : • Small Total Capacitance : Vp 3 = 0.92 V (Typ.) 1^ = 1.6ns (Typ.) |
OCR Scan |
HN1D01FU | |
Contextual Info: HN1D02FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • HN1D02FU is composed of 2 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Unit in mm unit of cathode common. |
OCR Scan |
HN1D02FU D02FU HN1D02FU 961001EAA2' | |
HN1D01FUContextual Info: HN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Application Unit in mm z Small package z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.) |
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HN1D01FU HN1D01FU | |
diode n1d
Abstract: HN1D01FU
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OCR Scan |
HN1D01FU 961001EAA2' diode n1d HN1D01FU | |
Contextual Info: TOSHIBA HN1D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE h n i n m m m 'm m mmr n 7 F 11 ULTRA HIGH SPEED SWITCHING APPLICATION. • HN1D02FU is composed of 2 un it of cathode common. • Low Forward Voltage • Fast Reverse Recovery Time : t r r = 1.6ns Typ. |
OCR Scan |
HN1D02FU HN1D02FU | |
HN1D02FUContextual Info: TOSHIBA HN1D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • HN1D02FU is composed of 2 unit of cathode common. • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ. • Small Total Capacitance |
OCR Scan |
HN1D02FU N1D02FU HN1D02FU 961001EAA2' | |
Contextual Info: HN1D02FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • HN1D02FU is composed of 2 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Unit in mm unit of cathode common. |
OCR Scan |
HN1D02FU D02FU HN1D02FU 961001EAA2' | |
Contextual Info: TOSHIBA HN1D01FU TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 1 FU ULTRA HIGH SPEED SW ITCHING APPLICATIO N. • • • • Unit in mm Small Package Low Forward Voltage : Vjr 3 = 0.92V (Typ.) Fast Reverse Recovery Time : trr = 1.6ns (Typ.) Small Total Capacitance |
OCR Scan |
HN1D01FU | |
Contextual Info: HN1D01FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 1 FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Unit in mm Small Package Low Forward Voltage : Vjr 3 = 0.92V (Typ.) Fast Reverse RecoveryTime : trr = 1.6ns (Typ.) Small Total Capacitance |
OCR Scan |
HN1D01FU 961001EAA2' | |
e50e
Abstract: HN1D01FU MARKING TE US6
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OCR Scan |
HN1D01FU N1D01 961001EAA2' e50e HN1D01FU MARKING TE US6 | |
Contextual Info: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF 3 = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance |
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HN1D02FU HN1D02FU | |
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Contextual Info: HN1D03FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE h n i n n 3 F 11 m m m 'm m m mr v • ULTRA HIGH SPEED SWITCHING APPLICATION. U n it in mm • B u ilt in Anode Common and Cathode Common. TT. *j H unit x 2 .i± a i 1.25±0.1 • Low Forw ard Voltage |
OCR Scan |
HN1D03FU | |
sm2006
Abstract: lu2b
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OCR Scan |
HN1D01FU 961001EA sm2006 lu2b | |
HN1D02FUContextual Info: TOSHIBA HN1D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low Forward Voltage : Vjr 3 = 0.90V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.) |
OCR Scan |
HN1D02FU N1D02FU HN1D02FU 961001EAA2' | |
HN1D01FUContextual Info: HN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Application Unit in mm l Small package l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 2.2pF (typ.) |
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HN1D01FU HN1D01FU | |
HN1D02FUContextual Info: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit in mm z HN1D02FU is composed of 2 unit of cathode common. z Low forward voltage : VF 3 = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) |
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HN1D02FU HN1D02FU | |
HN1D02FUContextual Info: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit in mm l HN1D02FU is composed of 2 unit of cathode common. l Low forward voltage : VF 3 = 0.90V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) |
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HN1D02FU HN1D02FU |