12N65A
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AK Semiconductor
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12A 650V N-channel enhancement mode MOSFET with typical on-resistance of 0.7 ohms at VGS = 10V, available in TO-220F and TO-220C packages, featuring high dv/dt capability and 100% avalanche tested performance. |
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SLI_B12N65SV
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Maplesemi
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650V N-Channel MOSFET with 12A continuous drain current, 0.64 ohm typical RDS(on) at 10V VGS, low gate charge of 45nC, and high avalanche energy rating, suitable for high-efficiency power conversion applications. |
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CJPF12N65
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JCET Group
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N-Channel Power MOSFET CJPF12N65 with 650V drain-source voltage, 12A continuous drain current, 0.7 ohm typical on-resistance at 10V gate-source voltage, designed for high voltage switching applications. |
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WFD12N65S
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Winsemi Microelectronics
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650V Super-Junction Power MOSFET with 11A continuous drain current, 0.36Ω typical RDS(ON) at VGS=10V, low gate charge, fast switching, and suitable for power factor correction and switch mode power supplies. |
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F12N65
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Shandong Jingdao Microelectronics Co Ltd
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12A, 650V N-channel power MOSFET in ITO-220ABW package with RDS(ON) ≤ 0.85 Ω at VGS = 10V, designed for high-speed switching applications in power supplies and adaptors. |
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MDD12N65F
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Microdiode Semiconductor
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N-Channel MOSFET, 650V, 12A, RDS(on) 0.8Ω, Qg 41.9nC, TO-220F-3L, TO-220-3L, fast switching, low gate charge, high ruggedness. |
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JMPC12N65BJ
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Jiangsu JieJie Microelectronics Co Ltd
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650V, 12A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 0.74 ohm at VGS = 10V, designed for fast switching applications in power management and load switching. |
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SLF12N65S
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Maplesemi
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12A, 650V N-Channel MOSFET with typ. RDS(on) of 0.62 ohm at VGS = 10V, low gate charge of 35nC, high ruggedness, fast switching, 100% avalanche tested, suitable for high efficiency SMPS and PFC applications. |
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SLP_F12N65S
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Maplesemi
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650V N-Channel MOSFET with 12A continuous drain current, 0.62 ohm typical RDS(on) at 10V VGS, low gate charge of 35nC, and high avalanche energy rating, suitable for high-efficiency power conversion applications. |
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SLF_P12N65C
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Maplesemi
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650V N-Channel MOSFET with 12A continuous drain current, 0.75 ohm typical RDS(on) at VGS = 10V, low gate charge of 52nC, and high avalanche energy rating, suitable for high-efficiency power conversion applications. |
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SLP_F12N65SV
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Maplesemi
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650V N-Channel MOSFET with 12A continuous drain current, 0.64 ohm typical RDS(on) at VGS = 10V, low gate charge of 45nC, and avalanche energy rating of 550mJ, suitable for high-efficiency power conversion applications. |
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SK12N65B-TF
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Shikues Semiconductor
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650V N-ch Planar MOSFET, RoHS Compliant, RDS(ON),typ.=0.60 Ω@VGS=10V, Low Gate Charge, Fast Recovery Body Diode, Adaptor, Charger, SMPS Standby Power. |
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JMPF12N65BJ
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Jiangsu JieJie Microelectronics Co Ltd
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650V, 12A N-channel Enhancement Mode Power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.74 ohm at VGS = 10V, designed for fast switching, load switch, PWM, and power management applications. |
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12N65A
