12N65; Search Results
12N65; Datasheets (13)
Select Manufacturer
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
12N65A
|
AK Semiconductor | 12A 650V N-channel enhancement mode MOSFET with typical on-resistance of 0.7 ohms at VGS = 10V, available in TO-220F and TO-220C packages, featuring high dv/dt capability and 100% avalanche tested performance. | Original | ||||
JMPC12N65BJ
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Jiangsu JieJie Microelectronics Co Ltd | 650V, 12A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 0.74 ohm at VGS = 10V, designed for fast switching applications in power management and load switching. | Original | ||||
CJPF12N65
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JCET Group | N-Channel Power MOSFET CJPF12N65 with 650V drain-source voltage, 12A continuous drain current, 0.7 ohm typical on-resistance at 10V gate-source voltage, designed for high voltage switching applications. | Original | ||||
SLI_B12N65SV
|
Maplesemi | 650V N-Channel MOSFET with 12A continuous drain current, 0.64 ohm typical RDS(on) at 10V VGS, low gate charge of 45nC, and high avalanche energy rating, suitable for high-efficiency power conversion applications. | Original | ||||
WFD12N65S
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Winsemi Microelectronics | 650V Super-Junction Power MOSFET with 11A continuous drain current, 0.36Ω typical RDS(ON) at VGS=10V, low gate charge, fast switching, and suitable for power factor correction and switch mode power supplies. | Original | ||||
F12N65
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Shandong Jingdao Microelectronics Co Ltd | 12A, 650V N-channel power MOSFET in ITO-220ABW package with RDS(ON) ≤ 0.85 Ω at VGS = 10V, designed for high-speed switching applications in power supplies and adaptors. | Original | ||||
MDD12N65F
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Microdiode Semiconductor (MDD) | Power Field-Effect Transistor | Original | ||||
SLF12N65S
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Maplesemi | 12A, 650V N-Channel MOSFET with typ. RDS(on) of 0.62 ohm at VGS = 10V, low gate charge of 35nC, high ruggedness, fast switching, 100% avalanche tested, suitable for high efficiency SMPS and PFC applications. | Original | ||||
SLF_P12N65C
|
Maplesemi | 650V N-Channel MOSFET with 12A continuous drain current, 0.75 ohm typical RDS(on) at VGS = 10V, low gate charge of 52nC, and high avalanche energy rating, suitable for high-efficiency power conversion applications. | Original | ||||
SLP_F12N65S
|
Maplesemi | 650V N-Channel MOSFET with 12A continuous drain current, 0.62 ohm typical RDS(on) at 10V VGS, low gate charge of 35nC, and high avalanche energy rating, suitable for high-efficiency power conversion applications. | Original | ||||
SK12N65B-TF
|
Shikues Semiconductor | 650V N-ch Planar MOSFET, RoHS Compliant, RDS(ON),typ.=0.60 Ω@VGS=10V, Low Gate Charge, Fast Recovery Body Diode, Adaptor, Charger, SMPS Standby Power. | Original | ||||
SLP_F12N65SV
|
Maplesemi | 650V N-Channel MOSFET with 12A continuous drain current, 0.64 ohm typical RDS(on) at VGS = 10V, low gate charge of 45nC, and avalanche energy rating of 550mJ, suitable for high-efficiency power conversion applications. | Original | ||||
JMPF12N65BJ
|
Jiangsu JieJie Microelectronics Co Ltd | 650V, 12A N-channel Enhancement Mode Power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.74 ohm at VGS = 10V, designed for fast switching, load switch, PWM, and power management applications. | Original |
12N65; Price and Stock
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Goodwork Semiconductor Co Ltd 12N65F650V12A804m@10VITO-220F |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
12N65F | Tube | 30,000 | 50 |
|
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Rochester Electronics LLC 74HCT112N,652IC FF JK-TYPE 2-ELE 1-BIT 16-DIP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
74HCT112N,652 | Tube | 7,656 | 186 |
|
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Nextgen Components TO220FMD12N65FMOSFET TO-220F N 650V 12A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TO220FMD12N65F | Tube | 6,750 | 1,000 |
|
Buy Now | |||||
Vishay Intertechnologies SIHB12N65E-GE3MOSFET N-CH 650V 12A D2PAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHB12N65E-GE3 | Tube | 2,716 | 1 |
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SIHB12N65E-GE3 | Tape & Reel | 28 Weeks | 1,000 |
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SIHB12N65E-GE3 | 2,781 |
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SIHB12N65E-GE3 | Bulk | 1 |
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SIHB12N65E-GE3 | Tube | 1,000 |
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SIHB12N65E-GE3 | 1 |
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Get Quote | |||||||
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SIHB12N65E-GE3 | 39 Weeks | 50 |
|
Get Quote | ||||||
Rochester Electronics LLC 74HC112N,652IC FF JK-TYPE 2-ELE 1-BIT 16-DIP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
74HC112N,652 | Tube | 2,253 | 186 |
|
Buy Now | |||||