12N4500 Search Results

Contextual Info: VCE IC = = 4500 V 55 A IGBT-Die 5SMY 12N4500 Die size: 14.3 x 14.3 mm Doc. No. 5SYA 1646-00 Jan 08 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Poymide

Contextual Info: VRRM = IF = 4500 V 110 A Fast-Diode Die 5SLY 12N4500 Die size: 14.3 x 14.3 mm Doc. No. 5SYA 1674-00 Jan 08 • • • • Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS and Silicon Nitride Maximum rated values 1 Parameter Symbol

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Abstract: diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12
Contextual Info: IGBT and Diode dies ABB Semiconductors ABB IGBT and Diode dies from stateof-the-art SPT planar technology platform. Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs ABB Semiconductor has a well established reputation in the